2SK154 Search Results

Contextual Info: T O SH IB A _ 2SK1544 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SIII-5 2 S K 1 5 4 4 INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS.

2SK1544

Contextual Info: 2SK1544 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII.5 2SK1544 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.15 Ω (typ.) High forward transfer admittance : |Yfs| = 21 S (typ.) Low leakage current

Contextual Info: TOSHIBA Discrete Semiconductors 2SK1544 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOSType ji-MOS III.5 High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • Low Drain-Source ON Resistance

Contextual Info: 2SK1548-01M SIPMOS FU JI POWER M O S-FET N-CHANNEL SILICON POWER MOS-FET FAP-II SERIES • Features IOutline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V gss = ± 30V Guarantee

Contextual Info: TOSHIBA 10^7250 0G23314 T O SH IB A FIELD EFFECT T RA N SIST O R 2SK1542 TbT SILICO N N C H A N N E L M O S TYPE L2-;r-M O SIV 2 S K 1 542 INDUSTRIAL APPLICATIONS H IGH SPEED SW IT C H IN G APPLICATION S. RELA Y DRIVE, M O T O R D RIV E A N D D C -D C C O N V ER TER APPLICATION S.

a2231

Abstract: ups electrical symbols
Contextual Info: 2SK1549 SIPMOS F U JI POWER M O S -FET N-CHANNEL SILICON POWER MOS-FET _ - F-I SERIES • Features IOutline Drawings • High speed switching • Low on-resistance • Low driving power • High voltage ■ Applications • Switching regulators

Contextual Info: 2SK1540 L (S), 2SK1541(L)(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter

2sk154

Contextual Info: 2SK154 Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)20Ê I(D) Max. (A)30m I(G) Max. (A) Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC) I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A) V(GS)off Max. (V)

2sk154

Contextual Info: 2SK1544 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII.5 2SK1544 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance z High forward transfer admittance Unit: mm : RDS (ON) = 0.15 Ω (typ.) : |Yfs| = 21 S (typ.)

2SK1544

Contextual Info: 2SK1544 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII.5 2SK1544 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.15 Ω (typ.) High forward transfer admittance : |Yfs| = 21 S (typ.) Unit: mm

Contextual Info: 2SK1546 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)900 V(BR)GSS (V) I(D) Max. (A)2.5 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)40 Minimum Operating Temp (øC)

Contextual Info: 2SK1545 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)800 V(BR)GSS (V) I(D) Max. (A)3 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)40 Minimum Operating Temp (øC)

Contextual Info: 2SK1547-01M Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)800 V(BR)GSS (V)30 I(D) Max. (A)4.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)10 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)40# Minimum Operating Temp (øC)

2SK2079-01M

Abstract: 2SK2079 2SK2001-01M 2SK1549 2SK900 2SK901 2SK902 2SK905 2SK906 2SK947M
Contextual Info: MOSFETs F-l Series Low RdS ON 50 - 900 Volts Device Type 2SK905 2SK906 2SK900 2SK947M 2SK901 2SK1549 2SK902 2SK949M 2SK950 2SK724 2SK725 2SK899 2SK897M 2SK903M 2SK904 2SK1105 2SK1663 2SK1384 2SK955 2SK960M 2SK961 Miiximum Ratin as I d (A) V d s s (V ) 45

Contextual Info: 2SK1549-R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- I SERIES Outline Drawings 15.5 ±0.3 2.1±0.3 Switching regulators 1.6 ±0.3 +0.2 1.1 —0.1 UPS DC-DC converters General purpose power amplifier 5.45 ±0.2 5.45 ±0.2 ±0.3 3.2 +0.3 ±0.3 2.3 ±0.2

Hitachi DSA002779

Contextual Info: 2SK1540 L (S), 2SK1541(L)(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter

K1544

Abstract: diode U1J u1j diode 2SK1544
Contextual Info: TOSHIBA 2SK1544 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII-5 2 S K 1 544 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. Low Drain-Source ON Resistance : RßS (ON) = 0.15 O (Typ.)

Hitachi DSA001651

Contextual Info: 2SK1540 L (S), 2SK1541(L)(S) Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter

2SK1542

Contextual Info: TOSHIBA 2SK1542 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOS]V 2 S K 1 5 42 HIGH SPEED SWITCHING APPLICATIONS. RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATIONS. • • • • • INDUSTRIAL APPLICATIONS Unit in mm 4-Volt Gate Drive

2SK2079

Abstract: 2SK2079-01M
Contextual Info: S MOSFETs F-l Series Low Rds (ON 50 - 900 Volts Device Type 2SK905 2SK906 2SK900 2SK947M 2SK901 2SK1549 2SK902 2SK949M 2SK950 2SK724 2SK725 2SK899 2SK897M 2SK903M 2SK904 2SK1105 2SK1663 2SK1384 2SK955 2SK960M 2SK961 Maximum Ratinas Id (A) V dss (V) Pd (W)

2SK1544

Contextual Info: 2SK1544 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII.5 2SK1544 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.15 Ω (typ.) z High forward transfer admittance : |Yfs| = 21 S (typ.)

2SK1212

Abstract: 2sk904 replacement
Contextual Info: <5 MOSFETs F-l Series - Low R d s ON 50 - 900 Volts Device Type 2SK905 2SK906 2SK900 2SK947MR 2SK901 2SK1549R 2SK902 2SK949MR 2SK950 2SK724 *2SK725 2SK899 2SK897MR '2SK903MR *2SK904 •2SK1105R *2SK1663L,S •2SK1384R •2SK955 2SK960MR 2SK961 Maximum Ratinas

Contextual Info: 2SK1548 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)900 V(BR)GSS (V) I(D) Max. (A)3.5 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)40 Minimum Operating Temp (øC)

2SK725

Abstract: 2sk899 2SK960 90-340 K949 2SK900 2SK903MR k902 k952 2SK1549R
Contextual Info: <S MOSFETs F-l Series - Low R d s ON 50 - 800 Volts Device Type 2SK905 2SK906 2SK900 2SK947MR 2SK901 2SK1549R 2SK9Ò2 2SK949MR 2SK950 2SK724 2SK725 2SK899 2SK897MR 2SK903MR 2SK904 2SK1105R 2SK1663L.S 2ÔK1384R 2SK955 2SK960MR 2SK961 Miaximum Ratifias V dss (V)