3BT 67 Search Results

Contextual Info: RHONBUS INDUSTRIES INC D W VTgH'igO 0 D 0 C m3 3 3bT M Single & Triple 10K / 1 0KH ECL Buffered Delay Modules Electrical Soe dfications at 25°C ECL Buffered Single Delay Delay Modules Tolerance 10K Part 10KHPart ns Number Number 3 ±0.5 FECL-3 FECLH-3 FECL-4

Contextual Info: b3E D Ordering number : EN¿036A • 7^7Q7b DD12771 3bT ITSAJ SANYO SEMICONDUCTOR CORP M onolithic Linear 1C LA4167M N o. 4036A SA \Y O 1-channel Record/Playback System for Microcassette and Compact Cassette Recorders P a c k a g e D im e n s io n s unit : mm

QPA1013

Contextual Info: blE » • 17313bS D D n S S b 3bT ■ B U B ^ '~ ~ ° f o - c 5 o For Im eûiate M i m e , Contact four local Salesperson BURR-BROÜIN CORP I ^B R pw jj 1013 m OPA fife - • ff# J AVAILABLE IN DIE r Precision, Single-Supply DUAL OPERATIONAL AMPLIFIER FEATURES

Mil-R-83536

Abstract: 1-5100E V130LA20B V150LA20B 130TX10 MIL-STD-750-1071 harris varistors harris mov 420TX V272A05
Contextual Info: bBE D • 43 G 5 2 7 1 G G 4 ô b 0 4 3bT « H A S H A R R I S S E n i C O N D SE C T O R 13 TVS HIGH RELIABILITY SERIES MECHANICAL AND ENVIRONMENTAL TESTING FOR AEROSPACE, MILITARY, AND HIGH RELIABILITY APPLICATIONS The high-reliability Harris varistor is the latest step in increased product performance, and is available for applications requiring

Contextual Info: T A IIMN LITON E L E C T RONIC LITEWJ I — - — -— I I • S S B S t l S 0 0 0 3 1 IS 423 - T L I T LCDBACKLIGirr LTM-89X10 1 FEATURES • THE S O L ID L IG H T SOURCE BE ABLE TO R E D U C E M E C H A N IC A L S T R U C T U R E . • LOW POW ER R E Q U IR E M E N T .

SmD TRANSISTOR 42T

Abstract: smd 42t
Contextual Info: SIEMENS BUZ 100 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/df rated • Ultra low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type Vbs >D ffDS on Package Ordering Code BUZ100

1NS246B

Contextual Info: DO-35 glass 0.5 Watt 1N5225B thru 1N5282B Use Advantages u Zener Diodes For use in dipping and stabilizing circuits, where real protection is needed. Competitive glass replacement for plastic DO-35 zener diodes. Compatible with all major automatic assembly equipment.

TRIAC BTA-SERIES

Abstract: bta 700 BTA 18 800
Contextual Info: _ m 3DE D r z 7 Ä T # _ ~T'-'ZS?'\5 7 C12CJ237 OÜBlbCm 7 • S C S - T H O M S O N M û Iï t L iig T m « ! B T A /B T B 0 6 A S G S-THOMSON SENSITIVE GATE TRIACS GLASS PASSIVATED CHIP I g t SPECIFIED IN FOUR QUADRANTS AVAILABLE IN INSULATED VERSION ->

BCW61RA

Abstract: bcx71 bcx71rh BCX71C BCW60
Contextual Info: ITT seuicond/ intermetall SGE D 4bô2711 D002bGQ 714 BCW61, BCX71 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. i i” n is 1 ! 4H P- Especially suited for automatic insertion in thick- and thin-film circuits. The transistors BCW61 are subdivided into the groups A, B,

Contextual Info: s«— w NSC This version features an integrated rear spacer and front locking bolt, whereby the rear spacer incorporates an M3 thread size and the locking bolt has an internal UNC 4-40 thread. The con­ ventional hexlocking bolts are not re­ quired. The square design of this insert

triac BT 139

Abstract: BT 139 Triac BTA06 BTB06 T0220AB
Contextual Info: SGS-THOMSON BTA06 T/D/S/A BTB06 T/D/S/A SENSITIVE GATE TRIACS FEATURES • VERY LOW Igt = 10mA max ■ LOW Ih = 15mA max ■ BTA Fam ily: INSULATING VOLTAGE = 2500V r MS (UL RECOGNIZED : E81734) DESCRIPTION The BTA/BTB06 T/D/S/A triac family are high per­

BTB06-600

Abstract: BTB60
Contextual Info: BTA06 T/D/S/A BTB06 T/D/S/A SGS-mOMSON M M iü lg ïM K SENSITIVE GATE TRIACS FEATURES • VERY LOW Iqt = 10mA max ■ LOW Ih = 15mA max ■ BTA Family: INSULATING VOLTAGE = 2500V RMS (UL RECOGNIZED : E81734) DESCRIPTION The BTA/BTB06 T/D/S/A triac family are high per­

Contextual Info: CXA1634P/M SONY- Pre-Power Amplifier for Pocketable Stereo Cassette Player Description CXA1634P 16 pin DIP Plastic The CXA1634P/M is a bipolar IC designed for headphone stereos. It provides such functions as pre-amplifier, DC volume control, bass CXA1634M

74HCT245

Abstract: M74HCT24
Contextual Info: SbE I • D0M0077 13S « S fiT H SGS-IHOMSON T -5 2 -2 3 -0 7 M54HCT245/640/643 M74HCT245/640/643 iti ® *® OCTAL BUS TRANSCEIVER 3-STATE HCT245 NON INVERTING, HCT640 INVERTING, HCT643 INVERTING/NON INVERTING S G S-THOMSON LOW POWER DISSIPATION |cc = 4pA (MAX.) at TA = 25°C

sun* sparcstation 20

Abstract: HP 9000 A500 Motherboard dell precision 690 Accelgraphics aic-7880 ansys TD-400 pentium pro memory management indigo mechanical engineering project
Contextual Info: Pentium Pro Processor Workstation Performance Brief June 1997 Order Number: 242999-003 Pentium Pro Processor Workstation Performance Brief Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or

TT 2222

Contextual Info: N AMER PHIL IPS/D ISCR ETE btiS3T31 DDSTOMS STb I IAPX B LV 45/12 b'lE D V.H.F. POW ER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 175 MHz communications band. Features • multi-base structure and emitter-ballasting resistors fo r an optimum temperature profile

Contextual Info: MIC5891 8-Bit Serial-Input Latched Source Driver Preliminary Information General Description Features The MIC5891 latched driver is a high-voltage, high current integrated circuits comprised of eight CMOS data latches, CMOS control circuitry for the common STROBE and

Contextual Info: MITSUBISHI LS Is {DRAM MODULE MH2M32CXJ-5,-6,-7/ M H2M32CNXJ-5,-6,-7 FAST PAGE MODE 67108864-BIT 2097152-WORD BY 32-BIT) DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) (Double side] The MH2M32CXJ/CNXJ is 2097152-word x 32-bit dynamic 1 2 3 4 & 6 7

Contextual Info: SIEMENS 8M X 32-Bit EDO-DRAM Module HYM328025S/GS-50/-60 Advanced Information • 8 388 608 words by 32-bit organization • Fast access and cycle time 50 ns access time 84 ns cycle time -50 version 60 ns access time 104 ns cycle time (-60 version) • Hyper page mode (EDO) capability

Contextual Info: DABIC-1% 10-BIT SERIAL-INPUT, LATCHED SOURCE DRIVERS The A 6809- and A 6810- devices combine 10-bit CMOS sWft registers, accompanying data latches and control circuitry w tih jH ro la r sourcing outputs and pnp active pull downs. Designed p r im lm p » drive vacuum-fluorescent displays, the 60 V and -40 i^ f c p b ^ r a t i n g s

Contextual Info: IMISC419 SYSTEM CLOCK CHIP CMOS LSI PLL FREQUENCY SYNTHESIZER August 1993 PRODUCT FEA TURES PRODUCT DESCRIPTION • Generates All Essential Clock Signals for the Motherboards. ■ 4V to 7V Operating Supply Range. ■ Supports 80286,80386 and 80486 Based Designs.

MC421000A32BA70

Abstract: MC-421000A32FA-80
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-421000A32BA, 421000A32FA 1 M-WORD BY 32-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-421000A32BA, 421000A32FA are 1,048,576 words by 32 bits dynam ic RAM module on which 2 pieces of 16 M DRAWI: /¿PD4218160 are assembled.

Burr-Brown Application Note AN-165

Abstract: 1N414S ppmc101 pfr 852 diode BB REF200 350JLA PPMC-101 PWS740 Lm324 window comparator REF200
Contextual Info: For Immediate Assistance, Contact Your Local Salesperson B U R R -B R O W N « REF200 DUAL CURRENT SOURCE/CURRENT SINK FEATURES APPLICATIONS • COMPLETELY FLOATING: No Power Supply or Ground Connections • HIGH ACCURACY: 100|^A ±0.5% • LOW TEMPERATURE COEFFICIENT:

smd transistor 43B

Abstract: mdn 3bt hst 3bt 1 E3040 BTS410H smd zener diode code AST BTS412B BTS 132 SMD STT 3 SIEMENS 410D
Contextual Info: SIEMENS BTS410H PROFET • High-side switch • Short-circuit protection • Overtemperature protection • Overload protection • Load dump protection1 • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Reverse battery protection 1)