32N60C Search Results
32N60C Price and Stock
IXYS Corporation IXGR32N60CIGBT 600V 45A ISOPLUS247 |
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IXGR32N60C | Tube |
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IXYS Corporation IXGT32N60CIGBT 600V 60A TO-268AA |
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IXGT32N60C | Tube |
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IXYS Corporation IXGH32N60CIGBT 600V 60A TO-247AD |
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IXGH32N60C | 60 |
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IXYS Corporation IXGR32N60CD1IGBT 600V 45A ISOPLUS247 |
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IXGR32N60CD1 | Tube |
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IXYS Corporation IXGH32N60CD1IGBT 600V 60A TO-247AD |
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32N60C Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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IXGH32N60C
Abstract: 32N60C IXGH32N60
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32N60C IC110 O-268 O-247 IXGH32N60C 32N60C IXGH32N60 | |
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Contextual Info: IXGR 32N60C HiPerFASTTM IGBT Lightspeed Series VCE IC25 VCE sat typ tfi typ ISOPLUS247TM package (Electrically Isolated Back Side) = 600 V = 45 A = 2.1 V = 55 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V |
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32N60C ISOPLUS247TM IC110 E153432 | |
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Contextual Info: IXGH 32N60CD1 IXGT 32N60CD1 HiPerFASTTM IGBT with Diode Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC90 TC = 90°C 32 A ICM TC = 25°C, 1 ms |
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32N60CD1 32N60CD1 O-247 O-268 | |
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Contextual Info: IXGR 32N60C HiPerFASTTM IGBT Lightspeed Series ISOPLUS247TM package VCE IC25 VCE sat typ tfi typ (Electrically Isolated Back Side) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous |
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32N60C ISOPLUS247TM IC110 247TM E153432 | |
32N60CD1Contextual Info: HiPerFASTTM IGBT with Diode IXGH 32N60CD1 IXGT 32N60CD1 Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC90 TC = 90°C 32 A ICM TC = 25°C, 1 ms |
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32N60CD1 32N60CD1 O-247 O-268 | |
KM10TContextual Info: HiPerFAST IGBT Lightspeed™ Series V CES IXGH 32N60C IXGT 32N60C ^C25 V CE sat typ ^ fity p 600 V 60 A 2.1 V 55 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings T j = 25°C to 150°C 600 V Tj = 25° C to 150° C; RQE = 1 MQ 600 V Continuous |
OCR Scan |
32N60C 32N60C O-247 KM10T | |
32N60CD1Contextual Info: HiPerFASTTM IGBT with Diode IXGH 32N60CD1 IXGT 32N60CD1 Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V Maximum Ratings IC25 TC = 25°C 60 A IC90 TC = 90°C 32 |
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32N60CD1 O-247 32N60CD1 | |
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Contextual Info: HiPerFASTTM IGBT LightspeedTM Series IXGH 32N60C IXGT 32N60C VCES IC25 VCE sat tfi typ = 600 V = 60 A = 2.5 V = 55 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 |
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32N60C 32N60C IC110 O-268 O-247 728B1 123B1 065B1 | |
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Contextual Info: HiPerFASTTM IGBT LightspeedTM Series IXGH 32N60C IXGT 32N60C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC110 TC = 110°C |
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32N60C O-268 IC110 O-247 | |
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Contextual Info: IXGH 32N60CD1 IXGT 32N60CD1 HiPerFASTTM IGBT with Diode VCE SAT typ tfi(typ) Light Speed Series Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C |
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32N60CD1 O-247 | |
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Contextual Info: a ix Y S Advanced Technical Information IXGH 32N60CD1 VCES IC25 HiPerFAST IGBT with Diode V CE SAT typ Light Speed Series Symbol t f1(typ) Test Conditions Maximum Ratings =25° C to 150° C 600 V T, : 25°C to 150°C: FL 600 V Continuous ±20 V Transient |
OCR Scan |
32N60CD1 O-247AD O-247AD | |
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Contextual Info: IXGR 32N60C HiPerFASTTM IGBT Lightspeed Series VCE IC25 VCE sat tfi typ ISOPLUS247TM package (Electrically Isolated Back Side) = 600 V = 45 A = 2.7 V = 55 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR |
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32N60C ISOPLUS247TM IC110 247TM | |
32N60CD1Contextual Info: HiPerFASTTM IGBT with Diode ISOPLUS247TM VCES IC25 IXGR 32N60CD1 = 600 V = 45 A = 2.7 V = 55 ns VCE SAT tfi(typ) (Electrically Isolated Backside) Preliminary data sheet Maximum Ratings ISOPLUS 247TM (IXGR) E 153432 Symbol Test Conditions VCES TJ = 25°C to 150°C |
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ISOPLUS247TM 32N60CD1 2x31-06B 32N60CD1 | |
2x31-06BContextual Info: HiPerFASTTM IGBT with Diode ISOPLUS247TM IXGR 32N60CD1 VCES IC25 VCE SAT typ tfi(typ) (Electrically Isolated Backside) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V |
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ISOPLUS247TM 32N60CD1 247TM 2x31-06B 2x31-06B | |
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Contextual Info: IXGR 32N60C HiPerFASTTM IGBT Lightspeed Series VCE IC25 VCE sat tfi typ ISOPLUS247TM package (Electrically Isolated Back Side) = 600 V = 45 A = 2.7 V = 55 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR |
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32N60C ISOPLUS247TM IC110 247TM | |
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Contextual Info: IXGR 32N60C HiPerFASTTM IGBT Lightspeed Series VCE IC25 VCE sat tfi typ ISOPLUS247TM package (Electrically Isolated Back Side) = 600 V = 45 A = 2.7 V = 55 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR |
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ISOPLUS247TM IC110 32N60C 728B1 123B1 065B1 | |
ge motor 752
Abstract: IXGH32N60
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OCR Scan |
32N60C 32N60C O-268 O-247 ge motor 752 IXGH32N60 | |
32N60CD1
Abstract: 30-1000T
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32N60CD1 O-247 32N60CD1 30-1000T | |
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Contextual Info: HiPerFASTTM IGBT with Diode ISOPLUS247TM IXGR 32N60CD1 VCES IC25 VCE SAT typ tfi(typ) (Electrically Isolated Backside) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V |
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ISOPLUS247TM 32N60CD1 247TM 2x31-06B | |
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Contextual Info: □ IXYS H H ifl JL æ* X IXGH 32N60CD1 HiPerFAST IGBT with Diode VCES I C25 VCE SAT typ tf1(typ) Light Speed Series V A V ns 600 60 2.1 55 Preliminary data sheet Maximum Ratings Symbol Test Conditions V CES T j = 25°C to 150°C 600 V V CGR T j = 25°C to 150°C; RGE = 1 M£i |
OCR Scan |
32N60CD1 | |
20-600TContextual Info: HiPerFASTTM IGBT with Diode ISOPLUS247TM VCES IC25 IXGR 32N60CD1 = 600 V = 45 A = 2.7 V = 55 ns VCE SAT tfi(typ) (Electrically Isolated Backside) Preliminary data sheet Maximum Ratings ISOPLUS 247TM (IXGR) E 153432 Symbol Test Conditions VCES TJ = 25°C to 150°C |
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ISOPLUS247TM 32N60CD1 2x31-06B 20-600T | |
32N60CD1
Abstract: diode fr 307
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32N60CD1 O-247 32N60CD1 diode fr 307 | |
32N60CD1Contextual Info: HiPerFASTTM IGBT with Diode ISOPLUS247TM = 600 V = 45 A = 2.1 V = 55 ns VCES IC25 IXGR 32N60CD1 VCE SAT typ tfi(typ) (Electrically Isolated Backside) Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ |
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ISOPLUS247TM 32N60CD1 Featu150 32N60CD1 | |
IXGR32N60CD1Contextual Info: □ TXYS HHifl JLæ* 3k. X HiPerFAST IGBT with Diode ISOPLUS247™ IXGR 32N60CD1 = 600 V = 45 A = 2.1 V = 55 ns V,CES IC25 V CE SAT typ ^fi(typ) (Electrically Isolated Backside) Preliminary data sheet Symbol TestC onditions V C ES Tj = 25°C to 150°C 600 |
OCR Scan |
ISOPLUS247â 32N60CD1 IXGR32N60CD1 IXGR32N60CD1 | |