2SK2009 Search Results

Contextual Info: TOSHIBA 2SK2009 i ^ \c i TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE nnq Unit in mm HIGH SPEED SWITCHING APPLICATIONS. ANALOG SWITCH APPLICATIONS. • • • • • • + 0.5 25 -0 .3 + 0.25 High Input Impedance. Low Gate Threshold Voltage

2SK2009

Contextual Info: TO SH IBA 2SK2009 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2009 HIGH SPEED SWITCHING APPLICATIONS. ANALOG SWITCH APPLICATIONS. • High Input Impedance. • Low Gate Threshold Voltage Vth = 0.5~1.5V • Excellent Switching Times ton = 0.06yt/s Typ.

Contextual Info: TOSHIBA 2SK2009 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2009 HIGH SPEED SWITCHING APPLICATIONS. ANALOG SWITCH APPLICATIONS. • High Input Impedance. • Low Gate Threshold Voltage Vth = 0.5~1.5V • Excellent Switching Times ton = 0.06,i/s Typ.

2SK2009

Contextual Info: 2SK2009 東芝電界効果トランジスタ シリコンNチャネルMOS形 2SK2009 ○ 高速スイッチング用 ○ アナログスイッチ用 単位: mm • 入力インピーダンスが高く, 駆動電流が小さい。 • Vth が低く, 低電圧での CMOS などからの直接駆動が可能。

2SK2009

Contextual Info: 2SK2009 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2009 High Speed Switching Applications Analog Switch Applications • High input impedance. • Low gate threshold voltage: Vth = 0.5~1.5 V • Excellent switching times: ton = 0.06 s typ.

Contextual Info: Reliability Tests Report Product Name: 2SK2009 Package Name: S-Mini 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Flow) Heat resistance (Iron) Temperature cycling Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s

Contextual Info: SILICON P CHANNEL MOS TYPE 2SJ305 HIGH SPEED SWITCHING APPLICATIONS. ANALOG APPLICATIONS. • • • High Input Impedance Low Gate Threshold Voltage. Excellent Switching Times. • • • Low Drain-Source ON Resistance. Small Package. Complementary to 2SK2009.

2SK2009

Contextual Info: TOSHIBA 2SK2009 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2009 HIGH SPEED SWITCHING APPLICATIONS. ANALOG SWITCH APPLICATIONS. • H ig h In p u t Impedance. • Low G ate Threshold Voltage V th = 0.5~1.5V • Ex cellen t Sw itch in g Tim es

Contextual Info: 2SK2009 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2009 High Speed Switching Applications Analog Switch Applications • High input impedance. • Low gate threshold voltage: Vth = 0.5 to 1.5 V • Excellent switching times: ton = 0.06 s typ.

Contextual Info: 2SK2009 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2009 High Speed Switching Applications Analog Switch Applications • High input impedance. • Low gate threshold voltage: Vth = 0.5~1.5 V • Excellent switching times: ton = 0.06 s typ.

2SK2009

Contextual Info: 2SK2009 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2009 High Speed Switching Applications Analog Switch Applications • High input impedance. • Low gate threshold voltage: Vth = 0.5~1.5 V • Excellent switching times: ton = 0.06 s typ.

2SK2009

Abstract: TO-236Mod
Contextual Info: 2SK2009 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2009 High Speed Switching Applications Analog Switch Applications • High input impedance. • Low gate threshold voltage: Vth = 0.5~1.5 V • Excellent switching times: ton = 0.06 µs typ.

Contextual Info: TOSHIBA 2SJ305 TOSHIBA FIELD EFFECT TRANSISTOR i HIGH SPEED SWITCHING APPLICATIONS. ANALOG APPLICATIONS. • High Input Impedance • Low Gate Threshold Voltage. • Excellent Switching Times. • • • Low Drain-Source ON Resistance. Small Package. Complementary to 2SK2009.

619 sc-59

Contextual Info: SILICON N CHANNEL MOS TYPE 2SK2009 U nit in mm HIGH SPEED SW ITCHING APPLICATIONS. A N A L O G SWITCH APPLICATIONS. • • • • • • High Input Impedance. Low Gate Threshold Viltage Excellent Switching Times : Vt,h = 0.5~1.5V : ton = 0.06,us Typ.

2SK2009

Abstract: TO236
Contextual Info: 2SK2009 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2009 High Speed Switching Applications Analog Switch Applications • High input impedance. · Low gate threshold voltage: Vth = 0.5~1.5 V · Excellent switching times: ton = 0.06 µs typ.

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

2SJ305A

Abstract: 2sj305 2SK2009
Contextual Info: 2SJ305 東芝電界効果トランジスタ シリコンPチャネルMOS形 2SJ305 ○ 高速スイッチング用 ○ アナログスイッチ用 単位: mm • 入力インピーダンスが高く, 駆動電流が小さい。 • Vth が低く, 低電圧での CMOS などからの直接駆動が可能。

5252 F 1009 4-pin

Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Contextual Info: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

2sj305

Abstract: 2SK2009
Contextual Info: TO SH IBA 2SJ305 T O SH IB A FIELD EFFECT TR A N SIST O R SILICON P C H A N N E L M O S TYPE 2SJ305 Unit in mm HIGH SPEED SW IT C H IN G A PP LIC A T IO N S A N A L O G A PP LIC A TIO N S • • • High Input Impedance Low Gate Threshold Voltage. Excellent Switching Times.

SSM3K7002

Abstract: ESM 310 SSM3J16FU SSM3K03TE zener diode reference guide SSM5N03FE US6 KEC SSM5G01TU 6798 SSM3J13T
Contextual Info: S-MOS Series Small-Signal MOSFETs for Switching PRODUCT GUIDE S -MOS Family S-MOS Family Toshiba presents a range of small-signal MOSFET S-MOS devices which have been developed for various switching, interface and DC/DC converter applications. These MOSFETs have been classified into families according to application,

Contextual Info: 2SJ305 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ305 High Speed Switching Applications Analog Applications • High input impedance • Low gate threshold voltage.: Vth = −0.5~−1.5 V • Excellent switching times.: ton = 0.06 s typ.

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.