300JI Search Results

455khz ift toko

Abstract: 658AN-A003WZ TOKO IFT 455khz TOKO IFT 560pF TOKO FM Coils 658G toko coils 455khz
Contextual Info: TOKO VflriflbliB CoMs for MtatHttiiff 5CDM 35 TYPE 5CDM For Reflow Soldering Frequency Range: 100KHz~15MHz Inductance Range: 1-300jiH 2.5Max. 2.2 0.9 5.8 T i .n Unit: mm Features • Wide inductance range, ideal for AM and FM IFT applications. • Low profile version of 5CD for use in ultra-thin pocket radio.

Ablestik

Abstract: silicon carbide CD-260-0.30-D photodetector HC 8401 UV-A Photodetector ti 8401
Contextual Info: CREE RESEARCH INC SSE D 250457b □□□□□2b 75fl WM CRE • Silicon Carbide Ultraviolet Photodetector Chip 300 im x 300jim Die Size CD-260-0.30-D rw iPmCt C 4 k t R E S E A F t C H ^ l N C The Leader te Silicon Caitride Solid-State Techno logy Electrical/Optical Characteristics (At TA= 25°C

Contextual Info: OPTEK TECHNOLOGY INC MAE D • b7TflSflO 0001453 TT3 ■ OTK i / n u r i civ Product Bulletin HCT2907M May 1990 ^ r - *» -» /N /s Surface Mount PNP General Purpose Transistor Type HCT2907M 0.024 ORIENTATION 0 -37 - , 1. 1 6 7 *1 D 0.125 0.115 0.015 0.085

2N2907A sot-23

Abstract: JAN2N2907A 2N2907A surface mount 2N2907A HCT2907M JAN2N2907
Contextual Info: O P TE K T EC H N O L O G Y INC MAE ti7TûSÛ0 0 0 0 1 4 5 3 D TT3 • I OTK n, y jr I civ Product Bulletin HCT2907M May 1990 T'iT'O1 1 ! Surface Mount PNP General Purpose Transistor Type HCT2907M 0.024 ORIENTATION 0.125 0.115 3.18 (2.92) 0.015 0.085 (2.67)

samsung NAND FSR

Abstract: 29cd16 NAND IC s CIRCUIT DIAGRAM OF 15 INCH SAMSUNG MONITOR 264Byte
Contextual Info: KM29N16000 2M x 8 Bit NAND Flash Memory SEMICONDUCTOR PRELIMINARY- June 1994 FEATURES GENERAL DESCRIPTION • Single 5 - volt Supply • Organization - Memory Cell Array : 2M +64K x 8 - Data Register : (258 + 8) x 8 • Automatic Program and Erase - Page Program : (256 + 8)Byte

Contextual Info: HIGH-SPEED DUAL 1-0F-4 DECODER IDT54AHCT139 FEATURES: DESCRIPTION: • Equivalent to ALS speeds and output drive over full temperature and voltage supply extremes The ID T54AH C T139 are dual 1-of-4 decoders built using ad­ vanced C E M O S , a dual metal C M O S technology. The device

Contextual Info: FAST CMOS OCTAL LATCHED TRANSCEIVER Integrated Device Technology« Inc. IDT54/74FCT543 IDT54/74FCT543A IDT54/74FCT543C FEATURES: DESCRIPTION: • • • • The IDT54/74FCT543/A/C is a non-inverting octal trans­ ceiver built using advanced CEMOS , a dual metal CMOS

Contextual Info: IBM0117400 IBM0117400M IBM0117400B IBM0117400P 4M x 4 11/11 DRAM Features • 4,194,304 word by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 2048 Refresh Cycles - 32 ms Refresh Rate (SP version)

Contextual Info: PERFORMANCE SEMICONDUCTOR EOE D TObSST? 0000711 3 P54/74PCT157A/B— P54/74PCT158A/B DATA SELECTOR/M ULTIPLEXER FEATURES • Quad 2-Input Data Selector/ M ultiplexer Three-State Outputs ■ Full CMOS Implementation Fu lly T T L Com patible Input and Output Le ve ls

IRFS730

Abstract: 733 mosfet 731 MOSFET IRFS731 IR 733 IRFS732 IRFS733 0D173
Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7^4142 IRFS730/731/732/733 DDlTBbl 777 «SPIC K N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R ds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance

Contextual Info: Preliminary BENCHMARQ bq2014 Gas Gauge IC With External Charge Control Features General Description >- Conservative and repeatable m easurem ent of available charge in rechargeable batteries T he bq2014 G as G auge IC is intended for battery-pack or in-sys­

Contextual Info: SOT223 PNP SILICON PLANAR M EDIUM POWER HIGH GAIN TRANSISTOR FZT788B IS S U E 3 - OCTOBER 1995- - - FEATURES * * Low equivalent on-resistance; RCE|Sat 93mQ at 3A Gain of 300 at lc=2 A m p s and Very low saturation voltage

39C10

Abstract: lifo stack IDT39C10
Contextual Info: INTEGRATED DEVICE T7 D e | MÖE5771 0005001 7 9 4825771 INTEGRATED DEVICE MICROSLICE PRODUCT FEATURES: DESCRIPTION: • Low-power CEMOS ” The IDT39C10 microprogram sequencers are designed for use In high-performance microprogram state machines. These micro­

1am2

Abstract: FCT645 FCT245 74PCT245
Contextual Info: jim i > *« P54/74FCT245/A/C P54/74PCT245/A/C P54/74FCT645/A/C (P54/74PCT645/A/C) Octal Bidirectional Transceivers with 3-State Outputs jA - -

T3591

Contextual Info: X R -T 3 5 9 1 A C 'E X A R [.the analog plus Single C hip V.35 Transceiver companyJ M June 1997-3 FEATURES • Single Device Provides Three Receivers and Trans­ mitters Fully Compliant with Electrical Specification of V.35 Interface Receiver Differential Inputs are

AC1224

Abstract: Pressure TransDUCER 4 WIRE circuit diagram connector
Contextual Info: Bridge Transducer Signal Conditioner _ 1B32 ANALOG DEVICES FEATURES Low Cost Complete Signal-Conditioning Solution Small Package: 28-Pin Double DIP Internal Thin-Film Gain Network High Accuracy Low Input Offset Tempco: ±0.07 jlV/°C Low Gain Tempco: ±2ppm/°C

Contextual Info: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR KSB794/795 AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS C haracteristic Collector- Base Voltage Symbol : KSB794 : KSB795 Collector- Emitter Voltage : KSB794 Rating Unit

Contextual Info: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR BU508AF TV HORIZONTAL OUTPUT APPLICATIONS ABSOLUTE MIXIMUM RATING C haracteristic Symbol Rating Unit Collector Emitter Voltage VcES 1500 V Collector Emitter Voltage VcEO 700 V Emitter Base Voltage V ebo 5 V Collector Current DC

Contextual Info: BDW93/A/B/C NPN EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR HAMMER DRIVERS, AUDIO AMPLIFIERS APPLICATIONS • Complement to BDW94, BDW94A, BDW94B and BDW94C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Symbol Rating Unit 45 V : BDW93A 60 V : BDW93B

Contextual Info: 7^2^237 QOSTHCn T • S G S -T H O M S O N KLUOTT^OlDOi S G S-TH0MSÔN 3 3 “ l> 2N6544 2N6545 _ 3DE D HIGH VOLTAGE POWER SWITCH DESCRIPTION The 2N6544 and 2N6545 are multiepitaxial mesa NPN transistors in Jedec TO-3 metal case. They are intended for high voltage, fast switching applica­

Contextual Info: ADVANCE M IC R O N 1 MT4LG16257 S 256K DRAM DRAM 256K x 16 DRAM 3.3V FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +3.3V ±0.3V power supply*

Contextual Info: • o o 2 t i 3 EH ü ■ SCS-THOMSON IW fô m i « ! S G S - THOMSON ^ T - 3 3 * z ° i 2N6386 2N6387/2N6388 30E ]> POWER DARLINGTON TRANSISTORS D E S C R IP T IO N The 2N6386, 2N6387 and 2N6388 are silicon epi­ taxial-base NPN transistors in monolithic Darling­

Contextual Info: T2 UNITRODE CORP 9347963 UNITRODE CORP DE| " 0010^2 1 92 D 10992 RECTIFIERS D ' ü»« High Efficiency, 60A SES5803 FEATURES • Low Forward Voltage • Fast Switching Speeds • High Surge Capability • Low Therm al Resistance • M echanically Rugged DO-5 Package

Contextual Info: SAMSUNG SEMICONDUCTOR INC MPSA55 14E D I 71fc4142 0 0 0 7 3 t i 4 7 PNP EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR • Collector-Em itter Voltage: Veto =60V • C ollector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic