350NM Search Results

405nm photodiode

Abstract: 780nm led 1 mw SFH2332 photodiode 650nm nep photodiode dvd cd GEOY6653 OHLY0598 405nm LED Q65110A6342 photodiode bluray
Contextual Info: Schnelle PIN-Fotodiode High Speed PIN Photodiode Lead Pb Free Product - RoHS Compliant SFH 2332 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen von 350nm bis 780nm • Sehr kurze Schaltzeit im spezifizierten Wellenlängenbereich • Sehr kurze Schaltzeiten bei geringer

350nm bis 700

Abstract: photodiode bluray
Contextual Info: Schnelle PIN-Fotodiode High Speed PIN Photodiode Lead Pb Free Product - RoHS Compliant SFH 2332 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen von 350nm bis 780nm • Sehr kurze Schaltzeit im spezifizierten Wellenlängenbereich • Sehr kurze Schaltzeiten bei geringer

Contextual Info: Schnelle PIN-Fotodiode High Speed PIN Photodiode Lead Pb Free Product - RoHS Compliant SFH 2332 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen von 350nm bis 780nm • Sehr kurze Schaltzeit im spezifizierten Wellenlängenbereich • Sehr kurze Schaltzeiten bei geringer

osram bpx 65 photodiode

Contextual Info: Silizium-PIN-Fotodiode Silicon PIN Photodiode Lead Pb Free Product - RoHS Compliant BPX 65 Wesentliche Merkmale Features • Wellenlängenbereich (S10%) 350nm bis 1100nm • Kurze Schaltzeit (typ. 12 ns) • Hermetisch dichte Metallbauform (TO-18), geeignet bis 125 oC

tci 571

Abstract: GMOY6011 OHLY0598 Q62702P0885
Contextual Info: Silicon Photodiode for the Visible Spectral Range Silicon Photodiode for the Visible Spectral Range Lead Pb Free Product - RoHS Compliant BPW 21 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 350nm bis 820nm • Angepaßt an die Augenempfindlichkeit (Vλ)

Contextual Info: Silicon Photodiode for the Visible Spectral Range Silicon Photodiode for the Visible Spectral Range Lead Pb Free Product - RoHS Compliant BPW 21 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 350nm bis 820nm • Angepaßt an die Augenempfindlichkeit (Vλ)

BPW21

Abstract: Q62702P0885 GMOY6011 OHLY0598
Contextual Info: Silicon Photodiode for the Visible Spectral Range Silicon Photodiode for the Visible Spectral Range Lead Pb Free Product - RoHS Compliant BPW 21 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 350nm bis 820nm • Angepaßt an die Augenempfindlichkeit (Vλ)

UV diode 320 nm

Abstract: uv photodiode PDU-G102B uv photodiode wavelength 250 to 260 320nm
Contextual Info: UV Enhanced GaN Detectors PDU-G102B PACKAGE DIMENSIONS INCH [mm] Ø.210 [5.35] QUARTZ WINDOW FILTER CAP WELDED Ø.118 [3.00] .055 [1.40] VIEWING ANGLE 61° CHIP ANODE 2X Ø.017 [0.43] .100 [2.54] .500 [12.70] Ø.181 [4.60] .112 [2.84] CATHODE CHIP DIMENSIONS INCH [mm]

TSMC 180nm dual port sram

Abstract: TSMC 90nm sram tsmc 180nm sram voltage regulator I2C 10GBASE-T TSMC 90nm flash energy consumption in DVS TN1010 120C ARM926EJ-S
Contextual Info: PowerWise Adaptive Voltage Scaling AVS Technology Webinar Rick Zarr, PowerWise® Technologist Joy Taylor, Marketing Manager Feb 25, 2009 Webinar Objectives • Review power consumption of digital subsystems in various applications • Discuss PowerWise® Adaptive Voltage Scaling (AVS)

R758

Abstract: R636 R636-10 TPMSA0027EC R758-10
Contextual Info: PHOTOMULTlPLlER TUBES R636–10, R758–10 UV to Near IR R636–10:185 to 930 nm, R758–10:160 to 930nm Spectral Response 28mm(1-1/8 Inch) Diameter, GaAs(Cs) Photocathode, 9-stage,Side-On Type GENERAL Parameter Spectral Response Wavelength of Maximum Response

photodiode amplifier

Abstract: smoke detector schematic schematic SMPX160 pickup photodiode photodiode bias circuit
Contextual Info: SMPX160 SILICON PIN PHOTODIODE HYBRIDS THE SMPX160 HYBRID PHOTODIODE 0.66mm2 WITH INTEGRAL AMPLIFIER AND BG18 OPTICAL FILTER MECHANICAL DATA Dimensions in mm 8.9mm 5.9mm 25.0mm Pin1 Pin2 Pin4 Pin3 FEATURES: 8.2mm • HIGH RESPONSIVITY • PHOTODIODE SIZE: 1 x 1 mm note 1

infra red sensors

Abstract: Aspheric Lens TO Can bandpass filter PLC biconvex lens
Contextual Info: SYSTEMS DIVISION PLASTIC OPTICAL COMPONENTS IMAGING AND NON-IMAGING PLASTIC OPTICAL COMPONENTS DESCRIPTION FEATURES: Due to customer requests Semelab has developed the capability to design and supply polymer based optical components. These devices can be used to complement the

hamamatsu photomultiplier R300

Abstract: 931A Hamamatsu Hamamatsu r300 6199 photomultiplier R300 pmt hamamatsu pmt R300 RCA 931-A Photomultiplier Tube Hamamatsu photomultiplier RCA 931A photomultiplier R928, hamamatsu
Contextual Info: CHAPTER 1 INTRODUCTION 2007 HAMAMATSU PHOTONICS K. K. 2 1.1 CHAPTER 1 INTRODUCTION Overview of This Manual The following provides a brief description of each chapter in this technical manual. Chapter 1 Introduction Before starting to describe the main subjects, this chapter explains basic photometric units used to measure

hamamatsu c1000

Abstract: A2098 transistor a2098 A4869 A4539 C1000-12 image intensifier quantum efficiency data 40VA A3472-50 UV led 200nm
Contextual Info: HIGH-SPEED GATED IMAGE INTENSIFIER UNITS C7244, C7245 Capturing still images of high-speed phenomena! C-mount adapter is optional. The Hamamatsu C7244 and C7245 are high-speed gated image intensifier units developed specifically for imaging of highspeed phenomena occurring at low light levels. These image intensifier units consist of an image intensifier head and its controller with a built-in high voltage power supply. The image intensifier head easily connects to the front of a CCD camera to configure a high-speed shutter camera that allows capturing still images of high-speed phenomena at any desired timing. The C7244

VCCD1024H

Abstract: Sarnoff Sarnoff Corporation ccd sensor back illuminated sarnoff uv ccd sensor 1000nm ir CCD-Sensor 300fps QE 45 frame transfer
Contextual Info: 1024 x 1024 CCD Sensor DESCRIPTION The Sarnoff 1024 x 1024 imager is a high p e rf o rmance, back illuminated CCD array designed for low noise operation from slow scan rates up to 300 frames per second full frame imaging. The imager uses vertical frame transfer architecture

Amplifier schematic diagrams 12v

Contextual Info: A dvanced P ho to nix , I nc . LARGE AREA AVALANCHE PHOTODIODES 631 and 641 Seiles cooled Modules PI’s solid state Large Area Avalanche Photodiodes LAAPD are available in easy to operate integrated modules. API’s 631 AC coupled and 641 DC coupled series

SM980

Contextual Info: Products & Services 2015 FIBERCORE FIBERCORE Contents SECTION SECTION PAGE 1 About Fibercore Which fiber for which application? 6 - 11 2 SM Fiber for Harsh Environments, Ultra Bend Insensitive, RGB and Near Infra Red SM Fiber For Visible RGB Through To Near IR

elis 1024 cmos

Abstract: ccd KE DIODE Photon Vision Systems PDS0004
Contextual Info: PDS0004 REV. 10/31/00 Photon Vision Systems High Performance Linear CMOS Image Sensors ELIS CMOS IMAGER P.O Box 509 Cortland, NY 13045. tel. 607.756.5200 fax 607.756.5319 The Photon Vision Systems ELIS is a family of high performance linear image sensor designed for a wide variety of applications as a superior

uv photodiode

Abstract: PDU-G102B 320nm
Contextual Info: UV Enhanced GaN Detectors PDU-G102B Advanced Photonix, Inc. PACKAGE DIMENSIONS INCH [mm] Ø.210 [5.35] .055 [1.40] 2X Ø.017 [0.43] Ø .118 [3.00] CATHODE VIEWING ANGLE 61° ANODE .100 [2.54] .500 [12.70] Ø.181 [4.60] .087 [2.21] CHIP CHIP DIMENSIONS INCH [mm]

UV flame detection

Abstract: ammeter GUVA-S20ED
Contextual Info: UV-A Photodetector GUVA-S20ED Features Gallium Nitride based material Schottky-type photodiode No cut-off filters needed Intrinsic visible blindness High responsivity Low dark current Designed to operate in photovoltaic mode SMD plastic package : 1.6 x 0.8 × 0.4 mm

mdd 2605

Abstract: HCPL 1458 8 pin opto KS0108 128X64 graphical LCD mdd 2601 transistor chn 952 hitachi INVC 618 Data Vision P135 H4 led smd headlight bulb transistor CHN 64 946 transistor chn 943
Contextual Info: 755 Technical portal and online community for Design Engineers - www.element-14.com Optoelectronics, Solid State Illumination & Displays Page Alphanumeric LCD Modules . . . . . . . . . . . . . . . . . 903 Alphanumeric LED Displays . . . . . . . . . . . . . . . . . 900

SPARC64

Abstract: 180NM 400M GS21 sparc64 gp
Contextual Info: SPARC64 VII Fujitsu’s Next Generation Quad-Core Processor August 26, 2008 Takumi Maruyama LSI Development Division Next Generation Technical Computing Unit Fujitsu Limited All Rights Reserved,Copyright FUJITSU LIMITED 2008 Fujitsu Processor Development

dad1000

Abstract: 1076-746c 1076-740c 1076-714c 8.2v zener diode DN marking 5 watt zener discovery dmd package 1076-7bbc
Contextual Info: Product Preview Data Sheet TI DN 2503686 February 2005 DMD 0.7 XGA 12º DDR DMD Discovery This data sheet describes the 0.7XGA 12º DDR DMD Discovery™. May not be reproduced without permission from Texas Instruments Incorporated Copyright 2005 Texas Instruments Incorporated

PDU-G101A

Abstract: UV 310 nm
Contextual Info: UV Enhanced GaN Detectors PDU-G101A PACKAGE DIMENSIONS INCH [mm] Ø.210 [5.35] .055 [1.40] 2X Ø.017 [0.43] Ø .118 [3.00] CATHODE VIEWING ANGLE 61° ANODE .100 [2.54] .500 [12.70] Ø.181 [4.60] .087 [2.21] CHIP CHIP DIMENSIONS INCH [mm] .016 [0.40] SQ TO-46 PACKAGE