2SD2525 Search Results

2SD2525

Abstract: 2SD252
Contextual Info: TO SH IBA 2SD2525 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2525 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS 10 ± 0.2 • • High DC Current Gain : 100 Min. Low Saturation Voltage I 01.2 ,x — 1 f t V n V T o v Ï íTam — o a T t ì - ì I O A ì

TRANSISTOR B1640

Contextual Info: 2SB1640 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1640 Audio Frequency Power Amplifier Unit: mm • Low saturation voltage: VCE sat = −1.5 V (max) • Collector metal (fin) is covered with mold region. • Complementary to 2SD2525 (IC = −2 A, IB = −0.2 A)

TRANSISTOR D2525

Abstract: D2525 2SD2525 2SB1640
Contextual Info: 2SD2525 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2525 Audio Frequency Power Amplifier Applications • Unit: mm High DC current gain: 100 min · Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2 A, IB = 0.2 A) · Complementary to 2SB1640

TRANSISTOR D2525

Abstract: 2sd2525 2SB1640 D2525
Contextual Info: 2SD2525 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2525 Audio Frequency Power Amplifier Applications Unit: mm • High DC current gain: 100 min • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2 A, IB = 0.2 A) • Complementary to 2SB1640

2SD2525

Contextual Info: TOSHIBA 2SD2525 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2525 Unit in mm AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATIONS • • High DC Current Gain : 100 Min. Low Saturation Voltage : VCE(sat) = l-0V (Max.) (IC = 2A, IB = 0.2A) M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD2525 U nit in mm A U D IO FREQUENCY POWER AMPLIFIER APPLICATIONS. • • High DC Current Gain : 100 Min. Low Saturation Voltage : v CE(sat) = 1-ov (M ax.)(Ic = 2A, Iß = 0.2A) -A r M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

TRANSISTOR D2525

Abstract: D2525 2SB1640 2SD2525
Contextual Info: 2SD2525 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2525 Audio Frequency Power Amplifier Applications Unit: mm • High DC current gain: 100 min • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2 A, IB = 0.2 A) • Complementary to 2SB1640

2SB1640

Abstract: 2SD2525 ITO-220
Contextual Info: JMnic Product Specification 2SB1640 Silicon PNP Power Transistors DESCRIPTION ・With ITO-220 package ・Low collector saturation voltage ・Complement to type 2SD2525 APPLICATIONS ・Audio frequency power amplifier PINNING PIN DESCRIPTION 1 Base 2 Collector

B1640

Abstract: 2SB1640 2SD2525
Contextual Info: 2SB1640 東芝トランジスタ シリコンPNP三重拡散形 2SB1640 ○ 低周波電力増幅用 単位: mm • 飽和電圧が低い。 : VCE sat = −1.5 V (最大) (IC = −2 A, IB = −0.2 A) • 2SD2525 とコンプリメンタリになります。

TRANSISTOR B1640

Abstract: B1640 2SB1640 2SD2525 TRANSISTOR 2SB1640
Contextual Info: 2SB1640 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1640 Audio Frequency Power Amplifier • Low saturation voltage: VCE sat = −1.5 V (max) • Collector metal (fin) is covered with mold region. • Complementary to 2SD2525 Unit: mm (IC = −2 A, IB = −0.2 A)

2SB1640

Abstract: 2SD2525 ITO-220
Contextual Info: SavantIC Semiconductor Product Specification 2SB1640 Silicon PNP Power Transistors DESCRIPTION •With ITO-220 package ·Low collector saturation voltage ·Complement to type 2SD2525 APPLICATIONS ·Audio frequency power amplifier PINNING PIN DESCRIPTION 1 Base

2SB1640

Abstract: 2SD2525 ITO-220 2SD252
Contextual Info: Inchange Semiconductor Product Specification 2SB1640 Silicon PNP Power Transistors DESCRIPTION ・With ITO-220 package ・Low collector saturation voltage ・Complement to type 2SD2525 APPLICATIONS ・Audio frequency power amplifier PINNING PIN DESCRIPTION

2SB1640

Abstract: 2SD2525
Contextual Info: V IJ =l > P N P H S te iii 2SB1640 2S81640 : v C E (sat) = - 1 .5 V (f t^ C )( I c = -2 A , I ß = - 0 .2 A ) 2SD2525 t z > 7’ ’) j< > ? V IZ Ù *7 i t o • (Ta = 25°C) m a U7 ÿ ^ a X ri 1 J± 3 1/ ÿ ? . i = ? P a J I f t i 5 7 ? • ^ - X Psi Ü J ±

transistor

Abstract: power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220
Contextual Info: Part Number 2SD1160 N 2SD1140 N 2SD1224 N 2SD1508 N 2SD1631 N 2SD1784 Y 2SD2481 N 2SB907 N 2SD1222 N 2SD1412A 2SD2686 * 2SD1658 N 2SD2088 N 2SD2352 N 2SD2461 N 2SB906 N 2SD1221 N 2SB1375 N 2SD2012 N 2SD2462 N 2SB1640 N 2SD2525 N 2SD2353 N 2SB1667 Y 2SB1642 N

D2525

Abstract: 2SD2525 2SB1640
Contextual Info: 2SD2525 東芝トランジスタ シリコンNPN三重拡散形 2SD2525 ○ 低周波電力増幅用 単位: mm • 飽和電圧が低い。: VCE sat = 0.4 V (標準) (IC = 2 A, IB = 0.2 A) • 2SB1640 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C)

TRANSISTOR B1640

Abstract: B1640 2SB1640 2SD2525 2SB164 TRANSISTOR 2SB1640
Contextual Info: 2SB1640 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1640 Audio Frequency Power Amplifier Unit: mm • Low saturation voltage: VCE sat = −1.5 V (max) • Collector metal (fin) is covered with mold region. • Complementary to 2SD2525 (IC = −2 A, IB = −0.2 A)

TRANSISTOR D2525

Abstract: d2525 2sd2525 2SB1640
Contextual Info: 2SD2525 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2525 Audio Frequency Power Amplifier Applications • Unit: mm High DC current gain: 100 min • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2 A, IB = 0.2 A) • Complementary to 2SB1640

Contextual Info: 2SB1640 SILICON PNP TRIPLE DIFFUSED TYPE DARLINGTON POWER Unit in mm AUDIO FREQUENCY PO W ER AMPLIFIER. • • • Low Saturation Voltage : V q e (sat)= —1.5V (Max.) (IC = -2 A , IB = —0.2A) Collector Metal (Fin) is Covered with Mold Region Complementary to 2SD2525

Contextual Info: TOSHIBA 2SD2525 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2525 Unit in mm AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATIONS • • High DC Current Gain : 100 Min. Low Saturation Voltage •• , A - 1 ' u f i » .s a i ;— (IV' yf M ovl IT ^-9 A

TRANSISTOR D2525

Abstract: 2sd2525
Contextual Info: 2SD2525 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2525 Audio Frequency Power Amplifier Applications Unit: mm • High DC current gain: 100 min • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2 A, IB = 0.2 A) • Complementary to 2SB1640

15J102

Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811

2sC5200, 2SA1943, 2sc5198

Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Contextual Info: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428

smd transistor h2a

Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Contextual Info: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs