38MAX Search Results

all 2084

Abstract: CE-2054 ce-208 CE-2084 CE-2074 CE-2094 ISO8802-3 200TYP
Contextual Info: 1/1 001-03 / 20030305 / ea383_ce_20.fm Power Supplies CE-20 Series DC to DC Converters Insulation Type For LAN ISO8802-3 10BASE2/5 SHAPES AND DIMENSIONS 4 3 4- 0.49±0.1 1 2 4 3 27.5max. 2 38max. 15.24±0.2 1 22max. 4- 0.49±0.1 15.24±0.2 36max. Insulation

CE-2054

Abstract: CE-2084 ce-208 CE-2074 CE-2094 ISO8802-3 15242 2094
Contextual Info: 1/1 DC-DCコンバータ 絶縁型LAN用ISO8802-3 10BASE2/5 RoHS指令対応製品 CE-20 シリーズ 形状・寸法 4 3 1 2 4 3 27.5max. 2 22max. 1 4- 0.49±0.1 15.24±0.2 38max. 4- 0.49±0.1 15.24±0.2 36max. 絶縁板 27.94±0.2 3min. 絶縁板 14max.

ce-208

Contextual Info: 1/1 DC to DC Converters Insulation Type, For LAN, ISO8802-3 10BASE2/5 Conformity to RoHS Directive CE-20 Series SHAPES AND DIMENSIONS 4- 0.49±0.1 3 1 2 4 3 27.5max. 4 4- 0.49±0.1 15.24±0.2 2 38max. 22max. 1 15.24±0.2 36max. Insulation 27.94±0.2 3min.

Contextual Info: Uniti m P—ZIP24—475—1.27 3, 05±0 2 OJ x o c +1 r-. r-. o o cu II cu o +i o . 0, 835TYP 1, zi 0, 5±0, 1 ei0O , 25CM .n o +i in o, 25 - 8: ¿5 2, 54 31, 38MAX 30, 88±0, 2 K12 w t w t w w y 24 Nov,2003

Contextual Info: TOSHIBA TC5164 5 805AJ/AFT/AJS/AFTS-40,-50 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8,388,6O8-WORD X8-BIT EDO (HYPER PAGE) DYNAMIC RAM DESCRIPTION The TC5164(5)805AJ/AFT/AJS/AFTS is an EDO (hyper page) dynamic RAM organized as 8,388,608

L01Z300S05

Abstract: L01Z050S05 L01Z200S05 200at L01Z400S05 L01Z L01Z100S05 L01Z150S05 L01Z500S05 L01Z600S05
Contextual Info: NEW CURRENT SENSORS L01Z TYPE ● 供給電源＋5V ● Power ● オンボードタイプ ● On-board supply : ＋5V type ● Compact, light weight, standardized from 50AT up to 600AT ● 小型軽量で50AT~600ATまで標準化 •仕様 SPECIFICATIONS

tdk ce series

Abstract: all 2084 TDK ce series converter CE-2084 A383 CE-2054 CE-2074 CE-2094 ISO8802-3
Contextual Info: A383_CE_20 1/1 TDK DC-DC Converter Insulation type, For LAN ISO8802-3 10BASE2/5, 1-year warranty period CE-20 SERIES SPECIFICATIONS AND STANDARDS PART NO. CE-2054 CE-2074 Maximum output power W 1.8 1.8 INPUT CONDITIONS Input voltage Edc V 4.5 to 5.5 10 to 15.75

Contextual Info: JULY 1996 GP200MHB12S ADVANCE ENGINEERING DATA DS4339-4.2 GP200MHB12S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1200V VCES 2.8V VCE sat 200A IC(CONT) 400A IC(PK) 190ns tr 840ns tf • High Power Switching. ■ Motor Control. ■ UPS.

HFA1C-300

Abstract: HFP2-20 HFP2 HFP2-05 HFA1C-50 HFP2-03 HFA1C HFA1-50 HFA1C-150 L03S
Contextual Info: CURRENT SENSORS 電流センサ A SERIES L / K SERIES HFP2 SERIES P7 / P7M SERIES P6 SERIES L03S TYPE NEW L08P TYPE NEW L10P TYPE NEW L16P TYPE NEW L01Z TYPE NEW HFA1 / HFA1C SERIES MCS SERIES 1 CURRENT SENSORS 電流センサ •用途 USAGE UPS インバータ

srw13ep

Abstract: tdk SRW SRW42EC SRW13EPC SRW28ECF SRW3020ED5 SRW25SEC4-V SRW28EC SRW transformers SRW28LEC
Contextual Info: 6355_SRW 1/9 Transformers SRW Series (General Transformers) For Power Supply Pin Terminal GENERAL TRANSFORMERS STANDARD PRODUCTS Shapes and Dimensions Fig. No. 1-1 1-2 1-3 1-4 1-5 1-6 1-7 1-8 1-9 1-10 1-11 1-12 1-13 1-14 1-15 1-16 1-17 1-18 1-19 1-20 1-21

SRW42EC

Abstract: ferrite core transformer calculation formula how to calculate ferrite core transformer SRW13EPC srw13ep SRW16ES4-H SRW16ES srw19epc SRW19ES SRW2820ED-3
Contextual Info: 6355_SRW 1/15 Transformers SRW Series For Power Supply Pin Terminal (General Transformers, Barrierless Transformer ) GENERAL TRANSFORMERS, BARRIERLESS TRANSFORMER® The SRW series transformer for switching power supplies utilizes ferrite materials, which makes it possible to achieve an incredibly

AN4502

Abstract: AN4503 GP200MKS12 GP200MLS12 IGBT 200A 1200V application induction heating DIODE 10V 10mA AN5190
Contextual Info: GP200MLK12 GP200MKS12 IGBT Chopper Module Preliminary Information DS5448-1.2 April 2001 FEATURES • Internally Configured With Upper Arm Controlled ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction KEY PARAMETERS

GP350MHB06S

Contextual Info: GP350MHB06S GP350MHB06S Half Bridge IGBT Module Replaces April 2002 version, DS4923-6.0 FEATURES DS4923-6.1 july 2002 KEY PARAMETERS • n - Channel VCES 600V ■ High Switching Speed VCE sat * (typ) 2.0V ■ Low Forward Voltage Drop (max) 500A Isolated Base

Contextual Info: rahm • P a c k a g e Available Appearance Board length mm Lead specs, (mm) Compatible with automatic placement and reflow soldering. Chip-on-board available. Pin-to pin pitch: 0.8mm Pins 28 and 52 Single in-line (SIP) p 2.54 s (2.0) (0.8) W1 0.5±0.1 0.4 ±0.1

ROHM Bx

Abstract: 0.4mm pitch qfp
Contextual Info: Hybrid ICs ROHM Hybrid ICs • ROHM hybrid ICs are of five types so that the customer can make a selection depending on the necessary degree of integration, operating conditions, price, and time for delivery: 1) BX series ICs, transistors, diodes, resistors and capacitors are

mxj connector

Abstract: mxj 5 connector
Contextual Info: SD~5 1323-0 06 PA RT NAME tt± c r FINISH i^ s ¡Ç -JG i C -J L jr a ;o j3 j J !1L i i i » h I J i » h /«S /Itu / 'i x 7— c e U L 94 V -0 f LIQ UID C R Y S Y A L POLYMER G L A S S F I L L E D , NAT URAL WHITE), U L 9 4 V - 0 R E C E R T A C L E COVER

GP250MHB06S

Abstract: IGBT 3300V 250A
Contextual Info: GP250MHB06S GP250MHB06S Half Bridge IGBT Module Replaces April 2002 version, DS4325 -7.0 FEATURES DS4325-7.1 July 2002 KEY PARAMETERS • n - Channel VCES ■ High Switching Speed VCE sat * (typ) ■ Low Forward Voltage Drop (max) 350A Isolated Base IC25 ■

"MOSFET Modules"

Abstract: MOSFET Modules 2MI100F-025 2MI50F-050 2MI100F-050 MOSFET Modules 250V 500V SaaflVTE T-Vl FUJI 2MI50S-050 200GO 2MI200F-025 6MI15FS-050
Contextual Info: FU JI [ l'î U M Q Ï Ï jS O E COL LMER S E M I C O N D U C T O R INC MAE D ICOL M O S FE T M o d u les 250V 500V MOSFET Module advantages: • Increase carrier frequencies • Improve control accuracy MOSFET Modules are used on: • Switch-mode power supplies SMPS

6 uH 1.5a

Contextual Info: RoHS EP10 HIGH FREQUENCY PoE TRANSFORMERS Designed for Power over Ethernet Applications EP10 Core Design 7~10 Watt Power Rating Available 8 Pin SMD Operating Temperature -40ºC to +85ºC Custom Designs Available Part Turns Ratio Application Number Pri. Sec.

dynex gp250mhb06s

Abstract: GP250MHB06S
Contextual Info: GP250MHB06S GP250MHB06S Half Bridge IGBT Module Replaces January 2000 version, DS4325 - 5.0 FEATURES DS4325-6.0 October 2001 KEY PARAMETERS • n - Channel VCES ■ High Switching Speed VCE sat (typ) ■ Low Forward Voltage Drop (max) 350A Isolated Base IC25

SOJ32-P-400-1

Abstract: TC558128BJ
Contextual Info: T O S H IB A TC558128BJ/BFT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WC>RD BY 8-BIT CMOS STATIC RAM DESCRIPTION The TC558128BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high

AB-19

Contextual Info: 9111 Series □upiin Hard Metric Connector Male Type AB-19 M aterial: Housing: 30% Glass Filled PBT Contacts: Phosphor Bronze. UL94V-0. E lectrical C haracteristics: Insulator Resistance: 1000M £2 min. Contact Resistance: 20m Q max. Operating Temperature: -550C~+1250C.

SRW42EC

Abstract: SRW13EPC srw13ep tdk SRW SRW42 SRW3020ED5 SRW16ES SRW40EC SRW28EC SRW19EPC
Contextual Info: Transformers SRW Series For Power Supply Pin Terminal The SRW series transformers employ PC type ferrite material, which exhibit outstanding efficiency in the frequency band associated with switching power supplies. APPLICATIONS Switching mode power transformers and inductors for TVs, VCRs,

GP250MHB06S

Contextual Info: GP250MHB06S GP250MHB06S Half Bridge IGBT Module Replaces April 2002 version, DS4325 -7.0 FEATURES DS4325-7.1 July 2002 KEY PARAMETERS • n - Channel VCES ■ High Switching Speed VCE sat * (typ) ■ Low Forward Voltage Drop (max) 350A Isolated Base IC25 ■