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Samtec Inc TW-22-12-S-D-261-115 Conn Board Stacker HDR 44 POS 2mm Solder ST Thru-Hole - Bulk (Alt: TW-22-12-S-D-261-1) Free Sample
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2SD261 Datasheets (24)

Part	Manufacturer	Description	Datasheet Type	PDF
2SD261	Continental Device India	Semiconductor Device Data Book 1996	Scan	PDF
2SD261	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF
2SD261	Unknown	Cross Reference Datasheet	Scan	PDF
2SD261	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2SD261	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2SD261	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2SD261	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SD261	Unknown	The Japanese Transistor Manual 1981	Scan	PDF
2SD261	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SD261	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SD261	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SD261	Semico	Medium Power Transistors	Scan	PDF
2SD261	USHA	Transistor. Low frequency power amplifier. Collector-base voltage Vcbo = 40V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 600mA.	Scan	PDF
2SD2611	ROHM	Power Transistor	Scan	PDF

2SD2611	ROHM	Power Transistor	Scan	PDF
2SD2611	ROHM	Power Transistor (80V, 7 A)	Scan	PDF
2SD2614	ROHM	TRANS DARLINGTON NPN 70V 5A 3TO-220FN	Original	PDF
2SD2614	ROHM	Medium Power Transistor (Motor, Relay drive) (60+10V, 5A)	Scan	PDF
2SD2615	ROHM	For Motor / Relay drive (120V, 6A)	Original	PDF
2SD2615	ROHM	Power Transistor (120V, 6A)	Scan	PDF

2SD261 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SB1676 Abstract: 2SD2618 doide base, collector, emitter Text: 2SD2618 Transistors Power Transistor 80V, 4A 2SD2618 !Circuit diagram !Features 1) Darlington connection for a high hFE. 2) Built-in resistor between base and emitter. 3) Built-in damper doide. 4) Complements the 2SB1676. C B R E R B C E 300Ω : Base : Collector	Original	PDF	2SD2618 2SB1676. 100ms) 10MHz 2SB1676 2SD2618 doide base, collector, emitter
2SB1674 Abstract: 2SD2615 Text: 2SD2615 Transistors For Motor / Relay drive 120V, 6A 2SD2615 zStructure NPN Silicon Epitaxial Planar Transistor (Darlington connection) zExternal dimensions (Unit : mm) TO-220FN 4.5 φ3.2 2.8 8.0 15.0 1.2 1.3 14.0 5.0 zFeatures 1) Darlington connection , high hFE.	Original	PDF	2SD2615 O-220FN 2SB1674 2SB1674 2SD2615
2SD2616 Abstract: No abstract text available Text: 2SD2616 Transisitors Power Transistor 100V, 5A 2SD2616 !Features 1) Low saturation voltage, typically VCE(sat) = -0.3V at IC / IB=3A / 0.3A. 2) Excellent hFE current characteristics. 3) Pc=30W. (Tc=25°C) !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage	Original	PDF	2SD2616 100ms O-220FN 2SD2616
2SB1672 Abstract: 2SD2611 Text: 2SD2611 Transistors Power Transistor 80V, 7A 2SD2611 !Features 1) Low saturation voltage, typically VCE(sat) = 0.3V at IC / IB =4 / 0.4A. 2) Excellent DC current gain characteristics. 3) Pc = 30W (Tc = 25°C) 4) Wide SOA (safe operating area). 5) Complements the 2SB1672.	Original	PDF	2SD2611 2SB1672. 100ms 2SB1672 2SD2611
2SB1676 Abstract: 2SD2618 Text: 2SB1676 Transistors Medium Power Transistor Motor, Relay drive (−80V, −4A) 2SB1676 !External dimensions (Units : mm) !Features 1) Darlington connection for a high hFE. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2618.	Original	PDF	2SB1676 2SD2618. O-220FN 10MHz 2SB1676 2SD2618
2SB1674 Abstract: 2SD2615 transistor 120v Text: 2SD2615 Transistors Power Transistor 120V, 6A 2SD2615 !Circuit diagram !Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1674. C B R1 R2 E R1 5.0kΩ	Original	PDF	2SD2615 2SB1674. 10MHz 2SB1674 2SD2615 transistor 120v
2SB1674 Abstract: 2SD2615 transistor 120v Text: 2SB1674 Transistors Power Transistor −120V, −6A 2SB1674 !External dimensions (Units : mm) !Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2615.	Original	PDF	2SB1674 -120V, 2SD2615. O-220FN -120V 10MHz 2SB1674 2SD2615 transistor 120v
Untitled Abstract: No abstract text available Text: 2SD2614 Transistors For Motor / Relay drive 60±10V, 5A 2SD2614 zStructure NPN Silicon Epitaxial Planar Transistor (Darlington connection) zExternal dimensions (Unit : mm) TO-220FN zApplications Solenoid drive 8.0 1.2 5.0 15.0 2.8 1.3 0.8 (1)Base 2.54 (2)Collector	Original	PDF	2SD2614 O-220FN
2SD2614 Abstract: No abstract text available Text: 2SD2614 Transistors Medium Power Transistor Motor, Relay drive (60±10V, 5A) 2SD2614 !Features 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to "L" loads. 3) Built-in resistor between base and emitter.	Original	PDF	2SD2614 O-220FN 2SD2614
sn76131 Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157	Original	PDF	2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
STK411-230E Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for	Original	PDF	STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
fn651 Abstract: CTB-34D 2SC5586 hvr-1x7 STR20012 sap17n 2sd2619 RBV-4156B SLA4037 2sk1343 Text: <Semiconductor Discontinued and Service Parts> 2010.8.20 Alternative Part No. 2SA744 2SA745 2SA746 2SA747 2SA764 2SA765 2SA768 2SA769 2SA770 2SA771 2SA807 2SA808 2SA878 2SA892 2SA907 2SA908 2SA909 2SA957 2SA958 2SA971 2SA980 2SA981 2SA982 2SA1067 2SA1068 2SA1102	Original	PDF	2SA744 2SA745 2SA746 2SA747 2SA764 2SA765 2SA768 2SA769 2SA770 2SA771 fn651 CTB-34D 2SC5586 hvr-1x7 STR20012 sap17n 2sd2619 RBV-4156B SLA4037 2sk1343
SK 18752 Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751 Text: Bulletin No O03ED0 （May, 2008） SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,	Original	PDF	O03ED0 dete7837 H1-O03ED0-0805020NM SK 18752 SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
ic 3A hfe 500 Abstract: ib3a 2SD2616 2sd26 Text: 2SD2616 Transisitors Power Transistor 100V, 5A 2SD2616 ! Features 1) Low saturation voltage, typically VcE(sat) = -0.3V at Ic / Ib=3A / 0.3A. 2) Excellent hFE current characteristics. 3) Pc=30W. (Tc=25°C) I Absolute maximum ratings (Ta=25°C) S ym bol Lim its	OCR Scan	PDF	2SD2616 O-220FN ic 3A hfe 500 ib3a 2SD2616 2sd26

Untitled Abstract: No abstract text available Text: TO-92 Plastic Package Transistors NPN Electrical Characteristics (Ta=25‘C, Unless Otherwise Specified) Maximum Ratings Type No. 'c PD (W) (A) 6Tc=25°t ^CBO ^CEO ^EBO (V) Min (V) Min (V) Min 2SD261 40 20 5 0.5 2SD468 25 20 5 0.9 2SD468B 25 20 5 2SD46BC	OCR Scan	PDF	2SD261 2SD468 2SD468B 2SD46BC 2SD545 2SD545D O-92-1 BC169B BC169C
2SB1676 Abstract: 2SD2618 2sd26 Text: 2SB1676 Transistors Medium Power Transistor Motor, Relay drive (-80V, -4A) 2SB1676 •External dimensions (Units: mm) •Features 1) Darlington connection for a high hre. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2618.	OCR Scan	PDF	2SB1676 2SD2618. -50nA -50pA 10MHz 2SB1676 2SD2618 2sd26
2SD2615 Abstract: 2SB1674 Text: 2SD2615 Transistors_ Power Transistor 120V, 6A 2SD2615 •Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. •Circuit diagram 3) Built-in damper diode. 4) Complements the 2SB1674.	OCR Scan	PDF	2SD2615 2SB1674. 100ms 2K-20K 10MHz 2SD2615 2SB1674
TO-220FN Abstract: 2SB1674 2SD2615 2sd26 Text: 2SB1674 Transistors Power Transistor -120V, -6A 2SB1674 •External dimensions (Units: mm) •Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2615.	OCR Scan	PDF	2SB1674 -120V, 2SD2615. O-220FN -10MHZ TO-220FN 2SB1674 2SD2615 2sd26
2SB1672 Abstract: 2SD2611 Text: 2SD2611 Transistors Power Transistor 80V, 7A 2SD2611 • Features 1) Low saturation voltage, typically Vc^sat) = 0.3V at Ic / 2) Excellent DC current gain characteristics. Ib =4 / 0.4A. 3) Pc = 30W (Tc = 25°C) 4) Wide SOA (safe operating area). 5) Complements the 2SB1672.	OCR Scan	PDF	2SD2611 2SB1672. 100ms O-220FN 2SB1672 2SD2611
LT 672 Abstract: 2SB1672 2SD2611 Text: 2SD2611 Transistors Power Transistor 80V, 7A 2SD2611 • Features 1 ) Low saturation voltage, typically Versai) = 0.3V at le / 2) Excellent DC current gain characteristics. Ib =4 / Q.4A. 3) Pc = 30W (Te = 25°C) 4) Wide SOA (safe operating area). 5) Complements the 2SB1672.	OCR Scan	PDF	2SD2611 2SB1672. 100ms O-220FN 50fiA LT 672 2SB1672 2SD2611
2SD2618 Abstract: 2SB1676 Text: 2SD2618 Transistors_ Power Transistor 80V, 4A 2SD2618 •Circuit diagram • Features 1 ) Darlington connection for a high hre. 2) Built-in resistor between base and emitter. 3) Built-in damper ddde. 4) Complements the 2SB1676.	OCR Scan	PDF	2SD2618 2SB1676. 100ms) O-220FN 1k-10k characterist10k 10MHz 2SD2618 2SB1676
2SB1672 Abstract: 2SD2611 Text: 2SD2611 Transistors Power Transistor 80V, 7A 2SD2611 • Features 1) Low saturation voltage, typically Vc^sat) = 0.3V at le / 2) Excellent DC cument gain characteristics. Ib =4 / 0.4A. 3) Pc = 30W (Te = 25°C) 4) Wide SOA (safe operating area). 5) Complements the 2SB1672.	OCR Scan	PDF	2SD2611 2SB1672. 100ms O-220FN B444S 2SB1672 2SD2611
2SD468C Abstract: 2SD786R BC169C BC170 2SD545E 2SD545F BC169C transistors 2SD786 2SD261 2SD468 Text: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. Vcbo (V) Min V C E0 ^EBO (V) Min (V) Min Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Pd (W) (A) @Tc=25°t @ lc & (mA) 'cBO V CB 'c e s v ce (UA) Max § (V) (UA) Max 0 (V )	OCR Scan	PDF	2SD261 O-92-1 2SD468 2SD468B 2SD468C BC168B 2SD786R BC169C BC170 2SD545E 2SD545F BC169C transistors 2SD786
2SD261 Abstract: 2SA643 P185 transistor 2sa643 transistor 2sd261 BA RV 251C S6095 Text: 2SA643 2SA643 PNP x U S IL IC O N E P IT A X IA L T R A N S IS T O R Frequency Pow er A m p lifie r 1# /F E A T U R E S W E I/P A C K A G E DIMENSIONS Unit-.mm S u ita b le f o r aud io p o w er ou tp u t a p p lica tio n s. • a. 2. OW g S S r i i -5 r i: # T ' i -5»	OCR Scan	PDF	2SA643 2SD261 2SD261. 2SA643 P185 transistor 2sa643 transistor 2sd261 BA RV 251C S6095

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2SD261 Search Results

2SD261 Price and Stock

Samtec Inc TW-22-12-S-D-261-115

2SD261 Datasheets (24)

2SD261 Datasheets Context Search

2SB1676

2SB1674

2SD2616

2SB1672

2SB1676

2SB1674

2SB1674

Untitled

2SD2614

sn76131

STK411-230E

fn651

SK 18752

ic 3A hfe 500

Untitled

2SB1676

2SD2615

TO-220FN

2SB1672

LT 672

2SD2618

2SB1672

2SD468C

2SD261