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    2SK1337 Price and Stock

    Rochester Electronics LLC 2SK1337TZ-E

    SMALL SIGNAL N-CHANNEL MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK1337TZ-E Bulk 1,249
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    Renesas Electronics Corporation 2SK1337(TZ-E)

    Trans MOSFET N-CH Si 100V 0.3A 3-Pin TO-92
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2SK1337(TZ-E) 13,787 1,528
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    2SK1337(TZ-E) 5,403 1,528
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    Renesas Electronics Corporation 2SK1337TZ-E

    2SK1337 - Small Signal Field-Effect Transistor, 0.3A, 100V, N-Channel MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2SK1337TZ-E 19,190 1
    • 1 $0.2311
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    • 1000 $0.1964
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    2SK1337 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK1337 Hitachi Semiconductor Silicon N Channel MOS FET Original PDF
    2SK1337 Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
    2SK1337 Renesas Technology Silicon N Channel MOS FET Original PDF
    2SK1337 Renesas Technology Silicon N-Channel MOS FET Original PDF
    2SK1337 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SK1337 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK1337 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1337 Unknown FET Data Book Scan PDF

    2SK1337 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Hitachi DSA002713

    Abstract: No abstract text available
    Text: 2SK1337 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features x x x x x Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    Original     		PDF 2SK1337 Hitachi DSA002713

    Untitled

    Abstract: No abstract text available
    Text: 2SK1337 Silicon N Channel MOS FET REJ03G0934-0200 Previous: ADE-208-1274 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source


    Original     		PDF 2SK1337 REJ03G0934-0200 ADE-208-1274) PRSS0003ZA-A

    Hitachi DSA00279

    Abstract: No abstract text available
    Text: 2SK1337 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    Original     		PDF 2SK1337 Hitachi DSA00279

    2SK1337

    Abstract: Hitachi DSA00388
    Text: 2SK1337 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    Original     		PDF 2SK1337 2SK1337 Hitachi DSA00388

    2SK1337

    Abstract: DSA003639
    Text: 2SK1337 Silicon N-Channel MOS FET ADE-208-1274 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    Original     		PDF 2SK1337 ADE-208-1274 2SK1337 DSA003639

    Hitachi DSA002757

    Abstract: No abstract text available
    Text: 2SK1337 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    Original     		PDF 2SK1337 Hitachi DSA002757

    Hitachi DSA002779

    Abstract: No abstract text available
    Text: 2SK1337 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    Original     		PDF 2SK1337 D-85622 Hitachi DSA002779

    2SK1337

    Abstract: PRSS0003DA-A PRSS0003ZA-A SC-43A
    Text: 2SK1337 Silicon N Channel MOS FET REJ03G0934-0200 Previous: ADE-208-1274 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source


    Original     		PDF 2SK1337 REJ03G0934-0200 ADE-208-1274) PRSS0003ZA-A 2SK1337 PRSS0003DA-A PRSS0003ZA-A SC-43A

    2SK1337

    Abstract: 2SK1698
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF

    2SK1337

    Abstract: 2SK1698 DSA003639
    Text: 2SK1698 Silicon N-Channel MOS FET ADE-208-1314 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from 5 V source.


    Original     		PDF 2SK1698 ADE-208-1314 2SK1337 2SK1698 DSA003639

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    2SK3235

    Abstract: 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053
    Text: HAT2038R/HAT2038RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-666C Z 4th. Edition Feb. 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting


    Original     		PDF HAT2038R/HAT2038RJ ADE-208-666C HAT2038R HAT2038RJ pdf\7420e HAT1044M HAT1053M 2SK3235 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053

    2sk 4207

    Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
    Text: CONTENTS Index . 5 General Information . 9


    Original     		PDF D-85622 2sk 4207 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent

    7054F

    Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
    Text: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver


    Original     		PDF 2sc4537 2sc454. 2sc4591 2sc4592 2sc4593 2sc460. 2sc4628 2sc4629 2sc4643 2sc4680 7054F BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557

    2SK1337

    Abstract: No abstract text available
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1337 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    OCR Scan     		PDF 2SK1337

    Untitled

    Abstract: No abstract text available
    Text: 2SK1337 Silicon N-Channel MOS FET HITACHI Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    OCR Scan     		PDF 2SK1337

    2SK1377

    Abstract: 2SK1349 2SK1357 2SK1356 2SK1373 2SK1333 2sk1346 2SK1375 2SK1348 2SK1351
    Text: f m it e m £ H y & tit Ü % K 2SK1333 X % V* V * ft (V) Motor-D, DDC MOS N B 500 DSS ±20 S SW-Reg, DDC MOS N E 200 DSS ±20 BÍL SW-Reg, DDC MOS N E 200 DSS ±20 BÍL Motor/Relay-D MOS N E 60 DSS ±20 2SK1337 BÎL Motor/Relay-D MOS ±20 BÎL SW-Reg, DDC


    OCR Scan     		PDF 2SK1333 2SK1334 2SK1335 2SK1336 2SK1337 120nstyp 2SK1358 82nstyp 2SK1359 147ns, 2SK1377 2SK1349 2SK1357 2SK1356 2SK1373 2SK1333 2sk1346 2SK1375 2SK1348 2SK1351

    diode sv 03

    Abstract: 2SK1337 C 12 PH diode
    Text: HITACHI 2SK1337 S ILIC O N N -C H AN N EL MOS FET HIGH SPEED POWER SWITCHING W FEATURES • • Low On-Resistance High Speed Switching • Low Drive Current • 4 V Gate Drive Device — Can be driven from 5 V source • Suitable for Motor Drive, DC-DC Converter, Power


    OCR Scan     		PDF 2SK1337 Ta-25Â diode sv 03 C 12 PH diode

    Untitled

    Abstract: No abstract text available
    Text: 2SK1698 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — can be driven from 5 V source. • Suitable for DC - DC converter, motor drive, power switch, solenoid drive


    OCR Scan     		PDF 2SK1698

    2SJ235

    Abstract: 2sk1299 2SK1878 2SJ299 2sj2 high voltage p channel mosfet 2SJ214 2sk mosfet 2SK1151 2SK1152 2SK1153
    Text: HITACHI 31 Power MOSFET for Switching Power Supply I _ i/ass«nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be isolated from each other. -tow


    OCR Scan     		PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2SJ235 2sk1299 2SK1878 2SJ299 2sj2 high voltage p channel mosfet 2SJ214 2sk mosfet

    2SK44

    Abstract: 2SJ182 2SJ214 2SK513 2SK1151 2SK1152 2SK1153 2SK579 2SK580 2SJ235
    Text: 31 HITACHI Power MOSFET for Switching Power Supply I _ Commendation products Input i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be


    OCR Scan     		PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2SK44 2SJ182 2SJ214 2SK513 2SJ235

    APC UPS es 500 CIRCUIT DIAGRAM

    Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
    Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.


    OCR Scan     		PDF ADE-408 50502C APC UPS es 500 CIRCUIT DIAGRAM sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212

    2sk1299

    Abstract: PF0042 2SJ295 2SJ299 2SK1919 PF0040 KWSA103 PF0030 Hitachi Scans-001
    Text: 29 HITACHI 5.4 Communications Mobile RF SAW Filters NMT/GSM KTACS HITACHI KAMT« Tb Bx Tu ft* T» 9m, hvm U m Typ IC - 4ädB Wide band aaaaMtkw •OStfBqrp SMD pàg - 4.5 s 5 J s 2mm 505L fan p riiw HWSAHB HWSB102 HWSAXB HWSBXa HW SA03 H W SM » O m« Q m


    OCR Scan     		PDF 303L/3Â KWSA103 HWSA10I HWSB10I HWSA01 PF0030 PP0031 PF0040 PP004I 2sk1299 PF0042 2SJ295 2SJ299 2SK1919 Hitachi Scans-001