390MM Search Results

radome material abs

Abstract: 2400-2500MHz
Contextual Info: SPECIFICATION Part No. : Product Name Dimensions FG.PANEL.03 : : 2400-2500MHz Panel antenna 390*390mm REVISION STATUS Version Date Page Revision Description Prepared Approved 01 Jan 02nd 2006 All New Product TW Product Centre Ronan Quinlan All Rights Reserved

Contextual Info: Type 15C, 10U - 19” Rackmount/Desktop, Vertical featureS: • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 19” Rackmount fully compliant to IEEE 1101.10/.11 10U x 84HP x 390mm H x W x D 8, 16 or 20 slot PICMG: 2.0, 2.16, 2.17, EXP.0 backplanes (H.110 optional)

Contextual Info: 2.4G DIPOLE 9DBI ANTENNA FOR SMA MALE REVERSE POLARITY Part Number: LM254 Type: Frequency: Gain: Polarization: SWR: Impedance: Base Connector: Weight: Size: Dipole 2400~2500MHz 9Dbi Linear Vertical ≦1.5：1 50 Ω SMA Male Reverse Polarity 60g H 390mm x W 13.7mm × D 13.7mm

Contextual Info: 2.4G DIPOLE 9DBI ANTENNA FOR SMA MALE REVERSE POLARITY Part Number: LM254 Type: Frequency: Gain: P SWR: Impedance: Base Connector: Weight: Size: Dipole 2400~2500MHz 9Dbi L V 1.5：1 SMA Male Reverse Polarity 60g H 390mm x W 13.7mm × D 13.7mm Contact LM Technologies Ltd

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

CBVK741B019

Abstract: F63TNR F852 FDS6814 FDS9953A L86Z AA MARKING CODE SO8
Contextual Info: FDS6814 Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced using a rugged gate version of Fairchild's advanced PowerTrenchTM process. It has been optimized for power management applications which require a wide

Contextual Info: FDS3690 100V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • RDS ON = 0.066 Ω @ VGS = 6 V.

Contextual Info: Si4936DY Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

Contextual Info: May 1996 NDS9435A Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

Contextual Info: Si4953DY Dual P-Channel Enhancement Mode MOSFET General Description Features These P-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize onstate resistance and yet maintain superior switching

Contextual Info: FDC5612 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 4.3 A, 60 V. RDS ON = 0.055 W

Contextual Info: November 1998 FDG6301N Dual N-Channel, Digital FET General Description Features These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to

18L3

Abstract: JEDEC DO-214AC A140 F63TNR F924 FMKA140 T0012 SAFETY barrier 2896
Contextual Info: FMKA140 FMKA140 Features • Compact surface mount with J-bend leads SMA • 1.2 Watt Power Dissipation package • 1.0 Ampere, forward voltage less than 600 mV SMA (D0-214AC) Color Band Denotes Cathode Top Mark: A140 1.0 Schottky Power Rectifier Absolute Maximum Ratings*

5r6 inductor

Abstract: HWI453232 HWI453232-1R0 HWI453232-1R2 HWI453232-1R5 HWI453232-1R8 HWI453232-2R2 HWI453232-2R7 HWI453232-3R3 HWI453232-3R9
Contextual Info: MOLDED WIREWOUND CHIP INDUCTORS HWI453232 SERIES 1. PART NO. EXPRESSION : HW I 4 5 3 2 3 2 - 1 R 0 K F a (b) (c) (d)(e) (a) Series code (d) Tolerance code : K = ±10%, M = ±20% (b) Dimension code (e) F : Lead Free (c) Inductance code : 1R0 = 1.00uH 2. CONFIGURATION & DIMENSIONS :

7643G

Abstract: 384M 7643J
Contextual Info: Features • ■ ■ ■ ■ Applications 10 position selector switch Miniature industrial switch Vertical adjust Rugged surface mount design Break-before make timing Test equipment Instrumentation ■ Computer hardware ■ ■ 7643 SMD 7mm Square Sealed Selector Switch

7w66

Abstract: Si4435DY D665
Contextual Info: Si4435DY P-Channel Logic Level PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

M68HC705KICS

Abstract: 68HC705P3 68hc705j2 lifeboat 68HC05e6 68HC705j2 programming BERG CONNECTOR HC05 HC08 M68HC705E6PGMR* dip 28
Contextual Info: SG173/D REV. 10 Modular Development Tools QUARTER 4,1996 MMEVS ENHANCES MOTOROLA MODULAR TOOL OFFERINGS! Motorola now offers two fully modular development system choices: the new Motorola Modular Evaluation System MMEVS and our popular, high-performance Motorola Modular Development System (MMDS). You can now build

d7566

Contextual Info: October 1998 FDS6675 Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the

Single P-Channel, Logic Level, PowerTrench MOSFET

Abstract: P-Channel Logic Level PowerTrenchTM MOSFET F63TNR F852 FDR8308P SOIC-16
Contextual Info: November 1998 FDR8308P Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product.

ON B34

Abstract: b34 diode FAIRCHILD MBRS340 diode b34 diode schottky B34 b34. device data on semiconductor DO-214AB SS32-S310 MBRS340 diode 019 b34
Contextual Info: SS32-S310 SS32 - S310 Features • Metal to silicon rectifiers, majority carrier conduction. • Low forward voltage drop. • Easy pick and place. • High surge current capability. SMC/DO-214AB COLOR BAND DENOTES CATHODE 3.0 Ampere Schottky Barrier Rectifiers

ILSB-0603

Contextual Info: ILSB-0603 Vishay Dale Monolithic Chip Inductors FEATURES • High reliability. • Surface mountable. • Magnetically self shielded. • Nickel barrier plating virtually eliminates silver migration. MECHANICAL SPECIFICATIONS ENVIRONMENTAL SPECIFICATIONS Solderability: 90% coverage after 5 second dip in 235°C

fdn359an

Abstract: SOIC-16 SSOT-23 SSOT-3 SuperSOTTM -3
Contextual Info: April 1999 FDN359AN N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain

CBVK741B019

Abstract: F63TNR FDC6323L FDC633N SOIC-16 FDC633 20K-OHM
Contextual Info: March 1999 FDC6323L Integrated Load Switch General Description Features VDROP=0.2V @ VIN=5V, IL=1A, VON/OFF= 1.5V to 8V VDROP=0.3V @ VIN=3.3V, IL=1A, VON/OFF= 1.5V to 8V. These Integrated Load Switches are produced using Fairchild's proprietary, high cell density, DMOS

V52100

Contextual Info: Agilent HDSM-425G 0.4 " Dual Digit Green Surface Mount Seven Segment Display Data Sheet Description This surface-mountable seven segment display is designed with a multiplexable circuit meant for assembly using conductive epoxy curing. The lightweight, low