352MM Search Results

DSZ-44SBF-S

Abstract: DSZ-44 DSZ-44PF spare lamp bulb
Contextual Info: Model DSZ-44 series offers superior quality optics and reliable mechanical components. This exceptional quality allows users to efficiently perform tasks and maintain high productivity. A wide variety of stands and illuminators are available to suite many different applications. The DSZ-44 series features a zoom

P1 SOT-89

Contextual Info: SOT-89 Tape and Reel Data SOT-89 Packaging Configuration: Figure 1.0 Packaging Description: SOT-89 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multi layer film (Heat Activated

Contextual Info: PRELIMINARY INFORMATION L9D222G72BG3 2.2 Gb, DDR2, 32 M x 72 Integrated Module IMOD Benefits FEATURES DDR2 SDRAM Data Rate = 800,667,533 and 400Mbps Available in INDUSTRIAL, EXTENDED and MIL-TEMP Package: 16mm x 22mm – 208PBGA, 1.00mm pitch Differential Data Strobe (DQS, DQSx\) per byte

Contextual Info: White Electronic Designs W3H64M72E-XSBX PRELIMINARY* 64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES „ Data rate = 667*, 533, 400 „ Programmable CAS latency: 3, 4 or 5 „ Package: „ Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 16 x 22mm

W3H128M72

Abstract: W3H128M72E-XSBX W3H128M72E
Contextual Info: White Electronic Designs W3H128M72E-XSBX Advanced* 128M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES „ Data rate = 667, 533, 400 „ Package: „ CK/CK# Termination options available • 0 ohm, 20 ohm • 208 Plastic Ball Grid Array PBGA , 16 x 22mm

W3H64M64E

Contextual Info: White Electronic Designs W3H64M64E-XSBX 64M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES „ Data rate = 667, 533, 400 „ Write latency = Read latency - 1* tCK „ Package: „ Commercial, Industrial and Military Temperature Ranges • 1.0mm pitch „

LXP-C0NNZ2-01-30Z7

Abstract: SSL-LX5093ID
Contextual Info: UNCONTROLLED DOCUMENT SC iO .75 PA R T N U M B E R REV. SSI—L X 5 Q 9 3 I D 3 5 6 C O N PRELIM INARY IN P / N DIR 5 .^0 CO.2 3 2 ] lf=20mA ELECTRO-OPTICAL CHARACTERISTICS TA=25T PARAMETER MIN PEAK WAVELENGTH FORWARD VOLTAGE 5,00 [0 ,1 9 7 ] REVERSE VOLTAGE

FDC6305N

Abstract: LX1689 SGE2697-1 what is COG capacitor
Contextual Info: Winter 2001 Issue Article Roger Holliday Power Management Products LX1689: More Light, Fewest Parts When it comes to mobile electronics, we’re spoiled. We want it all — and to an amazing degree we get it. Desktop computers of old couldn’t begin to keep up with the power we

Contextual Info: W3H64M72E-XSBX W3H64M72E-XSBXF 512MB – 64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS  Data rate = 667, 533, 400 Mb/s  30% Space saving vs. FBGA  Package:  Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 22mm

84 FBGA

Abstract: W3H64M72E-XSBX fbga84 ccd400
Contextual Info: White Electronic Designs W3H64M72E-XSBX 64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES „ Commercial, Industrial and Military Temperature Ranges • 208 Plastic Ball Grid Array PBGA , 16 x 22mm „ Organized as 64M x 72 • 1.0mm pitch „ Weight: W3H64M72E-XSBX - 2.5 grams typical

7410

Abstract: 7410E WED3C7410E16M-XBHX WED3C750A8M-200BX WED3C7558M-XBX 90Sn10Pb 63SN 37PB CBGA 255 motorola
Contextual Info: PowerPC 7410E AltiVec™/2M Byte SSRAM HiTCE™ Multi-Chip Package Optimum Density and Performance in One Package WED3C7410E16M-XBHX* Features Product Features • 7410 AltiVec™ µProcessor • 16 Mbit of Synchronous pipeline burst SRAM configured as 256Kx72 L2 Cache

CI 7410

Abstract: 7410 frequency divider PIN CONFIGURATION 7410 cga motorola 7410 transistor 7410 PC7410 Multi-Chip Modules motorola
Contextual Info: PC7410 Microprocessor + 2MByte L2-Cache Multi-Chip Module Fact Sheet Main Features • • • • • • PC7410 RISC microprocessor 16 Mbit of Synchronous Pipelined Burst SRAM configured as 256Kx72 L2-Cache Extended temperature modules 1.8V (Core)/2.5V (I/0) for industrial and military applications

D80008

Contextual Info: PRELIMINARY INFORMATION L9D340G64BG2 4.0 Gb, DDR3, 64 M x 64 Integrated Module IMOD Benefits FEATURES DDR3 Integrated Module [iMOD]: 1 00 1 enter-ter inated, u ull IO a age: 16 22 , 13 21 atri 2 1 all Matri all it : 1 00 S a e a ing oot rint er all en an ed, I edan e

Contextual Info: PowerPC 7410E AltiVec™/2M Byte SSRAM HiTCE™ Multi-Chip Package Optimum Density and Performance in One Package WED3C7410E16M-XBHX* Features Product Features • 7410 AltiVec™ µProcessor • 16 Mbit of Synchronous pipeline burst SRAM configured as 256Kx72 L2 Cache

Contextual Info: W3E32M72S-XB3X 32Mx72 DDR SDRAM FEATURES GENERAL DESCRIPTION  Data rate = 200, 250, 266, 333Mbs* The 256MByte 2Gb DDR SDRAM is a high-speed CMOS, dy nam ic ran dom-access, memory using 5 chips containing 536,870,912 bits. Each chip is internally configured as a quadbank DRAM.

L9D222G72BG3

Contextual Info: PRELIMINARY INFORMATION L9D222G72BG3 2.2 Gb, DDR2, 32 M x 72 Integrated Module IMOD Benefits FEATURES DDR2 SDRAM Data Rate = 800,667,533 and 400Mbps Available in INDUSTRIAL, EXTENDED and MIL-TEMP Package: 16mm x 22mm – 208PBGA, 1.00mm pitch Differential Data Strobe (DQS, DQSx\) per byte

L9D340G64BG2I15

Abstract: DDR3-1066 DDR3-1333 L9D340G64B L9D340G64BG2
Contextual Info: PRELIMINARY INFORMATION L9D340G64BG2 4.0 Gb, DDR3, 64 M x 64 Integrated Module IMOD Benefits FEATURES DDR3 Integrated Module [iMOD]: • Vcc=VccQ=1.5V ± 0.075V • 1.5V center-terminated, push/pull I/O • Package: 16mm x 22mm, 13 x 21 matrix w/ 271balls

Contextual Info: W3E32M72S-XSBX 32Mx72 DDR SDRAM FEATURES GENERAL DESCRIPTION  Data rate = 200, 250, 266, 333Mbs* The 256MByte 2Gb DDR SDRAM is a high-speed CMOS, dy nam ic ran dom-access, memory using 5 chips containing 536,870,912 bits. Each chip is internally configured as a quadbank DRAM.

Contextual Info: D2-PAK / TO-263 Tape and Reel Data D2-PAK Packaging Configuration: Figure 1.0 Packaging Description: D2-PAK parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated

WED3C750A8M-200BX

Contextual Info: PowerPC 750 /8Mbit SSRAM Multi-Chip Package Optimum Density and Performance in One Package WED3C7508M-200BX Features • • • A 200 MHz 750 RISC µProcessor 8 Mbit of Synchronous pipeline burst SRAM configured as 128Kx72 L2 Cache Extended temperature modules for industrial and military applications

W3H128M72E-XSBX

Abstract: 84 FBGA
Contextual Info: White Electronic Designs W3H128M72E-XSBX 128M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES  Data rate = 667, 533, 400  Package:  CK/CK# Termination options available • 0 ohm, 20 ohm • 208 Plastic Ball Grid Array PBGA , 16 x 22mm  Posted CAS additive latency: 0, 1, 2, 3 or 4

18CO

Contextual Info: White Electronic Designs W3H64M64E-XSBX ADVANCED* 64M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES  Commercial, Industrial and Military Temperature Ranges • 208 Plastic Ball Grid Array PBGA , 16 x 22mm  Organized as 64M x 64 • 1.0mm pitch

W332M72V-XSBX

Contextual Info: White Electronic Designs W332M72V-XSBX 32Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz Package: • 208 Plastic Ball Grid Array PBGA , 16 x 22mm The 256MByte (2Gb) SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing

Contextual Info: White Electronic Designs W3H64M72E-XSBX ADVANCED* 64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES „ Data rate = 667*, 533, 400 „ Programmable CAS latency: 3, 4 or 5 „ Package: „ Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 16 x 22mm