40120 Search Results

2N2484

Abstract: 2N2483 2N930 DN2484
Contextual Info: TRANSISTOR CHIPS 3 HIGH GAIN - SMALL SIGNAL NPN £ IC - 10/iA 2N2483 40120 X 100% Probe Tested to These Parameters @ 25°C h FE @Vc e = 5 V V cB O V o lts M in. e ic = @lc 100i m a e ic = 1m A 75 Min 175 Min , 10^ A l E =0 60 v ceo V o lts M in. @'c = 10m A

f-30MHz

Abstract: 2N2483 2N2484
Contextual Info: H o TRANSISTOR CHIPS HIGH GAIN - SMALL SIGNAL NPN n oo \ / 100% Probe Tested to These Parameters @ 25°C h FE @VCe = 5V 2N2483 @IC= 10fiA @lc= 100mA @lc = 1mA 40120 75 Min 175 Min VcBO . V CEO Volts Mm;- Volts Min. @lc = @IC= 10mA 10mA •e =0 60 iB=o 60 /

6 volt npn

Abstract: DP2907A transistor 60 volt npn transistor 60 volt DN2219A geometry 450
Contextual Info: T R A N S IS T O R C H IP S 1 M E D IU M C U R R E N T PNP 100% Probe Tested to These Parameters @ 25°C MIN 35 MIN 40120 60 30 5 2N 2218A/21A 25 MIN 35 MIN 40120 70 40 6 2N2219/22 50 MIN 75 MIN 100300 60 30 5 2N 2219A/22A 50 MIN 75 MIN 100300 70 40 6 75 100

2N2219 transistor

Abstract: DN2219A VES-50 volumax C2N2907a
Contextual Info: This TRANSISTOR CHIPS ö M O 1 Material MEDIUM CURRENT PNP •Z. 100% Probe Tested to These Parameters @ 25°C Copyrighted n FE VcBO Volts Min. @lc = 10mA @VCE= 10V IfflQ ■ By 1.0mA o»ic 10mA 150mA 2N2218/21 25 MIN 35 MIN 40120 2N2218A/21A 25 MIN 35 MIN

Contextual Info: TLYH262 TOSHIBA TOSHIBA LED LAMP PANEL CIRCUIT INDICATOR • 3.1mm DIAMETER T l • InG aA fP YELLOW LED • All Plastic Mold Type. • Colorless Clear Lens • InGaAfP YELLOW LIGHT EMISSION TLYH262 U nit in mm Low Drive Current, High Intensity Yellow Light Em ission

Contextual Info: TOSHIBA TLPGA183P T O S H IB A LED L A M P In G a A iP PURE GR EEN LIGHT E M ISS IO N TLPGA183P P A N EL C IRC U IT IN D IC A T O R U nit in mm 5mm DIAM ETER Tl-3 / 4 InG aA fP PU RE G R EEN LED All Plastic Mold Type. Colorless Clear Lens Low Drive Current, High Intensity Pure Green L ight Em ission

Contextual Info: TOSHIBA TLRH190P TOSHIBA LED LAMP PANEL CIRCUIT INDICATOR InGaAfP RED LIGHT EMISSION TLRH1 9 0 P 10mm DIAMETER In G aA iP RED LED A ll P lastic Mold Type. Colorless Clear Lens Low Drive Current, High Intensity Red L ight Em ission Recommended Forward Current : Ip = 1—20mA DC

TLYA157

Contextual Info: TOSHIBA LED Lamp TLYA157 PANEL CIRCUIT INDICATOR 5MM DIAMETER TI-3/4 FEATURES • • • • • New Emission Material (InGaAl P) Yellow LED Peak Wavelength: Xp=590nm All Plastic Mold Type: Colorless Clear Lens. Low Drive Current, High Intensity Yellow Light Emission.

Contextual Info: TOSHIBA TLRH180P T O S H IB A LED L A M P In G a A fP RED LIG H T EM ISSION TLRH180P PAN EL C IR CU IT IN D IC A T O R 5mm DIAM ETER Tl-3 / 4 InG aA fP RED LED All Plastic Mold Type. Colorless Clear Lens Low Drive Current, High Intensity Red Light Em ission

CF 02 94Vo

Abstract: 94v-0 RoHS right angle 68 pin pcb SCSI connector mdr 68 pin configuration 3M SDR 68 pin pcb SCSI connector Twinax carrier lcd 94vo 1XX26 idc 20 pin data ribbon connector
Contextual Info: 3M Interconnect Products Short Form Catalog Comprehensive Solutions Reliable Connections for Complete Solutions for the Electronics Industry 3M Interconnect Solutions offers a comprehensive range of Interconnect Solutions for the electronics industry, with

2N4307

Contextual Info: C o n t ra n Devices. Inc LOW TO MEDIUM VOLTAGE, FAST SWITCHING CHIP NUMBER NPN EPITAXIAL PLANAR POWER TRANSISTOR* * CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum Collector: Gold Polished silicon or "Chrome Nickel Silver" also available Also available on:

O507

Contextual Info: INSERTION LOSS dB AMPLITUDE UNBALANCE <dB) PHASE UNBALANCE (Degrees) ISOLATION (dB) (MHz) TYP/MAX TYP/MAX TYP/MAX TYP/MIN 5 .5 - 16.5 7-14 19-21 0 .3 / 0.5 0 .3/ 0.6 0 .3 / 0.6 0 .2 .0.3 0 .2 .0.3 0 .8 / 1.0 0 .4 / 0.75 0 .4 / 0.75 0 .5 - 0.7 0 .5 - 0.7

2N4071

Abstract: 2N6277 JANTX 2N6277 2N4070
Contextual Info: A POWERHOUSE BIPOLAR Î 11 NPN PLANAR POWER T R A N S IS T O R S PACKAGE T0-204 TO-3 * ’A DEVICE TYPE PEAK ßVcEO 'c VOLTS AMPS VCE (sal) hFE min/max •C @ V CE A V max VOLTS c A @ 'b A 2N4070 100 10.0 40-120 5.0/5.0 0.6 5.0/0.5 2N4071 150 10.0 40-120

2N5006

Abstract: 2N5008 2N5288 2N5317 2N5319 2N5731 2N5957 WALTA
Contextual Info: General Transistor Corporation CASE le max = 10-20A V c e o ( s u s ) = 80-100V NPN Power Transistors ISOLATED COLLECTOR VCEO (aua) M 1C (mm) (A) 2N5006 2N5008 2N5288 2N5289 BO BO 100 100 10 10 10 10 30-90 @5/5 70-200 @ 5/5 30-90 @5/5 70-200 @ 5/5 1.5 @ 10/1

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2N1479

Abstract: 2N1480 2N1481 2N1482 2N1700 2N5781 2N5782 2N5784 2N5785 2N5786
Contextual Info: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863

2n3053A complementary

Abstract: 40362 2N4036 BUX40A 40319 2n4314 2N1893 2N2102 2N2270 2N3053
Contextual Info: THOflSON/ D IS T R IB U T O R SÔE D • =102^073 000572b OflO ■ TCSK Bipolar Power Transistors High-Speed Switching h p E at V c e “ 10V V c E » a t 'V C u rren t - mA T yp e No. v CEO<su9> V vc er (* u ) Pt w V 7W max 2N2102 FA M ILY (n-p-n) 2N697

transistor s71

Abstract: 2N1489 2N5671 2N1487 2N1488 2N1490 2N3055A 2N3713 2N3714 2N3771
Contextual Info: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-3 PACKAGE DEVICE TYPE Vceo sus VOLTS Ic (max) AMPS 1*FE@ I f / V c E V c E (ja t) (min/max @ A/V) @ Ic^B (V @ A/A) p * r D WATTS fT (MHz) NPN 2N1487 40 6 15-45@1.5/4 3@1.5/.3 75 1.0 TO-3 2N1488 55 6 15-45@ 1.5/4

2N5866

Abstract: 2n4348 semiconductor 212S 2N5675 2N5867 2N5872 NES 2N5672 2n5038 2n3447
Contextual Info: NElil ENGLAND SEMICONDUCTOR bSbM ^a S'ìE D dogooss lc M AX — 2-50 A V ceo(sus) = 3 5-5 00 V fT = 0.2-50 MHz NPN TO-3 Case 803 Case 804 PN P Complé­ ment -r-33 -6( Icev @ V ce (mA @ V) Po @ TC = 25 °C (Watts) 025b@30 025b@30 025 @30 025b@30 75 75 75

ESJA52-12A

Abstract: HIGH VOLTAGE DIODE 12kv 22VZ
Contextual Info: 1. SCOPE This specification provide the ratings and the requirements for high voltage silicon diode ESJA52-12A made by FUJI ELECTRIC CO.LTD. 2. OUT VIEW Shape and dimensions are described in Fig. 3. 3. IDENTIFICATION The diode shall be marked with Cathode Mark and Lot No.

XD 102 94V-0

Abstract: xd-102 94v-0 1S113
Contextual Info: ThomasSBetts Two-Piece Connectors XD/P System FOUR ROW, ONE CELL RIGHT ANGLE FEMALE XD/PMCONNECTORS 100-300 POSITIONS NO CENTER MOUNTING FEATURE T O LR49571 02.67 E60980 P h y s ic a l P r o p e r t ie s Insulation Material: Glass filled thermoplastic rated UL 94V-0

B60100

Contextual Info: Electro-Duct Wiring Duct Design features for speed, easy installation and assembly. Mounting Slots Standard at no extra charge on all sizes of duct. Two sizes of oblong mounting holes alternating on their own 2 inch centers. All 1 and 2 inch width duct have one row of slots

MG20002YS40

Contextual Info: MG200Q2YS40 U n i t in m m HIGH P O W E R SW ITC H IN G APPLICATIO N S. M O T O R C O N T R O L APPLICATIO N S. • H igh I n p u t Im pedance • High Speed 4 P a st - on T ub #110 tf = 0 .5 /< s Max. t r r = 0.G/<s(Max.) • Low S a t u r a t i o n V o lta g e

Contextual Info: DRAW ING No.: M 4 0 - 4 0 1 IF IN D O U BT - A S K XX 4 6 R X B +0.20— NOT TO S C A LE 1 6 + 0 .0 5 .0+0.05 i LO o o +l LO O +l O CIRCUIT 1 0. 20 PHOSPHOR BRONZE SEMI-GLOSS TIN t LO <o o +1 -X2.Ç 0 .7 + 0 .0 5 - GO r A d 1.2+0.05- PCB LAYOUT ro X d X NO. OR