38GHZ Search Results

Contextual Info: MICROWAVE POWER GaAs FET TOSHIBA MICROWAVE SEMICONDUCTORS TECHNICAL DATA JS9P05-AS FEATURES: •H IG H POWER P1dB=28dBm ■C H IP FORM IHIGH GAIN GldB= f = 38GHz RF PERFORMANCE SPECIF CATIONS CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB

Contextual Info: Advance Product Information November 5, 2001 36 to 40 GHz 1W Power Amplifier TGA1171-EPU Key Features and Performance • • • • • • • 0.25um pHEMT Technology 36-40 GHz Frequency Range 29 dBm Nominal Pout @ P1dB, 38GHz 14 dB Nominal Gain OTOI 36dBm at 40GHz typical

TGA1073C

Abstract: TGA1073C-SCC
Contextual Info: Product Datasheet August 15, 2000 36 - 40 GHz Power Amplifier TGA1073C-SCC Key Features and Performance • • • • • • 0.25um pHEMT Technology 36-40 GHz Frequency Range 26 dBm Nominal Pout @ P1dB, 38GHz 15 dB Nominal Gain Bias 5-7V @ 240 mA Chip Dimensions 2.4 mm x 1.45 mm

DH1502

Contextual Info: OCTOBER 1993 DH1502 DS3911-1.1 DH1502 26 to 38GHz DROP-IN BALANCED MIXER The DH1502 is a drop-in balanced mixer covering the 26 38GHz frequency band. Thin film quartz circuits are used to accomplish both high performance and to ensure suitability for the harsh military environments. The unit employs a novel

Contextual Info: MICROWAVE POWER G aAs FET TOSHIBA MICROWAVE SEMICONDUCTORS TECHNICAL DATA JS9P04-AS FEATURES: •H IG H POWER P1dB= 26. OdBm ■C H IP FORM IH IG H GAIN GldB= 6. 5dB f = 38GHz RF PERFORMANCE SPECIF CATIONS CHARACTERISTICS Output Power at 1dB Compression Point

bonder

Abstract: JS9P05-AS
Contextual Info: MICROWAVE POWER G aAs FET TOSHIBA MICROWAVE SEMICONDUCTORS TECHNICAL DATA JS9P05-AS FEATURES: •H IG H POWER P1dB=28dBm @ f = 38GHz ■C H IP FORM BHIGH GAIN GldB= 6. 5dB @ f =38GHz RF PERFORMANCE SPECIFICATIONS C H A R A C TE R IS TIC S SYMBOL Output Power at 1dB

filtronic Solid State

Contextual Info: 38GHz Medium Power Amplifier Filtronic LMA444 Solid State PRELIMINARY Data Sheet Typical Specifications • • • • • • • • +21dBm Output Power @ 1dB Gain Com pression 15dB Typical Gain 10dB Input/Output Return Loss +5Volts Dual Bias Supply DC Decoupled RF Input and Output

Contextual Info: T485BMPA2 GaAs 38GHz Medium Power Amplifier MMIC • 2 Stage Monolithic Microwave Integrated Circuit MMIC HEMT Amplifier • Input/Output matched to 50 Ohm • Frequency range: 35 GHz to 38 GHz • Gain > 12 dB • P.1dB> 20 dBm • Psat > 22 dBm chip size: 2.2 mm x 1.1 mm

TGA4522

Contextual Info: TGA4522 33 – 47 GHz Wide Band Driver Amplifier Key Features • • • • • • • • • Frequency Range: 33 - 47 GHz 27.5 dBm Nominal Psat @ 38GHz 27 dBm P1dB @ 38 GHz 36 dBm OTOI @ Pin = 19 dBm/Tone 18 dB Nominal Gain @ 38GHz 15 dB Nominal Return Loss @ 38GHz

TGA4522-EPU

Contextual Info: Advance Product Information October 5, 2004 33 - 47 GHz Wide Band Driver Amplifier TGA4522-EPU Key Features • • • • • • • • • Frequency Range: 33 - 47 GHz 27 dBm Nominal Psat @ 38GHz 26 dBm P1dB @ 38 GHz 32 dBm OTOI @ 16dBm/Tone 14 dB Nominal Gain @ 38GHz

Contextual Info: CHV2240 RoHS COMPLIANT Multifunction K-band VCO and Q-band Multiplier GaAs Monolithic Microwave IC Description +V The CHV2240 is a monolithic multifunction proposed for frequency generation at 38GHz. It integrates a K-band Voltage Controlled Oscillator, a Q-band frequency

JS9P05-AS

Contextual Info: MICROWAVE POWER GaAs FET TOSHIBA MICROWAVE SEMICONDUCTORS TECHNICAL DATA JS9P05-AS FEATURES: •HIG H POWER P1dB=28dBm ■C H IP FORM IHIGH GAIN GldB= 6. 5dB f = 38GHz RF PERFORMANCE SPECIF CATIONS CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB

Contextual Info: 38GHz Waveguide Diplexer K&L Microwave offers 38GHz waveguide diplex filters at commercial prices and the fastest delivery available. Innovative design and manufacturing techniques allow K&L to maintain the highest standards of quality and performance, while

TGA4522

Contextual Info: Advance Product Information September 21, 2005 33 - 47 GHz Wide Band Driver Amplifier TGA4522 Key Features • • • • • • • • • Frequency Range: 33 - 47 GHz 27.5 dBm Nominal Psat @ 38GHz 27 dBm P1dB @ 38 GHz 36 dBm OTOI @ Pin = 19 dBm/Tone 18 dB Nominal Gain @ 38GHz

CHV2240

Abstract: dielectric resonator design dielectric resonator oscillator lerc
Contextual Info: CHV2240 RoHS COMPLIANT Multifunction K-band VCO and Q-band Multiplier GaAs Monolithic Microwave IC Description +V The CHV2240 is a monolithic multifunction proposed for frequency generation at 38GHz. It integrates a K-band Voltage Controlled Oscillator, a Q-band frequency

TGA1073C

Abstract: TGA1073C-EPU BV36
Contextual Info: Advance Product Information 36 to 41 GHz Power Amplifier TGA1073C-EPU Key Features and Performance • • • • • • 0.25um pHEMT Technology 36-41 GHz Frequency Range 26 dBm Nominal Pout @ P1dB, 38GHz 15 dB Nominal Gain Bias 5-7V @ 240 mA Chip Dimensions 2.4 mm x 1.45 mm

transistor 2xw

Abstract: 38GHz T485B S11 INFINEON power transistor gaas
Contextual Info: T485B_MPA_2 GaAs 38GHz Medium Power Amplifier MMIC • 2 Stage Monolithic Microwave Integrated Circuit MMIC HEMT Amplifier • Input/Output matched to 50 Ohm • Frequency range: 35 GHz to 38 GHz • Gain > 12 dB • P-1dB > 20 dBm • Psat > 22 dBm chip size: 2.2 mm x 1.1 mm

2863

Abstract: TGA1171 TGA1171-EPU
Contextual Info: Advance Product Information June 14, 2001 36 to 40 GHz 1W Power Amplifier TGA1171-EPU Key Features and Performance • • • • • • • 0.25um pHEMT Technology 36-40 GHz Frequency Range 29 dBm Nominal Pout @ P1dB, 38GHz 14 dB Nominal Gain OTOI 36dBm at 40GHz typical

TGA1073C

Abstract: TGA1073C-SCC
Contextual Info: Product Datasheet June 22, 2001 36 - 40 GHz Power Amplifier TGA1073C-SCC Key Features and Performance • • • • • • 0.25um pHEMT Technology 36-40 GHz Frequency Range 26 dBm Nominal Pout @ P1dB, 38GHz 15 dB Nominal Gain Bias 5-7V @ 240 mA Chip Dimensions 2.4 mm x 1.45 mm

Contextual Info: TGA4522 33 – 47 GHz Wide Band Driver Amplifier Key Features • • • • • • • • • Frequency Range: 33 - 47 GHz 27.5 dBm Nominal Psat @ 38GHz 27 dBm P1dB @ 38 GHz 36 dBm OTOI @ Pin = 19 dBm/Tone 18 dB Nominal Gain @ 38GHz 15 dB Nominal Return Loss @ 38GHz

Wireless Integrated Circuits

Abstract: CHV2243 PH25 United Monolithic Semiconductors
Contextual Info: PRESS RELEASE New Products Announcement Date : 04/05/2001 Author : Marketing group United Monolithic Semiconductors releases a new integrated 38GHz Voltage Controlled Oscillator To Business editors/High tech Writers th ORSAY , May 04 , 2001 Team Focus : Standard Products

TGA4036

Contextual Info: Advance Product Information December 9, 2004 19 - 38GHz Medium Power Amplifier TGA4036 Key Features • • • • • • • Frequency Range: 19 - 38 GHz 20 dB Nominal Gain 22 dBm Nominal Psat 30 dBm Nominal TOI Bias: 5 V, 160 mA 210mA @ P1dB 0.25 um 3MI pHEMT Technology

Contextual Info: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS OCTOBER 1993 DH1502 DS3911-1.1 DH1502 26 to 38GHz DROP-IN BALANCED MIXER The DH1502 is a drop-in balanced mixer covering the 26 38GHz frequency band. Thin film quartz circuits are used to

Contextual Info: Advance Product Information January 17, 2005 33 - 47 GHz Wide Band Driver Amplifier TGA4522-EPU Key Features • • • • • • • • • Frequency Range: 33 - 47 GHz 27 dBm Nominal Psat @ 38GHz 26 dBm P1dB @ 38 GHz 35 dBm OTOI @ Pin = 18 dBm/Tone 14 dB Nominal Gain @ 38GHz