3N45 Search Results

Contextual Info: 3N45K3 N-channel 450 V - 3.3 Ω typ., 1.8 A Zener-protected SuperMESH3 Power MOSFET in a IPAK package Datasheet - production data Features TAB Order code VDSS RDS on max ID Pw 3N45K3 450 V <4Ω 1.8 A 27 W • 100% avalanche tested 3 2 1 • Extremely high dv/dt capability

Contextual Info: 3N45K3-AP N-channel 450 V - 3.3 Ω typ., 0.6 A Zener-protected, SuperMESH3 Power MOSFET in a TO-92 package Datasheet - production data Features 1 2 3 Order code VDSS RDS on max 3N45K3-AP 450 V <4Ω ID Pw 0.6 A 3 W • 100% avalanche tested • Extremely high dv/dt capability

3N45

Abstract: 35165 TA9193 RFM3N45 RFM3N50 RFP3N45 RFP3N50 TA9232 rca application notes 35169
Contextual Info: Standard Power M O S F E T s _ File Number 1384 3N45, RFM3N50, 3N45, RFP3N50 Power MOS Field-Effect Transistors N-Channel Enhancernent-Mode Power Field-Effect Transistors 3 A, 450 and 500 V rDs on : 3 0 Features: • SOA is p o w e r-d is s ip a tio n lim ite d

1N47A

Contextual Info: jemitronicr discrete devices SEMICONDUCTORS Sem itronics Corp. silicon voltage reference diodes 500 milliwatt temperature compensated 200 milliwatt Nom. Zener Dynamic Zener Temp. Type Voltage, Impedance, Current Coefficient Vz volts Zz (ohms) lz (mA) (% per °C)

2N80

Abstract: 5P30
Contextual Info: . DIP & SMD DELAY LINES o FlO TAPS •14PIN &IS PIN PACKAGES F DIPS SURFACE MOUNTING*G LEADS PASSIVE SERIES SERIES DIP-14 AND DIP-G14* J4 J3 12 11, 10 i * Surface M ount G Lead Package ,8 IM PEDANCE ± 1 0 % - - 1 2 3 4 5 6 7 _2 8 5 _ _

3N45K3

Abstract: 3N45 STN3N45K3 STQ3N45K3 B2 marking code Zener Marking STMicroelectronics TO92 stu3n45k3 STQ3N45K3-AP
Contextual Info: 3N45K3 3N45K3-AP, 3N45K3 N-channel 450 V, 3.2 Ω, 1.8 A, TO-92, SOT-223, IPAK SuperMESH3 Power MOSFET Preliminary data Features Type VDSS RDS on max ID Pw 3N45K3 450 V < 3.8 Ω 0.6 A 2W 3N45K3-AP 450 V < 3.8 Ω 0.6 A 2.5 W 3N45K3 450 V

Contextual Info: 3N45K3 N-channel 450 V - 3.3 Ω typ., 0.6 A Zener-protected, SuperMESH3 Power MOSFET in a SOT-223 package Datasheet - production data Features 4 1 2 3 Order code VDSS RDS on max ID Pw 3N45K3 450 V <4Ω 0.6 A 3W • 100% avalanche tested • Extremely high dv/dt capability

2n189

Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
Contextual Info: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits

RFM3N45

Abstract: RFM3N50 RFP3N45 RFP3N50 TA9193 TA9232 92CS-3316Z
Contextual Info: 3 8 7 5 0 8 1 G E S O L I D Standard Power MOSFETs S T A T E ^ 3 2 , D e I b ü T S G Ö 0 0 1 0 1 1 7 I fl I ” ' T~ V 3N45, RFM3N50, 3N45, RFP3N50 File N u m b e r 1384 Power M O S Field-Effect Transistors

3N45

Abstract: 3N50 rfm3n P3N50
Contextual Info: m H a r r is 3N45/3N50 3N45/3N50 N-Channel Enhancement Mode Power Field Effect Transistors August 1991 Packages Features TO -2Q 4AA • 3A, 4 5 0 V and 5 0 0 V • rD S on = 3 ^ • SO A is P o w er-D issip atio n Lim ited • N anosecond S w itching S peeds

transistor 2N4

Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Contextual Info: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION

2N25

Abstract: 5n50 5n30 SMD 1N60 esc 5p20 5N35 3N25 5P30 5N80 3N45
Contextual Info: E S C ELECTRONICS CORP SOE D • 3037257 OOODMÖLi T57 MECE □IP &SMD DELAY LINES SERIES D IP -14 IO TAPS •14 PIN & 16 PIN PACKAGES □IP Si SURFACE MOUNTINB *Q LEADS PASSIVE SERIES '% H i ¡7 T -H 7 - 13 AND DIP-G14* * Surface Mount G Lead Package IMPEDANCE ± 10%

RCA H 541

Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Contextual Info: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

2SK752

Abstract: NEC diode 2SK754 3N125 3N126 2SK791 2SK755 3N105 3N134 82230
Contextual Info: PART NUMBER INDEX Part Number Manufacturer 2SK752 2SK753 2SK754 2SK755 2SK756 2SK757 2SK758 2SK759 2SK760 2SK761 2SK762 2SK762A 2SK763 2SK763A 2SK764 2SK764A 2SK765 2SK765A 2SK766 2SK767 2SK768 2SK769 2SK770 2SK771 2SK772 2SK773 2SK774 2SK775 2SK776 2SK777

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

3N45K3

Abstract: STN3N45K3 1N45K3
Contextual Info: 3N45K3 STQ1N45K3-AP, 3N45K3 N-channel 450 V, 3.2 Ω, 1.8 A, TO-92, SOT-223, IPAK SuperMESH3 Power MOSFET Preliminary data Features Type VDSS RDS on max ID Pw 3N45K3 450 V < 3.8 Ω 1.8 A 2W STQ1N45K3-AP 450 V < 3.8 Ω 1.8 A 2.5 W 3N45K3 450 V