340N07 Search Results

Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 340N07 RDS on trr D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID25 = 70 V = 340 A = 4 mW < 250 ns G Preliminary data S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 340N07 VDSS ID25 RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr £ 250ns G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 70 V VDGR TJ = 25°C to 150°C; RGS = 1 MW

Contextual Info: nixYS AdvancedTechnical Information HiPerFET Power MOSFETs Single Die MOSFET IXFN 340N07 70 V 340 A ^D25 = R — 4 mQ DS on ” t. < 250 ns DSS N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions V DSS T j =25°C to150°C

Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 340N07 VDSS ID25 RDS on = 70 V = 340 A Ω = 4 mΩ trr ≤ 200 ns D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S Symbol Test Conditions S Maximum Ratings VDSS TJ = 25°C to 150°C 70 V

Contextual Info: n ix Y S Advanced Technical Information HiPerFET Power MOSFETs Single Die MOSFET IXFN 340N07 VDSS ^D25 R DS on trr N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr 70 V — 340 A 4 mQ < 250 ns s Maximum Ratings Symbol Test Conditions V v DSS

340N07

Abstract: max8098
Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 340N07 VDSS ID25 RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr µs trr ≤ 200µ G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 70 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

340N07

Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 340N07 VDSS ID25 RDS on = 70 V = 340 A Ω = 4 mΩ trr ≤ 200 ns D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 70 V

Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 340N07 RDS on trr D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID25 = 70 V = 340 A = 4 mW < 250 ns G Preliminary data S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

max8098

Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 340N07 VDSS ID25 RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr µs trr ≤ 200µ G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 70 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 340N07 VDSS ID25 RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr µs trr ≤ 200µ G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 70 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

Siemens DIODE E 1240

Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 340N07 VDSS ID25 RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr < 200ns G S Symbol Test Conditions S Maximum Ratings VDSS TJ = 25°C to 150°C 70 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

340N07

Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 340N07 VDSS ID25 RDS on t rr D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 70 V VDGR

Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 340N07 RDS on trr D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID25 = 70 V = 340 A = 4 mW < 250 ns G Preliminary data S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

C1162

Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)

7n60b

Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Contextual Info: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches

C1146

Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)

52N30

Abstract: 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50
Contextual Info: HiPerFET Power MOSFETs LowGa>°-c,ar rypes- - s » F series - Avalanche ruggedness with Fast Intrinsic Diode p > Type *D(25 c r38 typ. V max. typ. max. max. fi PF PF ns nC K/W W E T jm = 150"C ► New V Tc = 25°C 76 0.011 4400 1200 100 240 0.42 360 70

C1218

Abstract: C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10
Contextual Info: HiPerFET F-Series - . IXYS - - . •■ ■ ■ »♦ ■■ * 3* ■ V . Contents v DSS max V D ^CKcont DS on) Tc = 25 °C Tc = 25 °C A a TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247™ (IXFR) TO-268

DSE 130 -06A

Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
Contextual Info: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01