3819 TRANSISTOR Search Results

Contextual Info: MITSUBISHI MICROCOMPUTERS 3819 Group SINGLE-CHIP 8-B IT CMOS MICROCOMPUTER DESCRIPTION • D -A converter The 3819 group is the 8 -bit microcomputer based on the • Zero cross detection input. 1 channel 740 family core technology.

ATIC 39 b4

Abstract: D16002 ab digio
Contextual Info: M ITSU B ISH I M ICR O CO M P U TER S 3819 Group S IN G L E -C H IP 8 -B IT CM O S M IC R O C O M P U T E R DESCRIPTION The 3819 group is the 8-bit microcomputer based on the 740 family core technology. The 3819 group has a fluorescent display automatic display

CM-501

Abstract: CM501 000E-6 transistor ka6 transistor BL P44 100P6S-A M38197MA-XXXFP FF627 7000 jb1 y bl p57 transistor
Contextual Info: M IT S U B IS H I M ICROCOMPUTERS 3819 Group S IN G L E -C H IP 8 -B IT CM O S M IC R O C O M P U T E R DESCRIPTION • • • The 3819 group is the 8-bit microcomputer based on the 740 family core technology. The 3819 group has a fluorescent display automatic display

Contextual Info: MITSUBISHI MICROCOMPUTERS 3819 Group SINGLE-CHIP 8-BIT MICROCOMPUTER DESCRIPTION • D-A c o n v e rte -bit X 1 channels The 3819 group is a 8 -bit m icrocom puter based on the 740 fam ily • Z e r o cross detection in p u t. 1 channel

Contextual Info: MITSUBISHI MICROCOMPUTERS 3819 Group SINGLE-CHIP 8-BIT MICROCOMPUTER ●D-A converter . 8-bit ✕ 1 channels ●Zero cross detection input . 1 channel ●Fluorescent display function

PA 0016

Abstract: transistor ka6 automatic transfer switch M38197MA-XXXKP stage dimmer M38198 AN1311 automatic transfer switch circuit diagram PA 0016 diagram
Contextual Info: MITSUBISHI MICROCOMPUTERS 3819 Group SINGLE-CHIP 8-BIT MICROCOMPUTER ●D-A converter . 8-bit ✕ 1 channels ●Zero cross detection input . 1 channel ●Fluorescent display function

fld pcb

Abstract: mitsubishi rom ic M3819 PCA4738F-100A 100P6S-A CLK12 M38198EC-XXXFP
Contextual Info: ADVANCED AND EVER ADVANCING MITSUBISHI ELECTRIC MITSUBISHI 8-BIT SINGLE-CHIP MICROCOMPUTER 740 FAMILY / 38000 SERIES 3819 User’s Manual Group MITSUBISHI ELECTRIC keep safety first in your circuit designs ! ● Mitsubishi Electric Corporation puts the maximum effort into making semiconductor

2N3819 junction fet

Abstract: transistor 2N3819 2N3O19 2N3819 fet 2n3819 transistor VGD25 200UA 2N3819 VDS1
Contextual Info: centrai 2N3 819 *1 Central Semiconductor Corp. central semiconductor Corp. N-CHANNEL SILICON JUNCTION FET JEDEC TO-92 CASE 1 4 5 Adams Avenue Hauppauge, New York 11 7 8 8 DESCRIPTION The CENTRAL SEMICONDUCTOR 2 N 3819 type is a Silicon N-Channel Junction Field

3819

Abstract: 80424 T072
Contextual Info: Reid Effect Transistors N Channel Field Effect Transistors in T 0 7 2 and Plastic Encapsulation Type Characteristics at b v GSS N K T 80421 N K T 80422 N K T 80423 N K T 80424 PN 3819 1 f = 1 kH z 2 f = 100 M H z lDSS 25° C V D S* V mA 30 30 4 . . 2 0 (15

transistor 468

Abstract: 2n3819 2n 3819 3819 transistor transistor a effet de champ 3819
Contextual Info: *2 N 3819 F IE L D -E F F E C T T R A N S IS T O R , S IL IC O N . N C H A N N E L TRANSISTOR A EFFET DE CHAMP, SILIC IU M . CANAL N ^P re fe rre d device D isp o sitif recommandé - LF amplification A m plification BF - H F amplification 2 - 20 m A •d s s

automatic change over switch circuit diagram

Abstract: 7 segment dislay pin configuration automatic transfer switch M38197MA-XXXKP M5M27C101 RF remote control circuit diagram r2r ladder modified mitsubishi series 740 software PA 0016 7 segment led 12 Hour Digital Clock Circuit
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

100P6S-A

Abstract: CLK12 seg130
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

transistor ka6

Abstract: B00016 M38197MA-XXXKP
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

transistor ka6

Abstract: transistor de audio fp 1016 PA 0016 automatic transfer switch M38199MF-XXXFP M38198EC-XXXFP
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: 9-97 F2 Small Outline Surface Mount Package Devices N -C H A N N E L SILICON JU N C TIO N FIELD-EFFECT TRANSISTORS Device Type V g S(OFF) >GSS bvgss Min G Max @Vgs (V) Min Max M (V) (V) (MA) (nA) SMP 3369 SMP 3370 SMP 3458 SMP 3459 SMP 3460 -4 0 -4 0 -5 0

Contextual Info: M IT S U B IS H I M ICRO CO M PUTERS 3 8 1 9 Group S IN G L E -C H IP 8 -B IT CM O S M IC R O C O M P U T E R . 8 - b it X 1 channel DESCRIPTION • D -A c o n v e rte r The 3 8 1 9 group is th e 8 -b it m icro com puter ba s e d on the

2N5248

Abstract: BC264C 2N5557 2N5103 2N5485 2n5556 BF244A BF245C 2N5104 BC264A
Contextual Info: N -Channel Junction Field Effect Transistors GENERAL PURPOSE M A X IM U M R A T IN G S ' dss Im A l TYPE VG S off (V Y fs (mm hos) Ciss Crss NF (pF) (pF) (dB) max max max CASE NO. Pd (mW) b v gss (V) m in BC264A BC264E! BC264C BC264D TO-92DE TO-92DE TO-92DE

for transistor bf 245c

Abstract: BF 145 transistor transistor BF 245A BF 145 2n uhf fet micro to-237 transistor BC 310 transistor BC 321
Contextual Info: MICRO EL EC TRO NICS CORP û2 Ì F| bEHlTflfl 00DDb7S 2 N -Channel Junction Field Effect Transistors ~T ~3/-17 G EN ER A L PURPOSE M AXIM UM R A T IN G S 'd s s IraA ) TYPE V G S off) (V ) Y fs (mmhos) Ciss* Crss NF (pF) (pF) (dB) C A SE Pd NO. b v gss (mW)

marking code SE transistors

Contextual Info: TELEFUNKEN ELECTRONIC 17E » • fl'ÌEDQRb DQÌHS27 è BUT 56 • BUT 56 A mJMFWKIM electronic Crttttv«Ifcfwioiog* T*- 3 3 -Ì2 Silicon NPN Power Transistors Applications: Switching mode power supply Features: • In multi diffusion technique • Short switching times

c series transistor equivalent table

Abstract: transistor equivalent table 3819 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner's Data Sheet M JE16204 SCANSW ITCH™ NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors *Motorota Preferred D «vic* The MJE16204 is a state-of-the-art SWITCHMODE™ bipolar power transistor. It Is

4856a

Abstract: Bc 247b 2SK34 2SK19 30A-GR 2N4393 2SK19-BL 2SK33 BF 246B 2sk to-92
Contextual Info: SEMICONDUCTORS INC DTE D | 013bbSD □□□D3G7 S | N-Channel Junction Field Effect Transistors GENERAL PURPOSE MAXIMUM RA TIN G S TYPE NO. C A SE BC BC BC BC 264A 264B 264C 264D BF BF BF BF BF BF 2N 2N 2N 2N 2N Yfs mmhos •d s s (mA Pd (mWI bvg ss (V)

2N5458 equivalent

Abstract: 2N4303 mpf105 equivalent 2N4302 mpf103 2N5457 equivalent MPF102 equivalent transistor 2N4303 equivalent equivalent 2N5459 2N4304 equivalent
Contextual Info: Sem iconductors M icro-Electronics F.E.T.'s/P.U.T.'s/Light Detectors General Purpose Junction F.E.T.s REFERENCE T A B L E Code Min. B V qss Volts MEF101 MEF102 MEF103 MEF104 2N4302 2N4303 2N4304. 30 40 40 50 30 30 30 Volts Max. C 1S1 pF Max. 1kHz NF dB 10

2N2147

Abstract: fet 2n2646 2n2926 2n3055 tos 2N1305 npn 2N2926 2N1304 2n1304 transistor 2N1309 2N1308
Contextual Info: 57 T ransistors Continued Notes 1> M inim um value {2 Average value (3> Max. unilateralized power gain (4) Max. frequency o f oscillation {5) W ith heat sink Pto t: Max. total dissipation in free air a t 25°C ambient temp. Vcbo: Max. collector-to-base voltage, em itter