305 MOSFET TRANSISTOR Search Results

IRF9210

Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
Contextual Info: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF

d 434 mosfet

Abstract: T0220AB mosfet 345 T0-220AB mosfet MOSFET N BUK854-500IS 200B 100a mosfet MOSFET 606
Contextual Info: P hilip s S e m ico n d u cto rs Index PowerMOS Transistors including TOPFETs and IGBTs ¡PAGE | TYPE NUMBER |TECHNOLOGY ENVELOPE BUK100-50DL TOPFET T0220AB 24 BUK100-50GL TOPFET T0220AB 32 BUK100-50GS TOPFET T0220AB 41 BUK101-50DL TOPFET T0220AB 50 BUK101-50GL

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors CJ2306 N-Channel 30-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S6

12 volt dc to 220 volt ac inverter 1000 watts

Abstract: 220 ac INVERTER without transformer 12 VOLTS INVERTER CIRCUIT USING MOSFET osram transistor Electronic ballast AR181 FULL WAVE RECTIFIER CIRCUITS 220 AC motorola AR181 Motorola Bipolar Transistor BOOK osram ballast circuit 12 volt ac to dc bridge rectifier circuit
Contextual Info: BIPOLAR TRANSISTORS EXCEL IN OFF-LINE RESONANT CONVERTERS Prepared by Jim Spangler, Applications Engineer Motorola Semiconductor Products Inc Phoenix, Az. Reprinted with permission of POWERTECHNICS, March, 1986 issue. 1986 Darnell Research Inc. All rights reserved.

Contextual Info: MO TO RO LA SC X ST RS /R F bflE D • b 3 b ? S S H DGiöfiB? SSb ■ MOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 8.0 AMPERES RDS(on) = °-80 OHM

dc-ac converter royer

Abstract: 12v schematic of fluorescent lamps schematic diagram modified sine wave dc-ac inverter Royer resonant an1722 ccfl Royer converter tsm108 transformer winding formula 220v Ac to 12v Dc royer dc-ac converter royer 220v
Contextual Info: AN1722 APPLICATION NOTE Design and Realization of a CCFL Application Using TSM108, STN790A, or STS3DPFS30, and STSA1805 1. ABSTRACT This technical document shows how to use the integrated circuit TSM108, the PNP power bipolar transistor STN790A, or the P channel power MOSFET STS3DPFS30, the NPN power bipolar transistor

1262C

Contextual Info: L H 1262C B /C A C SIEM EN S Dual Photovoltaic MOSFET Driver Preliminary Data Sheet FEATURES • High open circuit voltage • High short circuit current • High I/O isolation voltage • Logic compatible input • High reliability D im ensions in Inches mm

Contextual Info: Provisional Data Sheet No. PD - 9.1722 International IOR Rectifier IRFE210 dv/dt R A TED J ANTX2N6784U HEXFET TRANSISTOR JANTXV2N6784U [REF: M IL-PRF-19500/556] R E P E T IT IV E A VA LA N CH E A N D N -C H A N N E L 200Volt, 1.512, HEXFET Product Summary

fdb28n30tm

Abstract: FDB28N30
Contextual Info: UniFETTM FDB28N30 tm N-Channel MOSFET 300V, 28A, 0.129Ω Features Description • RDS on = 0.108Ω ( Typ.)@ VGS = 10V, ID = 14A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

IRF641

Abstract: IRF643 IRF841 PFC55
Contextual Info: El 3875081 d F | 3ö7SDöi DaiagsT a |~ G E SOLID Standard Power M O S FE T s STATE 01E 1 8 3 59 D IRF641, IRF643 F ile N u m b e r 1585 Power MOS Field-Effect Transistors

transistor rf m 9860

Abstract: equivalent transistor c 4793 mosfet 4459 C 5763 transistor transistor c 4793 transistor 5763 transistor 17556 17556 transistor 17853 mosfet IC 4490
Contextual Info: -. MITSUBISHI RF POWER MOS FET ATTENTION OBSERVE PRECAUTIONS FOR HANDLING «ion date: I S ' V N o v . ’M ELETROSTATIC SENSITIVE DEVICES , O H X J F X Silicon MOSFET Power Transistor,520MHz 30W DESCRIPTION O U T L IN E D R A W IN G RD30HUF1 is a MOS FET type transistor specifically designed for

Contextual Info: PD - 9.683A International Ek>ri Rectifier IRGBC40U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

2N7224 JANTXV

Abstract: 3000CL 2N7224 IRFM150
Contextual Info: Data Sheet No. PD-9.487C INTERNATIONAL RECTIFIER IOR REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM150 SN7SS4 JANTXSN7SS4 JANTXV2N7224 ;n N-CHANNEL [REF: M IL-S-19500/59S] Product Summary 100 Volt, 0.07 Ohm HEXFET The HEXFET® technology is the key to International

OUTLINE DIMENSIONS in inche

Abstract: marking 951 12W MARKING sot23 ZXTN2018F ZXTP2027F ZXTP2027FTA
Contextual Info: ZXTP2027F 60V, SOT23, PNP medium power transistor Summary V BR CEV > -100V, V(BR)CEO > -60V IC(cont) = -4A RCE(sat) = 31 m⍀ typical VCE(sat) < -60 mV @ -1A PD = 1.2W Complementary part number: ZXTN2018F Description Advanced process capability and package design have been used to

smd transistor marking zg

Abstract: transistor smd zG TRANSISTOR SMD MARKING zg 2n7002bkv NXP SMD mosfet MARKING CODE NXP SMD TRANSISTOR MARKING CODE s1 2N7002BKV/DG/B2115
Contextual Info: 2N7002BKV 60 V, 340 mA dual N-channel Trench MOSFET Rev. 2 — 22 September 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET

TRANSISTOR SMD MARKING zg

Abstract: 2N7002BKV transistor smd zG TRANSISTOR SMD MARKING CODE zg
Contextual Info: 2N7002BKV 60 V, 340 mA dual N-channel Trench MOSFET Rev. 2 — 22 September 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET

Dual N-Channel mosfet sot-363

Abstract: marking code k7k DMN601DWK DMN601DWK-7 marking code k7k transistor
Contextual Info: DMN601DWK NEW PRODUCT Lead-free Green DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • • • • Dual N-Channel MOSFET SOT-363 Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Min Max A 0.10 0.30

marking s1 sot363

Abstract: DMN601DWK DMN601DWK-7
Contextual Info: DMN601DWK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage

DMN5L06DMK

Contextual Info: DMN5L06DMK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Mechanical Data N EW PRODU CT Features • • • • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage 1.0V max Low Input Capacitance

DMN5L06DMK

Contextual Info: DMN5L06DMK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage 1.0V max Low Input Capacitance

k7k transistor

Abstract: transistor k7k marking K7K transistor marking code k7k transistor
Contextual Info: DMN601DMK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed

smd transistor marking z8

Abstract: 771-2N7002BKM315
Contextual Info: 2N7002BKM 60 V, 450 mA N-channel Trench MOSFET Rev. 1 — 25 October 2010 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: 2N7002BKV 60 V, 340 mA dual N-channel Trench MOSFET Rev. 1 — 10 June 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET

Contextual Info: 2N7002BKV 60 V, 340 mA dual N-channel Trench MOSFET Rev. 2 — 22 September 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET