2SK345 Search Results

2SJ102

Abstract: K346 K3465 2SK345 2SJ101 2SK346 K346 fet
Contextual Info: H IT A C H I ! /-co PT O E L E C T R O N I C S } 7 3 D — -^ W 2 T T 5 ^ m rra U H I / OP'IO LLhCTRUNlUü; e 73C J ^ H L E D S m 10017 a D 2SK345,2SK346 S ILIC O N N -C H A N N E L M O S FET HIGH SPEED POWER SW ITCHING. LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SJ101, 2SJ102

2SK3453

Contextual Info: 2SK3453 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSIV 2SK3453 ○ スイッチングレギュレータ用 • 単位: mm : RDS (ON) = 0.72 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。: |Yfs| = 7.0 S (標準)

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3454 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3454 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, PART NUMBER

2SK3455B

Abstract: 2SK3455B-S17
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3455B SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION PART NUMBER The 2SK3455B is N-channel MOS FET device that features a 2SK3455B-S17-AY low gate charge and excellent switching characteristics, and

2SK3453

Contextual Info: 2SK3453 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3453 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.72 Ω (typ.) · High forward transfer admittance: |Yfs| = 7.0 S (typ.) · Low leakage current: IDSS = 100 µA (max) (VDS = 700 V)

K3115

Abstract: 2SJ102 2SK345 2sk346 ir3a 2SJ101 Hitachi Scans-001 2sk346 hitachi
Contextual Info: H IT A C H I /-co PT O E L E C T R O N I C S } 7 3 ! — - ^ W 2 T T 5 ^ m r r a U H I / OP'IOLLhCTRUNlUü; _ D e J ^ H L E D S m 73C 10017 a D 2SK345,2SK346 S ILIC O N N -C H A N N E L M O S FET HIGH SPEED POWER SW ITCHING. LOW FREQUENCY POWER AMPLIFIER

D1475

Abstract: 2SK3454
Contextual Info: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SK3454 N チャネル パワーMOS FET スイッチング用 2SK3454 は，N チャネル縦型 MOS FET でオン抵抗が低く，スイッチング特性が優れており，DC/DC コンバータ回路な

NC marking transistor

Abstract: 2SK3453 K3453
Contextual Info: 2SK3453 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3453 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.72 Ω (typ.) • High forward transfer admittance: |Yfs| = 7.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 700 V)

2SK3457

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3457 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3457 is N-channel DMOS FET device that features a PART NUMBER PACKAGE 2SK3457 Isolated TO-220 low gate charge and excellent switching characteristics,

2SK3453

Abstract: K3453
Contextual Info: 2SK3453 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3453 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.72 Ω (typ.) • High forward transfer admittance: |Yfs| = 7.0 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 700 V)

2SK3450-01

Abstract: 2SK3450-01 equivalent
Contextual Info: 2SK3450-01 Super FAP-G Series FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

th 2167

Abstract: 2SK3451-01MR 2SK3451 mosfet 12A 600V 2SK3451-01MR equivalent mosfet 600V 12A N-CHANNEL
Contextual Info: 2SK3451-01MR Super FAP-G Series FUJI POWER MOSFET200303 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3457 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3457 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics,

th 2167

Contextual Info: 2SK3450-01 Super FAP-G Series FUJI POWER MOSFET 200303 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3456 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3456 is N-channel DMOS FET device that features PART NUMBER PACKAGE 2SK3456 TO-220AB 2SK3456-S TO-262

2SK3453

Contextual Info: 2SK3453 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3453 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.72 Ω (typ.) • High forward transfer admittance: |Yfs| = 7.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 700 V)

2SK3458-ZK

Abstract: 2SK3458 2SK3458-S MP-25 220AB
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3458 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3458 is N-channel DMOS FET device that features a PART NUMBER PACKAGE 2SK3458 TO-220AB 2SK3458-S TO-262 2SK3458-ZK TO-263 low gate charge and excellent switching characteristics,

2SK3455

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3455 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3455 is N-channel DMOS FET device that PART NUMBER PACKAGE 2SK3455 Isolated TO-220 features a low gate charge and excellent switching characteristics, designed for high voltage applications

2SK3455

Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3455 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3455 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics,

K3453

Abstract: 2SK345
Contextual Info: 2SK3453 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3453 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.72 Ω (typ.) • High forward transfer admittance: |Yfs| = 7.0 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 700 V)

2SK3451

Abstract: 2SK3451-01MR
Contextual Info: 2SK3451-01MR Super FAP-G Series FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

th 2167

Abstract: 2sk3450 2SK3450-01
Contextual Info: 2SK3450-01 Super FAP-G Series FUJI POWER MOSFET 200303 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

2sk3455

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3455 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3455 is N-channel DMOS FET device that PART NUMBER PACKAGE 2SK3455 Isolated TO-220 features a low gate charge and excellent switching characteristics, designed for high voltage applications

2SK3458

Abstract: 2SK3458-S 2SK3458-ZJ MP-25
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3458 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3458 is N-channel DMOS FET device that features PART NUMBER PACKAGE 2SK3458 TO-220AB 2SK3458-S TO-262