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    2SK371 Search Results

    2SK371 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SK3715-AZ Renesas Electronics Corporation Nch Single Power Mosfet 60V 75A 6.0Mohm Mp-45F/To-220 Visit Renesas Electronics Corporation
    2SK3714(0)-AZ Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    2SK3712-AZ Renesas Electronics Corporation Switching N-Channel Power Mosfet, MP-3, /Bag Visit Renesas Electronics Corporation
    2SK3714(0)-S12-AZ Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    2SK3716(0)-Z-E2-AZ Renesas Electronics Corporation Nch Single Power Mosfet 40V 60A 6.5Mohm Mp-3Z/To-252 Visit Renesas Electronics Corporation
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    2SK371 Price and Stock

    Rochester Electronics LLC 2SK3718-T1-A

    RF MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK3718-T1-A Bulk 171,000 1,803
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    Rochester Electronics LLC 2SK3714-S12-AZ

    2SK3714-S12-AZ - SWITCHING N-CHA
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    DigiKey 2SK3714-S12-AZ Bulk 106,069 150
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    Rochester Electronics LLC 2SK3712-Z-E1-AZ

    MOSFET N-CH 250V 9A TO252
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    DigiKey 2SK3712-Z-E1-AZ Bulk 22,000 243
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    Rochester Electronics LLC 2SK3714(0)-S12-AZ

    2SK3714 - SWITCHING N-CHANNEL
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    DigiKey 2SK3714(0)-S12-AZ Bulk 7,805 128
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    Rochester Electronics LLC 2SK3712-AZ

    SMALL SIGNAL N-CHANNEL MOSFET
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    DigiKey 2SK3712-AZ Bulk 1,092 93
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    Find more 2SK371 price and stock on Findchips.com

    2SK371 Datasheets (38)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK371 Toshiba N-Channel MOSFET Original PDF
    2SK371 Unknown FET Data Book Scan PDF
    2SK371 Toshiba FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE Scan PDF
    2SK371 Toshiba Silicon N channel field effect transistor for low noise audio amplifier applications. Suitable for use as first stage for equalizer and MC head amplifiers Scan PDF
    2SK371 Toshiba TO-92 Mini Package Transistors / Junction FETs Scan PDF
    2SK3710 Sanken Electric MOSFET Original PDF
    2SK3710 Sanken Electric Devices for Automotive Application Original PDF
    2SK3710 Sanken Electric FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V TO220S Original PDF
    2SK3711 Sanken Electric 60V N -ch MOSFET Original PDF
    2SK3711 Sanken Electric Devices for Automotive Application Original PDF
    2SK3712 Kexin N-Channel MOSFET Original PDF
    2SK3712 NEC N-ch power MOS FET (switching element) Original PDF
    2SK3712 NEC Switching N-Channel Power MOS FET Original PDF
    2SK3712 TY Semiconductor N-Channel MOSFET - TO-252 Original PDF
    2SK3712-Z NEC SWITCHING N-CHANNEL POWER MOSFET Original PDF
    2SK3712-Z NEC Switching N-Channel Power MOS FET Original PDF
    2SK3712-Z-E1-AZ Renesas Electronics MOSFET N-CH 250V MP-3Z/TO-252 Original PDF
    2SK3713 Kexin N-Channel MOSFET Original PDF
    2SK3713 NEC POWER MOS FET Original PDF
    2SK3713 TY Semiconductor N-Channel MOSFET - TO-263 Original PDF

    2SK371 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mosfet 45a 200v

    Abstract: 2SK3712
    Text: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3712 TO-252 Features High voltage: VDSS = 250 V Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Low Ciss: Ciss = 450 pF TYP. VDS = 10 V, ID = 0 A Built-in gate protection diode 2.3 +0.1 0.60-0.1 0.127 max +0.15 5.55-0.15


    Original     		PDF 2SK3712 O-252 mosfet 45a 200v 2SK3712

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC MOSFET SMD Type Product specification 2SK3716 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Low Ciss: Ciss = 2700 pF TYP. Built-in gate protection diode 2.3 +0.1 0.60-0.1 +0.15 5.55-0.15 0.127


    Original     		PDF 2SK3716 O-252

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SK3712 TO-252 Features High voltage: VDSS = 250 V Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Low Ciss: Ciss = 450 pF TYP. VDS = 10 V, ID = 0 A Built-in gate protection diode 2.3 +0.1 0.60-0.1 0.127 max +0.15 5.55-0.15


    Original     		PDF 2SK3712 O-252

    2SK3719

    Abstract: TRANSISTOR BJ 026 drain
    Text: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3719 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM PACKAGE DRAWING Unit: mm DESCRIPTION +0.1 0.3 ±0.05 0.13 –0.05 • Compact package • High forward transfer admittance


    Original     		PDF 2SK3719 2SK3719 TRANSISTOR BJ 026 drain

    Untitled

    Abstract: No abstract text available
    Text: 2SK3710 N-channel MOSFET Features and Benefits •      Equivalent Circuit Package RDSON: 6mΩ max. @25℃ VDSS: 60V Built-in Protection zener Di between G-S. Avalanche energy capability guaranteed Trench MOSFET structure. High Reliability


    Original     		PDF 2SK3710

    2SK3716

    Abstract: 2SK3716-Z D1653
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3716 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3716 is N-channel MOS Field Effect Transistor PART NUMBER designed for high current switching applications. 2SK3716 2SK3716-Z PACKAGE TO-251 MP-3


    Original     		PDF 2SK3716 2SK3716 2SK3716-Z O-251 O-252 O-251) 2SK3716-Z D1653

    2SK3717

    Abstract: SC-72 d1678
    Text: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3717 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM PACKAGE DRAWING Unit: mm FEATURES 1 • Compact package 2.0 ±0.2 3.0 ±0.2 4.0 ±0.2 The 2SK3717 is suitable for converter of ECM.


    Original     		PDF 2SK3717 2SK3717 SC-72 SC-72 d1678

    2sk3715

    Abstract: D1637
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3715 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3715 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3715 Isolated TO-220


    Original     		PDF 2SK3715 2SK3715 O-220 O-220) 30ems, D1637

    smd transistor QG

    Abstract: smd transistor 26 2SK3713
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3713 +0.1 1.27-0.1 TO-263 Features Super high VGS off : VGS(off) = 3.8 to 5.8 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low QG: QG = 25 nC TYP. 5.60 +0.2 15.25-0.2 +0.2 8.7-0.2 Low Crss: Crss = 6.5 pF TYP. 0.1max


    Original     		PDF 2SK3713 O-263 smd transistor QG smd transistor 26 2SK3713

    D1637

    Abstract: 2SK3712 2SK3712-Z
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3712 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3712 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter.


    Original     		PDF 2SK3712 2SK3712 O-251 2SK3712-Z O-252 O-251/TO-252 O-251) D1637 2SK3712-Z

    2SK3716

    Abstract: 2SK3716-Z D1653
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3716 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3716 is N-channel MOS Field Effect Transistor PART NUMBER designed for high current switching applications. 2SK3716 2SK3716-Z PACKAGE TO-251 MP-3


    Original     		PDF 2SK3716 2SK3716 2SK3716-Z O-251 O-252 O-251) 2SK3716-Z D1653

    Untitled

    Abstract: No abstract text available
    Text: 60V N -ch MOSFET 2SK3711 December 2005 Package—TO3P Features • Low on-resistance • Built-in gate protection diode • Avalanche energy capability guaranteed Applications • Electric power steering • High current switching Equivalent circuit D 2


    Original     		PDF 2SK3711 T02-002EA-051124

    marking AE

    Abstract: 2SK3718 SC-89 NEC JAPAN
    Text: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3718 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM PACKAGE DRAWING Unit: mm DESCRIPTION +0.1 0.3 ±0.05 0.1–0.05 0.4 The 2SK3718 is suitable for converter of ECM. • Compact package


    Original     		PDF 2SK3718 2SK3718 SC-89 marking AE SC-89 NEC JAPAN

    2SK371

    Abstract: No abstract text available
    Text: 2SK371 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK371 For Low Noise Audio Amplifier Applications • Unit: mm Suitable for use as first stage for equalizer and MC head amplifiers. • High |Yfs|: |Yfs| = 40 mS typ. (VDS = 10 V, VGS = 0, IDSS = 5 mA)


    Original     		PDF 2SK371 2SK371

    2SK3714

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3714 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3714 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3714 Isolated TO-220


    Original     		PDF 2SK3714 2SK3714 O-220 O-220) 16ems,

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SK3713 +0.1 1.27-0.1 TO-263 Features Super high VGS off : VGS(off) = 3.8 to 5.8 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low QG: QG = 25 nC TYP. 5.60 +0.2 15.25-0.2 +0.2 8.7-0.2 Low Crss: Crss = 6.5 pF TYP. 0.1max


    Original     		PDF 2SK3713 O-263

    sk371

    Abstract: 2SK3711
    Text: 60V N -ch MOSFET 2SK3711 December 2005 •Package—TO3P ■Features • Low on-resistance • Built-in gate protection diode • Avalanche energy capability guaranteed ■Applications • Electric power steering • High current switching ■Equivalent circuit


    Original     		PDF 2SK3711 PW100s, T02-002EA-051124 sk371 2SK3711

    2SK3711

    Abstract: SK3711 051124 sanken power transistor B105 CF35 MT100 sanken MOSFET DSA0016517 N CH MOSFET
    Text: 60V N -ch MOSFET 2SK3711 December 2005 •Package—TO3P ■Features • Low on-resistance • Built-in gate protection diode • Avalanche energy capability guaranteed ■Applications • Electric power steering • High current switching ■Equivalent circuit


    Original     		PDF 2SK3711 T02-002EA-051124 2SK3711 SK3711 051124 sanken power transistor B105 CF35 MT100 sanken MOSFET DSA0016517 N CH MOSFET

    2sk170 FET

    Abstract: Junction-FET fet to92 2SK364 2SK118 2sk117 2SJ74 2sk879 2sj105 2SJ14
    Text: Part Number 2SK246 Nch 2SJ103 Pch 2SK117 Nch 2SK362 Nch 2SK363 Nch 2SK364 Nch 2SJ104 Pch 2SK30ATM 2SK170 Nch 2SJ74 Pch 2SK369 Nch 2SK373 Nch 2SK330 Nch 2SJ105 Pch 2SK184 Nch 2SK365 Nch 2SK372 Nch 2SK366 Nch 2SJ107 Pch 2SK118 Nch 2SK370 Nch 2SJ108 Pch 2SK371 Nch


    Original     		PDF 2SK246 2SJ103 2SK117 2SK362 2SK363 2SK364 2SJ104 2SK30ATM 2SK170 2SJ74 2sk170 FET Junction-FET fet to92 2SK118 2SJ74 2sk879 2sj105 2SJ14

    d1658

    Abstract: 2SK3713 2SK3713-SK MP-25
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3713 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3713 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3713-SK TO-262 designed for high voltage and high speed switching


    Original     		PDF 2SK3713 2SK3713-SK 2SK3713 O-262 d1658 2SK3713-SK MP-25

    D1637

    Abstract: 2SK3712 2SK3712-Z
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3712 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3712 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter.


    Original     		PDF 2SK3712 2SK3712 O-251 2SK3712-Z O-252 O-251/TO-252 O-251) D1637 2SK3712-Z

    2SK371

    Abstract: No abstract text available
    Text: TO S H IB A 2SK371 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SKB71 FOR LO W NOISE AUDIO AM PLIFIER APPLICATIONS U nit in mm Suitable for Use as First Stage for Equalizer and MC Head Amplifiers. High |Yfe| : |Yfs| = 4 0 m S Typ. (VDS = 10V,


    OCR Scan     		PDF 2SK371 2SKB71

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SK371 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK371 Unit in mm FOR LO W NOISE AUDIO AM PLIFIER APPLICATIONS Suitable for Use as First Stage for Equalizer and MC Head Amplifiers. High |Yfs| : |Yfs| = 40mS Typ. (VDS=10V, VGS = 0, IDSS = 5mA)


    OCR Scan     		PDF 2SK371 55MAX.

    2SK371

    Abstract: 2SKB71
    Text: TO S H IB A 2SK371 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SKB71 FOR LO W NOISE AUDIO AM PLIFIER APPLICATIONS Unit in mm Suitable for Use as First Stage for Equalizer and MC Head I 4.2 M AX. Amplifiers. High |Yfe| : |Yfs|= 4 0 m S Typ. (VDS = 10V, V G S = 0, I D S S = 5mA)


    OCR Scan     		PDF 2SK371 2SKB71 2SK371 2SKB71