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    300V TRANSISTOR PNP 2A Search Results

    300V TRANSISTOR PNP 2A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    300V TRANSISTOR PNP 2A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green FZT957 300V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > -300V • • IC = -1A high Continuous Collector Current • • ICM = -2A Peak Pulse Current Case: SOT223 Case material: molded plastic. “Green” molding compound.


    Original     		PDF FZT957 OT223 -300V -240mV FZT857 J-STD-020 MIL-STD-202, DS33191

    FZT957QTA

    Abstract: FZT957
    Text: A Product Line of Diodes Incorporated Green FZT957 300V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > -300V IC = -1A high Continuous Collector Current ICM = -2A Peak Pulse Current


    Original     		PDF FZT957 OT223 -300V -240mV FZT857 AEC-Q101 OT223 J-STD-020 FZT957 DS33191 FZT957QTA

    ETO-126

    Abstract: ZBD957 3105 ic
    Text: ZBD957 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated PARAMETER SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V(BR)CBO -330 Collector-Emitter Breakdown Voltag V(BR)CER Collector-Emitter Breakdown Voltage MAX. UNIT CONDITIONS. -440


    Original     		PDF ZBD957 -10mA -300V -300V, -10mA, -500mA, -50mA -100V ETO-126 ZBD957 3105 ic

    ZTX957

    Abstract: TO-1 amps pnp transistor DSA003780
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX957 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. TYP. MAX. UNIT CONDITIONS. -710 -850 mV IC=-1A, VCE=-10V* Static Forward Current Transfer Ratio


    Original     		PDF ZTX957 -100mA, 50MHz -500mA, -50mA -100V -10mA, 100ms ZTX957 TO-1 amps pnp transistor DSA003780

    PHOTOELECTRIC SENSORS DATA SHEET

    Abstract: photoswitch 4pin mini din wiring TRIAC tag 88 R1142 Seven Transistor Array PNP 45LFM rightsight R1117 300V transistor pnp 2a
    Text: PHOTOSWITCH R Photoelectric Sensors Quick Selection Guide 42EF 44R 42CA AccuSightt • Patented housing design with 1200 psi washdown rating • Universal 18mm and thruĆhole mounting options • 360_ visible status indicators • DC only and universal supply models


    Original     		PDF 750mA 100mA FET-30mA NPN-250mA DCV-30mA 2-15ms 2-23ms 2-18ms 1-20ms 5-20ms PHOTOELECTRIC SENSORS DATA SHEET photoswitch 4pin mini din wiring TRIAC tag 88 R1142 Seven Transistor Array PNP 45LFM rightsight R1117 300V transistor pnp 2a

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original     		PDF 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN

    CH520G2

    Abstract: CH520G2-30PT transistor digital 47k 22k PNP NPN FBPT-523 CH521G2-30PT npn switching transistor 60v transistor R2-47K transistor digital 47k 22k 500ma 100ma CH3904T1PT
    Text: 力勤股份有限公司 FBP新包裝產品簡介 FBP封裝 隨著世界產業的發產趨勢各種數位消費性產品的發展， 如DSC / LCD TV / PDA & 3C產品…消費性產品的生產, 均以輕薄、短小的外觀與高性能的人性化功能吸引消


    Original     		PDF A1100) QFN200 CHDTA143ET1PT FBPT-523 100mA CHDTA143ZT1PT CHDTA144TT1PT CH520G2 CH520G2-30PT transistor digital 47k 22k PNP NPN FBPT-523 CH521G2-30PT npn switching transistor 60v transistor R2-47K transistor digital 47k 22k 500ma 100ma CH3904T1PT

    Untitled

    Abstract: No abstract text available
    Text: SOP8501 SOP8501 Ordering number : ENN8007 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features • • High breakdown voltage. VCEO≥400V Excellent hFE linearlity. Specifications


    Original     		PDF OP8501 ENN8007 2000mm2â OP8501/D

    ITR04446

    Abstract: ITR04587
    Text: SOP8501 Ordering number : ENN8007 SOP8501 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features • • High breakdown voltage. VCEO≥400V Excellent hFE linearlity. Specifications


    Original     		PDF OP8501 ENN8007 VCEO400V) 2000mm2 ITR04446 ITR04587

    transistor 2N3906 smd 2A SOT23

    Abstract: 2n3904 TRANSISTOR REPLACEMENT GUIDE BC327-40 SMD bc107 TRANSISTOR SMD CODE PACKAGE SOT23 TRANSISTOR BC337-25 PNP BC548 TRANSISTOR REPLACEMENT BC327-25 SMD TRANSISTOR BC337 SMD 2n3906 REPLACEMENT MMBT3094
    Text: Small Signal Transistors Industry Standard BF722 BF723 BFN38 CZTA42 CZTA92 KSA539 KSA643 KSA733 KSC1623 KSC815 MMBT3094 MMBT3906 MMBT4401 MMBT4403 MMBTA42 ST Nearest ST Replacement Industry Standard BF720 BF721 BF720 STZTA42 STZTA92 MMBTA92 MPSA42 MPSA92 MSB709


    Original     		PDF BF722 BF723 BFN38 CZTA42 CZTA92 KSA539 KSA643 KSA733 KSC1623 KSC815 transistor 2N3906 smd 2A SOT23 2n3904 TRANSISTOR REPLACEMENT GUIDE BC327-40 SMD bc107 TRANSISTOR SMD CODE PACKAGE SOT23 TRANSISTOR BC337-25 PNP BC548 TRANSISTOR REPLACEMENT BC327-25 SMD TRANSISTOR BC337 SMD 2n3906 REPLACEMENT MMBT3094

    Rubycon photoflash capacitors 330v 120uF

    Abstract: photoflash charger RUBYCON CAPACITOR 100uF 400v RUBYCON CAPACITOR 330V 80uf camera PAO367
    Text: ZXSC440 PHOTOFLASH CHARGER Description Pin Assignments The ZXSC440 is a dedicated photoflash charger,charging an 80µF photoflash capacitor to 300V in 3.5 seconds from a 3V supply. Top View ADVANCE INFORMATION VCC GND READY CHARGE DRIVE VFB SENSE N/C The flyback conversion efficiency is typically 75%,much


    Original     		PDF ZXSC440 ZXSC440 DS33619 Rubycon photoflash capacitors 330v 120uF photoflash charger RUBYCON CAPACITOR 100uF 400v RUBYCON CAPACITOR 330V 80uf camera PAO367

    Rubycon photoflash capacitors 330v 120uF

    Abstract: PAO367 T-15-089 RUBYCON CAPACITOR 330V 120uf photoflash charger 3V to 300V transformer Rubycon capacitor 330V Rubycon 400V 100uF capacitor Rubycon photoflash capacitors Rubycon photoflash capacitors 300v
    Text: ZXSC440 PHOTOFLASH CHARGER Description Pin Assignments The ZXSC440 is a dedicated photoflash charger,charging an 80µF photoflash capacitor to 300V in 3.5 seconds from a 3V supply. Top View ADVANCE INFORMATION VCC GND READY CHARGE DRIVE VFB SENSE N/C The flyback conversion efficiency is typically 75%,much


    Original     		PDF ZXSC440 ZXSC440 DS33619 Rubycon photoflash capacitors 330v 120uF PAO367 T-15-089 RUBYCON CAPACITOR 330V 120uf photoflash charger 3V to 300V transformer Rubycon capacitor 330V Rubycon 400V 100uF capacitor Rubycon photoflash capacitors Rubycon photoflash capacitors 300v

    2SA1773

    Abstract: 2SC4616
    Text: Ordering number:EN3399C 2SA1773 : PNP Eppitaxial Planar Silicon Transistor 2SC4616 : NPN Triple Diffused Planar Silicon Transistor 2SA1773/2SC4616 High-Voltage Driver Applications Features Package Dimensions • Large current capacity IC=2A . · High breakdown voltage (VCEO≥400V).


    Original     		PDF EN3399C 2SA1773 2SC4616 2SA1773/2SC4616 VCEO400V) 2SA1773/2SC4616] 2SA1773 2SC4616

    2SA1786

    Abstract: 2SC4646 35123 2SC4646E
    Text: Ordering number:EN3512B 2SA1786 : PNP Epitaxial Planar Silicon Transistor 2SC4646 : NPN Triple Diffused Planar Silicon Transistor 2SA1786/2SC4646 High Voltage Driver Applications Features Package Dimensions • Large current capacity IC=2A . · High breakdown voltage (VCEO≥400V).


    Original     		PDF EN3512B 2SA1786 2SC4646 2SA1786/2SC4646 VCEO400V) 2SA1786/2SC4646] 2SA1786 2SC4646 35123 2SC4646E

    IRF9210

    Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
    Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF


    OCR Scan     		PDF 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN 3512B _ 2SA1786/2SC4646 2SA1786:PNP Epitaxial Planar Silicon Transistor 2SC4646:NFN Triple Diffused Planar Silicon Transistor High Voltage Driver Applications Features • Large current capacity Ic = 2A • High breakdown voltage (Vceo = 400V)


    OCR Scan     		PDF 3512B 2SA1786/2SC4646 2SA1786 2SC4646 2SA1786 12894TH AX-8287/4231MH 5180TA X-6912

    la 4142

    Abstract: MJE340 MJE200 MJE210 MJE350 300V transistor pnp 2a 3V to 300V transformer
    Text: SAMSUNG S EM I C ONDU C T OR INC MJE210 14E O J j 71134142 QQGVbTfl 3 | PNP EPITAXIAL SILICON TRANSISTOR COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN-BANDWIDTH PRODUCT-MIN fT=65MHz @ lc=-100m A Complementary to MJE200


    OCR Scan     		PDF MJE210 65MHz -100mA MJE200 Vce--10V, MJE350 r-33-fl la 4142 MJE340 MJE200 MJE350 300V transistor pnp 2a 3V to 300V transformer

    IFRZ44

    Abstract: IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N
    Text: PRODUCT INDEX ALPHA NUMERIC INDEX Part numbers In BOLD are preferred standard parts. PART NO. 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRFS30 IRF531 IRF532 IRF533 IRF540 IRF541


    OCR Scan     		PDF 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IFRZ44 IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N

    2tj transistor

    Abstract: A1786 sanyo s-w 1000 MARKING 3512B pnp transistor 400V 500mA C4646 2SA1786 2SC4646 3512B en3512
    Text: 7 cH 7 0 ? b DDlSbST T ib O rdering num ber: E N 3 5 1 2 B 2SA1786/2SC4646 N0.35 12B k 2SA1786:PNP Epitaxial P lanar Silicon Transistor 2SC4646:NPN Triple Diffused Planar Silicon Transistor SAXYO i High Voltage Driver Applications F e a tu re s • Large current capacity Ig = 2A


    OCR Scan     		PDF EN3512B 3512B 2SA1786/2SC4646 2SA1786 2SC4646 2034/2034A SC-43 7tlt17D7b 2tj transistor A1786 sanyo s-w 1000 MARKING 3512B pnp transistor 400V 500mA C4646 3512B en3512

    ic 3994

    Abstract: sanyo WG BE 4616 2044A CLI 100 NPN Transistor WG SANYO 2SA1773 2SC4616 SA17 pnp transistor 400V 500mA
    Text: Ordering num ber: EN 3399C 2SA1773/2SC4616 N0.3399C 2SA1773.PNP Epitaxial Planar Silicon Transistor 2SC4616:NPN Triple Diffused Planar Silicon Transistor SÄXYO i High Voltage Driver Applications F e a tu re s • Large current capacity Ic = 2A • High blocking voltage (Vc e O—400V)


    OCR Scan     		PDF 3399C 2SA1773/2SC4616 2SA1773 2SC4616 2SA1773 ic 3994 sanyo WG BE 4616 2044A CLI 100 NPN Transistor WG SANYO SA17 pnp transistor 400V 500mA

    Untitled

    Abstract: No abstract text available
    Text: PNP SILICON PLANAR POWER TRANSISTOR ZBD957 PROVISIONAL DATASHEET ISSUE A - NOVEMBER 94 FEATURES * Fast switching * Guaranteed hFE specified up to 1 Amp * Low collector-emitter saturation voltage T0126 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage


    OCR Scan     		PDF ZBD957 T0126 -10mA, 50MHz ---500mA, -50mA -100V

    sy 710

    Abstract: SY 170
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX957 IS S U E 3 - J U N E 94- FEATURES * 1 A m p continuous current * * U p to 2 A m p s peak current Very low saturation voltage


    OCR Scan     		PDF ZTX957 -10mA, -100mA, 50MHz -500mA, -50mA sy 710 SY 170

    schematic motor control uc3842

    Abstract: transistor BJT 2N2222 uc3842 motor driver circuit Switching Power Supply Schematic Diagram uc3842 STHI20N50 uc3842 step down drive motor 10A with transistor P channel MOSFET 2N2222 bjt BJT 2N2222 dc current gain 300V dc dc STEP DOWN
    Text: f Z J SGS-THOMSON * J § „ BÌODIBS IILi inS®HDÈi TECHNICAL NOTE AN ECONOMIC MOTOR DRIVE WITH VERY FEW COMPONENTS INTRODUCTION The main objectives of this design are the econo­ my and circuit simplicity which enable costs to be reduced to a minimum. For this reason the design


    OCR Scan     		PDF STHI10N50 schematic motor control uc3842 transistor BJT 2N2222 uc3842 motor driver circuit Switching Power Supply Schematic Diagram uc3842 STHI20N50 uc3842 step down drive motor 10A with transistor P channel MOSFET 2N2222 bjt BJT 2N2222 dc current gain 300V dc dc STEP DOWN

    schematic motor control uc3842

    Abstract: STHI20N50 Switching Power Supply Schematic Diagram uc3842 uc3842 power factor uc3842 motor driver circuit transistor BJT 2N2222 bjt 2n2222 driver circuit uc3842 step down BJT 2N2222 dc current gain snubber circuit for mosfet
    Text: 7 S G S T H O M S O N Mm [i^ 0 ^ @ [l[L [l § ir ^ © [^ ]0 © S TECHNICAL NOTE AN ECONOMIC MOTOR DRIVE WITH VERY FEW COMPONENTS INTRODUCTION The main objectives of this design are the econo­ my and circuit simplicity which enable costs to be reduced to a minimum. For this reason the design


    OCR Scan     		PDF STHI10N50 schematic motor control uc3842 STHI20N50 Switching Power Supply Schematic Diagram uc3842 uc3842 power factor uc3842 motor driver circuit transistor BJT 2N2222 bjt 2n2222 driver circuit uc3842 step down BJT 2N2222 dc current gain snubber circuit for mosfet