3FL75D Search Results

DF378F

Abstract: df103b FT03E I36S PCF35N08 RFK35N08 RFK35N10 ba nuts 0166 415 04 1 060 Hall 01E
Contextual Info: 3875081 G E SOLID STATE -01 DE 1• 3fl75Dfll GDiaSDa ¡i I T - Z I'O I Rower MOSFET Chips File Number 1530 PCF35N08 N-Channel Enhancement-Mode Power Field-Effect Transistor Chip 80 V, 35 A, 0.055 O Features: ■ Contact metallization: Gate and source-aluminum

DG212CJ

Abstract: DG211CJ
Contextual Info: E SOLID STATE DI G 3875081 G E SOLID D E | 3fl75Dfll DDlDflOfl b STATE 01E 10808 D DG211/DG212 DG211/DG212 SPST 4-Channel Analog Switch GENERAL DESCRIPTION FEATURES The DG211 and DG212 are low cost, C M O S monolithic, Q U A D S P S T analog switches. These can be used In gener­

transistor 2n4871

Abstract: 2N4871 2N4870 GET4871 SCR firing unijunction transistor 2n4870 2n4871 transistor unijunction bi14 GET4870
Contextual Info: G E SOLID STATE 3875081 □Ï G E SOLID ]>E~ 3fl75Dfll □□IfiQOM (a STATE U n i j u n c t i o n T r a n s is t o r s a n r l S w it c h e s 01E 18004 D - T 31-21 2N4870,2N4871, GET4870, GET4871 Silicon Unijunction Transistors TO-92 TO-18 The GE/RC A 2 N 4 8 7 0,2N 4 8 71 , and GET4870, GET4871 are

MPS-A65

Contextual Info: G E SOLI» STATE Öl 3875081 G E SOLID » F | 3fl75Dfll 0G17TTE S STATE 01E 1 79 92 D T ' I I - Z l Signal Transistors- MPS-A65 Silicon Darlington Transistors TO-92 T h e G E /R C A M P S -A 6 5 is a p lan ar epitaxial passivated P N P

53-06A

Abstract: 2n5306 2N5305
Contextual Info: G E SOLI» STATE ~~ Gl DeT| 3fl75Dfll OG17c]47 D r - ^ 7 - ¿ 7 Transistors 2N5305, 6, 6A, GES5305, 6, 6A Silicon Darlington Transistors TO-92 TO-98 The GE/RCA 2N5305, 06, 06A and GES5305, 6, and 6A are

LM114

Abstract: LM114A LM114AH LM114H AH TRANSISTOR
Contextual Info: E SOLID STATE □1 DE|3fl75Dfll □ □ 11 □ 4Ì LM114/H, LM 114A/AH Monolithic Dual NPN General Purpose Amplifier T-si^ 'sn GENERAL DESCRIPTION FEATURES These devices contain a pair of junction-isolated NPN transistors fabricated on a single silicon substrate. This

2N5301

Abstract: 2N5302 2N5303 RCA-2N5301
Contextual Info: ÏÏÏ 3875081 G E SOLID D!T“|3fl75Dfll 0G173fii t^ | ~ STATE 01E 17384 D J~ - 2 3 - / S ' General-Purpose Power 2N5301, 2N5302, 2N5303 High-Current High-Power High-Speed N-P-N Power

PCF35N08

Abstract: RFK35N08 RFK35N10
Contextual Info: 3875081 G E SOLID STATE -01 DE 1 • 3fl75Dfll GDiaSDa ¡i I T-ZI'OI Rower MOSFET Chips File Number 1530 PCF35N08 N-Channel Enhancement-Mode Power Field-Effect Transistor Chip 80 V, 35 A, 0.055 O Features: ■ Contact metallization: Gate and source-aluminum

RCA-40346

Abstract: rca 40412 40412 rca 40346 40412 rca+40412 RCA 40346
Contextual Info: E SOLID STATE : Öl Ì>F| 3fl75Dai GUITSG'I & |~ Q r ~ y j o $ Hfgh-Voltage Power Transistors File Num ber 2 1 1 40 34 6, 40412 Medium-Power Silicon N-P-N Planar Transistors For H ig h -V o lta g e S w itchin g and L in e a r-A m p lifie r A p plicatio ns

Contextual Info: □1 SOLID STATE DE I 3fl75DBl g O l l O ^ 3 01E 11043 3875081 6 E SOLID STATE D J111-J113 N-Channel JFET Switch T -3 S T -M I S ­ FEATURES APPLICATIONS • • • • • Analog Switches • Choppers • Commutators Low Cost Automated Insertion Package

Contextual Info: Ïïï 3875081 G E SOLID D eT| 3fl75Dûl □01733M □ STATE D -r'-JS-H *01E ’1 7 3 3 4 ' D a rlin g to n P o w e r T r a n s is to rs — - — -=-

transistor BC 339

Abstract: 2 ampere pnp darlington array CA3725 T1P112 t1p115 TLP117 TIP110 TIP111 TIP112 TIP116
Contextual Info: Ïïï 3875081 G E SOLID D eT| 3fl75Dûl □01733M □ STATE *01E ’1 7 3 3 4 ' D -r'-JS-H D a rlin g to n P o w e r T ra n s is to rs — - — - =-

tl 0741

Abstract: 2N6422 HGP-I004 2N6421 30342 30343 s43a 92CS-30341 2N6420 2N6423
Contextual Info: 3875081 G E S O L ID CTATI_— Dï STATE | 3fl75Dôl □017115 1 I 7=53 ' - m g n -vo iiag e Power Transistors File Num ber 1100 2N6420, 2N6421, 2N6422, 2N6423

Contextual Info: G E SOLID STATE □1 DE | 3fl75Dfll DDllOMM S | 3875081 G E SOLID STATE 01E 11044 T - 3 D 7 ~ 2- 5“ n J174-J177 7 P-Channel JFET Switch «• APPLICATIONS Ê FEATURES • Analog Switches • Choppers • Commutators • Low Insertion Loss • No Offset or Error Generated By Closed Switch

T2302

Abstract: RCA-T2300 T2300B lt 302d T2302B T2300D T2301A T2301 T2301 Series T2300A
Contextual Info: G "□ì E SOLI» STATE ÌMf| 3fl7S0fil □Q177cil b 3875081 G E SOLID STATE 0 1E 17791 D T ria c s _ T2300, T2301, T2302 Series File Number 911 2.5-A Sensitive-Gate Silicon Triacs M odified T O -2 0 5 Package for A C Pow er Sw itching

GE SC160B triac

Abstract: Y4W diode y4w transistor H11AG3 y4w surface transistor H11AG2 H11AG1 DIODE Y4W SC160B y4w 7
Contextual Info: G E S O L I» 01 STATE DE § 3 075D Û 1 D 0 M 7 0 5 optoelectronic specifications. T - H l - Z 3 Photon Coupled Isolator H11AG1, H11AG2, H11AG3 G a A1 A s In fra re d E m ittin g D io d e & N P N S ilicon P h o to -T ra n s isto r The G E Solid State H IIA G series consists o f a gallium arsenide infrared

3146E

Abstract: ca3183ae 3183a 3183e 3118A 3118T
Contextual Info: G E S O L I D S T A T E Dl D E | 3ä75Clfll G014b3fc> 1 | Arrays CA3118, CA3146, CA3183 T “'H 3 * 2 .5 High-Voltage Transistor Arrays Features • M atched general-purpose transistors ■ V g £ m atched + 5 m V max. ■ Operation from D C to 120 M H z C A 3 1 1 8 A T , T ; C A 3 1 4 6 A E , E

74HC125

Abstract: 92CS-3 74HCT125 4HC125
Contextual Info: G E SOLI» STATE 01 D E I 3Û7S0Û1 001154a D | 1 -V 3 -2 I _ Technical Data File Num ber CD54/74HC125 CD54/74HCT125 1771 High-Speed CMOS Logic Quad Buffer; 3-State Type Features: • Separate o u tp u t enable in p u ts ■ 3 -state o u tp u ts The R C A -C D 54/7 4H C 125 and C D 54/74H C T125 contain 4

cd4009 hex inverter ic

Abstract: AN-6539 6C04069
Contextual Info: G E SOLID STATE Dl D E | 3fl7S0fll DOlBa^a 1 j : 01E 13292_ D -, 3875081 G E SOLID STATE CD4069UB Types CMOS Hex Inverter Features: High-Voltage Types 20-Volt Rating The RCA-CD4069UB types consist of six CMOS Inverter circuits. These devices are intended fo r all general-purpose Inverter

SC3000

Abstract: ua 8560 0NPA
Contextual Info: G E SOLID STATE 17E D 3ñ7S0fll QOaSlflT 2 High-Reliability ASICs - SC3000 Family These data sheets are provided for technical guidance only. The final device performance may vary depending upon the final device design and configuration. CMOS Standard Cells

2N5416 RCA

Abstract: 2NS416 2N5416 RCA-2N5415 50C11 2N3440 rca 2N5415 RCA transistors 2n3440 2N541 2N5415 RCA
Contextual Info: E SOLID STATE qi DE 1 3 fl7SDfll QQ171ba ‘i W^T- 3 1 ~ 1 High-Voltage Power Transistors- 5 !-• _ 2N5415, 2N5416 File Number Silicon P-N-P High-Voltage Planar Transistors

MJ2955

Abstract: MJ2955 300 watts amplifier BDX18 bdx18 me distan U007 L100 J BDX18 33z3
Contextual Info: G E SOLID STATE 3875081 G E SOL ID S TATE Pro Electron Power Transistors _ 01 ]>F| 3fl7S0fll 0017557 T 01Ë" 17557 D r - i J ' - 2-? BDX18, MJ2955 Silicon P-N-P Epitaxial-Base High-Power Transistors File Number 994 TERMINAL DESIGNATIONS Rugged, Broadly A pplicable Devices

Faa23

Contextual Info: ~G E SOLID STATE 01 De | 3fl7S0fll QD13L73 Q 01E 13672 ' 3875081 G E SOLID STATE CA3300 Types D “p CMOS Video Speed 6-Bit Flash Analog-to-Digital Converter For Use in Low-Power Consumption, High-Sp Digitization Applications ;u 18-Lead Dual-ln-Llne kPlastic Package

BU323

Abstract: BU323A M094 34053 HA 17304 92CM-34053 TF13W
Contextual Info: G E SOLI» STATE 3875081 ÏÏÏ G E~ S O L I D S T AT E D if | 3 fl7 S G û l 01E 17301 0 D 1 7 3 G1 D Darlington Power Transistors File N u m b e r 1312 BU323, BU323A 10-Ampere N-P-N Monolithic