300 V 500 MA SOT223 Search Results

MPSA92(KSP92) equivalent

Abstract: BC214L equivalent MMBT3646 ss8550 TN6727A SS8050 KSP2222A equivalent MMBT5771 MPSA18 BC550 BC369
Contextual Info: Discrete Small Signal General Purpose Products VCEO V VCBO (V) VEBO (V) IC hFE Saturation Voltage Max (A) Min Max @VCE (V) @IC (mA) VCE (sat) (V) @IC (mA) @IB (mA) SOT-223 NPN Configuration BCP68 20 30 5 1 85 375 1 500 0.5 1 100 FZT649 25 35 5 3 100 300

bta41-600b application

Abstract: TYN1212 zvs driver thyristor capacitive discharge ignition ACST4108 T830T-8FP Electronic ignitors for HID lamp circuits bta06 application notes BTW67-1000 BTA41-800B
Contextual Info: V 500 600 600 700 700 (V) 800 800 800 800 800 800 800 800 800 dV/dt VCL @ 100 (di/dt)c IGT max (4) µA (1) @ Tj = 125 °C @ Tj = 125 °C (V) (mA) (A/ms) (V/µs) 850 10 0.5 500 850 10 2 500 850 25 5 1000 850 10 3.5 500 850 30 8 2000 850 10 5 300 850 35 12

Triac ACST47S

Abstract: ACS1085s 7s ACS1025T ACS110 acs4025s triac acs ACS102-5T Data Sheet Triac ACS108 Triac ACS108 acs 08 5s
Contextual Info: ACS for actuators Part number IT RMS (A) IGT (mA) dV/dt (V/µs) (dI/dt)ON (A/µs) (dI/dt)C (A/ms) ACS102-5T 0.2 10 300 20 0.15 TO-92, SO-8 ACS108-5S 0.8 10 500 100 0.3 SOT-223, TO-92 ACS110-7S 1 10 500 50 0.5 DIP-8, SOT-223 ACS120-7S 2 10 500 50 1 ACS402-5S

Contextual Info: PZTA44 NPN Silicon Planar Epitaxial Transistor COLLECTOR 2, 4 1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR BASE 1 4 1 2 3 SOT-223 3 EMITTER ABSOLUTE MAXIMUM RATINGS TA=25 C Symbol VCEO VCBO VEBO IC(DC) 400 500 6 300 Unit V V V mA Total Device Disspation TA=25˚C

PZTA44

Abstract: VCB 400V PT 10000
Contextual Info: PZTA44 NPN Silicon Planar Epitaxial Transistor COLLECTOR 2, 4 1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR BASE 1 4 1 2 3 SOT-223 3 EMITTER ABSOLUTE MAXIMUM RATINGS TA=25 C Symbol VCEO VCBO VEBO IC(DC) 400 500 6 300 Unit V V V mA Total Device Disspation TA=25˚C

Contextual Info: PZTA44 NPN Silicon Planar Epitaxial Transistor * "G" Lead Pb -Free COLLECTOR 2, 4 1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR BASE 1 4 1 2 3 SOT-223 3 EMITTER ABSOLUTE MAXIMUM RATINGS (TA=25 C) Symbol VCEO VCBO VEBO IC(DC) 400 500 6 300 Unit V V V mA Total Device Disspation TA=25˚C

BFG591 amplifier

Abstract: BFM520 BFM505 BFC505 BFC520 BFE505 sot172 Philips Semiconductors Selection Guide bf763 S0T343
Contextual Info: Philips Semiconductors RF Wideband Transistors Selection guide FIRST GENERATION NPN WIDEBAND TRANSISTORS fT up to 3.5 GHz PACKAGE fT / l c CURVE (see Fig.1 ) LEADED SOT54 SURFACE-MOUNT SOT23 SOT89 SOT143 SOT223 SOT323 (1) BFT25 (2) BF747 BF547 BF547W BFS17

Contextual Info: SOT223 DARLINGTON TRANSISTORS Pinout : 1-Base, 2&4-Collector, 3-Emitter v CE sa t Max h -E Type V lc(cont) A Ptot W M in/M ax 160 140 2.0 2.0 FZT605 140 120 2.0 2.0 FZT604 120 100 2.0 2.0 v CBO v CEO V FZT600 fT Typ MHz Com plem ent - at Iq / V ce mA / Volts

FZT858

Abstract: fzt957
Contextual Info: SOT223 HIGH C U R R EN T HIGH PERFO RM AN CE T R A N S IS T O R S Pinout : 1-Base, 2&4-Collector, 3-Emitter r Type NPN FZT857 VCBO V v CEO V 'C(cont) A Pfot W hFE M in/M ax at Ic / V ce m A / Volts v CE(sat) Max at lc / Iß Volts mA fT Typ MHz Com plem ent

Contextual Info: Section S: Bipolar Transistors _ High Voltage Transistors ! 0 0 to 5 0 0 V olts SOT223 P!\IP High Voltage {Vq-o up BOOVI to Transistors Pinout Details: 1-Base, 2+4-Collector, 3-E m itter V CBO V CEO hFE lc Type V CE sat

FZT600

Abstract: FZT603
Contextual Info: SOT223 DARLINGTON TRANSISTORS Pinout : 1-Base, 2&4-Collector, 3-Emitter v CE|sat Max VcBO V v CEO V ^C cont) A <o h :E Type 160 140 2.0 2.0 Min/M ax Typ MHz t,t Com plem ent 1000/10 150- - 150 FZT705 150 FZT704 at lc / VCE m A / Volts Volts at l c / Iß mA

zetex fzt788b

Abstract: FZT788B
Contextual Info: Section S: Bipolar Transistors L o u j S a tu ra tio n T ra n s is to rs up to I QOV SOT223 L o w S a t u r a t i o n PISJP T r a n s i s t o r s u p t o 1 0 0 V Pinout Details: 1-Base, 2+4 C ollector, 3-Em itter

PZT2907

Contextual Info: 1.5W SOT223 BIPOLAR TRANSISTORS HIGH POWER TRANSISTORS SOT223 PACKAGE The latest comprehensive data to fully support these parts is readily available. SOT223 6.5 0°-7° 1.6 3.0 7.0 max 3.5 B C E 2.3 0.7 15° 15° 0.65 0.32 max 4.6 4.6 2.0 min 6.3 2.3 1.5 min

F2T651

Contextual Info: Section S: Bipolar Transistors lo iij The Zetex Low Saturation Voltage Transistors offer excellent performance solutions in surface mounted packages SOT223, SOT89, SOT23, SOT323 and the compact through hole E-Line package. S a:urationTransistors up to I 0 0 V o lts

Contextual Info: Philips Semiconductors Product specification NPN high voltage transistor FEATURES PZTA44; PZTA45 PIN CONFIGURATION • High voltage • High current. DESCRIPTION High voltage NPN transistor in a 4-lead SOT223 surface mounting package, especially suitable for use

PBHV9540Z

Abstract: PBHV8140Z SC-73 640 smd transistor marking transistor SMD MARKING CODE MARKING CODE SMD IC
Contextual Info: PBHV9540Z 500 V, 0.5 A PNP high-voltage low VCEsat BISS transistor Rev. 01 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

Contextual Info: PBHV9540Z 500 V, 0.5 A PNP high-voltage low VCEsat BISS transistor Rev. 01 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

Contextual Info: Product specification Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and intended for use in relay, high-speed and line-transformer drivers.

V8540Z

Abstract: PBHV8540Z PBHV9040Z SC-73 MARKING CODE SMD IC
Contextual Info: PBHV8540Z 500 V, 0.5 A NPN high-voltage low VCEsat BISS transistor Rev. 01 — 7 February 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.

PBHV8540Z

Abstract: PBHV9040Z SC-73 MARKING CODE SMD IC MARKING SMD IC CODE
Contextual Info: PBHV8540Z 500 V, 0.5 A NPN high-voltage low VCEsat BISS transistor Rev. 02 — 14 January 2009 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.

Contextual Info: Not Recommended for New Design Please Use DZTA42 SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZTA42 ISSUE 23 –– NOVEMBER SEPTEMBER93 2007 ✪ ISSUE FEATURES * Suitable for video output stages in TV sets and switch mode power supplies * High breakdown voltage

PBHV9050Z NXP

Abstract: V9050Z SC-73
Contextual Info: PBHV9050Z 500 V, 250 mA PNP high-voltage low VCEsat BISS transistor Rev. 1 — 19 August 2010 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

Contextual Info: PBHV9050Z 500 V, 250 mA PNP high-voltage low VCEsat BISS transistor Rev. 1 — 19 August 2010 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

FZTA42

Abstract: FMMTA42 FZTA92 ZTA42
Contextual Info: SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZTA42 ISSUE 23 –– NOVEMBER SEPTEMBER93 2007 ✪ ISSUE FEATURES * Suitable for video output stages in TV sets and switch mode power supplies * High breakdown voltage C E C COMPLIMENTARY TYPE – FZTA92 PARTMARKING DETAIL – DEVICE TYPE IN FULL