DD30 Search Results

DD30GB40

Abstract: DD30GB80
Contextual Info: DIODE MODULE DD KD 30GB40/80 UL;E76102 （M） Power Diode Module DD30GB series are designed for various rectifier circuits. DD30GB has two diode chips connected in series and the mounting base is elctrically isolated from elements for simple heatsink construction. Wide voltage rating up to, 800V

Contextual Info: N AMER PHILIPS/DISCRETE bRE D • bb53R31 DD30372 7SR H A P X Philips Sem iconductors Product Specification PowerMOS transistor TOPFET DESCRIPTION Monolithic temperature and overload protected power MOSFET in a 3 pin plastic envelope, intended as a general purpose switch for

3 diodes 3 phase half-wave rectifier

Abstract: HALF WAVE RECTIFIER CIRCUITS three phase half wave Rectifier DD30GB40 DD30GB80 30gb40
Contextual Info: DIODE MODULE DD KD 30GB40/80 UL;E76102 M Power Diode Module DD30GB series are designed for various rectifier circuits. DD30GB has two diode chips connected in series and the mounting base is elctrically isolated from elements for simple heatsink construction. Wide voltage rating up to, 800V

si2072

Contextual Info: AMERICAN/ ELECTRONIC 03 J> SERIES DD300 Q b 7 b 7 43 G00Gb3fl fl thru DD1200 ELECTRONIC DEVICES, INC. AN A M E R IC A N ELECTRONIC C O M P O N EN TS C O M PA N Y 21 GRAY OAKS AVENUE • YONKERS, NEW YORK 1 0 7 1 0 914-9B5-44D D • FAX S14-F FAST RECOVERY HIGH VOLTAGE 5 mA

Contextual Info: DIODE MODULE DD KD 30HB120/160 UL;E76102 M Power Diode Module DD30HB series are designed for various rectifier circuits. DD30HB has two diode chips connected in series and the mounting base is elctrically isolated from elements for simple heatsink construction. Wide voltage rating up to,

DD300KB120

Abstract: DD300KB160 DD300KB40 DD300KB80
Contextual Info: DIODE MODULE DD300KB UL;E76102 （M） Power Diode Module DD300KB Series are designed for various rectifier circuits. DD300KB has two diode chips connected in series and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating up to,

Contextual Info: 6-3. SEMICONDUCTIVE DIELECTRIC TYPE DD300/DD400 Series 1 Item Operating Temperature Range -25 to +85˚C 2 Capacitance Within specified tolerance. The capacitance shall be measured at 20˚C with 1± 0.2kHz and 0.1Vrms max. SR : 1.0Vrms max. 3 Dissipation Factor (D. F.)

DD30HB120

Abstract: DD30HB160
Contextual Info: DIODE MODULE DD KD 30HB120/160 UL;E76102 M Power Diode Module DD30HB series are designed for various rectifier circuits. DD30HB has two diode chips connected in series and the mounting base is elctrically isolated from elements for simple heatsink construction. Wide voltage rating up to,

100-C

Abstract: BUK482-60A
Contextual Info: N AUER P H I L IP S /D IS C RE TE h'lE J> m bbSB^l DD30727 Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in

DD1800

Abstract: DD1000 DD1200 DD1400 DD1600 DD300 DD600
Contextual Info: DD300 . DD1800 DD300 . DD1800 Fast Switching High Voltage Silicon Rectifier Diodes Schnelle Silizium-Hochspannungs-Gleichrichterdioden Version 2007-03-16 DD1000.1800 24 ±0.1 Ø3 Ø 2.5±0.1 12 ±0.05 +3 Ø 0.5 Ø 0.6 24 27 6.5 ±0.5 ±0.5 27 +3 DD300.600

Contextual Info: DD3076 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current2.5 @Temp (øC) (Test Condition)30’ V(RRM)(V) Rep.Pk.Rev. Voltage400 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.45 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)2.5 @Temp. (øC) (Test Condition)25’

Contextual Info: DD300 . DD1800 DD300 . DD1800 Fast Switching High Voltage Si-Rectifiers Schnelle Si-Hochspannungs-Gleichrichter Version 2005-10-26 24 Ø 2.5 ±0.05 12±0.5 3 . 18 kV Plastic case Kunststoffgehäuse DD300.DD1200 DD1400.DD1800 Ø 2.5 x 6.6 [mm] Ø 3.0 x 12 [mm]

Contextual Info: DD300 … DD1800 Fast Switching High Voltage Si-Rectifiers Schnelle Si-Hochspannungs-Gleichrichter Version 2004-10-01 Ø3 Nominal current Nennstrom ±0.05 20 mA 3000…18000 V Plastic case Kunststoffgehäuse 14 48 -0.5 Repetitive peak reverse voltage Periodische Spitzensperrspannung

Contextual Info: • 17B13bS DD3057M Tbb ■ Or, Call Customer Service at 1-800-548-6132 USA Only BURR - BROW N " E OPA547 OPA548 ] PRELIMINARY INFORMATION SUBJECT TO CHANGE WITHOUT NOTICE DESCRIPTION • WIDE SUPPLY RANGE Single Supply: +8V to +70V Dual Supply: +4V to +35V

Contextual Info: DIODE MODULE DD30HB/KD30HB UL!E76102 M Power Diode Module D D 30 H B series are designed for various rectifier circuits. D D 30 H B has two diode chips connected in series and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating up to 1,600 V is

133/ATMEL 230 24C04

Contextual Info: A R253 10K C308 10uF/6.3V 10K 5 DD30 BAV99 R259 +3.3VD R335 10K +3.3VD HD-VSW0 1 B COVER1 1 2 3 4 5 COVER1 47n 47n 47R C57 47R C58 3906 Q41 1 7 RGB0_RIN- RGB0_GIN- R252 47K C331 R249 C307 1n 100R Jupiter-RST 10uF/6.3V RESET ON_PANEL HOTPLUG 47n R126 R124 RGB0_BIN-

DD1800

Abstract: DD300
Contextual Info: DD300.DD1800 FAST RECOVERY HIGH VOLTAGE SILICON RECTIFIERS Fast Recovery High Voltage Silicon Rectifiers Nominal current 2omA Repetitive peak 3000 to 18000V max. 3.050 reverse voltage Ie Cathode Mark Higher Voltage upon requested Plastic case Dimensions in mm

BC286

Abstract: BC287 transistor Bc287 30E Transistor DD30 transistor BC286
Contextual Info: 3QE » • 7 ci2ti237 DD30ÛÔ3 T ■ r=Z SCS-THOMSON ^ 7# _ ''T*ZC? _ 5« [ i » [ i r a ( » ( g S _ B C 2 8 6 S G S-THOMSON AUDIO AMPLIFIER DESCRIPTION The BC286 is a silicon planar epitaxial NPN trans­ istor in Jedec TO-39 metal case. It is mainly inten­

DD30HB120

Abstract: DD30HB160
Contextual Info: DIODE MODULE DD KD 30HB120/160 UL;E76102 （M） Power Diode Module DD30HB series are designed for various rectifier circuits. DD30HB has two diode chips connected in series and the mounting base is elctrically isolated from elements for simple heatsink construction. Wide voltage rating up to,

Contextual Info: DD300 . DD1800 DD300 . DD1800 Fast Switching High Voltage Si-Rectifiers Schnelle Si-Hochspannungs-Gleichrichter Version 2006-01-13 Ø 2.5 24+3 DD1000.1800 ±0.05 Ø 0.5±0.05 ±0.5 Ø 3±0.05 12 24+3 27 6.5±0.5 27 DD300.600 ±0.05 Ø 0.6 Nominal current

Contextual Info: 3ÜE t ¡Oï S G • T 'îS 'iS a ? DD30121 8 -Z 'M 0! SGS-THOMSON itLiOTtoKS BCY78 BCY79 S-THO M SON LOW NOISE AUDIO AMPLIFIERS DESC RIPTIO N The BCY78 and BCY79 are silicon planar epitaxial PNP transistors in Jedec TO-18 metal case.They are designed for use in audio driver and low-noise

DD30HB120

Abstract: DD30HB160
Contextual Info: DIODE MODULE DD KD 30HB120/160 UL;E76102 （M） Power Diode Module DD30HB series are designed for various rectifier circuits. DD30HB has two diode chips connected in series and the mounting base is elctrically isolated from elements for simple heatsink construction. Wide voltage rating up to,

DD300KB80

Abstract: DD300KB120 DD300KB160 DD300KB40
Contextual Info: DIODE MODULE DD300KB UL;E76102 （M） Power Diode Module DD300KB Series are designed for various rectifier circuits. DD300KB has two diode chips connected in series and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating up to,

k554

Abstract: 200B BUK554-200A BUK554-200B D030 T0220AB
Contextual Info: b'lE T> • N AUER PHILIPS/DISCRETE bbS3T31 DD30flDD D77 » A P X Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.