2SD231 Search Results

2SD2318F5

Contextual Info: v7> £ /Transistors 2SD2318F5 E M 2 S D 2 3 1 8 • W F S r W & ifc y u - l - m N P N ' > V z i > Trjp|e Transistor Triple Diffused Planar NPN Silicon Transi; «HE/Low Freq. Power Amp. 1ftff^&ES/'Dim ensions U nit: mm h FE = 1000 (Typ.) 2) V c e (sat) VCE (sat)=0.5V(Typ.)

2SD2318F5

Contextual Info: 2SD2318F5 Transistor, NPN Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: D 2 3 18 *Q , where ★ is hFE code and □ is lot number • high DC current amplification, typically hFE = 1000 • low collector saturation voltage,

Contextual Info: Transistors IC SMD Type Product specification 2SD2318 TO-252 Features High DC current gain. +0.15 1.50 -0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1

2SB1639

Abstract: 2SD2318 SC633
Contextual Info: 2SD2318 Transistors High-current gain Power Transistor 60V, 3A 2SD2318 0.9 5.1 6.5 2.3 0.65 1.5 0.5 0.8Min. C0.5 2.3 2.3 (3) (2) (1) 1.5 2.5 Symbol Limits Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO

2SD2318

Abstract: ic2 555
Contextual Info: Transistors SMD Type High-current gain Power Transistor 2SD2318 TO-252 Features High DC current gain. +0.15 1.50 -0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1

Contextual Info: 2SD2311 Silicon NPN Triple Diffused HITACHI Application CTV horizontal deflection output Features • High breakdown voltage VCB0 = 1500 V Outline 1. B a s e 2. C o lle c to r 3. E m itte r 2SD2311 Absolute Maximum Ratings Ta = 25 °C Item Sym bol Rating

2SD2311

Contextual Info: 2SD2311 Silicon NPN Triple Diffused CTV Horizontal Deflection Output Feature TO-3PFM • High breakdown voltage VCBO = 1500 V Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit ————————————————————– Collector to base voltage

2SD2318

Abstract: transistor bf 44 3818 Spice VAF5
Contextual Info: SPICE PARAMETER 2SD2318 by ROHM TR Div. * 2SD2318 NPN BJT model * Date: 2006/11/21 .MODEL 2SD2318 NPN + IS=5.0000E-12 + BF=706.52 + VAF=5 + IKF=2.3823 + ISE=5.0000E-12 + NE=1.6198 + BR=98.797 + VAR=100 + IKR=36.700E-3 + ISC=1.7366E-9 + NC=1.8494 + NK=.71386

2sd2396

Abstract: 2SD2005 2SC4614 2SD1547 2SD1554 2SD2004 2SC4290A 2sc4814 2SC4040 2SD1650
Contextual Info: - ü £ T y p e No. / 2SD 2337 fö T te t te t te t s a 2SD 2338 □ — a t 2SD 2333 2SD 2334 ^ 2SD 2335 ^ 2SD 2336 / M anu f. « h m SANYO M TOSHIBA =£ « B HITACHI ÍI 2SD143Î 2SD23D0 2SD1878 2SD1545 2SD2311 2SD2252 2SD1547 2SC4744 2SD2251 2SD1547 2SC2882

Contextual Info: High-current gain Power Transistor 60V, 3A 2SD2318 Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 6 V Collector current IC Collector power dissipation PC 3 A 4.5 A(Pulse) W W(TC=25°C) Tj 150 °C Tstg

Contextual Info: 2SD2311 Silicon NPN Triple Diffused HITACHI Application CTV horizontal deflection output Features • High breakdown voltage VCB0= 1500 V Outline I 2. C o lle c to r 3. E m itte r 2SD2311 Absolute Maximum Ratings Ta = 25 °C Item Symbol Rating Unit C o lle cto r to base vo lta g e

2SD2318

Contextual Info: High-current gain Power Transistor 60V, 3A 2SD2318 Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 6 V Collector current IC Collector power dissipation PC 3 A 4.5 A(Pulse) W W(TC=25°C) Tj 150 °C Tstg −55 to +150

2sd1944

Abstract: 2SD2316 2SB1639 2SD2318
Contextual Info: 2SB1639 2SD2318 / 2SD1944 Transistors I High-current gain Power Transistor —60V, —3A 2S B 1639 • A b s o lu te maxim um ratings (Ta=25'C ) •F e a tu re s 1 ) High DC current gain. (T yp.440 at 2 ) L o w Vce(m i). ( T y p .— 0 . 2 V V c e/ I c =

Contextual Info: 2SD2311 Silicon NPN Triple Diffused HITACHI Application CTV horizontal deflection output Features • High breakdown voltage VCBO- 1500 V Outline TO -3PFM 2SD2311 Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit Collector to base voltage ^C B O

hFE-1000

Abstract: 2SD2318F5 2SD231
Contextual Info: h7 > 2 3 £ /Transistors D 2 3 1 8 F 2SD2318F5 5 Triple Diffused Planar NPN Silicon Transistor fäH j& H ^jiS tlß l/L o w Freq. Power Amp. * ^Ji?^tS0/Dim ensions Unit: mm 1) S 3 S S ' 3 i t l i ( g $ h F E * f '''o hFE=1000 (Typ.) 2) V ce (sat) «“'ffi'-'o

2SD1944

Contextual Info: 2SB1639 2SD2318 / 2SD1944 Transistors I High-current gain Power Transistor —60V, —3 A 2SB1639 •F e a tu re s 1 ) High DC current gain. (Typ.440 at Vce/lc*=—4V/—0.5A) 2 ) Low VcE(sai). (Typ,—0 ,2 V fit Ic/Ib =—2 /—0.05A) 3 ) Complements the 2SD1944.

2SB1639

Abstract: 2sb163 2SD2318 ic 3 51 2A
Contextual Info: 2SD2318 Transistors High-current gain Power Transistor 60V, 3A 2SD2318 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Limits Unit VCBO VCEO 80 60 6 3 4.5 V V V A A(Pulse) W VEBO Collector current IC Collector power dissipation

2SD1944

Abstract: 2SD2316 2SD231B 2SB1639 2SD2318
Contextual Info: 2SB1639 2SD2318 / 2SD1944 Transistors I High-current gain Power Transistor —60V, —3A 2S B 1639 • A b s o lu te maxim um ratings (Ta=25'C ) •F e a tu re s 1 ) High DC current gain. (T yp.440 at 2 ) L o w Vce(m i). ( T y p .— 0 . 2 V V c e/ I c =

Hitachi DSA001650

Contextual Info: 2SD2311 Silicon NPN Triple Diffused Application CTV horizontal deflection output Features • High breakdown voltage VCBO = 1500 V Outline TO-3PFM 1. Base 2. Collector 3. Emitter 1 2 3 2SD2311 Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit Collector to base voltage

2SD2356

Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Power Transistors for TV and Monitor Display Package (No.) Applica­ tion VcBO ic tf max. (V) (A) 0“S) 5 0.3 10 0.3 0.3 1 10 0.5 1.5 0.8 2SD2310 1.5 1 2SD1734 2 1 2SD1575 2.5 0.8 3 0.8

Contextual Info: 2SD2318 Transistors High-current gain Power Transistor 60V, 3A 2SD2318 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Limits Unit VCBO VCEO 80 60 6 3 4.5 V V V A A(Pulse) W VEBO Collector current IC Collector power dissipation

e50p

Abstract: 2SB1639 2SD2318
Contextual Info: High-current gain Power Transistor 60V, 3A 2SD2318 •Features 1) High DC current gain. 2) Low saturation voltage. •External dimensions (Units: mm) (Typ. VcE(sat) =0.5V at Ic / Ib=2A / 0.5A) 3) Complements the 2SB1639.

Contextual Info: HITACHI 2SD2311-Silicon NPN Triple Diffused CTV Horizontal Deflection Output Feature TO-3PFM • H ig h breakdown voltage V C B O = 1500 V Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit Collector to base voltage VCB0 1500 V Collector to emitter voltage

2sd1944

Abstract: data sheet 2sd1944 2SD2318
Contextual Info: Transistors 2SD2318 / 2SD1944 96-244-D302 295