2N2497 Search Results

2n2500

Abstract: 2N2498 2n2497 2n2499
Contextual Info: TYPES 2N2497 THRU 2N2500 P CHANNEL SILICON JUNCTION FIELO-EFFECT TRANSISTORS B U L L E T I N N O . D L -S 683519. M A Y 196 3 - R E V IS E D M AY 1968 FOR SMALL-SIGNAL, LOW-NOISE APPLICATIONS • Guaranteed 10 cps Noise Figure 2N2500

Contextual Info: 2N2497 Transistors P-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)20 I(D) Max. (A) I(G) Max. (A)10m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)200þ I(GSS) Max. (A)10n @V(GS) (V) (Test Condition)10 V(GS)off Min. (V) I(DSS) Max. (A)

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2N2458

Abstract: 2N2537 texas 2N2551 2N2457 2N2429 SGS-ATES c426 2N2425 2n2398 2N2431 BF253
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2SC562 2N479 2N479A BF253 KT215E1 2N2693 KSC2715 2SC2669 2SC2715 2SC380 2S731 2S731 2S731 ~~g~~~~ 25 30 35 40 45 50 2SC941 2SC941 BFR36 BFR36 2N2309 TP4386

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

G50433

Contextual Info: ALL E GR O MICROSYSTEMS INC 8 5 1 4 0 1 9 S P RA GU E. =13 ]> • G50433Û G G D 3 b l 7 1 ■ AL6R S E M I C O N D S / ICS 93D 03617 D T - zj? - z » s METAL-CASE JUNCTION FIELD-EFFECT TRA N SIST O R S P-Channel JFETs General-Purpose Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C

2N2458

Abstract: TRF648 sgs-ates transistors FBase-F Package 2N2425 2N2455 westcode diode 2n2534 2n2474 2N2431
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 40 45 50 55 Ie Max (A) Westcode Westcode MarconiElec MarconiElec MarconiElec MarconiElec MarconiElec MarconiElec MarconiElec MarconiElec Marcomclec MarconiElec MarconiElec MarconiElec MarconiElec

TIS34

Abstract: tis58 TIS25 TIS59 2n2386 2N3328 TIS42 2N2499 2N3820 silec
Contextual Info: Field Effect Transistors No. £^ o 1 ! C S o w U “ S ilic o n P -C h a n n e l F ie ld Effect S ilic o n N -C h a n n el F ield Effect S ilic o n N -C h a n n el D ual M atched Field Effect Germ anium P Channel Field Effect V DG V !e mA p p p p p p 20 20

F245B

Abstract: BF256 2N3820 BC264 U1898E BFS21A MPF105 vergleichsliste BF320 TIS69
Contextual Info: FACHHÄNDLER INFORMATION DISKRETE PRODUKTE FETs Warum FET-Vorzugsprodukte? Weil: • 20% unserer Produkte mehr als 80% aller Anforderungen erfüllen. ■ wir unsere Produkte mittels Computer analysiert haben nach: größtem Bedarf notwendigen Parametern niedrigsten Kosten

2N3330

Abstract: 2N2498 2N3332 2N2500 2N3329 2N3331 JANTX 2H332 2N2497 2N3330 JANTX 2K333
Contextual Info: I INCH-POUND ! MIL-S-19 500/37 8B 21 June 1990 SUPERSEDING-Mil-S-19500/378A 18 Marrh 1968 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPES ZHZ497 THROUGH ZHZ50Q, 2N3329 THROUGH 2N3332, JANTX This s p ecifica tio n is approved for use by a ll Depart­

930 dtl

Abstract: la 4508 ic schematic diagram sn524a eel 19 2005 transformer sn15846n J 5027-R sn15846 CREATIVE 5507 transistor kc 2026 Jacinto
Contextual Info: Notes on This Fi rst Edition This first edition of TI's Integrated Circuits catalog contains currently published data sheets covering SOLID CIRCUIT semiconductor networks. As new data sheets are published, they will be distributed for insertion in the appropriate sections of this basic Tightleaf®

IN5314

Abstract: IN5309 IN5286 2N5163 2NB906 IN5313 U1897E 2N3456 UC4250 in5297
Contextual Info: 95D 02926 8368602 SOLITRON DEVICES INC SOLITRON DEVICES INC "ts f - z- f de I " a a tf tto a ooos^ab ~ Devices, Inc L O W P O W E R F IE L D E F F E C T T R A N S I S T O R S Type N um ber C ase Style TO- Avol Min V/mV lb Max (nA) Ios. Max (nA) Vos Max (mV)

2NB906

Abstract: IN5313 2NB90 IN5286 IN5296 solitrondevices IN5302 in5287 IN5306 2N5902 TO-92
Contextual Info: 8 3 6 8 6 0 2 SO L ITRON D E V I C E S INC T - 2- 95D 0 2 9 2 6 S0LITR0N DEVICES INC D F Jfl3 b ö t,G 2 2.jr OOOSTEb M o [ M i r ©ÄTTÄ[L ( L O W P O W E R FIELD EFFECT T R A N S IS T O R S Devices, Inc © [P U C W O O lM tL Type Number Case Style

Contextual Info: S P R A G U E / S E MI C Ô ND 8 5 1 4 0 1 9 SPR A G U E. GROUP =13 D • ÔS1 3ÔS G SEM IC O N D S/IC S DDQ3 L 17 T 93D 0 3 6 1 7 J ■ 7 I . ? 9 , 7 C METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS_ P-Channel JFETs General-Purpose Device Types

siliconix fet

Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
Contextual Info: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility

TIS69 equivalent

Abstract: 2N3575 Germanium itt TIS59 TIS58 2N2386 TIS26
Contextual Info: IN T R O D U C T IO N This booklet is designed to simplify your selection of field effect transistors, which best meet your requirement. It is a comprehensive pocket size reference to your widest choice of field effect transistors. This broad selection is your best assurance of pin-pomting the

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

2N3303

Abstract: T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175
Contextual Info: Semiconductor Components Data Book 4 Transistors C o p y rig h t 1971 by T exas In s tru m e n ts L im ited . A ll R ig h ts R eserv ed . P rin te d in th e U n ite d K ingdom . T his b o o k , o r p arts th e re o f, m ay n o t be rep ro d u ce d in any

TIS43

Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
Contextual Info: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.

2SJ111

Abstract: 2SJ109BL 2SJ109GR 2N4882 2N3333 2N3112 2N5033 2SJ109V BF320 2SJ111BL
Contextual Info: JUNCTION FET Item Number Part Number Manufacturer g. V BA GSS loss (V) (A) Min (S) Max 70 70 70 70 70 75 75 75 75 80 3.0m 4.5m 6.0m 8.0m 10m 2.0m 7.5m 7.5m 10m 17m 2.0m 3.0m 4.0m 4.5m 4.5m 350u 600u 600u 750u 6.0m 6.5m 7.0m 7.0m 7.5m 1.0m 1.5m 1.5m 3.0m 199

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

TIS88A equivalent

Abstract: 2N3456 equivalent J411 fet 2n5952 equivalent 2n3820 equivalent 2N5248 equivalent fet 2N4304 2n5245 equivalent 2N4304 equivalent 2N5454 equivalent
Contextual Info: a t t m ,© O R D E R IN G IN F O R M A T IO N Devices, Inc T O / » © 0© T Q K © K lO tP i M f l® The following is the product code index lor J-FET and MOS FET DIE/WAFERS having 2N, 3N JEDEC prefixes. This product code index is Solitron San Diego's standard for Q. A. production, marketing and sales.