2SD217 Search Results

Contextual Info: Ordering num ber: EN 3196 2SD2176 No.3196 i SA\YO NPN Epitaxial Planar Silicon Transistor Motor Driver Applications F eatures • Darlington connection • On-chip zener diode of 60 ± 10V between collector and base • High inductive load handling capability

2SD2178

Contextual Info: Power Transistors 2SD2178 Silicon NPN epitaxial planar type Unit: mm For low-frequency output amplification • Low collector to emitter saturation voltage VCE sat • Large collector current IC 16.0±1.0 • Absolute Maximum Ratings Ta = 25°C Parameter

TRANSISTOR D405

Contextual Info: 2SD2170 2SC4574 Transistors Medium Power Transistor Motor or Relay drive I 2SD 2170 •A b s o lu te maximum ratings (Ta=25"C ) •F e a tu re s 1 2 3 4 5 6 ) ) ) ) ) ) Built-in zener diode between collector and base. Z ener diode has low dispersion. Strong protection against reverse pow er surges due to low loads.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2178 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 90˚ • Low collector-emitter saturation voltage VCE(sat) • Large collector current IC

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2177A Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: Medium Power Transistor Motor, Relay drive (90 +20 −10 , 2A) 2SD2170 zDimensions (Unit : mm) zFeatures 1) Built-in zener diode between collector and base. 2) Zener diode has low dispersion. 3) Strong protection against reverse power surges due to "L" loads.

2SB1446

Abstract: 2SD2179
Contextual Info: Transistor 2SD2179 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB1446 Unit: mm 1.05 2.5±0.1 ±0.05 • Features 0.65 max. 14.5±0.5 ● 1.0 1.0 ● 1.45 0.8 0.2 Low collector to emitter saturation voltage VCE(sat).

2SD2177A

Contextual Info: Transistor 2SD2177A Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm 1.05 2.5±0.1 ±0.05 • Features 4.0 0.8 1.0 1.0 ● 0.2 Low collector to emitter saturation voltage VCE sat . Allowing supply with the radial taping. ●

2SB1446

Abstract: 2SD2179
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1446 Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD2179 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) ue pl d in an c se ed lud pl vi an m m es

2SB1446

Abstract: 2SD2179
Contextual Info: Transistors 2SD2179 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB1446 Unit: mm 6.9±0.1 4.0 2.5±0.1 0.8 • Features • Low collector-emitter saturation voltage VCE(sat) • Allowing supply with the radial taping

2SB1446

Abstract: 2SD2179
Contextual Info: Transistors 2SB1446 Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD2179 Unit: mm 6.9±0.1 4.0 2.5±0.1 0.8 • Features • Low collector-emitter saturation voltage VCE(sat) • Allowing supply with the radial taping

2SB1446

Abstract: 2SD2179
Contextual Info: Transistor 2SB1446 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD2179 Unit: mm 1.05 2.5±0.1 ±0.05 0.15 6.9±0.1 0.7 4.0 0.8 0.2 Low collector to emitter saturation voltage VCE sat . Allowing supply with the radial taping.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2179 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB1446 Unit: mm 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1446 Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD2179 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)

2SD2177A

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2177A Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 2.5±0.1 (0.8) (1.0) (0.2) 4.5±0.1 0.7 Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b

2SB1434

Abstract: 2SD2177
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1434 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD2177 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) Th an W is k y Th e a pro ou Fo an po du fo

2SB1434

Abstract: 2SD2177
Contextual Info: Transistor 2SD2177 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB1434 Unit: mm 1.05 2.5±0.1 ±0.05 • Features 0.65 max. 14.5±0.5 ● Low collector to emitter saturation voltage VCE sat . Complementary pair with 2SB1434.

Contextual Info: 2SD2178 Power Transistors 2SD2178 Silicon NPN Epitaxial Planar Type • Package Dimensions AF Output Amplifier ■ Features U n it 1 mm • Low c o lle c to r-e m itte r sa tu ra tio n v o ltag e V c e m • High c o lle c to r c u rre n t (Ic) ■Absolute Maximum Ratings (Ta=25°C)

10PA

Abstract: 2SD2178
Contextual Info: Power T ranslstors 2SD2YK 2SD2178 Silicon NPN E pitaxial Planar Type Package Dimensions AF O utput A m plifier U n it : * • Features o sw ÏJIT O I • Low c o llc c to r -e m ittc r sa tu ra tio n v o lta g e V e t.—. • High c o lle c to r c u rre n t (!«.)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2178 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 90˚ • Low collector-emitter saturation voltage VCE(sat) • Large collector current IC

Contextual Info: 2SD2170 h 7 > y ^ ^ / T ransistors X 2SD2170 $ NPN '> • ;= ] > — V > h > h 7 > y ^ ^ Epitaxial Planar NPN Silicon Darlington Transistor • W R v f'iill/D im e n s io n s Unit: mm 1) 3 1 / ^ • 9 0 t 2,°0V <T)"J x i- ~ 2) 7 i t 4 'L 'o 4) K rtM o $ -j

2SD2171

Contextual Info: 2SD2537 / 2SD2171S 2SD2351 / 2SD2226K / 2SD2227S Transistors Medium Power Transistor 25V, 1.2A I 2SD2537 /2SD2171S •Features 1) 2) 3) •Absolute maximum ratings (Ta=25'C ) High O C current gain. High emitter-base voltage. (V c b o = LowVcEttM). (Max.

90g62

Abstract: 2SD2170
Contextual Info: K"7 /Transistors 2SD2170 OCn04 7A Itf^VT^l/^V-^NPN '> • ;= !>h7> V ^ ^ O a m / Ü i *-y > s > « « Epitaxial Planar NPN Silicon Transistor (Darlington) i — £ —, U Is — K 7 *f ^/Motor, Relay Drive W fi^+ÌÉES/Dimensions (Unit : mm) 1) Z l U ^ i * •

d405

Abstract: 2SC4574 D406 transistor D406 2SD2170
Contextual Info: Transistors 2SD2170 2SC4574 96-241–D405 (94L-686-D406) 313