C1547
Abstract: No abstract text available
Text: Actual Size 6,4 mm x 7,8 mm TPS65150 Actual Size 4 mm x 4 mm www.ti.com SLVS576 – SEPTEMBER 2005 Low Input Voltage, Compact LCD Bias IC With VCOM Buffer FEATURES APPLICATIONS • • • • • • • • • • • • • • • • • • 1.8-V to 6-V Input Voltage Range
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TPS65150
SLVS576
TSSOP-24
QFN-24
C1547
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led clock circuit diagram
Abstract: ECL IC NAND ic 3842 datasheet DAC ic 0808 pin diagram 3842 smps IC 8 pin ic 3842 MCK12140 application note ADC 10 Ghz 266 XnOR GATE NB3N551
Text: Complete Clock Management Solutions Processor Skew Tuning 1 HCSL TTL-to-PECL Translator Multiplexer LVDS TTL/CMOS LVDS/HCSL Loop Filter VCO 10 ZDB ASIC Memory 1 CMOS/TTL Divider/ Prescaler PE/EQ Processor 9 1 Discrete PLL Blocks Processor 5 1 PECL/CML Phase
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BRD8042-4
BRD8042/D
led clock circuit diagram
ECL IC NAND
ic 3842 datasheet
DAC ic 0808 pin diagram
3842 smps IC
8 pin ic 3842
MCK12140 application note
ADC 10 Ghz
266 XnOR GATE
NB3N551
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dsd12
Abstract: No abstract text available
Text: [AK5574] = Preliminary = AK5574 4-Channel Differential 32-bit ADC 1. General Description The AK5574 is a 32-bit, 768kHz sampling, differential input A/D converter for digital audio systems. It integrates an 4-channel A/D converter, suitable for mixers and automotive amplifier units. The AK5574
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AK5574]
AK5574
32-bit
AK5574
32-bit,
768kHz
120dB
110dB
123dB
dsd12
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1000 BASE Isolation Modules 5kV
Abstract: No abstract text available
Text: Power Module Assembly PBT 250 Thyristor / Thyristor Module Technical Data Typical applications : DC Motor control, Temperature control, Professional light dimming. Type No. PBT 250/04 PBT 250/08 PBT 250/12 PBT 250/16 VRRM (Volts) 400 800 1200 1600 VRSM (Volts)
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half-sine10
Abstract: PBT56-14
Text: Moulded Module Assembly PBT 56 / PBH 56 Technical Data Typical applications : DC Motor control, Temperature control, Professional light dimming. Type No. PBT 56/04 PBT 56/06 PBT 56/08 PBT 56/10 PBT 56/12 PBT 56/14 PBT 56/16 PBH 56/04 PBH 56/06 PBH 56/08 PBH 56/10
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150/Max
300/Max
half-sine10
PBT56-14
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Thyristor 470 A
Abstract: No abstract text available
Text: Moulded Module Assembly PBT 26 / PBH 26 Thyristor - Thyristor Module / Thyristor - Diode Module Technical Data Typical applications : DC Motor control, Temperature control, Professional light dimming. Type No. PBT 26/04 PBT 26/06 PBT 26/08 PBT 26/10 PBT 26/12
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100/Max
250/Max
Thyristor 470 A
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267CS
Abstract: venturi flow meter ISO 3966 V-cone abb d 32425 ABB pressure transmitter series 2600T modbus RS485 ISO 3966 D-32425 C0920 NACE ISO
Text: Data Sheet FieldIT SS/267CS_4 2600T Series Pressure Transmitters Model 267CS Multivariable for mass flow selectable maximum working pressure up to 41MPa, 5945psi • Base accuracy : ±0.075% ■ Span limits – 0.05 to 2000kPa, 0.2inH2O to 290psi differential
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SS/267CS
2600T
267CS
41MPa,
5945psi
2000kPa,
290psi
5945psia
venturi flow meter
ISO 3966 V-cone
abb d 32425
ABB pressure transmitter series 2600T
modbus RS485
ISO 3966
D-32425
C0920
NACE ISO
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TH 46 Thyristor
Abstract: 15 kV thyristor
Text: Moulded Module Assembly PBT 46 / PBH 46 Thyristor - Thyristor Module / Thyristor - Diode Module Technical Data Typical applications : DC Motor control, Temperature control, Professional light dimming. Type No. PBT 46/04 PBT 46/06 PBT 46/08 PBT 46/10 PBT 46/12
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150/Max
300/Max
TH 46 Thyristor
15 kV thyristor
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Untitled
Abstract: No abstract text available
Text: 864/ @B2;9<91AB?5 49> ?5:1F 6KGVWTKU ] ] ] ] ] Kdbc n`indodq`A 8<7hY O\o^cdib no\i_\m_8= kdi LF nj^f`o Kdbc nrdo^cdib ^\k\^dotA 89<XD 6 @7Y Edapm^\o`_ ^jio\^on Hkjst n`\g`_ ajm \pojh\od^ r\q` njg_`mdib \i_ ^g`\idib ] Udibg` nd_` no\]g` \i_ g\o^cdib otk` \q\dg\]g`
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997XGF
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Untitled
Abstract: No abstract text available
Text: [AK5574] = Preliminary = AK5574 4-Channel Differential 32-bit ADC 1. 概 要 AK5574はディジタルオーディオ機器用に開発された差動入力、サンプリング周波数8kHz 768kHz の32-bit A/Dコンバータです。 AK5574は、4チャネルのA/Dコンバータを持ち、ミキサーや車載アンプユニットに最適です。
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AK5574]
AK5574
32-bit
AK5574ã
768kHz
32-bit
120dBã
110dBã
123dBã
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Untitled
Abstract: No abstract text available
Text: 864/ @B2;9<91AB?5 49> ?5:1F 6KGVWTKU ] ] ] ] ] Kdbc n`indodq`A 8<7hY O\o^cdib no\i_\m_8= kdi LF nj^f`o Kdbc nrdo^cdib ^\k\^dotA 89<XD 6 @7Y Edapm^\o`_ ^jio\^on Hkjst n`\g`_ ajm \pojh\od^ r\q` njg_`mdib \i_ ^g`\idib ] Udibg` nd_` no\]g` \i_ g\o^cdib otk` \q\dg\]g`
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997XGF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N60-S Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220 TO-220F1 1 1 1 TO-220F2 TO-251 1 1 TO-262 FEATURES * R DS ON = 2.5Ω @ V GS =10 V, I D =2.2A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, high RuggednessA
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4N60-S
O-220
O-220F1
O-220F2
O-251
O-262
O-220F
4N60-S
QW-R502-973.
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Untitled
Abstract: No abstract text available
Text: 864/ @B2;9<91AB?5 49> ?5:1F 6KGVWTKU ] ] ] ] ] Kdbc n`indodq`A 8<7hY O\o^cdib no\i_\m_8= kdi LF nj^f`o Kdbc nrdo^cdib ^\k\^dotA 89<XD 6 @7Y Edapm^\o`_ ^jio\^on Hkjst n`\g`_ ajm \pojh\od^ r\q` njg_`mdib \i_ ^g`\idib ] Udibg` nd_` no\]g` \i_ g\o^cdib otk` \q\dg\]g`
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997XGF
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OPA2674
Abstract: OPA2677 OPA2691 OPA3691 OPA691 THS6042
Text: OPA2674 SBOS270 − AUGUST 2003 Dual Wideband, High Output Current Operational Amplifier with Current Limit FEATURES D D D D D D D D DESCRIPTION WIDEBAND +12V OPERATION: 220MHz G = +4 UNITY-GAIN STABLE: 250MHz (G = +1) HIGH OUTPUT CURRENT: 500mA OUTPUT VOLTAGE SWING: 10VPP
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OPA2674
SBOS270
220MHz
250MHz
500mA
10VPP
SO-14
800mA)
OPA2674
OPA2677
OPA2691
OPA3691
OPA691
THS6042
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MAX410
Abstract: 1259 UV 471
Text: 184 - - nm & , M AX410 • A t l t 7-ky y hw±, « t , M M IiE E :2 5 0 # V *a x M AXIM Vs=±5V Ta=258C 4nV/vr Hz • Î I Î g S E E Î â f f l : ± 2. 4 ~ ± 5V + 7./1— U - b : i . f 5V//ZS • ? P Î S S E :2 . 5mA •fe Xr ^ H • / V —x m u m
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MAX410
MAX410B
Ta-25
MAX410
1259
UV 471
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HARRIS / HA1
Abstract: HA-5222 A5E8
Text: - 128 - HA-5222 HARRIS M S E E : 0 . 3mVtyp • A Vs=±15V 4nV /VH z tx / v - w — H A -5 2 2 2 -9 • ft Ta=25°C 35 35 V A / / V H S ilA ^ f f l 5 5 V ft ft ft -9:-40—-85, -5:0—^+75 -9:-40— 85.-5:0^75 V / / mW j J l E • t i S * f l i ^ : + 56nA
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-HA-5222
HA-5222â
AtlM77M.
HA7-5222
CL-50pF
40DkHz
100mV,
HARRIS / HA1
HA-5222
A5E8
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4N90
Abstract: No abstract text available
Text: S S W Æ 4N 90 AS Advanced Power MOSFET FEATURES B V dss = 9 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 MA Max. @ VDS= 900V
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SSW/I4N90AS
4N90
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d2166
Abstract: PM6665 byt27 78s00 bus duct
Text: S ta n d a r d P r o d u c t PM I I PMC-Sierra, Inc. 1^^ ISSUE 5 P M 5344 S P T X SONE T/SDH PA TH TERMINA TING TRANS CE I VER P M 5344 SPTX S O N E T / S D H PATH T E R M I N A T I N G TRANSCEIVER I s s u e 5: PMC-Sierra, Inc. May, 1995 8501 Commerce Court Burnaby, BC Canada V5A 4N3 604 668 7300
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920518P9
d2166
PM6665
byt27
78s00
bus duct
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4N60
Abstract: 4N60S ssp4n50 40 gd 4n mosfet 4n60
Text: SSP4N 55/4N 60 SSH4N55/4N 60 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO-220 Lower R d s <o n Improved inductive ruggedness Fast switching tim es Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area
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55/4N
SSH4N55/4N
O-220
SSP4N55
SSH4N55
SSP4N60
SSH4N60
4N60
4N60S
ssp4n50
40 gd 4n
mosfet 4n60
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL POWER MOSFETS SSP4N55/4N60 FEATURES • • • • • • • Lower R ds o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability
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SSP4N55/4N60
SSP4N55
SSP4N60
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Untitled
Abstract: No abstract text available
Text: m 7*12*1237 rz 7 Ä 7f G04b243 ôbQ • SGTH _ SGS-TUOMSON RÆ Q M[iLËOT(s«S S T P 4 N 1 0 0 XI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss S TP 4N 1 0 0 X I ■ . ■ . . ■ . 1000 V R d S( oii < 4 0 Id 2 A TYPICAL RDS(on) = 3.1 Cl
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G04b243
7TETS37
STP4N100XI
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4N60
Abstract: SSH4N60 4N60P ssp4n50 SSH4N55 SSP4N55 SSP4N60 mosfet 4n60
Text: SAMSUN6 ELECTRONICS INC SSP4N55/4N6Ó SSH4N55/4N 60 b7E T> • 7*lbmH2 OOl^BHI OTO ■ SMGK N-CHANNEL POWER MOSFETS FEATURES • « • • • • • TO-220 Low er R ds ON Im proved in d u c tive ru g g ed n es s F a st sw itch ing tim e s R u g g ed polysilicon g a te cell stru ctu re
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71b4142
SSP4N55/4N6Ã
SSH4N55/4N60
SSP4N55/SSH4N55
SSP4N60/SSH4N60
SSP4N55
SSH4N55
SSP4N60
SSH4N60
SSP4N55/4N60
4N60
SSH4N60
4N60P
ssp4n50
SSH4N55
mosfet 4n60
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Untitled
Abstract: No abstract text available
Text: I f o / i 7 ~iq / in e LOC DI ST AD TRUE P O S I T I O N ARE HELD F L A T THE NOTED RETENTION T O L E R A N C E OF THE POST T I P S A P P L I E S A G A I N S T THE P R I N T E D C I R C U I T BOARD. DINENSIONS FEATURES APPLY AT ON SOLDER THE TAILS, INTERSECTION
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AUG99
11N0V99
30N0V99
0G3C-0248-99
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6-178764-1
Abstract: No abstract text available
Text: 8 7 T H IS DRAW ING IS U N P U B L IS H E D . M. COPYRIGHT RELEASED FO R PU BLIC AT IO N LOC A L L R IG H T S R E S E R V E D . - REVISIONS £5 D IS T J B Y TYCO ELECTRON IC5 CORPORATION. LTR DATE DWN APVD 03AUG05 TS KB D E S C R IP T IO N D2 ADDED -2 ECR—05—008152
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03AUG05
I-------94.
64P0S
6-178764-1
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