30MHZ TO 512MHZ Search Results

RFHA1003S2

Contextual Info: RFHA1003 RFHA1003 30MHz to 512MHz, 9W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology

RFHA1003SQ

Abstract: 30MHz to 512MHz
Contextual Info: RFHA1003 RFHA1003 30MHz to 512MHz, 9W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology

Contextual Info: RFHA1003 RFHA1003 30MHz to 512MHz, 9W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology

Contextual Info: RFHA1003 RFHA1003 30MHz to 512MHz, 9W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology

Gan hemt transistor RFMD

Abstract: DS111007 tl 4941
Contextual Info: RFHA1003 RFHA1003 30MHz to 512MHz, 9 W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology

rfha1003

Contextual Info: RFHA1003 RFHA1003 30 MHz to 512MHz, 9 W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology

RFHA1003S2

Contextual Info: RFHA1003 RFHA1003 9W GaN Wide-Band Power Amplifier 30MHz to 512MHz The RFHA1003 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density

TB217

Abstract: PORCELAIN
Contextual Info: May 16, 2012 TB217#3 Frequency=30-512MHz Pout=10W Gain=10dB Vds=28Vdc Idq=0.2A Efficiency=30 to 55% LP801 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com May 16, 2012 TB217#3 Gain/Efficiency vs Frequency: Vds=28Vdc, Idq=0.2A, Pout=10W

Contextual Info: polyfet rf devices PCM001A Power RF Amplifiers Power = 15.0 Watts Bandwidth = 30 to 512 Mhz Gain = 25.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The PCM001A is a 15 Watt, 2 stage high gain amplifier module covering a bandwidth of 30-512 Mhz. This compact module design is

Contextual Info: polyfet rf devices MADQ02 Power RF Amplifiers Power = 15.0 Watts Bandwidth = 30 to 512 Mhz Gain = 25.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The MADQ02 is a 15 Watt, 2 stage high gain amplifier module covering a bandwidth of 30-512 Mhz. This compact module design is

MBDQ01

Abstract: MDDQ02 30MHz to 512MHz
Contextual Info: polyfet rf devices MDDQ02 Power RF Amplifiers Power = 15.0 Watts Bandwidth = 30 to 512 Mhz Gain = 25.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The MDDQ02 is a 15 Watt, 2 stage high gain amplifier module covering a bandwidth of 30-512 Mhz. This compact module design is

mgdq01

Abstract: MBDQ01
Contextual Info: polyfet rf devices MGDQ01 Power RF Amplifiers Power = 15.0 Watts Bandwidth = 30 to 512 Mhz Gain = 25.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The MGDQ01 is a 15 Watt, 2 stage high gain amplifier covering a bandwidth of 30-512 Mhz using SMA connectors for RF in and out. This

MDDQ02

Abstract: module MBDQ01 15W20
Contextual Info: polyfet rf devices MDDQ02 Power RF Amplifiers Power = 15.0 Watts Bandwidth = 30 to 512 Mhz Gain = 25.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The MDDQ02 is a 15 Watt, 2 stage high gain amplifier module covering a bandwidth of 30-512 Mhz. This compact module design is

MADQ02

Abstract: module MBDQ01
Contextual Info: polyfet rf devices MADQ02 Power RF Amplifiers Power = 15.0 Watts Bandwidth = 30 to 512 Mhz Gain = 25.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The MADQ02 is a 15 Watt, 2 stage high gain amplifier module covering a bandwidth of 30-512 Mhz. This compact module design is

k117

Abstract: CT5001 T160-C4 VT30-90 Lorch DIODE S3l Equalizer 4000MHz L16 8pin varactor VT400
Contextual Info: BOWEI Content BOWEI INTEGRATED CIRCUITS CO.,LTD. LC Filter Outline Drawings- 2 Miniature LC Bandpass Filter- 9 Miniature LC Lowpass Filter - 15

VHF50HN

Abstract: is-50nx-c2 capacitor 10nj IS-B50LN-C2 IS-MR50LNZ 15 IS-50NX-C1 IS-B50LN-C1 wireless walkie talkie circuit IS-VU50HN IS-CT50HN
Contextual Info: G L O B A L L I G H T N I N G S O L U T I O N S PolyPhaser Corporation Product Catalog PRODUCT CATALOG ac Power Protectors dc Power Protectors Grounding Solutions Protected Bias-T dc Blocked Filters Combiner Protectors dc Blocked Single Transmitter Twisted Pair Cable Protectors

LR401

Abstract: TB-160 FLR401 tb160
Contextual Info: TB-160 LR401 Pin vs Pout Freq=30MHz Vds=28Vdc Idq=800ma 80 16.0 15.0 60 Pout P1dB=60W 14.0 40 13.0 Gain 20 Efficiency @60W= 50% 12.0 11.0 1 2 3 4 5 6 Pin in Watts TB-160 LR401 Pin vs Pout Freq=250MHz Vds=28Vdc Idq=800ma 100 15.0 P1dB=60W 14.5 80 14.0 60 13.5

S-AU16VH

Abstract: S-AU16H S-AU16L S-AU16SH
Contextual Info: RF POWER AMPLIFIER MODULE S-AU16H, AU16L, AU16SH,AU16VH UHF POWER AMPLIFIER MODULE Unit in nnn HANDY TRANSCEIVER 42±a25 MAXIMUM RATINGS <Tc=25°C) SYMBOL CHARACTERISTIC DC Supply Voltage UNIT RATING VCC 16 V DC Supply Voltage v C0N 16 V DC Supply Voltage

Contextual Info: Specification for a Switched 7 LC Filter Assembly MtronPTI P/N: SA0068 I. General & Electrical Requirements Parameter Minimum Frequency Cutoff Frequency Insertion Loss Rejection @ 2nd Harmonic Ultimate Attenuation, Over 1.0GHz to 1.5GHz Passband Signal Power, CW

L8821P

Abstract: LK421
Contextual Info: Polyfet RF Devices TB-170 L8821P->LK421 Pout vs Pin Freq=30MHz Vds=12.5Vdc Idq=1.2A 24 27.0 Linear @5W 18 26.0 Pout 12 25.0 Gain Efficiency @15W= 35% 6 24.0 23.0 0.02 0.04 Pin in Watts Page 1 0.06 0.08 0.1 Gain in dB Pout in Watts P1dB=14W Polyfet RF Devices

166A

Abstract: TB166A LQ801 FT50A-43 LB401 10nF R20 10K ohm TB166 C33-C38 30MHz to 512MHz
Contextual Info: Polyfet RF Devices TB-166A LQ801-> LB401 Gain/Efficiency vs Freq; Vds=28Vdc Idq=1.2A 30 100 27 90 24 80 Gain 21 70 15 Pout fixed at 60W 60 Efficiency 12 50 9 40 6 30 3 40 80 120 160 200 240 280 Freq in MHz 320 360 400 440 480 20 520 Eff in % Gain in dB 18

MSCQ01

Abstract: module rf amplifier 100w rf power amplifier 100w AMPLIFIER 2 MHZ 100W 150M 100W POWER AMPLIFIER RF power amplifier MHz
Contextual Info: polyfet rf devices MSCQ01 Power RF Amplifiers Power = 100.0 Watts Bandwidth = 30 to 512 Mhz Gain = 8.0 dB Vdd = 26.0 Volts 50 ohms Input/Output Impedance Description The MSCQ01 is a 100 Watt, single stage amplifier module covering a bandwidth of 30-512 Mhz. This compact module design is

LBM700A-85

Abstract: LBM041A512-85 LBM017A-85 LBM037A-85 LBM038A-85 LBM039A-85 LBM040A-85 LBM041A-85 chebyshev
Contextual Info: BOWEI LBM017A-85~LBM700A-85 Digitally tuned Hopping filter Frequency range：30~700MHz Digitally tuned Hopping filter BOWEI INTEGRATED CIRCUITS CO.,LTD. Features Tuning Control: 8 bit parallel（TTL Level compatible） Wide dynamic ：Input P-1 =30dBm 2 ploe 0.1dB Chebyshev Response

EPIRB

Abstract: SD2942 SD3933 class AB hf bipolar PD55015 SONAR car alarm SD57045 "class AB Linear" hf PD55035 sd2931 fm
Contextual Info: LDMOS in plastic packages HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications Freq. [MHz] Pout [W] Gain typ [dB] VDD [V] Class Eff. (Typ) [%] Package PD54003 500 3 12 7.5 AB 55 PowerSO-10RF• PD54008