30 YF Search Results

C495 transistor

Abstract: BF194 2N4996 BF194 equivalent BF195 bf357 BF597 BF195 equivalent BF594 transistor c495
Contextual Info: Silect High Frequency Transistors Maximum Ratings Device Type Case outline B V PTOT in brackets CBO ic S j o < hFE Ic BF594 (9) V V mA mW 30 20 30 250 V 1 10 BF595 (9) 30 20 30 250 35 BF597 (9) 40 25 30 360 38 2N4996 (2) T1S02A (2) 30 30 18 50 12 30 250

2N1377

Abstract: 2N1414 2N1373 2n1614 Germanium power 2N1925 2N508 2N526 2N1309
Contextual Info: GERMANIUM PNPSMALL SIGNAL TRANSISTORS 1im hFC Min Max ycBo V Max YFWO V Max Vc, V Max 2N465 2N 466 45 35 12 12 30 20 20 20 15 15 27-45 56-90 1 1 2N467 2N508 2N 508A 2N 522 2N 524 35 20 30 15 30 12 10 10 10 15 15 18 25 8 30 20 20 25 15 30 15 6 7 2 10 112-180

29rd120

Abstract: 21RC60 SF2500Ex21 39RC60 21RC80 11RC60 29RD80 29rd60 21RC100 SF1500EX24
Contextual Info: -27 n Ä V 1.75 1. 55 2. 40 1. 55 1. 55 1. 55 1. 55 1. 82 2. 50 1. 50 1. 50 1. 50 1. 50 2. 30 2. 30 2. 30 2. 30 2. 30 2.30 2. 30 2. 30 2. 20 2.20 2. 20 2. 20 2.20 2. 20 2. 20 2. 20 1. 92 1. 92 1. 92 1. 92 1. 92 1. 92 2. 10 2. 10 2.10 2. 10 2. 10 dv/dt (min)

igss

Abstract: 2N2500 2N3332 DSASW0036853
Contextual Info: *BVDgo Type Case or Geometry Number Style BVgss Min V TO2N2500 FP5.3 *20 5 TO2N3332 FP5.3 *20 72 TOUC400 FP5.3 30 72 TOUC410 FP5.3 30 72 TOUC420 FP5.3 30 72 Vgs Vgs Ciss Igss Idss Idss R(on) (off) (off) Yfs Min Yfs Max Yos Max Max Max Min Max Max Min Max

BF194 equivalent

Abstract: BC516 equivalent BF195 equivalent BF195 BF194 BF197 2N4996 transistor bf194 2n918 plastic BF594
Contextual Info: Silect High Frequency Transistors Sj o < Maximum Ratings Device Type hFE Case outline B V PTOT Ic VCE in brackets CBO ic V V mA mW min. max. mA V 1 10 BF594 (9) 30 20 30 250 65 220 BF595 (9) 30 20 30 250 35 BF597 (9) 40 25 30 360 38 2N4996 (2) T1S02A (2)

BF357

Abstract: BF195 BF594 BF197 BF194 BF194 equivalent BF597 2N4996 BF195 equivalent BC516 equivalent
Contextual Info: Silect High Frequency Transistors TT MHz Sj o < Maximum Ratings Device Type hFE Case outline B V PTOT Ic VCE in brackets CBO ic V V mA mW min. max. mA V 1 10 BF594 (9) 30 20 30 250 65 220 Case Outlines BF595 (9) 30 20 30 250 35 BF597 (9) 40 25 30 360 38

2N5458 equivalent

Abstract: 2N4303 mpf105 equivalent 2N4302 mpf103 2N5457 equivalent MPF102 equivalent transistor 2N4303 equivalent equivalent 2N5459 2N4304 equivalent
Contextual Info: Sem iconductors M icro-Electronics F.E.T.'s/P.U.T.'s/Light Detectors General Purpose Junction F.E.T.s REFERENCE T A B L E Code Min. B V qss Volts MEF101 MEF102 MEF103 MEF104 2N4302 2N4303 2N4304. 30 40 40 50 30 30 30 Volts Max. C 1S1 pF Max. 1kHz NF dB 10

CTG-34S

Abstract: CTG-32S CTG-33S C120H04Q C120H05Q ctg23s CTG-31S CTG-22S 273B C60P40FE
Contextual Info: - * » £ C60P40FE C80H03Q C80H04Q C80H05Q C80H06Q tt £ Pr s m Vr s m kf (V) I # £ Ì H Vr Vj Io (V) (V) (V) (A) V 440 35 45 55 65 400 30 40 50 60 60 80 80 80 80 35 45 55 65 35 30 40 50 60 30 120 120 120 120 120 45 55 65 35 35 40 50 60 30 30 120 120

s11s

Abstract: marking GFG
Contextual Info: ON Semiconductort JFET VHF/UHF Amplifier Transistor MMBF4416LT1 N–Channel ON Semiconductor Preferred Device MAXIMUM RATINGS 3 Rating Symbol Value Unit Drain–Source Voltage VDS 30 Vdc Drain–Gate Voltage VDG 30 Vdc Gate–Source Voltage VGS 30 Vdc IG 10

Contextual Info: MPF4392, MPF4393 Preferred Devices JFET Switching Transistors N−Channel − Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain −Source Voltage VDS 30 Vdc Drain −Gate Voltage VDG 30 Vdc Gate−Source Voltage VGS 30 Vdc Forward Gate Current IG f

Contextual Info: ON Semiconductort JFET VHF/UHF Amplifier Transistor MMBF4416LT1 N−Channel ON Semiconductor Preferred Device MAXIMUM RATINGS 3 Rating Symbol Value Unit Drain−Source Voltage VDS 30 Vdc Drain−Gate Voltage VDG 30 Vdc Gate−Source Voltage VGS 30 Vdc IG 10

MPF4392

Abstract: MPF4393
Contextual Info: MPF4392, MPF4393 Preferred Devices JFET Switching Transistors N−Channel − Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain −Source Voltage VDS 30 Vdc Drain −Gate Voltage VDG 30 Vdc Gate−Source Voltage VGS 30 Vdc Forward Gate Current IG f

MMBF4416LT1

Contextual Info: ON Semiconductort JFET VHF/UHF Amplifier Transistor MMBF4416LT1 N–Channel ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 30 Vdc Drain–Gate Voltage VDG 30 Vdc Gate–Source Voltage VGS 30 Vdc IG 10

MMBF4416LT1

Contextual Info: ON Semiconductort JFET VHF/UHF Amplifier Transistor MMBF4416LT1 N–Channel ON Semiconductor Preferred Device MAXIMUM RATINGS 3 Rating Symbol Value Unit Drain–Source Voltage VDS 30 Vdc Drain–Gate Voltage VDG 30 Vdc Gate–Source Voltage VGS 30 Vdc IG 10

FMM5703YC

Abstract: JESD22-A114-C J-STD-020B block diagram of electric cooker 455A
Contextual Info: FMM5703YC K Band Low Noise Amplifier MMIC FEATURES •Low Noise Figure : NF = 2.5dB Typ. @ f=30 GHz •High Associated Gain : Gas = 18dB ( Typ.) @ f=30 GHz •Broad Band : 24 - 30 GHz •High Output Power : P1dB = 6.0dBm ( Typ. ) @f=30GHz •Impedance Matched Zin/Zout = 50ohm

KS803

Abstract: 12 sot-23 KS805 23 SOT23 KS3909 DSASW0036853 ks851
Contextual Info: *BVDgo or TYPE Case Geometry BFgss NUMBER Style Min V SOTKS2386 FP5.3 *20 23 SOTKS2386A FP5.3 *20 23 SOTKS2497 FP5.3 20 23 SOTKS2498 FP5.3 20 23 SOTKS2499 FP5.3 20 23 SOTKS2500 FP5.3 20 23 SOTKS2606 FP22.2 30 23 SOTKS2607 FP22.2 30 23 SOTKS2608 FP22.2 30

2n2386

Abstract: 2N2497 2N2498 2N2499 2N3380 FP22 to92 2N3330 2N3331 2N3382 2N3384
Contextual Info: *BVDgo or Type Case Geometry BFgss Number Style Min V TO2N2386 FP5.3 *20 5 TO2N2386A FP5.3 *20 5 TO2N2497 FP5.3 20 5 TO2N2498 FP5.3 20 5 TO2N2499 FP5.3 20 5 TO2N2500 FP5.3 20 5 TO2N2606 FP22.2 30 18 TO2N2607 FP22.2 30 18 TO2N2608 FP22.2 30 18 TO2N2609 FP22.2

RJK03P7DPA

Contextual Info: Preliminary Datasheet RJK03P7DPA MOS1 30 V, 15 A, 9.4 mΩ max. MOS2 30 V, 30 A, 5.3 mΩ max. Built in SBD Dual N-channel Power MOS FET High Speed Power Switching R07DS0906EJ0110 Rev.1.10 Nov 01, 2012 Features •     Low on-resistance Capable of 4.5 V gate drive

PT-1-24-25F-109

Abstract: 12 19 221 351 PT-1-24-07F-109 PT-1-24-12F-109
Contextual Info: A A TABLE 1 No OF POS ROW SPEC COPLANARITY -20 -30 -20 & -30 -40 -50 -50 -05 -05 *-08, *-10 -05, *-08, *-10 -05 *-08, *-10 .004[.10] .006[.15] .006[.15] .008[.20] .008[.20] .010[.25] TABLE 2 STACK HEIGHT "A" REF "B" REF "C" "D" MATED HEIGHT w / YFS -07 -09

sot 23 tr2

Abstract: UM6K1 2SK3018 SOT-23 Dual N RK7002
Contextual Info: SINGLE & DUAL N CHANNEL SMALL SIGNAL MOSFETS SINGLE N CHANNEL MOSFETS TA = 25˚C Absolute max ratings VDSS ID PD Part No Pkg V mA mW 2SK3019 SC-75A 30 100 150 2SK3018 SC-70 30 100 200 2SK2731 SC-59 30 200 200 RK7002 SOT-23 60 115 225 All parts have gate protection diodes

Contextual Info: TABLE 1 No OF POS ROW SPEC COPLANARITY -20 -30 -20 & -30 -40 -50 -50 -05 -05 -08, -10 -05, -08, -10 -05 -08, -10 .004[.10] .006[.15] .006[.15] .008[.20] .008[.20] .010[.25] TABLE 2 STACK HEIGHT "A" REF "B" REF "C" "D" MATED HEIGHT w / YFS -07 -09 -12 -19 -25

Contextual Info: TABLE 1 No OF POS ROW SPEC COPLANARITY -20 -30 -20 & -30 -40 -50 -50 -05 -05 -08, -10 -05, -08, -10 -05 -08, -10 .004[.10] .006[.15] .006[.15] .008[.20] .008[.20] .010[.25] TABLE 2 STACK HEIGHT "A" REF "B" REF "C" "D" MATED HEIGHT w / YFS -07 -09 -12 -19 -25

YFTHS-XX-08-X

Contextual Info: TABLE 1 No OF POS ROW SPEC COPLANARITY -20 -30 -20 & -30 -40 -50 -50 -05 -05 -08, -10 -05, -08, -10 -05 -08, -10 .004[.10] .006[.15] .006[.15] .008[.20] .008[.20] .010[.25] TABLE 2 STACK HEIGHT "A" REF "B" REF "C" "D" MATED HEIGHT w / YFS -07 -09 -12 -19 -25

Contextual Info: TABLE 1 No OF POS ROW SPEC COPLANARITY -20 -30 -20 & -30 -40 -50 -50 -05 -05 -08, -10 -05, -08, -10 -05 -08, -10 .004[.10] .006[.15] .006[.15] .008[.20] .008[.20] .010[.25] TABLE 2 STACK HEIGHT "A" REF "B" REF "C" "D" MATED HEIGHT w / YFS -07 -09 -12 -19 -25