400I Search Results

N05A

Abstract: N01A N03A n07a n03b n02a N06A N05B AS N03A PART N01A
Contextual Info: ADVANCE INFORMATION W All information in this data sheet is preliminary and subject to change. I v l X I V M 16-Channel/Dual 8-Channel, Low-Leakage, CMOS Analog M ultiplexers 10/96 Features ♦ On-Resistance, <400i2 max ♦ Transition Time, <500ns ♦ On-Resistance Match, <10£1

BUK856-400IZ

Abstract: DD30 T0220AB ignition coil IGBT CL-8A
Contextual Info: N AMER PHILIPS/DISCRETE b^E D • bbS3T31 0030^05 S3T H A P X Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor BUK856-400IZ Protected Logic-Level IGBT_ GENERAL DESCRIPTION QUICK REFERENCE DATA

CEFF630

Contextual Info: PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES • 200V, 10 A , Rds on =400itiQ @Vgs=1 0V • Super high dense cell design for extremely low Rds(on). • High power and current handling capability. • TO-220F full-pak for through hole.

3L50P

Abstract: NS-105
Contextual Info: SPEED/PACKAG E AVAILABILITY 54 F,W 54LS F,W 54S F,W PIN CONFIGURATION 74 A,F 74LS A,F 74S A,F A,F,W PACKAGE SWITCHING CH ARACTERISTICS vCC = 5V, t a TEST CONDITIONS PARAMETER - 25°c 54/74 54/74LS 54/74S CL=15pF RL -400ii Ct=15pF C L =15pF RL =280 2 R L =2kS2

VRAF

Contextual Info: SPEED/PACKAGE AVAILABILITY 54 F,W 74 PIN CONFIGURATION A,F SWITCHING CHARACTERISTICS v Cc = 5V, t a - 25°C TRUTH TABLE 54/74 TEST CONDITIONS PARAMETER *Max Propagation delay time tp m Low-to-high tPHL High-to-low MIN TYP 10 18 24 27 t n +8 *n C|_=15pF RL=400i2

tl2a

Abstract: BU4001B
Contextual Info: BU4001B/BU4001BF BU4001B BU4001 BF •79yK 2A *N O R '!r-h Quad 2-Input NOR Gate BU4001B, BU4001BF l i , 2 A f t j E S f t il N O R 1 ? 'y 7 C :4 [ § |S § £ |* J jK L T l'i- to f - h T 'T o tf - l e i £/<•;/ A H B ftte BU 400IB/BU4001BF are 2-input postive logic NOR

R30-4000602

Abstract: CuZn39Pb3 R30-4000402 R30-4000502 R30-4000702 R30-4000802 R30-4000902 R30-4001002 R30-4001202 R30-4001302
Contextual Info: Customer Information Sheet D RAWING N o .: SHEET R30-400XX02 PART HARWI N USA T E L : 603 8 93 5 3 76 F A X : 603 8 93 5396 mi s d h a r w i n . com No. LI 2 OF 2 | PART IF IN D OUBT No. - ASK 4.00 R30-4001402 14.00 R30-4000502 5.00 R30-400I502 15.0 0 R30-4000602

Alessi

Abstract: 250VA 300VA 350VA 800VA EN50081-1 EN50082-1 EN60335-1
Contextual Info: Technische Daten Beschreibung Alessi 300i-12 Alessi 350i-24 Alessi 400i-48 250VA 300VA 700VA 300VA 350VA 800VA 300VA 400VA 800VA Ausgangsleistung.1 : @ Ta = 25°C Pnominell P30minute Pspitze Ausgangsspannung Ausgangsfrequenz Ausgangswellenform Zulässige cos ϕ der last

ic NJM4560

Abstract: NJM4565
Contextual Info: DUAL OPERATIONAL AMPLIFIER NJM4565 The NJM4565 integrated circuit is a high-gain, wide-bandwidth, dual low noise operational am plifier capable of driving 20V peak-to-peak into 400il load. The NJM4565 is good characteristics com pared to the NJM4560. The NJM4565 is classified

Contextual Info: DUAL O PERATIONAL A M P L I F I E R E JB C J NJM4565 The NJM4S6S integrated circuit is a high-gain, wide-bandwidth, dual low noise operational amplifier capable of driving 20V peak-to-peak into 400il load. T he NJM4565 is good characteristics com pared to the NJM4560. T he NJM4565 is classified

5N602

Contextual Info: Product Specification Philips Semiconductors Insulated Gate Bipolar Transistor BUK856-400IZ Protected Logic-Level IGBT_ GENERAL DESCRIPTION QUICK REFERENCE DATA Protected N-channel logic-level insulated gate bipolar power

Contextual Info: Philips Semiconductors Product specification Insulated Gate Bipolar Transistor BUK856-400IZ Protected Logic-Level IGBT_ GENERAL DESCRIPTION QUICK REFERENCE DATA Protected N-channel logic-level insulated gate bipolar power

800va inverter

Abstract: 400va inverter 12vdc to 230vac sinewave inverter 800va ups circuit 800va ups 300VA 300i-12 250VA 350VA 800VA
Contextual Info: Technical data Description Alessi 300i-12 Alessi 350i-24 Alessi 400i-48 250VA 300VA 700VA 300VA 350VA 800VA 300VA 400VA 800VA Output power1 : @ Ta = 25°C Pnom P30minutes Psurge Output voltage Output frequency Output waveform Admissible cos ϕ of load Input voltage ± 3% tolerance) :

Contextual Info: N AUER PHILIPS/DISCRETE bTE D bbS3T31 O D S m O S S3T « A P X Product Specification Philips Semiconductors BUK856-400IZ Insulated Gate Bipolar Transistor Protected Logic-Level IGBT GENERAL DESCRIPTION QUICK REFERENCE DATA Protected N-channel logic-level insulated gate bipolar power

D 400 F 6 F BIPOLAR TRANSISTOR

Contextual Info: Philips Semiconductors Product specification Insulated Gate Bipolar Transistor BUK866-400IZ Protected Logic-Level IGBT_ GENERAL DESCRIPTION Protected N-channel logic-level insulated gate bipolar power transistor in a plastic envelope

CEM9400

Contextual Info: CEM9400 PRELIM INARY P-Channel Enhancement Mode Field Effect Transistor FEATURES • - 2 0 V , - 2 .5 A , RDS ON =250mQ @ V gs =-10V. R ds(on)=400itiQ @ V gs =-4.5V. • Super high dense cell design for extremely low R ds(on). • High power and current handing capability.

P8251A

Abstract: P82C51A tmp8251 82C51A P8251
Contextual Info: T O S H IB A TM P82C51A TMP82C51AP-2 /TMP82C51AP-10 TMP82C51 AM-2/TMP82C51 AM-10 PROGRAM M ABLE COMMUNICATION INTERFACE 1. GENERAL DESCRIPTION T he TM P82C51A is th e in d u stry sta n d a rd U n iv ersa l S ynchron o u s/A sy n ch ro n o u s R eceiver/T ransm itter USART th a t is fabricated u sin g C-MOS silicon g a te technology.

2N4001 diode

Abstract: diode 2n4001 2n4001 diode 2N4000 2N4000 Transistor 2N4001 2n4001 TRANSISTOR EM 5135 diode
Contextual Info: TYPES 2N4000, 2N4001 N-P-N EPITAXIAL PLANAR SILICON POWER TRANSISTORS FOR HIGH-SPEED POWER SWITCHING APPLICATIONS o f TM • 15 W at 100°C Case Temperature £| • Max VcE iai of 0.3 V at 0.5 • Max ton of 300 nsat 0.5 A lc • Min f T of 40 MHz Alc g |

MPU85-347

Contextual Info: TOSHIBA CUC/UP . WE C • iai7 2 4 1 _ 0 Q ia0 D 1 7 ■ 1 ~ - 5 Z 'J 3 '0 3 TOSHIBA TMP82C255A/TMP82C265A CMOS PROGRAMMABLE PERIPHERAL INTERFACE TMP82C255AN-2 / TMP82C265AF-2 TMP82C255AN-10 / TMP82C265AF-10

AxC11

Contextual Info: N EC ELECTRONICS INC dEEC ^ t 7 E 1 • tMS7S2S DG3R58b MM3 H N E C E _ 16Mbit Synchronous DRAM_ CONTENTS Programable 3 - stage pipeline. Features.

ES50N18LA2

Abstract: YTX14-BS YTZ10S MOTORCYCLE engine specifications yamaha mt-03 ES14AA2 PT12B YTZ14s GL1800 EXIDE GEL G 210
Contextual Info: 145372_CalCoastAdv 2/23/11 4:07 PM Page 1 145372_CalCoastAdv 2/23/11 4:07 PM Page 2 Sealed Maintenance Free Battery Features Sealed Post Prevents acid leakage, reduces corrosion, and extends battery life safety valve flame/arrestor relieves excess pressure

74190

Abstract: 74LS191 pins ttl 74190 counter 74190 signetics 74190 74191 state diagram 74ls191 function table
Contextual Info: 74190, 191, LS191 Signetics Counters '190 Presettable BCD/Decade Up/Down Counter '191 Presettable 4-Bit Binary Up/Down Counter Product Specification Logic Products FEATURES • Synchronous, reversible counting • BCD/decade—'190 4-bit binary—'191 • Synchronous, reversible counting

1 m preset

Contextual Info: SPEED/PACKAGE AVAILABILITY 54 F,W 54LS F,W PIN CONFIGURATION 74 B 74LS B B,F,W PACKAGE INFUT » .E DESCRIPTION 3 v cc r^ D A T * a This monolithic circuit is a synchronous reversible up/down counter having a complexity of 55 equivalent gates. Synchronous operation is provided by having all flip-flops clocked

AAH002-02

Abstract: AAH GMR sensor AAL002-02 gradiometer AAL002 AA005-02 NVE AA AA002-02 AA003-02 AA004-02
Contextual Info: AA and AB Series Analog Sensors AA and AB Series Analog Sensors NVE’s AA and AB Series analog GMR sensors offer unique and unparalleled magnetic sensing capabilities. These sensors are characterized by high sensitivity to applied magnetic fields, excellent temperature stability, low power consumption, and small size.