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    2SK3210STL Search Results

    2SK3210STL Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SK3210STL
    		Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF 153.67KB 9
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    2SK3210STL Price and Stock

    Renesas Electronics Corporation

    Renesas Electronics Corporation 2SK3210STL-E

    Transistor MOSFET N-CH 150V 30A 4-Pin SC-83 Cut Tape - Tape and Reel (Alt: 2SK3210STL-E)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 2SK3210STL-E Reel 111 Weeks 1,000
    • 1 $10.43
    • 10 $10.43
    • 100 $10.43
    • 1000 $10.43
    • 10000 $10.43
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    2SK3210STL Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SK3210

    Abstract: 2SK3210L 2SK3210STL
    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		d-900 Unit2607 2SK3210 2SK3210L 2SK3210STL PDF

    2SK3210

    Abstract: 2SK3210L 2SK3210STL
    Contextual Info: 2SK3210 L , 2SK3210(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G0414-0300 (Previous ADE-208-760A (Z) Rev.3.00 Sep. 30, 2004 Features • Low on-resistance RDS = 40 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source


    Original     		2SK3210 REJ03G0414-0300 ADE-208-760A Av-900 Unit2607 2SK3210L 2SK3210STL PDF

    Contextual Info: Preliminary Datasheet 2SK3210 L , 2SK3210(S) R07DS0409EJ0400 (Previous: REJ03G0414-0300) Rev.4.00 May 16, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 40 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source


    Original     		2SK3210 R07DS0409EJ0400 REJ03G0414-0300) PRSS0004AE-A PRSS0004AE-B Note14 PDF

    Contextual Info: Preliminary Datasheet 2SK3210 L , 2SK3210(S) R07DS0409EJ0400 (Previous: REJ03G0414-0300) Rev.4.00 May 16, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 40 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source


    Original     		2SK3210 R07DS0409EJ0400 REJ03G0414-0300) PRSS0004AE-A PRSS0004AE-B PDF