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    5N50 Search Results

    5N50 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    H5N5006LSTL-E Renesas Electronics Corporation Nch Single Power Mosfet 500V 3.5A 3000Mohm LDPAK(S)-(1)/To-263 Visit Renesas Electronics Corporation
    H5N5001FM-E Renesas Electronics Corporation Nch Single Power Mosfet 500V 5A 1.5Mohm To-220Fm Visit Renesas Electronics Corporation
    H5N5006DL-E Renesas Electronics Corporation Nch Single Power Mosfet 500V 3A 3000Mohm DPAK(L)-(2)/To-251 Visit Renesas Electronics Corporation
    H5N5016PL-E Renesas Electronics Corporation N Channel MOSFET High Speed Power Switching, TO-3PL, /Tube Visit Renesas Electronics Corporation
    H5N5006DSTL-E Renesas Electronics Corporation Nch Single Power Mosfet 500V 3A 3000Mohm DPAK(S)/To-252 Visit Renesas Electronics Corporation
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    5N50 Price and Stock

    Cal-Chip Electronics CHV0805N500181KCT

    HVCAP0805 COG 180PF 10% 500V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CHV0805N500181KCT Digi-Reel 4,000 1
    • 1 $0.46
    • 10 $0.275
    • 100 $0.1768
    • 1000 $0.12484
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    CHV0805N500181KCT Cut Tape 4,000 1
    • 1 $0.46
    • 10 $0.275
    • 100 $0.1768
    • 1000 $0.12484
    • 10000 $0.12484
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    CHV0805N500181KCT Reel 4,000 4,000
    • 1 -
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    • 10000 $0.10014
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    Cal-Chip Electronics CHV0805N5006R8CCT

    HVCAP0805 COG 6.8PF .25PF 500V
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    DigiKey CHV0805N5006R8CCT Cut Tape 4,000 1
    • 1 $0.46
    • 10 $0.275
    • 100 $0.1768
    • 1000 $0.12484
    • 10000 $0.12484
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    CHV0805N5006R8CCT Digi-Reel 4,000 1
    • 1 $0.46
    • 10 $0.275
    • 100 $0.1768
    • 1000 $0.12484
    • 10000 $0.12484
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    CHV0805N5006R8CCT Reel 4,000 4,000
    • 1 -
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    Cal-Chip Electronics CHV0805N500181JCT

    HVCAP0805 COG 180PF 5% 500V
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    DigiKey CHV0805N500181JCT Cut Tape 3,999 1
    • 1 $0.46
    • 10 $0.272
    • 100 $0.175
    • 1000 $0.12351
    • 10000 $0.12351
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    CHV0805N500181JCT Digi-Reel 3,999 1
    • 1 $0.46
    • 10 $0.272
    • 100 $0.175
    • 1000 $0.12351
    • 10000 $0.12351
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    Cal-Chip Electronics CHV0805N500681FCT

    HVCAP0805 COG 680PF 1% 500V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CHV0805N500681FCT Digi-Reel 3,980 1
    • 1 $1.36
    • 10 $0.85
    • 100 $0.5826
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    CHV0805N500681FCT Cut Tape 3,980 1
    • 1 $1.36
    • 10 $0.85
    • 100 $0.5826
    • 1000 $0.44068
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    Cal-Chip Electronics CHV0805N5002R2CCT

    HVCAP0805 COG 2.2PF .25PF 500V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CHV0805N5002R2CCT Digi-Reel 3,965 1
    • 1 $0.62
    • 10 $0.376
    • 100 $0.2458
    • 1000 $0.17692
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    CHV0805N5002R2CCT Cut Tape 3,965 1
    • 1 $0.62
    • 10 $0.376
    • 100 $0.2458
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    5N50 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    5N50 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    5N50 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    5N50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    5n50

    Abstract: 5N50G 5n50 mosfet mosfet d 476
    Text: UNISONIC TECHNOLOGIES CO., LTD 5N50 Power MOSFET 5A, 500V N-CHANNEL POWER MOSFET 1 1 „ DESCRIPTION The UTC 5N50 is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the


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    PDF O-262 O-220F O-220F1 O-252 QW-R502-476 5n50 5N50G 5n50 mosfet mosfet d 476

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 5N50 Preliminary Power MOSFET 500V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 5N50 is an N-channel MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the requirements of


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    PDF O-220F O-262 O-252 QW-R502-476

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM Power MOSFET IXTA 5N50P IXTP 5N50P VDSS = 500 = 5 ID25 RDS on ≤ 1.3 V A Ω N-Channel Enhancement Mode Symbol VDSS VDGR VGSS VGSM Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Maximum Ratings


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    PDF 5N50P 5N50P O-220 O-263

    5N50

    Abstract: 5n50 mosfet 476 e data by 476 diode
    Text: UNISONIC TECHNOLOGIES CO., LTD 5N50 Preliminary Power MOSFET 5A, 500V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 5N50 is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the


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    PDF O-220F O-262 O-252 QW-R502-476 5N50 5n50 mosfet 476 e data by 476 diode

    5n50 mosfet

    Abstract: 5n50 data by 476 diode 5N50G-TN3-R UTC5N50 5N50G-T2Q-T
    Text: UNISONIC TECHNOLOGIES CO., LTD 5N50 Power MOSFET 5A, 500V N-CHANNEL POWER MOSFET 1 TO-262 „ DESCRIPTION The UTC 5N50 is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the


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    PDF O-262 O-220F O-252 QW-R502-476 5n50 mosfet 5n50 data by 476 diode 5N50G-TN3-R UTC5N50 5N50G-T2Q-T

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 5N50K Power MOSFET 65A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 5N50K is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the


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    PDF 5N50K 5N50K QW-R502-870

    KF5N50

    Abstract: 5n50 KF 5N50 DPak KF5N50DZ KF5N50D 5N-50 D-PAK package KF5N dpak Package
    Text: SEMICONDUCTOR 5N50DZ MARKING SPECIFICATION DPAK PACKAGE 1. Marking method Laser Marking. 2. Marking 2 No. Item 5N50 1 DZ 3 801 Marking Description KF KEC Fresh FET 5N50 5N50 Revision DZ DPAK Lot No. 801 Device Name 2008. 12. 1 Revision No : 0 8 Year 0~9 : 2000~2009


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    PDF KF5N50DZ KF5N50 KF5N50 5n50 KF 5N50 DPak KF5N50DZ KF5N50D 5N-50 D-PAK package KF5N dpak Package

    5n50

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 5N50 Power MOSFET 5A, 500V N-CHANNEL POWER MOSFET  The UTC 5N50 is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the requirements of


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    PDF O-262 O-220F O-220F1 O-252 QW-R502-476 5n50

    5N50

    Abstract: 5N50P
    Text: PolarHVTM Power MOSFET IXTA IXTP IXTV IXTY N-Channel Enhancement Mode Avalanche Rated VDSS = 500 V ID25 = 4.8 A RDS on ≤ 1.4 Ω 5N50P 5N50P 5N50P 5N50P TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


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    PDF 5N50P O-263 5N50 5N50P

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 5N50-P Power MOSFET 5A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 5N50-P is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the


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    PDF 5N50-P 5N50-P QW-R205-027

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 5N50K-MT Power MOSFET 5A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 5N50K-MT is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is


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    PDF 5N50K-MT 5N50K-MT QW-R502-B22

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 5N50K Power MOSFET 65A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 5N50K is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the


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    PDF 5N50K 5N50K QW-R502-872

    5N50

    Abstract: 5N50P
    Text: Advance Technical Information PolarHVTM Power MOSFET VDSS = 500 V = 4.8 A ID25 RDS on ≤ 1.4 Ω IXTA 5N50P IXTP 5N50P IXTY 5N50P N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


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    PDF 5N50P 405B2 5N50P 5N50

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 5N50K Power MOSFET 5A, 500V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 5N50K is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the


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    PDF 5N50K 5N50K O-220F QW-R502-870

    5N50

    Abstract: HiperFET TR 505 diode 5N50PM ixtp.m
    Text: Preliminary Technical Information PolarHVTM HiPerFET Power MOSFET IXFP 5N50PM VDSS ID25 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 500 3.2 1.4 200 V A Ω ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings


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    PDF 5N50PM -55ions 405B2 5N50 HiperFET TR 505 diode 5N50PM ixtp.m

    5n50 mosfet

    Abstract: 5n50 t5n50 transistor 5N50 NTD5N50T4 NTD5N50-1 AN569 NTD5N50 SMD310
    Text: 5N50 Preferred Device Power MOSFET 5 Amps, 500 Volts N–Channel DPAK Designed for high voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits. http://onsemi.com Features • • • • • •


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    PDF NTD5N50 r14525 NTD5N50/D 5n50 mosfet 5n50 t5n50 transistor 5N50 NTD5N50T4 NTD5N50-1 AN569 NTD5N50 SMD310

    5n50c

    Abstract: 5N50
    Text: TM 5N50C / 5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    PDF FQD5N50C FQU5N50C FQU5N50C O-251 FQU5N50CTU 5n50c 5N50

    5n50c

    Abstract: FQPF*5n50c 5n50
    Text: TM 5N50C/5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    PDF FQP5N50C/FQPF5N50C FQPF5N50C FQPF5N50CT FQPF5N50CYDTU 5n50c FQPF*5n50c 5n50

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


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    PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS

    5N50FT

    Abstract: 5N50T
    Text: 5N50T / 5N50FT 500V / 5A N-Channel Enhancement Mode MOSFET 500V, RDS ON =1.5W@VGS=10V, ID=2.5A Features TO-220AB ITO-220AB • Low On-State Resistance • Fast Switching • Low Gate Charge & Low CRSS • Fully Characterized Avalanche Voltage and Current


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    PDF HY5N50T HY5N50FT O-220AB ITO-220AB 2002/95/EC O-220AB ITO-220AB MIL-STD-750 HY5N50T 5N50T 5N50FT 5N50T

    t5n50

    Abstract: 5n50 5n50 mosfet NTD5N50 NTD5N50T4 351 D-PAK
    Text: 5N50 Preferred Device Advance Information Power MOSFET 5 Amps, 500 Volts N–Channel DPAK Designed for high voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits. http://onsemi.com 5 AMPERES 500 VOLTS


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    PDF NTD5N50 r14525 NTD5N50/D t5n50 5n50 5n50 mosfet NTD5N50 NTD5N50T4 351 D-PAK

    5N20

    Abstract: 5n50 ME15N06E MF2N60E me15n MG2.5N20 MG2P50 MG2.5N50 ME10N10E-F ME12P06
    Text: - 146 - f m s tt € m & m m. * * _ K V * (V) f*t (A) * * MEIONIOE-F 0*0?- MOS N 100 DSS 10 D ME12P06 0*0*- MOS P -60 DSS -12 D ME12P06-F 0*0?- MOS P -60 DSS -12 D ME15N06E 0 *0?- MOS N 60 DSS 15 D ME15N06E-F 0 * 0 ?- MOS N 60 DSS 15 D MF2N60E 0 *0?- MOS


    OCR Scan
    PDF ME10N10E-F ME12P06 ME12P06-F ME15N06E ME15N06E-F MF2N60E MF4N60E MF4N50E MF5N50E MF6N40E 5N20 5n50 MF2N60E me15n MG2.5N20 MG2P50 MG2.5N50 ME10N10E-F ME12P06

    5n50 mosfet

    Abstract: 5n50 transistor 5N50
    Text: MOTOROLA MGM5N45 5N50 MGP5N45 5N50 SEM ICONDUCTOR TECHNICAL DATA D esigner’s D ata Sheet 5.0 AMPERE N-CHANNEL TM OS GEM FET N-CHANNEL ENHANCEMENT-MODE SILICON GATE, INSULATED GATE BIPOLAR TRANSISTOR rCE on = 1 6 Ohm 450 and 500 Volts These GEMFETS are designed fo r high voltage, h igh cu rren t


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    PDF MGM5N45 MGM5N50 MGP5N45 MGP5N50 MGM5N50 5n50 mosfet 5n50 transistor 5N50

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


    OCR Scan
    PDF VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit