Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    3SK324 Search Results

    3SK324 Datasheets (3)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    3SK324
    		Renesas Technology Si Nch Dual Gate MOS FET UHF RF LOW NOISE Amplifier Original PDF 83.83KB 8
    3SK324UG
    		Renesas Technology Si Nch Dual Gate MOS FET UHF RF LOW NOISE Amplifier Original PDF 179.37KB 8
    3SK324UG
    		Renesas Technology Si Nch Dual Gate MOS FET UHF RF LOW NOISE Amplifier Original PDF 179.37KB 8
    SF Impression Pixel

    3SK324 Price and Stock

    Renesas Electronics Corporation

    Renesas Electronics Corporation 3SK324UG-TL-E

    RF MOSFET 3.5V CMPAK-4
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 3SK324UG-TL-E Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Rochester Electronics 3SK324UG-TL-E 24,000 1
    • 1 -
    • 10 -
    • 100 $0.61
    • 1000 $0.50
    • 10000 $0.45
    		Buy Now

    Renesas Electronics Corporation 3SK324UG-TL-H

    SI NCH Dual GATE MOSFET UHF RF LOW NOISE AMPLIFI
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 3SK324UG-TL-H 27,226 1
    • 1 -
    • 10 -
    • 100 $0.35
    • 1000 $0.29
    • 10000 $0.26
    		Buy Now

    Renesas Electronics Corporation 3SK324UG

    (Alt: 3SK324UG)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Silica 3SK324UG 28 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    3SK324 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    3SK324UG

    Abstract: 3SK324
    Contextual Info: 3SK324 Si Nch Dual Gate MOS FET UHF RF LOW NOISE Amplifier REJ03G0532-0100 Rev.1.00 May 18, 2005 Features • • • • Low noise characteristics; NF = 1.0 dB typ. at f = 900 MHz High gain characteristics; PG = 24 dB typ. (at f = 900 MHz) Capable low voltage operation; +B = 3.5 V


    Original     		3SK324 REJ03G0532-0100 PTSP0004ZA-A temperat-900 Unit2607 3SK324UG 3SK324 PDF

    3SK324

    Abstract: REJ03G0532-0100 3sk324ug
    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		d-900 Unit2607 3SK324 REJ03G0532-0100 3sk324ug PDF

    Contextual Info: 3SK323 Si Nch Dual Gate MOS FET UHF RF LOW NOISE Amplifier REJ03G0531-0100 Rev.1.00 May 18.2005 Features • • • • Low noise characteristics; NF = 1.0 dB typ. at f = 900 MHz High gain characteristics; PG = 24 dB typ. (at f = 900 MHz) Capable low voltage operation; +B = 3.5 V


    Original     		3SK323 REJ03G0531-0100 PLSP0004ZA-A Unit2607 PDF

    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		do-900 Unit2607 PDF

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055 PDF

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


    Original     		REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 PDF

    3SK323

    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		d-900 Unit2607 3SK323 PDF

    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		do-900 Unit2607 PDF

    3SK323

    Abstract: 3SK324
    Contextual Info: 3SK323 Si Nch Dual Gate MOS FET UHF RF LOW NOISE Amplifier REJ03G0531-0100 Rev.1.00 May 18.2005 Features • • • • Low noise characteristics; NF = 1.0 dB typ. at f = 900 MHz High gain characteristics; PG = 24 dB typ. (at f = 900 MHz) Capable low voltage operation; +B = 3.5 V


    Original     		3SK323 REJ03G0531-0100 PLSP0004ZA-A Channel-900 Unit2607 3SK323 3SK324 PDF