2N508 Search Results

2N508

Abstract: 2N5088 2N5088 MOTOrola 2N5089 2N5089 MOTOROLA
Contextual Info: MOTOROLA Order this document by 2N5088/D SEMICONDUCTOR TECHNICAL DATA A m plifier Transistors 2N 5088 2N 5089 NPN Silicon COLLECTOR 3 EMITTER MAXIMUM RATINGS Rating C o lle c to r-E m itte r Voltage Symbol 2N508 8 2N508 9 Unit VCEO 30 25 Vdc C o lle c to r-B a s e Voltage

PN4250

Abstract: 2N5086 MPS6523 MPSH81 PN4249 PN4250A
Contextual Info: This I D" Material In . Discrete POWER & Signal Technologies □ National t-1 Se mi c o n d u c t o r ' “ fc-1 PNP Low Level Amplifiers Lü □ a Copyrighted □ jr □ x: -J V Device No. 2N5086 ru -C By Its Respective ro ho TO-92 92 2NS087 TO-92 (92)

2n 5088 transistor

Abstract: SOT-23 CEB
Contextual Info: 2N5088/89 / MMBT5088/89 NPN SMALL SIGNAL TRANSISTOR POWER SEMICONDUCTOR Features • • • • MMBT5088 / MMBT5089 Low Noise High Gain Epitaxial Planar Die Construction Available in both Through-Hole and Surface Mount Packages General Purpose, Low Noise Amplifier

2N5089

Abstract: 2N5087 2N5086
Contextual Info: 2N5086 _ 2N 5087 _ - PHILIPS INTERNATIONAL SbE » • 711005b D0M2t.74 751 « P H I N " T -Z ^ ^ f SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P small-signal transistors in plastic T O -9 2 envelope intended fo r low -noise stages in au d io equipm ents

2N5087

Abstract: transistor 2N5087
Contextual Info: ON Semiconductort Amplifier Transistor 2N5087 PNP Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 50 Vdc Collector–Base Voltage VCBO 50 Vdc Emitter–Base Voltage VEBO 3.0 Vdc Collector Current — Continuous

2N5088 equivalent

Abstract: 2N5088 2N5089
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTORS E 2N5088 2N5089 TO-92 CBE BC Amplifier Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N5088 2N5089 UNITS VCBO 35 30 V Collector -Base Voltage

Contextual Info: Lead Mounted Transistors NPN Transistors/TO-92 Type Number 2N4124 2N5172 2N5088 PN2222A 2N3904 2N4401 MPSA05/ITTA05 MPSA06/ITTA06 2N5551 MPSA42 VCEO Volts 25 25 30 40 40 40 60 80 160 300 hpE @ V ce/Ic V/mA 120-360 100-750 350-1400 100-300 100-300 100-300 min. 50

2N404

Abstract: 2N508 2N414 same 2N1305 2N1415 2N525 2N527 GE 2N526 2N396 2N1924
Contextual Info: 281 282 GERMANIUM SIGNAL TRANSISTORS B V ce r fh lb Package Outline No. Specification Sheet Ho. See 2N525. 281 20.10 See 2N524. 281 20.10 See 2N508, 2 N 1 17 5 and 2 N 1 41 3 series. 281 80.15 Pr Max. mW @ 1V, 20mA (iiA) (V) 2N43A’ 34-65 1.3 30 16 45 240

2N3563

Abstract: 2N5133 2N3638 2N3644 2N3645 2N5132 2N3638A 2N3702 to 106 2n5133 2N5088
Contextual Info: CENTRAL SEMICONDUCTOR 1989963 CENTRAI. SEMICONDUCTOR DE | n f H T b B 00D0S15 H 61C 00212 t>l NPN EPOXY - LOW NOISE LEVEL AMPLIFIER Cont'd. X a Vcb V CE V EB hFE at •c V CE V V V min max mA V 2N5088 2N5089 2N5127 2N5131 2N5133 30 25 20 20 20 30 25 12 15

2N1378

Abstract: 2N1924 2N2374 2N1373 2N526 2N508A 2N525 2N1274 2N1305 2N2001
Contextual Info: GERMANIUM PNPSMALL SIGNAL TRANSISTORS Type ycBo V Max YFWO V Max Vc, V Max Vc, V 2N465 2N466 2N467 2N508 2N508A 2N522 2N524 2N525 2N526 2N527 2N580 2N581 2N650 2N651 2N652 2N653 2N654 2N655 2N658 2N659 2N660 2N661 2N662 2N1057 2N1097 2N1098 2N1144 2N1145

2N5088G

Abstract: 2N5088 equivalent 2n5088 transistor 2N5089 2n2089 2N2089RLRE 2N5088 2N5089G 2n5088 application note
Contextual Info: 2N5088, 2N5089 Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com 3 COLLECTOR 2 BASE MAXIMUM RATINGS Rating Symbol Collector − Emitter Voltage Value Unit VCEO 2N5088 2N5089 Collector − Base Voltage Vdc VCBO

2N5088 equivalent

Abstract: 2N5088 2n5088 transistor 2N5089 2N5087 ST transistor 2N5089 equivalent 2N5089 NPN 2N5089 power ST 024
Contextual Info: ST 2N5088 / 2N5089 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the PNP transistor ST 2N5086 and ST 2N5087 are recommended.

2N5088 MOTOrola

Abstract: 2N5089 MOTOROLA 2N5088 equivalent 2n5088 transistor 2N5089 2N508 2N5088
Contextual Info: MOTOROLA Order this document by 2N5088/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5088 2N5089 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N508 8 2N508 9 Unit Collector – Emitter Voltage VCEO 30 25 Vdc Collector – Base Voltage

MPSA18

Abstract: 2n5088 transistor MPSA18C 2N5088 MPSA18 Fairchild
Contextual Info: MPSA18 C TO-92 BE NPN General Purpose Amplifier This device is designed for low noise, high gain, applications at collector currents from 1µ A to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted

br1271

Abstract: high gain low noise 2n BF112
Contextual Info: • S fê M IC O N D U G T O P ï ■>« 2N5088 2N5089 MMBT5088 MMBT5089 SOT-23 B Mark: 1 Q /1 R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose am plifier applications at collector currents from 1|aA to 50 mA.

2N5088

Abstract: 2N5089
Contextual Info: 2N5088, 2N5089 Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector − Emitter Voltage 2N5088 2N5089 Collector − Base Voltage 2N5088 2N5089 Emitter − Base Voltage

2N5088

Abstract: 2N5089 2N5088 equivalent 2N5089 transistor 2n5088 transistor ST 024 2N5086 2N5087 st2n5088 2N5088 power
Contextual Info: ST 2N5088 / 2N5089 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the PNP transistor ST 2N5086 and ST 2N5087 are recommended.

Contextual Info: 2N5087 Amplifier Transistor PNP Silicon Features • These are Pb−Free Devices* http://onsemi.com 3 COLLECTOR MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO 50 Vdc Collector−Base Voltage VCBO 50 Vdc Emitter−Base Voltage VEBO

2NS088

Abstract: 2n5088 transistor 2N5088
Contextual Info: Transistors 2N5088 USHA INDIA LTD AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: V ceo TO-92 = 2N5088: 30V • Collector Dissipation: Pc (max)=625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit Collector-Base Voltage VcBO 35

101B

Abstract: 2N5086
Contextual Info: Transistors 2N5086 USHA INDIA LTD AMPLIFIER TRANSISTOR TO-92 * Collector-Emitter Voltage: VCEo=50V • Collector Dissipation: Pc (max)=625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

2N1377

Abstract: 2N1414 2N1373 2n1614 Germanium power 2N1925 2N508 2N526 2N1309
Contextual Info: GERMANIUM PNPSMALL SIGNAL TRANSISTORS 1im hFC Min Max ycBo V Max YFWO V Max Vc, V Max 2N465 2N 466 45 35 12 12 30 20 20 20 15 15 27-45 56-90 1 1 2N467 2N508 2N 508A 2N 522 2N 524 35 20 30 15 30 12 10 10 10 15 15 18 25 8 30 20 20 25 15 30 15 6 7 2 10 112-180

2N5088

Contextual Info: 2N5088 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N5088 Availability Online Store

2n508

Abstract: 2n5088
Contextual Info: MOTOROLA Order this document by 2N5088/D SEMICONDUCTOR TECHNICAL DATA A m plifier Transistors 2N 5088 2N 5089 NPN Silicon COLLECTOR 3 EMITTER MAXIMUM RATINGS Rating C o lle c to r-E m itte r Voltage Symbol 2N508 8 2N508 9 Unit VCEO 30 25 Vdc C o lle c to r-B a s e Voltage

2N5086

Contextual Info: 2N5086 2N5087* M A X IM U M RATINGS Symbol Value Unit C o lluctor-E m itter Voltage VcEO -5 0 Vdc Collector-Base Voltage v CBO -5 0 Vdc E m iter-B ase Voltage Ve b O - 3 .0 Vdc ic -5 0 m Adc = 25°C PD 625 5.0 mW m w rc Tote l Device D issipation r'fi T q = 25’C