4000W AMPLIFIER Search Results

1200w power amplifier circuit diagram

Abstract: 2000w power amplifier circuit diagram 2000w power amplifier diagram 1200w amplifier 4000w power amplifier dps1200 project power amplifier 1000W with two channel 48v 30a 1600w 1200w power amplifier 12v 30a 4000w
Contextual Info: End-to-End Embedded Power Solutions 2010 Product Selection Guide End-to-End Power Solutions Front Ends & Rectifiers Hybrid Architecture: ≈81% overall efficiency STRENGTHS: WEAKNESSES: 48 OR 24V RECTIFICATION • Large installed base • di/dt of isolated bricks less than POLs

4000w power amplifier

Abstract: antenna mtbf IEC-801-5 Surge protect surge protection mtbf 300w power amplifier circuit diagram mtbf antenna FILTRONIC COMTEK 4000w Filtronic BTS and antenna installation
Contextual Info: CY156 DC Inserter / Bias Tee FEATURES • Extremely low loss BLOCK DIAGRAM MOLEX - 5566 • Extremely high return loss +12V DC GND • High DC current handling • Integrated surge protection To BTS DIN 7-16 M To Antenna DIN 7-16 (F) RF RF + DC • High MTBF

FHX04

Abstract: FHX04X FHX05X FHX06X hemt low noise die
Contextual Info: FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) High Associated Gain: 10.5dB (Typ.)@f=12GHz Lg ² 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX04X, FHX05X, FHX06X are High Electron Mobility

Contextual Info: X-Band Rack-mount SSPA 500W to 600W ARMA-4000X series                               

Contextual Info: Ku-Band Hub-mount SSPA 300W to 500W AWMA-5000KTM series Features •          Remote Monitor & Control High gain and linearity Output power of 500W see table A Gain adjustment Output sample monitor port Temperature gain compensation

4000w power amplifier

Abstract: filtronic band-pass GSM BTS antenna BTS antenna installation FILTRONIC gsm tma tma umts TMA dual band bts gsm rx unit mtbf dual transceiver CA968F1V3
Contextual Info: CA968F1V3 PCS1900/TDMA/CDMA Dual Duplexed, Full Band, Single TMA FEATURES • Small, low weight • Dual duplexed • High linearity • Lightning protected • High reliability • Available as RoHS compliant Inspired Wireless Solutions BENEFITS • Reduction in roll out costs

transistor 1345

Abstract: FHR02X FHX02X GaAs FET HEMT Chips
Contextual Info: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg ² 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX02X is a High Electron Mobility Transistor(HEMT)

1000w power amplifier

Contextual Info: C-Band Hub-mount SSPA 500W to 1000W AWMA-6000CTM series Features •          Remote Monitor & Control High gain and linearity Output power up to 1000W see table A Gain adjustment Output sample monitor port Temperature gain compensation

POWER AMPLIFIER CIRCUIT DIAGRAM 4000W

Abstract: 4000w power amplifier piezo charge amplifier MO-127 SA14 flyback 150w
Contextual Info: PULSE WIDTH MODULATION AMPLIFIER SA14 M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • • • • • • • HALF BRIDGE OUTPUT WIDE SUPPLY RANGE—16-200V 20A CONTINUOUS TO 85° C CASE 3 PROTECTION CIRCUITS

Contextual Info: PU LSE WIDTH MODULATION AMPLIFIER APÉ* M l C R O Î E C M N O L O f i Y SA14 H T T P ^ / WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • • • • • • • HALF BRIDGE OUTPUT WIDE SUPPLY RANGE— 16-200V 20A CONTINUOUS TO 85° C CASE

GaAs FET HEMT Chips

Contextual Info: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg ² 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX02X is a High Electron Mobility Transistor(HEMT)

POWER AMPLIFIER CIRCUIT DIAGRAM 4000W

Abstract: 4000w power amplifier
Contextual Info: PULSE WIDTH MODULATION AMPLIFIER SA14 M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • • • • • • • HALF BRIDGE OUTPUT WIDE SUPPLY RANGE—16-200V 20A CONTINUOUS TO 85° C CASE 3 PROTECTION CIRCUITS

POWER AMPLIFIER CIRCUIT DIAGRAM 4000W

Contextual Info: PULSE WIDTH MODULATION AMPLIFIER SA14 M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • • • • • • • HALF BRIDGE OUTPUT WIDE SUPPLY RANGE—16-200V 20A CONTINUOUS TO 85° C CASE 3 PROTECTION CIRCUITS

hemt low noise die

Contextual Info: FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) High Associated Gain: 10.5dB (Typ.)@f=12GHz Lg ² 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX04X, FHX05X, FHX06X are High Electron Mobility

Contextual Info: Ku-Band Transceiver 300W to 500W AWMT-5000K series Features •               Operating Ku-Band Tx: 14.00 - 14.50 GHz 13.75 - 14.50 GHz optional Rx: 10.95 - 12.75 GHz 70 or 140 MHz Tx and Rx interface Easy to install and operate

FHR02FH

Abstract: transistor hemt Low Noise HEMT
Contextual Info: FHR02FH Super Low Noise HEMT FEATURES • • • • • Low Noise Figure: 1.2B Typ. @f=18GHz High Associated Gain: 8.5dB (Typ.)@f=18GHz Lg ² 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability Hermetically Sealed Package DESCRIPTION The FHR02FH is a High Electron Mobility Transistor(HEMT) intended for

high frequency transistor ga as fet

Abstract: GaAs FET HEMT Chips fujitsu hemt
Contextual Info: FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB Typ. @f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg ² 0.25µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain Gate Gate DESCRIPTION The FHX35X is a High Electron Mobility Transistor(HEMT) intended

POWER AMPLIFIER CIRCUIT DIAGRAM 4000W

Abstract: 4000w power amplifier circuit diagram
Contextual Info: PULSE WIDTH MODULATION AMPLIFIER SA04 M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • • • • • • WIDE SUPPLY RANGE—16-200V 20A CONTINUOUS TO 85° C CASE 3 PROTECTION CIRCUITS ANALOG OR DIGITAL INPUTS

Contextual Info: PULSE WIDTH MODULATION AMPLIFIER SA04 HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 FEATURES • • • • • • WIDE SUPPLY RANGE—16-200V 20A CONTINUOUS TO 85° C CASE 3 PROTECTION CIRCUITS ANALOG OR DIGITAL INPUTS

Contextual Info: FHX45X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.55dB Typ. @f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg ² 0.15µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain DESCRIPTION Gate The FHX45X is a Super High Electron Mobility Transistor

Low Noise HEMT

Abstract: Super low noise figure and high associated gain
Contextual Info: FHC40LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg ² 0.15µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package

fujitsu hemt

Contextual Info: FHX04LG/LP, 05LG/LP, 06LG/LP Super Low Noise HEMT FEATURES • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) • High Associated Gain: 10.5dB (Typ.)@f=12GHz • Lg ² 0.25µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package

300w power amplifier circuit diagram

Abstract: POWER AMPLIFIER CIRCUIT DIAGRAM 4000W 4000w amplifier
Contextual Info: PULSE WIDTH MODULATION AMPLIFIER SA04 HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 FEATURES • • • • • • WIDE SUPPLY RANGE—16-200V 20A CONTINUOUS TO 85° C CASE 3 PROTECTION CIRCUITS ANALOG OR DIGITAL INPUTS

POWER AMPLIFIER CIRCUIT DIAGRAM 4000W

Contextual Info: PULSE WIDTH MODULATION AMPLIFIER SA04 M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • • • • • • WIDE SUPPLY RANGE—16-200V 20A CONTINUOUS TO 85° C CASE 3 PROTECTION CIRCUITS ANALOG OR DIGITAL INPUTS