2SK2315 Search Results

2SK2315TYTR

Abstract: 2SK2315 2SK2315TYTL-E 2SK2315TYTR-E 2SK2315TY(TR-E)
Contextual Info: 2SK2315 Silicon N Channel MOS FET REJ03G1006-0200 Previous: ADE-208-1354 Rev.2.00 Sep.07,2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source.

2SK2315

Abstract: Hitachi DSA00395
Contextual Info: 2SK2315 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source. Suitable for DC-DC converter, motor drive, power switch, solenoid drive

Hitachi DSA001652

Contextual Info: 2SK2315 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source. Suitable for DC-DC converter, motor drive, power switch, solenoid drive

Hitachi DSA00279

Contextual Info: 2SK2315 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source. Suitable for DC-DC converter, motor drive, power switch, solenoid drive

Contextual Info: 2SK2315 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 2.5 V gate drive device can be driven from 3 V source. • Suitable for DC-DC converter, motor drive, power switch, solenoid drive

Contextual Info: 2SK2315 Silicon N-Channel MOS FET HITACHI Application H igh speed pow er sw itching Features • Low on-resistancc • H igh speed sw itching • Low drive current • 2.5 V gate drive device can be driven from 3 V source. • Suitable for D C -D C converter, m otor drive, pow er sw itch, solenoid drive

2SK2315

Abstract: 2SK2315TYTL-E 2SK2315TYTR-E
Contextual Info: 2SK2315 Silicon N Channel MOS FET REJ03G1006-0200 Previous: ADE-208-1354 Rev.2.00 Sep.07,2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source.

Contextual Info: 2SK2315 Si li con N C h a nn el MOS FET Application High speed power switching Features • • • • Low on—resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source. • Suitable for DC - DC converter, motor drive,

2SK2315

Contextual Info: 2SK2315 Silicon N Channel MOS FET Application UPAK High speed power switching Features 3 Low on–resistance High speed switching Low drive current 2.5 V gate drive device - - - can be driven from 3 V source. • Suitable for DC – DC converter, motor drive,

Hitachi DSA00276

Contextual Info: 2SK2315 Silicon N-Channel MOS FET ADE-208-1354 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source. Suitable for DC-DC converter, motor drive, power switch, solenoid drive

2SK3235

Abstract: 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053
Contextual Info: HAT2038R/HAT2038RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-666C Z 4th. Edition Feb. 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting

lt 6229

Abstract: Yamaha AX 496 pin diagram of lt 542 YTD410 YM7405 YTD418 YTD423 YTD428 TRTEPC9.8 YAMAHA RA 200
Contextual Info: YTD428 APPLICATION MANUAL IDSU ISDN DSU for Terminal Equipment YTD428 APPLICATION MANUAL CATALOG No.: LSI-6TD428A3 2002.12 IMPORTANT NOTICE 1. Yamaha reserves the right to make changes to its Products and to this document without notice. The information contained in this document has been carefully checked

2sk 4207

Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9

7054F

Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
Contextual Info: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver

varistor vrt

Abstract: YTD410 YM7405 YTD418 YTD423 YTD428 TDK TRANSFORMER CATALOG TRTE
Contextual Info: YTD428 APPLICATION MANUAL IDSU ISDN DSU for Terminal Equipment YTD428 APPLICATION MANUAL CATALOG No.: LSI-6TD428A32 2005.1 CONTENTS -1- Contents 1. INTRODUCTION . 2 1.1 Features . 3

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

2SK975 equivalent

Abstract: k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44
Contextual Info: Section 1 Lineup by Application 1.1 Power Supply Use 1 R ecom m ended products in each pow er range Recommended Products in Each Power Range Type power supply Voltage Up to 1 0 W 10 W tO 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 200 W 100 V to 132 V AC

2SK2315

Abstract: 2SK2315TYTL-E 2SK2315TYTR-E
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

2SK2225

Abstract: 2sj150 2sk1058 2SK215 equivalent 2sk135 application note 2SK975 equivalent 2SK2416 2sk135 audio application 2SK135 audio amplifier 2SK2225 equivalent
Contextual Info: CONTENTS • Index. 4 ■ General Information.

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

transistor 2sk

Abstract: transistor sp-10 4ac14 2SK157 transistor 2sk 70 2sj318 transistor 2sk 12 2SK2851 4AC14 TRANSISTOR 2sK 135 K 2796
Contextual Info: POWER TRANSISTOR •General switching Darlington transistor Characteristics tire 7.5 1 k - 20 k 6.0 1 k - 20 k 6.0 1 k - 20 k 8.0 1 k - 20 k 9.0 150011.5 500l_ 16.0 1 k -2 0 k 5.0 1 k -2 0 k 4.0 1 k -2 0 k 3.1 1 k -2 0 k 4.0 1 k -2 0 k 3.0 15006.0 1 k - 20 k

lvc16244

Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
Contextual Info: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List

hitachi j50

Abstract: 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9