2SK121 Search Results

251C

Abstract: 2SK1214 H150
Contextual Info: P ow er F-MOS FET 2SK 1214 2SK1214 Silicon N-channel Power F-M O S FET Package Dimensions • Features • • • • Low ON resistan ce RDS on : RDs (on) l = 0 .0 6 il (typ.) High sw itching rate : tf= 110ns (typ.) No secondary breakdow n Low voltage drive is possible (VGs= 4 V ).

T0220F

Abstract: 2sk1512 2SK1217 2SK1511 T0-220F 2SK1084 2SK1388 2MI200F-025 2sk1018 2SK1390
Contextual Info: 22307^2 ODGISTT OTT « C O L COLLHER SEMICONDUCTOR INC MÛE » •v-m-yy MUSFETS s F-ll SERIES (toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 R atings Id (A) V dss OO 900 900 900 900 1000 C h aracteristics (Tc=25°C)

TT 2158

Contextual Info: 2SK1212-01R FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I SERIES • Features • High current • Low orwesistance • No secondary breakdown • Low driving power • Avalanche-proof ■ Applications • DC-DC converters • Motor controllers • Gt neral purpose power amplifier

2SK121

Abstract: Audio T R-10kn
Contextual Info: SONY» 2SK121 Silicon N-Channel Junction F E T • L o w Noise. H igh Gm • P ream plifiers fo r A u d io . V id e o • S w itchings >«•- 1 i J W ' ' l & f t S A Z t l A b s o lu t* M a x im u m R atin gs T , = 2 5 "C C haracteristics | j îy m b o l

2SK359

Abstract: 2sk1215
Contextual Info: HITACHI 2SK1215-Silicon N channel MOS FET VHF High Frequency Amplifier Table 1 Absolute Maximum Ratings CMPAK Ta = 25°C Item Symbol Rating Unit Drain to source voltage VDSx* 20 V Gate to source voltage VGSs ±5 V Drain current lp 30 mA Gate current

2SK1215

Abstract: 2SK359
Contextual Info: 2SK1215 Silicon N channel MOS FET VHF High Frequency Amplifier Table 1 Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit ——————————————————————– Drain to source voltage VDSX* 20 V ——————————————————————–

mosfet 2sk

Contextual Info: 2SK1217-01 SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F A P - I I S E R I E S lOutline Drawings • Features • High speed sw itching • Low o n-resistance • No secondary b reakd ow n • Low driving p ow er • High voltage • V GSs = ± 3 0 V G uarantee

2SK962

Abstract: T03P 2MI200F-025
Contextual Info: COLLHER SEMICONDUCTOR INC 22367^2 OOGIS?^ OTT « C O L 4ÔE » MOSFETS <§ F-ll SERIES toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 Ratings lo (A) Vdss(V) 900 900 900 900 1000 Characteristics (Tc=25°C) Sis(S)

M1B marking

Contextual Info: 2SK1214 Switching Diodes MA159A Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 +0.1 0.4 –0.05 1.45 • Features 0.5R Unit 0.1 to 0.3 VR 80 V Repetitive peak reverse voltage VRRM 80 V

2SK1215

Abstract: 2SK1215IGETL 2SK1215IGFTL PTSP0003ZA-A
Contextual Info: 2SK1215 Silicon N-Channel MOS FET REJ03G0813-0200 Previous ADE-208-1176 Rev.2.00 Aug.10.2005 Application VHF amplifier Outline RENESAS Package code: PTSP0003ZA-A (Package name: CMPAK R ) 3 1 2 *CMPAK is a trademark of Renesas Technology Corp. Rev.2.00 Aug 10, 2005 page 1 of 5

2SK1215

Abstract: 2SK359 DSA003638
Contextual Info: 2SK1215 Silicon N-Channel MOS FET ADE-208-1176 Z 1st. Edition Mar. 2001 Application VHF amplifier Outline CMPAK 3 1 2 1. Gate 2. Drain 3. Source 2SK1215 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 1 Ratings Unit 20 V Drain to source voltage VDSX* Gate to source voltage

2SK1212-01

Contextual Info: 2SK1212-01 S IP M O S F U J I P O W E R M O S -F E T N-CH AN NEL SILICON POWER MOS-FET F-I • Features ■ O u tlin e Drawings SERIES • High c u rren t 5.5*“ • Low on-resistance • No secondary b reakd ow n • Low driving p o w er • A v a la n c h e -p ro o f

2SK1212-01

Abstract: DDD3015 2Sk 111
Contextual Info: 2SK1212-01 S IP M O S F U J I P O W E R M O S -F E T N-CH AN NEL SILICON POWER MOS-FET F-I • Features ■ O u tlin e Drawings SERIES • High c u rren t 5 .5 * “ • Low on-resistance • No secondary b reakd ow n • Low driving p o w er • A v a la n c h e -p ro o f

e304 fet

Abstract: 2SK581 Siliconix E304 MPF4860 TP5950 PN4304 InterFET bf256s PN4222 U199
Contextual Info: JUNCTION FET Item Number Part Number Manufacturer V BR GSS IDSS (V) (A) 9,. Min (S) Max VGS(otf) Max (V) IGSS Max (A) Clsa Max (F) PD Max (W) Derate at Toper (WrC) (OC) Max Package Style N-Chann I JFETs, (Cont'd) -5 10 BF256B BF256LB PF51 02 2SK121 ESM4092

Contextual Info: 2SK1214 Switching Diodes M A 1 4 2 WA Silicon epitaxial planer type Unit : mm For switching circuits 2.1±0.1 0.425 1.25±0.1 0.425 high-density mounting 0.3–0 Small S-Mini type package with two incorporated elements, enabling 2.0±0.2 1.3±0.1 0.65 0.65

Contextual Info: 2SK1214 Power F-MOS FETs 2SK1214 Silicon N-Channel Power F-MOS Unit : mm ● High-speed secondary breakdown ● Low-voltage 16.7±0.3 ● No switching : tf =110ns typ drive 4.2±0.2 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 ON-resistance RDS(on) : R DS(on)1= 0.06Ω(typ)

2sk1217

Abstract: 2SK1217-01R 1217-01R
Contextual Info: 2SK1217-01R FUJI POWER MOS-FET N - C H A N N E L S IL IC O N P O W E R M O S - F F.T _ - T T ^ r - r * i r- F -ll SERIES lOutline Drawings • Features • High speed switching • l.ow on-resistance • No secondary breakdown • Low driving power

2SK1212-01R

Abstract: SS5080
Contextual Info: 2SK1212-01R FUJI POWER MOS-FET F-I SERIES N-CHANNEL SILICON POWER MOS-FET lOutline Drawings • Features • High cu rre n t • Lo w o n-re sista n ce • No se condary b re a kd o w n • Low drivin g p o w e r • Avalanche-proof ■ Applications • D C -D C co n ve rte rs

2SK1214

Abstract: 5N60 bt353 bt353s5 H3228
Contextual Info: Power F-MOS FET 2SK1214 2SK1214 Silicon N-channel Power F-MOS FET Package Dimensions • Features • L ow ON r e s is ta n c e R Ds on : RDs (on) l = 0 .0 6 f i (ty p .) Unit: mm • H igh sw itc h in g r a te : t f= 110ns (ty p .) • N o se c o n d a ry b re a k d o w n

M2D Package

Contextual Info: 2SK1214 Switching Diodes MA121 Silicon epitaxial planer type Unit : mm • Features +0.2 ● Three-element incorporated in one package, enabling high-density 2.8 –0.3 +0.25 1.5 –0.05 mounting +0.1 +0.1 0.3 –0.05 2 4 3 +0.1 0.16–0.06 +0.2 5 0.8 2.9 –0.05

2SK1217

Abstract: 2SK962 2SK1512 MOSFET Modules 2SK1008-01 2SK1010-01 2SK1012-01 2SK1082 2SK1511 2SK1171
Contextual Info: COLLHER SEMICONDUCTOR INC 22307^2 ODGISTT OTT « C O L MÛE » •v-m-yy MUSFETS s F-ll SERIES (toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 R atings Id (A) V dss OO 900 900 900 900 1000 C h aracteristics (Tc=25°C)

transistor mark ige

Abstract: 2SK1215 2SK359 DSA003761
Contextual Info: 2SK1215 Silicon N-Channel MOS FET Application VHF amplifier Outline CMPAK 3 1 2 1. Gate 2. Drain 3. Source 2SK1215 Absolute Maximum Ratings Ta = 25°C Item Symbol 1 Ratings Unit 20 V Drain to source voltage VDSX* Gate to source voltage VGSS ±5 V Drain current

2SK1213

Abstract: transistor 2sk1213 D 1062 transistor adit Field Effect Transistor Silicon N Channel MOS vdss 600
Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSH 2SK1213 HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR,DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. INDUSTRIAL APPLICATIONS FEATURES: • Low Drain-Source ON Resistance : RDS(0N)= 0.95Q (Typ.)

2SK1082

Abstract: T0220F 2SK1512 T0-220F 2SK1018-01 2SK1084 2SK1388 2SK1217 2SK1090 2SK1276
Contextual Info: 22307^2 ODGISTT OTT « C O L COLLHER SEMICONDUCTOR INC MÛE » •v-m-yy MUSFETS s F-ll SERIES (toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 R atings Id (A) V dss 0 0 900 900 900 900 1000 C h aracteristics (Tc=25°C)