2SD2211 HFE Search Results

2SB1236A

Abstract: 2SB1275 2SD1857A 2SD1918 2SD2211 80MHZ T100
Contextual Info: 2SD2211 / 2SD1918 / 2SD1857A Transistors Power Transistor 160V , 1.5A 2SD2211 / 2SD1918 / 2SD1857A !External dimensions (Units : mm) 2SD2211 4.0 1.0 1.5 0.4 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 !Features 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance.

2SD2211

Abstract: 2SB1236A 2SB1275 2SD1857A 2SD1918 80MHZ T100
Contextual Info: 2SD2211 / 2SD1918 / 2SD1857A Transistors Power Transistor 160V , 1.5A 2SD2211 / 2SD1918 / 2SD1857A !External dimensions (Units : mm) 2SD2211 4.0 1.0 1.5 0.4 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 !Features 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance.

2SD2211

Abstract: 2SD2211 hfe 2SB1236A 2SB1275 2SD1857A 2SD1918 80MHZ T100
Contextual Info: 2SD2211 / 2SD1918 / 2SD1857A Transistors Power Transistor 160V , 1.5A 2SD2211 / 2SD1918 / 2SD1857A zExternal dimensions (Unit : mm) 2SD2211 4.0 1.0 1.5 0.4 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 zFeatures 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance.

Contextual Info: Transistors IC SMD Type Product specification 2SD2211 SOT- 89 • Features Unit:mm 1.50 ±0.1 4.50±0.1 ● High breakdown voltage. 1.80±0.1 2.50±0.1 4.00±0.1 ● Low collector output capacitance. ● High transition frequency . 0.44±0.1 0.40±0.1 0.53±0.1

1MA160

Abstract: 2SD2211 80MHZ 2SD2211 hfe
Contextual Info: Transistors SMD Type Power Transistor 2SD2211 Features High breakdown voltage. BVCEO = 160V Low collector output capacitance. (Typ. 20pF at VCB = 10V) High transition frequency.(fT = 80MHZ) Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector to base voltage

d2400a

Abstract: transistor d2400a 2SD1916 2sd2400a 2SD1763A 2SB1275 2SD2211 SD1763A 2SB1186A 2SB1236A
Contextual Info: 2SB1275 / 2SB1236A / 2SB1569A / 2SB1186A 2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A Transistors I Power Transistor — 160V, — 1.5A 2SB1275 / 2SB1236A / 2SB1569A / 2SB 1186A •A b s o lu te m axim um rating s ( T a = 2 5 t) • F e a tu re s

Contextual Info: Transistors IC SMD Type NPN Silicon Power Transistor 2SD2211 SOT- 89 • Features Unit:mm 1.50 ±0.1 4.50±0.1 ● High breakdown voltage. 1.80±0.1 2.50±0.1 4.00±0.1 ● Low collector output capacitance. ● High transition frequency . 0.44±0.1 0.40±0.1

d1763a

Abstract: d2400a 1763A 2SD1763A D1763 d1857a B 1186a 2SB1186A 2sb1569a 1569a
Contextual Info: 2SB1275 / 2SB1236A / 2SB1569A / 2SB1186A 2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A Transistors I Power Transistor —160V, — 1.5A 2SB1275 / 2SB1236A / 2SB1569A / 2SB 1186A •F e a t u r e s 1 ) High breakdown voltage. (BV ceo~ — 160V) 2 ) Low collector output capacitance. (Typ. 30pF at V cb= 1 0 V )

transistor 2SB 367

Abstract: Power Transistors SIT sit transistor
Contextual Info: 2SD2211/2SD1918F5 b ÿ > ' y X £ /Transistors 2 S D 2 2 1 1 I f c E C 2 5 U l 9 1 O r 5 f ^ 4 r y 7 / ^ l / - ^ N P N b ? > y Z $ Epitaxial Planar NPN Silicon Transistor iSJiîS^^JiSififfl/Low Freq. Power Amp. * W f i ri'ÜEI/'Dim ensions Unit : mm 1) i o i i l l i J £ T '^ 5 o

Contextual Info: MPT • CPT F5 • PSD Package Application MPT CPT F5 PSD VcEO V *Vcís* , Vcer Part No. (A) Pc (W) Ic Max. (A) MPT (Ta=25'C ) hFE m (Tc=25'c) Vce (V) Ic (mA) Circuit 2SB1132 - - -3 2 -1 - 2* - 82—390 -3 -1 0 0 - w an ’ 2SA1900 - - -5 0 -1 -2 2* - 82—390

2SB1516

Abstract: 2SA1807 2SA1812 2sc4939 2SD2170 2SA1900 2SB1132 2SB1182 2SB1188 2SB1189
Contextual Info: 7 0 2 0 ^ 0007372 noNin IRM I bTO MPT • CPT F5 • PSD Package Application MPT CPT F5 PSD VcEO V *VCES*VCEH Part No. lc (A) Pc (W) ic Max. (A) MPT {Ta=25‘C) hFE VCE (V) Ic (mA) Circuit 2SB1132 - - -3 2 -1 - 2* - 82— 390 -3 -1 0 0 E 3 ! f 2SA1900 -

2SD2212 REEL

Abstract: 2SD1898 marking 2sd1664 2SD1834
Contextual Info: 2 W S O T- 8 9 B I P O L A R T R A N S I S T O R S • • • SQP £ each 0.1 0.5 0.1 0.5 0.1 0.5 0.5 0.1 0.20 POA 0.10 0.14 0.12 0.13 0.16 0.18 POA 0.5 0.1 0.5 0.5 0.5 0.13 0.13 0.15 0.18 POA 0.5 0.5 0.16 POA 0.01 POA 0.5 1.0 1.0 1.0 0.13 0.18 POA 0.17 SC-62 SOT-89 DIMENSIONS

2SC4074K

Abstract: TD113ZK FMC5 IMB5 DRE01 fmq1 2SA1073K imb8 IMH10
Contextual Info: Tr HUM T ransistors • Stamping List ! 1M arks are fille d w ith hFE ranks. hFE R anking In d ication Item hn Ranking L 27 - 56 M 39- N P 8 2 - 180 Q R Item h, i Ranking U 560 82 V 5 6 - 120 W X 1800 - 3900 1 2 0 - 270 Y 1 8 0 -3 9 0 A* S 270 - 560 E 390 - 820

2SK1973

Abstract: d 5072 transistor 2S01766 2S02211 2s01664 2sb1516 2S01781K 2sc4912 2SA103G 2SK2307
Contextual Info: Transistor Quick reference I Laadad p P a g e lli Package-Application Vceo V * * y,CES * * *w CER Vn«w Application EM3 UMT 2SC4081LN 40 Low Noise I 50 25 60 Package | Part No. f 2SA1037AKLN(E) SMT / 2SA1774 \2 S C 4 6 1 7 120 2SC4723 /2SA 1576A V2SC3722K

rkm 33 transistor

Abstract: g1k bc848b rkm transistor DTB133HKA DTD133HKA MMST8598 TRANSISTOR MARKING CODE R2A rkm 35 transistor 2SA1885 marking W8 transistor
Contextual Info: Abbreviated markings on mini-mold transistors Transistors Abbreviated markings on mini-mold transistors !MPT3 labels The label on the MPT3 packages indicates the product, hFE rank, and month of manufacture using 4 letters. Codes B and AF indicate products.

rds035

Abstract: rds035l03 MMST8598 fet MK10 SM6K2 2SK3065 RHU002N06 RK7002 equivalent bc847bc 2sd198
Contextual Info: Standard Transistor Product Solutions www.rohm.co.uk www.rohm.co.uk Small signal type MOSFET RHU002N06 Medium Power Bipolar Transistors 0.5W-1.2W MPT3 Package Description CPT3 MPT3 Item Application Driver Low VCE (sat) High hFE High voltage SW High voltage-High speed SW

TRANSISTOR D400

Abstract: D400 npn transistor D400 transistor TRANSISTOR NPN D400 D400 npn transistor D302 2sd2166 high hfe transistor NPN transistor 2sd1863 Transistor PNP VCEO 400V
Contextual Info: Transistors 2SA1807 2SA1862 96-102-A331 (96-109-A343) 307 Transistors 2SA1812 / 2SA1727 / 2SA1776 (96-609-A313) 320 Transistors 2SA1834 2SC5001 (96-106-B217) (96-193-D217) 292 Transistors 2SA1952 / 2SA1906 / 2SA1757 2SC5103 / 2SC4596 (96-603-A314) (96-199-C314)

113 marking code transistor ROHM

Abstract: DTDS14GP DTB133HKA rkm transistor 2SC5274 datasheet FMC1A rkm 33 transistor FMC1A rkm 24 DTD133HKA
Contextual Info: Abbreviated markings on mini-mold transistors Transistors Abbreviated markings on mini-mold transistors !MPT3 labels The label on the MPT3 packages indicates the product, hFE rank, and month of manufacture using 4 letters. Codes B and AF indicate products.

2sd198

Abstract: MARKING CODE f5 2SA1812 113 marking code transistor ROHM 2SA1690 2SD1788 2SD2211 2SK2041 F5 marking code 2SB1181
Contextual Info: Tran.qi.stnrs< S u rfa c e M ounted T v d r r > ROHM CO LTD SbE D • 7flE5cn ti D O O b ^ a 03S ■ RHPI ■MPT • CPT F5 • PSD Application MPT — F 3 S - 17 Package CPT F5 Type | 2S81132 2S81182 Ic A Ic Max (A) - -3 2 -1 - -5 0 -3 hpE W T tTa=2ST)

Contextual Info: RDNITI MPT • CPT F5 • PSD Application MPT CPT F5 PSD lc A VcEO (V) *VcB*VcER -3 2 -1 - 2* - 82—390 P Q R -3 -1 0 0 - -5 0 -1 -2 2* - 82—390 P Q R -3 -5 0 0 - 2SB1184 - -5 0 -3 - - 15 82—390 P Q R -3 -5 0 0 - 2SB1182 - -3 2 -2 - 2* 10 82—390

Contextual Info: Power Transistor 160V , 1.5A 2SD1918 / 2SD1857A Features 1) High breakdown voltage.(BVCEO=160V) 2) Low collector output capacitance. (Typ. 20pF at VCB=10V) 3) High transition frequency.(fT=80MHZ) 4) Complements the 2SB1275. Dimensions (Unit : mm) 5.1

2SD2211

Abstract: 80MHZ 2SB1275 2SD1857A 2SD1918 PW200
Contextual Info: Power Transistor 160V , 1.5A 2SD1918 / 2SD1857A Dimensions (Unit : mm) Features 1) High breakdown voltage.(BVCEO=160V) 2) Low collector output capacitance. (Typ. 20pF at VCB=10V) 3) High transition frequency.(fT=80MHZ) 4) Complements the 2SB1275. 5.1

Contextual Info: Power Transistor 160V , 1.5A 2SD1918 / 2SD1857A Features 1) High breakdown voltage.(BVCEO=160V) 2) Low collector output capacitance. (Typ. 20pF at VCB=10V) 3) High transition frequency.(fT=80MHZ) 4) Complements the 2SB1275. Dimensions (Unit : mm) 5.1

Contextual Info: RONfTI MPT • CPT F5 • PSD Application MPT CPT FS -3 2 -1 - 2* - 8 2 -3 9 0 POR -3 -1 0 0 - -1 -2 2* - 82—390 P Q R -3 -5 0 0 - 2SB1184 - -5 0 -3 - _ 15 82—390 P Q R -3 -5 0 0 - 2SB1182 - -3 2 -2 - 2* 10 8 2 -3 9 0 P Q R -3 -5 0 0 - - -8 0 -0 .7 - 2*