2SD1270 Search Results

2SB0945

Abstract: 2SB945 2SD1270
Contextual Info: Power Transistors 2SB0945 2SB945 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1270 Unit: mm ● • 0.7±0.1 Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –130 V Collector to emitter voltage

Contextual Info: Power J ransistors 2SD1270 2SD1270 Silicon NPN Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SB945 • Features • L ow c o lle c to r-e m itte r s a tu ra tio n v o lta g e • G ood lin e a rity of DC c u r r e n t gain

2SB945

Abstract: 2SD1270
Contextual Info: JMnic Product Specification 2SB945 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・Large collector current IC ・Low collector saturation voltage ・Complement to type 2SD1270 APPLICATIONS ・For power switching applications PINNING PIN

2SB945

Abstract: 2SD1270
Contextual Info: Power Transistors 2SB945 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1270 Unit: mm ● 0.7±0.1 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –130 V Collector to emitter voltage

2SB0945

Abstract: 2SD1270
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1270 Silicon NPN epitaxial planar type For power switching Complementary to 2SB0945 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Parameter Collector-emitter voltage (Base open)

2SB0945

Abstract: 2SB945 2SD1270
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0945 (2SB945) Silicon PNP epitaxial planar type For power switching Complementary to 2SD1270 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Parameter Collector-emitter voltage (Base open)

2SB0945

Abstract: 2SB945 2SD1270
Contextual Info: Power Transistors 2SB0945 2SB945 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1270 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −130 V Collector-emitter voltage (Base open) VCEO −80 V Emitter-base voltage (Collector open)

2SB0945

Abstract: 2SD1270
Contextual Info: Power Transistors 2SD1270 Silicon NPN epitaxial planar type For power switching Complementary to 2SB0945 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO 130 V Collector-emitter voltage (Base open)

2SB0945

Abstract: 2SD1270
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1270 Silicon NPN epitaxial planar type For power switching Complementary to 2SB0945 5.5±0.2 4.2±0.2 2.7±0.2 φ 3.1±0.1 • Absolute Maximum Ratings TC = 25°C Symbol Rating

2SD1270

Abstract: 2SB945
Contextual Info: SavantIC Semiconductor Product Specification 2SD1270 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·Low collector saturation voltage ·Large collector current IC ·Complement to type 2SB945 APPLICATIONS ·For power switching applications

2SC1815

Abstract: 2SC5400 2sc5290 2sc458 nec 2SC923 2SC1675 2SC945 2SC3421 2SC520A 2SC519A
Contextual Info: - 90 - a s s T y p e No. M « Manuf. SANYO 3E TOSHIBA m b NEC B HITACHI ÍL * ± FUJITSU ffl fó T MATSUSHITA * 2SC 5 1 5A M 2 2SC2242 * 2S0 516 M $ 2SC3421 2SC2497 * * * 2SC 516A * 2: 2SC3421 2 SC2497A M ~S. 2SC2075 2SC 518 % 2 2SD718 2SD1270 * 2SC 518A %

h 669A

Abstract: 2SD1270 C-123 2SB945 2SD1271
Contextual Info: 2SD1270 Power Transistors 2SD1270 Silicon NPN Epitaxial Planar Type Package Dim ensions Pow er Switching C om plem entary Pair with 2 S B 94 5 • Features • • • • 2.9max Low collector-em itter saturation voltage V ce <sao Good linearity of DC current gain (I i f e )

2SB945

Abstract: 2SD1270
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB945 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.5V(Max)@IC= -4A ·Good Linearity of hFE ·Large Collector Current IC ·Complement to Type 2SD1270 APPLICATIONS

2SB945

Abstract: 2SD1270
Contextual Info: 2SD1270 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT SC-67 ! Complement to 2SB945 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC)

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SD811 TOSHIBA

Abstract: 2SC510 2SD2061 2SD877 RY 228 2SD2023 2SD1270 2SD880 2SC2120 2SD867
Contextual Info: * * * * * * i * * * * * * * * * * * * * * * M anuf. a m. X 3E •y-y'ry y-y'ry ■v-yry ■y-yry ■y-yírv yyry € h SANYO 2SD313 2SD313 n jft ^ TOSHIBA 2SC2120 2SD880 2SD880 2SC510 2SC510 2SC510 2SD877 2SD877 2SD877 NEC 2SD795 2SD795 M AL HITACHI 2SC1213

2SC2038

Abstract: 4835 4816 2SD1415 4808 4828 4833 2SC4328 2SC4516 2sc4834
Contextual Info: - 200 - a tt « 2SC 4810 2 SC 4811 2SC 4815 2SC 4816 2SC 4817 2 SC 4818 2SC 4835 2SC 4836 2SC 4837 2SC 4839 2SC 4840 2SC 4841 2SC 2SC 2SC 2SC 2SC 2SC 4842 4843 4844 4845 4846 4847 2SC 4848 2SC 4849 2SC 4850 2SC 2SC 2SC 2SC 2SC 4851 4852 4853 4854 4855 H ft

2SC1006

Abstract: 2SC1885 2SC3359 2SC710 2sd1944 2SC1957 2sc1815 2SC2320 2SC763 2SC2550
Contextual Info: - m - a S £ T y p e No. « Manuf. * = S A NYO 3E ^ T O SHIBA * 2SC 1973 fé T 2SC2314 * 2SC 1974 ✓ T T T T T ZSC2078 2SC2075 2SC2078 2SC1678 2SC 1980 fé *2 fé fé fé 2SC 1981 V - — ?sn9R5n * 2SC 1975 ^ * 2SC 1976 * 2SC 1977 * * * m. NEC tL HITACHI

2sD1915

Abstract: 2912 nec NEC 2905 2sc3358 nec 2910 2SC2694 2SC3240 2SC2960 2SC3069 2SC343
Contextual Info: - m % Type No. 2SC 287 1 L 2SC 2871S 2SC 2872 ^ 2SC 2873 2SC 2875 2SC 2876 2SC 2877 _ 2SC 2878 2SC 2879 2SC 2880 ^ 2SC 2881 2SC 2882 ^ 2SC 2883 2SC 2884 2SC 2885 ^ 2SC 2891 2SC 2900 - r ' 2SC 2901 ^ 2SC 2905 2SC 2905A 2SC 2907 ' 2 SC 2908 2SC 2909 — 2SC 2910 f

TRANSISTOR DATASHEET D1555

Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Contextual Info: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440

sc 3228

Abstract: C3468 2SD2159 2SC 3205 2SD880 2SC3296 2sc3192 2SC2320 c2981 2SD1812
Contextual Info: - 15 6 - §ä « T y p e No. a « Manuf. 2SC 3186 •tf-VÍTV 2SC 3187 ✓ tö T 2SC 3189 = 2SC 3190 *' »H m ? nam ? »am ? ita -?«a«? »a«? ttS « T 2SC 3191 2SC 3192 * ' 2SC 3193 / 2SC 3194 2SC 3195 ¿ 2 SC 3196 h n T O S HIBA «am i »am ? 2SC 3199 X

ON3105

Abstract: 2sd2603 mn4117405 2sc901b mn6520 MN1280 mn1225 MN6147C 2SC5573 GN2013
Contextual Info: Discontinued Types • Discontinued Types ● MOS LSIs Part No. Alternative Part No. MN1001 MN1020215 MN1020407 MN1020415 MN1020715 MN102LF53G MN1040 MN110 MN1101 MN115 MN115P MN116 MN116P MN1250 MN1250B MN1250BJC MN12510 MN1252 MN1252A MN1252B MN1252B1 MN1252B1S

2sb504

Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V
Contextual Info: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ *; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1* n 3 St

STk442-130

Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components