348 MOSFET Search Results

LE334

Abstract: VEA335
Contextual Info: T±0.5 Customer Trust Company H±0.5 W±0.5 30min. F±1.0 φ d±0.05 フィルムコンデンサ FILM CAPACITORS QMS EMS JIS Q 9001 JIS Q 14001 JSAQ 026 JSAE 348 Customer Trust Company 顧客に安心 そして信頼いただける企業実現をめざして

1XTH5N100

Abstract: xth6n90 IRFP460 equivalent IXTH7P50 ixth10p50
Contextual Info: lOIXYS_ Standard Power MOSFET and MegaMOS FET Chips N-Channel Enhancement-Mode Type Vwa ÖWL T r ia r e V V 1 M * A iijfit CMpsiza dimensions S o w n OP bvftdw trft iw a in w id Equivalent «M ae Own. out­ line No mm mils IXTD67N10 IXTD75N10

IXFD14N80

Abstract: CMP 3.48 ixfh50n20 1XFH12N90 IXFN170N10 diode 348 IXFD110N20 IXFD76N07-12 IXFD21N50 IXFH21N50
Contextual Info: OIXYS HiPerFET Power MOSFET Chips N-Channel Enhancement-Mode with Fast Intrinsic Diode Type v c * D6S tN BL tn CMp max *yp * Chip elze Source 3 b e n tlw li« Equivalent device dutaahaet T * * tS O * G out­ line NO PF na 70 0.012 5 4400 200 IX77 8 .8 4 x 7 .1 9

POWER MOSFET 4600

Abstract: MOSFET 4600 4600 mosfet IXFD80N20Q-8X IXFD40N30-7X IXFX90N20Q 1219X IXFN80N50 IXFn44N80 IXFN39N90
Contextual Info: HiPerFET Power MOSFET Chips N-Channel Enhancement-Mode with Fast Intrinsic Diode B Type " dbmm e«» m ax. m ax. m ax. Chip typ * Chip sue cHmehsfons Tm = 150°C V Q A 1XFD76N07-7X IXFD180N07-9X IXFD340N07-9Y 70 0.012 0.006 0.004 IXFD67N10-7X XFD75N10-7X

IRFP260 equivalent

Abstract: IXTD1N80-1T irfp450 equivalent Irfp250 irfp460 IRFP460 equivalent IXTD50N20-7X IXTD05N100-1T IXTD67N10-7X x315 IRFP254 equivalent
Contextual Info: Standard Power MOSFET and MegaMOSTMFET Chips N-Channel Enhancement-Mode Type VDSS max. TJM = 150°C RDS on @ ID max. Ciss typ. trr typ. V Ω IXTD67N10-7X IXTD75N10-7X 100 0.025 0.02 5 5 3700 3700 300 300 IXTD42N20-7X IXTD50N20-7X IFRC250-5X IFRC260-6X 200

IXTH40N25

Abstract: irfp450 equivalent IXTH7P50 IXTH12N90 IXTD50N20-7X IXTD11N80 IRFP460 equivalent
Contextual Info: Standard Power MOSFET and MegaMOS FET Chips N-Channel Enhancement-Mode Type V *BSS m ax. e * m ax. typ- typ. Chip type C hips» se «18 Source Ct bond w ire T j.s lS O 'C V - datasheet Q ns mm Dim. out­ line No. mfts IXTD67N10-7X IXTD75N10-7X 100 0.025

IXFH32N50Q equivalent

Abstract: ixfk24n100 IXFD80N20Q-8X IXFN80N50 1672 mos-fet IXFH40N30
Contextual Info: HiPerFETTM Power MOSFET Chips N-Channel Enhancement-Mode with Fast Intrinsic Diode Type VDSS max. TJM = 150°C RDS on @ ID max. Ciss trr max. Chip type Chip size dimensions Source ¬ bond wire recommend Equivalent device data sheet Dim. outline No. V Ω

IXFD21N100F-8F

Abstract: IXFD38N100Q2-95 DIODE 1581 IXYS IXFK21N100Q IXFH40N30 IXFH40N50Q IXFK38N80Q2 7Y 6 IXFB50N80Q2 IXFN80N50
Contextual Info: Chip-Shortform2004.pmd HiPerFETTM Power MOSFET Type VDSS max. RDS ON max. Chip type Chip size dimensions Source bond wire recommended Equivalent device data sheet 8 26.10.2004, 12:44 V Ω mm mils IXFD76N07-7X IXFD180N07-9X IXFD340N07-9Y 70 0.015 0.007 0.005

IXTD24P20

Abstract: depletion mode mosfet 01N100D-1M DEPLETION P-Channel Depletion Mosfet IXTH36P10 IXTD24P20-7B IXTD36P10-5B P-Channel Depletion Mosfets IXTH50P10
Contextual Info: Chip-Shortform2004.pmd N-Channel Depletion Mode MOSFET Type VDSS max. RDSon max. Chip type Chip size dimensions Source bond wire recommended Equivalent device data sheet 12 V Ω mm mils IXTD 02N50D-1M 500 30 1M 1.96 x 1.68 77 x 66 3 mil x 1 IXTP 02N50D IXTD 01N100D-1M

diode 348

Abstract: 9840 diode APT50M50L2LL 085mh
Contextual Info: APT50M50L2LL 500V 87A 0.050W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses

BQFN REEL TEXAS

Abstract: TPS84610
Contextual Info: TPS84610 SLVSAZ4 – OCTOBER 2011 www.ti.com 2.95-V to 6-V Input, 6-A Synchronous Buck, Integrated Power Solution Check for Samples: TPS84610 FEATURES 1 • • • • • • • • • • • • • • Complete Integrated Power Solution Allows Small Footprint, Low-Profile Design

APTM120H29FG

Abstract: APT0502 APT0601
Contextual Info: APTM120H29FG Full - Bridge MOSFET Power Module VDSS = 1200V RDSon = 290mΩ typ @ Tj = 25°C ID = 34A @ Tc = 25°C Application VB US • • • • Q3 Features S3 Q2 Q4 • G2 G4 S2 S4 0/VBUS • • OUT1 G1 VBUS G2 0/VBUS S1 S2 S3 S4 G3 G4 OUT2 • Power MOS 7 FREDFETs

APT0501

Abstract: APT0502 APTM120DU29TG APT0406
Contextual Info: APTM120DU29TG Dual Common Source MOSFET Power Module Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies D2 Q2 G1 G2 S1 S2 S NTC1 NTC2 G2 S2 D1 S Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package

Contextual Info: APTM120DU29TG Dual Common Source MOSFET Power Module D1 Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies D2 Q1 Q2 G1 G2 S1 S2 S NTC1 NTC2 G2 S2 D1 S VDSS = 1200V RDSon = 290mΩ typ @ Tj = 25°C ID = 34A @ Tc = 25°C

Contextual Info: LMZ30606 www.ti.com SNVS995 – JULY 2013 6A SIMPLE SWITCHER Power Module with 2.95V-6V Input in QFN Package Check for Samples: LMZ30606 FEATURES 1 • 2 • • • • • • • • • • • • • • Complete Integrated Power Solution Allows Small Footprint, Low-Profile Design

Contextual Info: LMZ30604 www.ti.com SNVS998 – JULY 2013 4A SIMPLE SWITCHER Power Module with 2.95V-6V Input in QFN Package Check for Samples: LMZ30604 FEATURES DESCRIPTION • The LMZ30604 SIMPLE SWITCHER® power module is an easy-to-use integrated power solution that

TPS84610

Contextual Info: TPS84610 SLVSAZ4 – OCTOBER 2011 www.ti.com 2.95-V to 6-V Input, 6-A Synchronous Buck, Integrated Power Solution Check for Samples: TPS84610 FEATURES 1 • 2 • • • • • • • • • • • • • • Complete Integrated Power Solution Allows

Contextual Info: LMZ30604 www.ti.com SNVS998 – JULY 2013 4A SIMPLE SWITCHER Power Module with 2.95V-6V Input in QFN Package Check for Samples: LMZ30604 FEATURES DESCRIPTION • The LMZ30604 SIMPLE SWITCHER® power module is an easy-to-use integrated power solution that

Contextual Info: LMZ30606 www.ti.com SNVS995 – JULY 2013 6A SIMPLE SWITCHER Power Module with 2.95V-6V Input in QFN Package Check for Samples: LMZ30606 FEATURES 1 • 2 • • • • • • • • • • • • • • Complete Integrated Power Solution Allows Small Footprint, Low-Profile Design

Contextual Info: APTM120DA29TG Boost chopper MOSFET Power Module Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction NTC2 VBUS VBUS SENSE CR1 Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance

ELECTROLYTIC CAPACITORS 220uF 25V

Abstract: electrolytic capacitor 2200uF SANYO
Contextual Info: TPS84410 www.ti.com SLVSAR5A – SEPTEMBER 2011 – REVISED MARCH 2012 2.95-V to 6-V Input, 4-A Synchronous Buck, Integrated Power Solution Check for Samples: TPS84410 FEATURES DESCRIPTION • The TPS84410RKG is an easy-to-use integrated power solution that combines a 4-A DC/DC converter

TPS84610

Contextual Info: TPS84610 SLVSAZ4 – OCTOBER 2011 www.ti.com 2.95-V to 6-V Input, 6-A Synchronous Buck, Integrated Power Solution Check for Samples: TPS84610 FEATURES 1 • 2 • • • • • • • • • • • • • • Complete Integrated Power Solution Allows

Contextual Info: TPS84410 www.ti.com SLVSAR5A – SEPTEMBER 2011 – REVISED MARCH 2012 2.95-V to 6-V Input, 4-A Synchronous Buck, Integrated Power Solution Check for Samples: TPS84410 FEATURES DESCRIPTION • The TPS84410RKG is an easy-to-use integrated power solution that combines a 4-A DC/DC converter

Contextual Info: TPS84410 SLVSAR5 – SEPTEMBER 2011 www.ti.com 2.95-V to 6-V Input, 4-A Synchronous Buck, Integrated Power Solution Check for Samples: TPS84410 FEATURES DESCRIPTION • The TPS84410RKG is an easy-to-use integrated power solution that combines a 4-A DC/DC converter