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    IXGH32N60 Price and Stock

    IXYS Corporation IXGH32N60B

    IGBT 600V 60A 200W TO247AD
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    IXYS Corporation IXGH32N60C

    IGBT 600V 60A 200W TO247AD
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    Bristol Electronics IXGH32N60C 60
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    Quest Components IXGH32N60C 48
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    IXYS Corporation IXGH32N60CD1

    IGBT 600V 60A 200W TO247AD
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    IXYS Corporation IXGH32N60BD1

    IGBT 600V 60A 200W TO247AD
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    IXYS Corporation IXGH32N60BU1

    IGBT 600V 60A 200W TO247AD
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    IXGH32N60 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXGH32N60A IXYS 600V HiPerFAST IGBT Original PDF
    IXGH32N60AA IXYS 600V HiPerFAST IGBT Original PDF
    IXGH32N60AS IXYS 600V HiPerFAST IGBT Original PDF
    IXGH32N60AU1 IXYS Hiperfast IGBT With Diode Combi Pack Original PDF
    IXGH32N60AU1S IXYS HiPerFAST IGBT with Diode Combi Pack Original PDF
    IXGH32N60B IXYS IGBT for AC motor speed control and DC servo and robot drives applications, 600V, 60A, 80ns Original PDF
    IXGH32N60BD1 IXYS 600V HiPerFAST IGBT with diode Original PDF
    IXGH32N60BD1 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 60A 200W TO247AD Original PDF
    IXGH32N60BU1 IXYS IGBT for AC motor speed control and DC servo and robot drives applications, 600V, 60A, 80ns Original PDF
    IXGH32N60C IXYS 600V HiPerFAST IGBT Original PDF
    IXGH32N60CD1 IXYS 600V HiPerFAST IGBT with diode Original PDF

    IXGH32N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXGH32N60BU1

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT with Diode IXGH32N60BU1 VCES IC25 VCE sat tfi Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW 600 V = = = = 600 V 60 A 2.5V 80 ns TO-247 AD VGES Continuous ±20 V VGEM Transient


    Original     		PDF IXGH32N60BU1 O-247 IXGH32N60BU1

    IXGH32N60B

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT Symbol Test Conditions IXGH32N60B VCES IC25 VCE sat tfi Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC90 TC = 90°C 32 A ICM


    Original     		PDF IXGH32N60B O-247 32N60B 32N60BU1 IXGH32N60B

    Untitled

    Abstract: No abstract text available
    Text: IXGH32N60AU1 Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V)20 I(C) Max. (A)60# Absolute Max. Power Diss. (W)200# Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case.62 Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.15


    Original     		PDF IXGH32N60AU1 delay25nà time30nà time175n

    IXGH32N60B

    Abstract: 32N60BU1 32N60B 95566B IXGH32N60 TO-247 AD
    Text: HiPerFASTTM IGBT Symbol Test Conditions IXGH32N60B VCES IC25 VCE sat tfi Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC90 TC = 90°C 32 A ICM


    Original     		PDF IXGH32N60B O-247 32N60B 32N60BU1 IXGH32N60B 95566B IXGH32N60 TO-247 AD

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT with Diode IXGH32N60BU1 VCES IC25 VCE sat tfi Maximum Ratings = = = = 600 V 60 A 2.5V 80 ns TO-247 AD Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient


    Original     		PDF IXGH32N60BU1 O-247

    IXGH32N60C

    Abstract: 32N60C IXGH32N60
    Text: HiPerFASTTM IGBT LightspeedTM Series IXGH 32N60C IXGT 32N60C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC110 TC = 110°C


    Original     		PDF 32N60C IC110 O-268 O-247 IXGH32N60C 32N60C IXGH32N60

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


    Original     		PDF 2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312

    IXGD32N60B-5X

    Abstract: ixgh45n120 IXGH24N60B IXGH50N60B IXGH32N60B
    Text: Insulated Gate Bipolar Transistors IGBT-Chips Type VCES VCE sat @ IC Cies typ. tfi typ. ns Chip type Chip size dimensions High Speed Low VCE(sat) TJM = 150°C mm Source bond wire recommend Equivalent device data sheet Dim. outline No. V V A pF mils IXGD28N30-43


    Original     		PDF IXGD28N30-43 IXGD40N30-5X IXGD12N60B-3X IXGD31N60-4X IXGD41N60-5X IXGD60N60-7Y IXGD200N60B-9X IXGD2N100-1M IXGD4N100-1T IXGD8N100-2L IXGD32N60B-5X ixgh45n120 IXGH24N60B IXGH50N60B IXGH32N60B

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT LightspeedTM Series IXGH 32N60C IXGT 32N60C VCES IC25 VCE sat tfi typ = 600 V = 60 A = 2.5 V = 55 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600


    Original     		PDF 32N60C 32N60C IC110 O-268 O-247 728B1 123B1 065B1

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT LightspeedTM Series IXGH 32N60C IXGT 32N60C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC110 TC = 110°C


    Original     		PDF 32N60C O-268 IC110 O-247

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT with Diode IXGH 32N60BU1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V TC = 25°C 60 A IC90 TC = 90°C 32 A ICM TC = 25°C, 1 ms


    Original     		PDF 32N60BU1 O-247 IXGH32N60BU1 728B1

    BC 247 B

    Abstract: IXGH32N60 IXGH32N60CD1 DIODE SMD GEM
    Text: □ IXYS ADVANCED TECHNICAL INFORMATION IXGH32N60CD1 IXGH32N60CD1S HiPerFAST IGBT with Diode ^fi typ Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20 V V GEM Transient ±30 V ^C25


    OCR Scan     		PDF IXGH32N60CD1 IXGH32N60CD1S O-247 32N60CD1S) BC 247 B IXGH32N60 DIODE SMD GEM

    IXGH32N60C

    Abstract: 610MJ
    Text: Advanced Data _ HiPerFAST IGBT Lightspeed™ Series vCES IXGH32N60C IXGH32N60CS 600 V 60 A 2.1 V 55 ns ^C25 vCE sat typ * fi typ 4 Symbol Test Conditions V • ces TJ vcaR C Maximum Ratings 25°C to 150°C 600 V Tj = 25°C to 150°C; RGE = 1 M£3


    OCR Scan     		PDF IXGH32N60C IXGH32N60CS O-247 32N60CS) O-247AD O-247 610MJ

    smd diode 819

    Abstract: rg33c
    Text: Preliminary Data Sheet IXGH32N60BU1 IXGH32N60BU1S HiPerFAST IGBT with Diode V CES ^C25 V CE sat Combi Pack ^fi ?C = = = = 600 V 60 A 2.5V 80 ns G OE Symbol TestConditions v CES Td = 25°C to 150°C 600 V v CGR Td = 25°C to 150°C; RGE = 1 Mil 600 V VGES


    OCR Scan     		PDF IXGH32N60BU1 IXGH32N60BU1S T0-247 O-247 smd diode 819 rg33c

    IXGH32N60C

    Abstract: No abstract text available
    Text: □ IXYS HiPerFAST IGBT Lightspeed™ Series IXGH32N60C IXGH32N60CS VCES IC25 V CE sat typ tfity p 600 V 60 A 2.1 V 55 ns Prelim inary Data Sheet Symbol TestConditions Maximum Ratings v CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i


    OCR Scan     		PDF IXGH32N60C IXGH32N60CS O-247

    1xgh32

    Abstract: IXGH32N60B
    Text: Preliminary Data Sheet HiPerFAST IGBT IXGH32N60B IXGH32N60BS VCES ^C25 VCE sat t, Symbol Test Conditions V OES Td = 25°C to 150°C 600 V v CGR Td = 25°C to 150°C; RGE = 1 MO 600 V VGES Continuous ±20 V V OEM Transient ±30 V 60 A ^C90 Tc = 25°C Tc = 90°C


    OCR Scan     		PDF IXGH32N60B IXGH32N60BS T0-247 32N60BS) 1xgh32

    32N60B

    Abstract: 32N60BU1 IXGH32N60B
    Text: □IX Y S j Prelim inary Data Sheet HiPerFAST IGBT IXGH32N60B IXGH32N60BS VCES ^C25 V CE sat tfi < Symbol Test Conditions V CES TJ = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 Mi2 600 V v* GES v GEM Continuous ±20 V T ransient ±30 V Maximum Ratings


    OCR Scan     		PDF IXGH32N60B IXGH32N60BS 13/IONm/lb O-247 4bflb22b 32N60B 32N60BU1

    smd diode UJ 64 A

    Abstract: cz 017 v3
    Text: □IX Y S Preliminary Data Sheet IXGH32N60BU1 IXGH32N60BU1S HiPerFAST IGBT with Diode tfi Test Conditions VCES Tj = 25 °C to 150°C 600 V V CGR Tj = 25 °C to 150°C; RGE = 1 M ii 600 V v GES Continuous ±20 V VGEM Transient ±30 V *C25 Tc = 25 °C ^C90


    OCR Scan     		PDF IXGH32N60BU1 IXGH32N60BU1S O-247 4bflb22b smd diode UJ 64 A cz 017 v3

    ixgh32n60

    Abstract: MJ170
    Text: HiPerFAST IGBT Lightspeed™ Series IXGH32N60C IXGH32N60CS v CES ^C25 VCE sat typ ^fity p 600 V 60 A 2.1 V 55 ns Preliminary Data Sheet Symbol Test Conditions ^C E S Tj = 25°C to 150°C 600 V T j = 25°C to 150°C; RGE = 1 MQ 600 V v CGR Maximum Ratings


    OCR Scan     		PDF IXGH32N60C IXGH32N60CS O-247 32N60CS) ixgh32n60 MJ170

    smd diode 819

    Abstract: No abstract text available
    Text: HiPerFAST IGBT with Diode IXGH 32N60AU1 IXGH 32N60AU1S CES C25 v CE sat t Symbol Test Conditions V * CES Tj = 25°C to 150°C 600 V vt cgr Tj = 25°C to 150°C; RGE = 1 M n 600 V Maximum Ratings v GES Continuous ±20 V v GEM Transient +30 V ^C25 Tc = 25“C


    OCR Scan     		PDF IXGH32N60AU1 IXGH32N60AU1S O-247 32N60AU1S) IXGH32N60AU1 IXQH32N60AU1S XGH32N60AU1 smd diode 819

    IXGD40N60A

    Abstract: 1XGH10N60 xgh10n60a IXGD30N60 IXGD10N60 IXGH40N60 IXGH50N60A 1X57 IXGD40N60 IXGH60N60
    Text: IXYS Insulated Gate Bipolar Transistors IGBT-Chips Type e» High Speed Low T j. s is ir c £ tn typ 28°C ns C hip typ V V A S* IXGD28N30 IXGD40N30 300 1.8 1.45 20 20 1500 2500 180 220 1X43 1X57 IXGD10N60 IXGD20N60 IXGD31N60 IXGD30N60 IXGD38N60 IXGD40N60


    OCR Scan     		PDF IXGD28N30 IXGD40N30 IXGD10N60 IXGD20N60 IXGD31N60 IXGD30N60 IXGD38N60 IXGD40N60 IXGD60N60 IXGD200N60 IXGD40N60A 1XGH10N60 xgh10n60a IXGH40N60 IXGH50N60A 1X57 IXGH60N60

    KM10T

    Abstract: No abstract text available
    Text: HiPerFAST IGBT Lightspeed™ Series V CES IXGH 32N60C IXGT 32N60C ^C25 V CE sat typ ^ fity p 600 V 60 A 2.1 V 55 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings T j = 25°C to 150°C 600 V Tj = 25° C to 150° C; RQE = 1 MQ 600 V Continuous


    OCR Scan     		PDF 32N60C 32N60C O-247 KM10T

    Untitled

    Abstract: No abstract text available
    Text: IXGH 32N60A IXGH 32N60AS HiPerFAST IGBT = = = = CES v C25 CE sat tfi 600 V 60 A 2.9 V 125 ns *4 $ Maximum IRatings Symbol Test Conditions VCES Tj = 25°C to 150°C 600 V V CQR Tj = 25°C to 150°C; RGE = 1 M£2 600 V v GES Continuous ±20 V v GEM Transient


    OCR Scan     		PDF 32N60A 32N60AS O-247 32N60AS) Hbflb25b