2SD166 Search Results

D1669

Abstract: 2SB1136 2SD16 AOOS
Contextual Info: O rd e rin g n u m b e r: EN2092B 2SB1136/2SD1669 No.2092B PNP/NPN Epitaxial Planar Silicon Transistors 50V/12A Swtching Applications A pplications • Relay drivers, high-speed inverters, converters, and other general high-current switching applications.

2SD1665

Abstract: 2FK transistor T2721 2SB1130AM 2SD1665AM 2FK 638 transistor
Contextual Info: 40E » ROHM CO LTD 7826^ □QQS'IBt. 3 H R H N / T ransistors 2SD1665AM — 2 S D 1 6 6 5 A M — — T -2 7 -Z I Pow er Amp. Epitaxial Planar NPN Silicon Transistor • ^ JfiTf^ H /D innensions Unit : mm • « * . 1 ) i t « E T ' & 3 (B V Ce o = 1 6 0 V ) o

2SD1667

Abstract: 2SB1134
Contextual Info: Inchange Semiconductor Product Specification 2SD1667 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SB1134 ・Low collector saturation voltage APPLICATIONS ・Relay drivers,high-speed inverters,and other general high-current switching applications

smd transistor marking br

Abstract: smd transistor marking da smd marking DA transistor SMD DA MARKING SMD TRANSISTOR P SMD BR 32 DA SMD transistor smd marking smd transistor marking 1 da transistor 2SD1664
Contextual Info: Transistors SMD Type Medium Power Transistor 2SD1664 Features Low VCE sat Compliments to 2SB1132 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 32 V Emitter-Base Voltage VEBO 5

Contextual Info: SMD Type Product specification 2SB1132 Features Low VCE sat Compliments to 2SD1664 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -32 V Emitter-Base Voltage VEBO -5 V -1 A Collector Current

2SB1134

Contextual Info: Ordering number:2091B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1134/2SD1667 50V/5A Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, and other general high-current switching applications. unit:mm 2041A [2SB1134/2SD1667]

2SB1135

Abstract: 2SD1668
Contextual Info: SavantIC Semiconductor Product Specification 2SB1135 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SD1668 ·Low collector saturation voltage ·Wide ASO APPLICATIONS ·Relay drivers ·High speed inverters;converters

2SB1133

Abstract: 2SD1666
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1133 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD1666 APPLICATIONS

2SB1135

Abstract: 2SD1668
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1135 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -50V(Min) ·Low Collector Saturation Voltage: VCE(sat)= -0.4V(Max.)@ IC= -4A ·Complement to Type 2SD1668

2SD1664

Abstract: 4250 transistor
Contextual Info: 2SD1664 NPN Silicon General Purpose Transistor Elektronische Bauelemente R o H S C o m p lia n t P ro d u c t D D1 Features A E E1 SOT-89 b1 1 2 b 3 C e L Power dissipation o PCM : 0.5 W Tamb= 25 C e1 1.BASE Collector current 2.COLLECTOR ICM : 1 A 3.EMITTER

nec 2sc3157

Abstract: 2SD999 2SD1296 2SD1317 2SD1406 2sc3694 2SC3760 2SD2061 2sd2239 nec 1678
Contextual Info: - 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SO 2SD 2SD 1669 y 1673 1676 — ' 1677 1678 1680 1682 ^ 1683 " 1684 •* 1685 1686 □ — A = * = = n n M. 2 TOSHIBA B m NEC ±L HITACHI 2SD1622 2SC2883 2SD1406 2SC3299 2SD1412 2SD1435K 2SD136S 2SD1662 fó T -E m 2SC3419

te 1819

Abstract: 2SD1878 2SC4211 2SD1649 2sd1856 1815 2SC4723 2sd1707 2SD1929 2SC4331
Contextual Info: - a ¡g tt £ Manuf. Type So. H £ SANVO 2SD1667 IE TOSHIBA Q m jtec 2SD1406 ÍL HITACHI Ü ± il FUJITSU T MATSUSHITA 2SD2107 2SD1267 2SD2105 2SD1445A o MITSUBISHI 251 A ROHM 2SÜ1778 2SD 1813 ¡L 2SD 1814 S AI 2SD 1815 J = ft 2SD 1816 / = n 2SD 1817 X =

SC-62

Abstract: 2SD1662 2SD1663 2SD1664 2SD1665AM 2SD1665M 2SD1666 2SD1667 2SD1668 2SD1669
Contextual Info: - 260 - Ta=25<C , *EPfàTc=25‘ C m 2SD1662 2SD1663 2SD1664 2SD1665AM 2SD1665M 2SD1666 2SD1667 s tt j s s fô T O—A n —A D —A 3$ rn « Œ VCBO «CEO (V) (V) PSW 100 PSW 1500 100 Pc Pc* (A) (W) (W) »CBO unax; UA) 100 15 5 n m « ÌC(DC) , V'CB (V)

Contextual Info: / T ransistors 2SD1665M/2SD1857 h -7 > V *$ 2SD1665M I t N P NPower'>•;=!> Amp. 2SD1857 Epitaxial Planar NPN Silicon Transistors sir >J V; V d i-r • W K \ l i ± [ 3 / Dinlens' ons U n it: mm 1) is] H E 7 &-5 (BVceo = 120V)o 2) f T i^ i *\ , Cob^F 'f&t'vo

2SD1858

Abstract: 2SB1132 2SB1237 2SD1664 T100 rohm 2sd1664
Contextual Info: Medium Power Transistor 32V, 1A 2SD1664 / 2SD1858 Dimensions (Unit : mm) 2SD1664 0.4 + − 0.1 1.5 + − 0.1 (2) (3) 0.5 + − 0.1 3.0 + − 0.2 0.4+0.1 −0.05 0.65Max. 0.4 + − 0.1 1.5 + − 0.1 0.5 + − 0.1 (1) (2) (3) 2.54 2.54 Abbreviated symbol: DA∗

p64 transistor

Abstract: 2SD1664PT 2SD1664P
Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2SD1664PT SURFACE MOUNT NPN Switching Transistor VOLTAGE 32 Volts CURRENT 1 Ampere APPLICATION * Telephone and proferssional communction equipment. * Other switching applications. FEATURE SC-62/SOT-89 * Suitable for high packing density.

2SB1134

Abstract: 2SD1667
Contextual Info: Ordering number:ENN2091B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1134/2SD1667 50V/5A Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, and other general high-current switching applications. unit:mm 2041A

transistor Ic 1A datasheet NPN

Abstract: 2SD1858 2SD1664 NPN Silicon Epitaxial Planar Transistor Transistor d12 Transistor 2SD1858 2SB1237 2sb123 NPN Transistor Characteristics Silicon NPN Epitaxial Planar Power Transistor
Contextual Info: Transistors Medium Power Transistor 32V, 1A 2SD1664 / 2SD1858 FFeatures 1) Low VCE(sat), VCE(sat) = 0.15V (typical). (IC / IB = 500mA / 50mA) 2) Complements the 2SB1132 / 2SB1237. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor

ic TO 30313

Contextual Info: Ordering number : ENN3031A 2SB1133 / 2SD1666 PNP / NPN Triple Diffused Planar Silicon Transistors 2SB1133 / 2SD1666 Low-Frequency General-Purpose Amplifier Applications Features • • • Package Dimensions Wide ASO Adoption of MBIT process . Micaless package facilitating easy mounting.

2SD1665

Abstract: 2SD1857A
Contextual Info: 2SD1665AM/2SD1857A h -p > v ^ £ /T ra n s is to rs 2SD1665AM 2SD1857A • X tf £ y 7 JU7° \s — NPN y>J = l> Epitaxial Planar NPN Silicon Transistors Power Amp. WA \f&[3l/Dimensions Unit : mm « 1) iHiiW15T&#39;<fc 5 o 2SD1665AM B V ceo=160V 2 ) f T* ' < ,

2SD1664

Contextual Info: Is ~7 > V 7 . $ /Transistors 2SD1664 2SD1664 • 1 ^ 7 NPN \> b ~ 7 > V * $ Epitaxial Planar NPN Silicon Transistor 4 lM :friSlIIffl/M e d iu m Power Amp. • Wfê'+SÉlII/DiiTiensions Unit : mm w * 1) P c = 2 W r * 5 (4 0 X 4 0 X 0 .7 m m -tr =j 2) Low

2041A

Contextual Info: Ordering number:2094B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1135/2SD1668 50V/7A Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters, and other general high-current switching applications. unit:mm

Contextual Info: 2SD1662 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD1662 High Current Switching Applications • Unit: mm High DC current gain: hFE = 1000 (min) (VCE = 3 V, IC = 15 A) • Low collector saturation voltage: VCE (sat) = 1.5 V (max) (IC = 15 A)

2SD1664

Contextual Info: 2SD1664 2SD1664 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 1 W (Tamb=25℃) 2 3. EMITTER Collector current ICM: 1 A Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range 3 TJ, Tstg: -55℃ to +150℃