2SD2137 Search Results

Contextual Info: Power Transistors 2SD2137, 2SD2137A Silicon NPN triple diffusion planar type Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage 2SD2137 Collector to emitter voltage 2SD2137 Symbol Rating Unit VCBO 60 V 2SD2137A 60 2SD2137A

2SD2137A

Abstract: 2SB1417 2SB1417A 2SD2137
Contextual Info: Power Transistors 2SD2137, 2SD2137A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1417 and 2SB1417A Unit: mm • Features ■ Absolute Maximum Ratings Parameter TC=25˚C Symbol Collector to 2SD2137 base voltage 2SD2137A

2sd2137

Contextual Info: Power Transistors 2SD2137, 2SD2137A Silicon NPN triple diffusion planar type Unit: mm Parameter Symbol Collector to base voltage 2SD2137 Collector to emitter voltage 2SD2137 VCBO 2SD2137A Unit 60 V 2.5±0.1 0.65±0.1 0.35±0.1 1.05±0.1 VEBO V Peak collector current

2SD2137

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD2137 TRANSISTOR NPN TO-220 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 2 W (Tamb=25℃) 3. EMITTER Collector current 3 A ICM: Collector-base voltage 60

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD2137 TO-220 TRANSISTOR NPN FEATURES z High forward current transfer ratio hFE which has satisfactory linearity z Low collector to emitter saturation voltage VCE(sat)

2SD2137

Contextual Info: Transys Electronics L I M I T E D TO-220 Plastic-Encapsulated Transistors 2SD2137 TRANSISTOR NPN TO-220 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 2 W (Tamb=25℃) 3. EMITTER Collector current 3 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range

Contextual Info: 2SD2137Q Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)3 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)1.2 @I(C) (A) (Test Condition)3

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD2137A TO – 220 TRANSISTOR NPN 1. BASE FEATURES z High DC Current Gain z Low Collector to Emitter Saturation Voltage VCE(sat) z Allowing Automatic Insertion with Radial Taping

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 2SD2137 TRANSISTOR（NPN） TO—220F FEATURES Power dissipation PCM : 2 W（Tamb=25℃） Collector current ICM : 3 A Collector-base voltage V BR CBO : 60 V Operating and storage junction temperature range

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2137A Silicon NPN triple diffusion planar type Unit: mm Rating Unit Collector-base voltage (Emitter open) VCBO 80 V Collector-emitter voltage (Base open) VCEO 80 V Emitter-base voltage (Collector open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2137A Silicon NPN triple diffusion planar type Unit: mm Rating Unit Collector-base voltage (Emitter open) VCBO 80 V Collector-emitter voltage (Base open) VCEO 80 V Emitter-base voltage (Collector open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1417A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137A • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open)

2SB1417A

Abstract: 2SD2137A
Contextual Info: Power Transistors 2SD2137A Silicon NPN triple diffusion planar type Unit: mm Symbol Rating Unit Collector-base voltage Emitter open VCBO 80 V Collector-emitter voltage (Base open) VCEO 80 V Emitter-base voltage (Collector open) VEBO 6 V Collector current

2SB1417A

Abstract: 2SD2137A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2137A Silicon NPN triple diffusion planar type Unit: mm 10.0±0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)

2SD2137

Abstract: 2SB1417 2SB1417A 2SD2137A
Contextual Info: Power Transistors 2SD2137, 2SD2137A Silicon NPN triple diffusion planar type Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage 2SD2137 Collector to emitter voltage 2SD2137 Symbol Rating Unit VCBO 60 V 2SD2137A 60 2SD2137A

2SB1417A

Abstract: 2SD2137A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2137A Silicon NPN triple diffusion planar type Unit: mm 10.0±0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)

2SB1417A

Abstract: 2SD2137A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1417A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137A 10.0±0.2 • Absolute Maximum Ratings Ta = 25°C Collector-base voltage (Emitter open)

2SD2137

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 2SD2137 TRANSISTOR NPN TO-220F 1. BASE FEATURES z High forward current transfer ratio hFE which satisfactory linearity z Low collector to emitter saturation voltage VCE(sat)

2SD2137

Abstract: pc 817 2SB1417 2SB1417A 2SD2137A
Contextual Info: 2SD2137, 2SD2137A Power Transistors 2SD2137, 2SD 2137A Silicon NPN Triple-Diffused Planar Type Power Amplifier C om plem entary Pair with 2SB1417, 2SB1417A • Features • H igh DC c u r re n t gain h H -F and good lin earity • L ow c o lle c to r-e m itte r s a tu ra tio n v o ltag e (VtEcsao)

2SD2137

Abstract: 2SD2137A 2SB1417 2SB1417A S21N
Contextual Info: Power Transistors 2SD2137, 2SD2137A 2SD2137, 2SD2137A Silicon NPN Triple-Diffused Planar Type Pow er A m plifier C om plem entary Pair with 2SB1417, 2S B1417A • Features • H igh D C c u r re n t gain h PF and good lin earity • L ow c o lle c to r-e m itte r s a tu ra tio n v o ltag e (VcF.tao)

Contextual Info: 2SD2137 NPN TO-220F Bipolar Transistors TO-220F 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features High forward current transfer ratio hFE which satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Allowing supply with the radial taping

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2137A Silicon NPN triple diffusion planar type Unit: mm Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 80 V Collector-emitter voltage (Base open) VCEO

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1417A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137A 10.0±0.2 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO

2SD2137

Abstract: 2SB1417 2SB1417A 2SD2137A
Contextual Info: Power Transistors 2SD2137, 2SD2137A Silicon NPN triple diffusion planar type Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage 2SD2137 Collector to emitter voltage 2SD2137 Symbol Rating Unit VCBO 60 V 2SD2137A 60 2SD2137A