2SD216 Search Results

2SD2167

Abstract: T100
Contextual Info: 2SD2167 Transistors Power Transistor 31±4V, 2A 2SD2167 zExternal dimensions (Unit : mm) zFeatures 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due to low loads.

Contextual Info: 2SD2166 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

2SD2165

Abstract: *d2165
Contextual Info: データ・シート シリコン・パワー・トランジスタ Silicon Power Transistor 2SD2165 NPNエピタキシアル形シリコン・トランジスタ 低周波電力増幅，低速度スイッチング用 2SD2165は，hFEが特に高くなるように設計されたシングルのパ

2sD2394

Abstract: D348 transistor TI2150 marking HRA 2SD2576
Contextual Info: 2SD2167 2SD2394 / 2SD2576 Transistors I Power Transistor 31 ± 4 V , 2A 1) 2) 3) 4) Built-in zene r diode betw een collector and base. Z ener diode has low voltage dispersion. Strong protection against reverse pow er surges due to low loads. P c * 2 W (On 4 0 X 4 0 X 0 -7 m m ceram ic board)

Contextual Info: h 7 > V ^ ^/Transistors 2SD2167 2SD2167 vu=i>h7>v* W Epitaxial Planar NPN Silicon Transistor ftHiSMzftiSliffl/l-ow Freq. Power Amp. • ft* • W fN 'jiia / 'D im e n sio n s U nit: mm 1) H U ? ? • 3 1 ± 4 V 0 }y x l — ? ! * - K S rtlK o 2) "J tlT -* & . < » r t v V W f t H U Z 'P

d204 transistor

Abstract: D204 2SD2166 2SB1412 2SB1436 2SD2097 2SD2098 2SD2118 transistors 96-229-D204
Contextual Info: Transistors Low VCE sat Transistor(Strobe flash) 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166 FFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC / IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326 /

2SD2576

Abstract: 2SD2394 D310 2SD2167 D348 transistor D348
Contextual Info: Transistors 2SD2167 2SD2394 / 2SD2576 92S-358–D310 (94L-1098-D348) 314

NEC RELAY

Contextual Info: DATA SHEET DARLINGTON POWER TRANSISTOR 2SD2163 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED HIGH-CURRENT SWITCHING The 2SD2163 is a mold power transistor developed for lowspeed high-current switching. This transistor is ideal for direct

Q451

Abstract: 143ES 144ESA 2SB1616 2SD2478 96-229-D 124ES 114ES 2sD 313 2SD 388 A
Contextual Info: Transistors LOW VcE sat Trsnsistoffstrobe flash) 2SD2098/2SD2118/2SD2097/2SD2166 •F e a tu re s 1) Low VcE(sat). V cE M = 0 .2 5 V (Typ.) (Ic / I b 2) •E x t e r n a l dim ensions (Units: mm) 2SD2098 18±0.1 r—-I = 4 A /0 .1 A ) r~fi Excellent D C current gain charac­

sc6202

Abstract: SC-6202 ZENER DIODE 2A MARKING DL 2SD2167 T100
Contextual Info: 2SD2167 Power Transistor 31±4V, 2A 2SD2167 •Features 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due

transistor C017

Abstract: D1560 transistor t 2190 2SD2164
Contextual Info: データ・シート シリコン・パワー・トランジスタ Silicon Power Transistor 2SD2164 NPN エピタキシアル形シリコン・トランジスタ 低周波電力増幅，低速度スイッチング用 2SD2164 は，hFE が特に高くなるように設計されたシングルの

2sd2166

Abstract: oc sc62
Contextual Info: T r a n s is to r s • 7 f l 2 f l 1 1 cì O G lbTG a b lT ■ LOW VcE sat TrànSÌStOr(Strobe flash) 2SD2098/2SD2118/2SD2097/2SD2166 #F eatures 1) •E x te rn a l dimensions (Units: mm) LOW VcE(sat). VcE(sat) (I c / I b = 0.25V (Typ.) 2SD2098 = 4A/0.1A)

2SD2161

Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SD2161 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2161 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and

2sd2152

Abstract: C4115S 2SC4115 C4115-S 2SD2154
Contextual Info: 2SC4115S/2SD2152/2SD2154/2SD2164 h 7 > y 7 £ /T ra n s is to rs 2 S C 4 1 1 5 2 S D 2 1 6 S / 2 S D 2 1 5 2 / 2 S D 2 1 5 4 / 4 Epitaxial Planar NPN Silicon Transistors • fô ft • ÿl-Jfi'ïf iiS l/D im e n s io n s Unit : mm 1) V c E ( s a t|* sß ^ ' o

2SD2167

Abstract: T100 2A 5v ZENER DIODE
Contextual Info: 2SD2167 Transistors Power Transistor 31±4V, 2A 2SD2167 !External dimensions (Units : mm) !Features 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due to low loads.

2SD2162

Abstract: TD-7622
Contextual Info: データ・シート シリコン・パワー・トランジスタ Silicon Power Transistor 2SD2162 NPN エピタキシアル形シリコン・トランジスタ（ダーリントン接続） 低周波電力増幅，低速度スイッチング用 工業用

Contextual Info: Transistors IC SMD Type Product specification 2SD2167 Features Built-in zener diode between collector and base. Zener diode has low voltage dispersion. Strong protection against reverse power surges due to low loads. PC=2 W on 40 40 0.7mm ceramic board .

2SD209B

Contextual Info: Transistors Low VcE sat Transist0r(strobe flash) 2SD2098/2SD2118/2SD2097/2SD2166 •F eatu re s 1) •E xte rn a l dimensions (Units: mm) L O W VcE(eat). VcE(sat) = 0.25V (Typ.) ( I c / I b = 4A/0.1 A) 2) Excellent DC current gain charac­ teristics. 3) Complements the

2SB1436

Abstract: tc255 2SD2166 f-30MHz
Contextual Info: SavantIC Semiconductor Product Specification 2SB1436 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SD2166 ·Low collector saturation voltage APPLICATIONS ·For audio power amplifier applications PINNING PIN DESCRIPTION

Contextual Info: 2SD2167 Transistors Power Transistor 31±4V, 2A 2SD2167 !External dimensions (Units : mm) !Features 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due to low loads.

transistor

Abstract: B204 2SB1412 2sb1386 2SD2098 hFE is transistor 2SD2166 2SB1436 2SB1326 data sheet transistor PNP
Contextual Info: Transistors Low Frequency Transistor *20V,*5A 2SB1386 / 2SB1412 / 2SB1326 / 2SB1436 FFeatures 1) Low VCE(sat). VCE(sat) = *0.35V (Typ.) (IC / IB = *4A / *0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166.

0.25V zener

Abstract: 2SD2167
Contextual Info: 2SD2167 N "7 > V 7s 2/Transistors 2SD216T Epitaxial Planar NPN Silicon Transistor fiffl/L o w Freq. Power Amp. ÿ j-Îi^ jiH /D im e n s io n s Unit : mm 1) • A i- x n m : : 3 1 ± 4 V W 'V 2) 7 i t - i Œ » / < 7 7 i« g i: ÿ l.fi±0.l & i'o = jr T i_

2SD2098

Abstract: D204 2SD2166 2SB1386 2SB1436 d204 transistor sit transistor 2SB1412 2SD2118 2SB1326
Contextual Info: Transistors Low VCE sat Transistor(Strobe flash) 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166 FFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC / IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326 /

2SD2165

Abstract: NEC marking b
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SD2165 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2165 is a single power transistor developed especially PACKAGE DRAWING UNIT: mm for high hFE. This transistor is ideal for simplifying drive circuits and