4096X1 Search Results

Contextual Info: GEC PLESSEY S I M I O N I IJ (. T () R maskm Radiation Hard 4096x1 Bit Static RAM S C10305FDS Issue 1.3 October 1990 Features • 3nm CMOS-SOS technology KOW Decoder • Latch-up free 64 x M Array • Fast access time 90ns typical • Total dose 10s rad (Si)

am2147 data

Abstract: AM2147-35 AM2147-45 AM2147-55 AM2147-70 AM21L47-45 AM21L47-55 CD000100 AM2147 cd018
Contextual Info: Am2147/Am21 L47 4096x1 Static RAM DISTINCTIVE CHARACTERISTICS High speed — access times down to 35 ns maximum Automatic power-down when deselected Low power dissipation _ High output drive TTL compatible interface levels No power-on current surge GENERAL DESCRIPTION

2147 RAM

Abstract: D2147 2147 4096 bit static RAM 2147L D2147L 613H D2147-3 A2TE CD2147
Contextual Info: DßfFÜ^lOIL 2147 4096 Bit 4096x1 HMOS Static RAM FEATURES GENERAL DESCRIPTION • • • • • • • • The Intersil 2147 is a low power, high-speed 4096-bit static RAM organized 4096 words by 1 bit. It is an advanced version o f the industry standard 2147, fabricated using In­

4402B

Abstract: 4402 semi 4096X1 ON SEMI cross memory device sense amplifier RAM cells bit lines "select line" 4402a
Contextual Info: o rn ili O CIVII x ^n o a n 100, 150 NSEC STATIC D IF F E R E N T IA L OUTPUT N-MOS RAM 4096x1 e > i~ OTLJR □ □ □ □ □ STATIC - NO REFRESH OR CHARGE PUMP OSCILLATOR REQ UIRED 4096 WORD x 1 BIT O R G A N IZA TIO N 100 NSEC ACCESS, 300 NSEC CYCLE - 4402B

9141C

Abstract: L 9141 ess7
Contextual Info: Am9141 -Am91L41 4096x1 Static R/W Random Access Memories G E N E R A L D E S C R IP T IO N D IS T IN C T IV E C H A R A C T E R I S T IC S The A m 9 1 4 1 and A m 9 1 L 4 1 products are high perfor­ mance, low-power, 4k-bit, static, read/write random access

k4096 equivalent

Abstract: transistor k4096 MK4096 ram K4096 WRITE THE FIVE IMPORTANT SPECIFICATION OF TRANSISTOR AC 126 MK4096 K4096 transistor MK4096-16 K4096 compatible MK4096-11
Contextual Info: MOSTEK 4096x1-BIT DYNAMIC RAM MK4096 K/N -6/16/11 FEATURES □ Industry standard 16-pin DIP configuration □ Inputs protected against static charge (available in plastic (N) and ceramic (K) packages) □ □ All inputs are low capacitance and T T L compatible

"Single-Port RAM"

Contextual Info: New Products FPGAs New Spartan-IIE FPGA Family for Digital Consumer Convergence Applications Spartan-IIE FPGAs offer significant performance improvements for nextgeneration consumer products. Table 2. The memory block can be used as 4096x1, 2048x2, 1024x4, 512x8, or

VT6528

Abstract: 100BASE-X MDIO phy gvrp PHY 2078 ss smii MII switch "Spanning Tree"
Contextual Info: BLOCK DIAGRAM： Jumpers 2-pin EEPROM Initialization Controller MDCx, MDIO LED outputs PHY Management Interface LED Controller 8K+256 MAC Table 4K VLAN Table 1K Multicast Table 256 L2+ Rule/Action 4Mb Packet Buffer 4096x128-Byte Packet Buffer Management Unit

Contextual Info: ADV M IC RO A m MEMORY IME d | 0ES75SÔ Q027S45 7 £ 1 Advanced Micro Devices 2 1 4 7 / A m 21 L 4 7 4096x1 Static RAM DISTINCTIVE C H A RA CTERISTICS • High speed — access times down to 35 ns maximum • Automatic power-down when deselected • Low power dissipation

S4017

Abstract: vmos S4017-3 4096X1
Contextual Info: PRELIMINARY AMI S4017 4 0 9 6 BIT 4096x1 HIGH SPEED STATIC VM O S RAM Features General Description □ The AMI S4017 is a high speed 4 0 9 6 b it fully static RAM organized as 4 0 9 6 o ne-bit w ords. The device is fully TTL com p atib le and has a single + 5V pow er

4Kx1 SRAM

Abstract: KS000010 AM9044 AM9044B AM9044C AM9044D AM90L44B AM90L44C
Contextual Info: a Am9044/AM90L44 Advanced Micro Devices 4096x1 Static RAM DISTINCTIVE CHARACTERISTICS • Low operating and standby power • Access times down to 200 ns • Am9044 is a direct plug-in replacement for 4044 • High output drive — 4.0 mA sink current @ 0.4 V

3539

Abstract: 4725B 4710B 4720B F16K3 F16K4 F16K5 M40272 M40273 M40274
Contextual Info: 4096x1 4096x1 - •n fO «i MOS 16,384x1 CO ro 1024x4 -fck M 40272 cn 4096x1 o> 4096x1 -4 16,384x1 Item S CD Ô o 3 a Description H > z o Access Time ns Max Cycle Time ns (Min) 2 > o o m CO Power Dissipation mW (Max) S 2 m 5 X o O CD 3 O) ro O) 03 oo 03

4027 ram

Abstract: 4096X1 4027 pin diagram CD 4027 MK4027 MK4027-1 MK4027-2 MK4027-3 4096X1-BIT MK4096
Contextual Info: MOSTEK 4096x1-BIT DYNAMIC RAM M K 40 27 J/N -2/3 FEATURES □ Industry standard configuration □ 120ns access time, 150ns access time, 200ns access time, □ Improved performance w ith "gated CAS", "RAS o n ly " refresh and page mode capability 16-pin DIP (MK 4096)

M4027

Abstract: 4725B 4710B 4720B F16K3 F16K4 F16K5 M40272 M40273 M40274
Contextual Info: •n fO «i MOS 4096x1 1024x4 4096x1 - M 40272 16,384x1 CO ro 4096x1 -fck 4096x1 cn M40273 Item 9 00 1. 03 03 > DEVICE NO. S CD Ô o 3 a Description H > z o Access Time ns (Max) Cycle Time ns (Min) 2 > o o m CO w Power Dissipation mW (Max) S 2 m 5 o X O

L41C

Abstract: AM9141BDC AM91L41CDC
Contextual Info: Am9141 *Am91L41 4096x1 Static R/W Random Access Memories D IS T IN C T IV E C H A R A C T E R IS T IC S G E N E R A L D E S C R IP T IO N • • • • • T h e A m 9 1 4 1 and A m 9 1 L 4 1 p ro d u c ts are high p e rfo r­ m ance, lo w -p o w e r, 4 k - b it, s ta tic , re a d /w rite ra n d o m access

bk p36

Abstract: 1024x1 static ram 16x4-Bit 4710B 4720B 4725B F16K3 F16K4 F16K5 M40272
Contextual Info: •n fO «i MOS 4096x1 1024x4 4096x1 - M40272 16,384x1 CO ro 4096x1 -fck 4096x1 cn Item o 0 o Organization s o (O Ô o 3 a Description Access Time ns (Max Cycle Time ns (Min) Power Dissipation mW (Max) S A H > z o 2 > o o m CO 2 m 5 o X k k k k k oo O 03

4720B

Abstract: F16K4 4710B 4725B F16K3 F16K5 M40272 M40273 M40274 M40275
Contextual Info: •n fO «i MOS 4096x1 1024x4 4096x1 - M 40272 16,384x1 CO ro 4096x1 -fck 4096x1 cn Item S CD Ô o 3 a Description H > z o Access Time ns Max Cycle Time ns (Min) 2 > o o m CO Power Dissipation mW (Max) S 2 m 5 X o O CD 3 O) ro O) 03 oo 03 o> M45 M44 M43

4096X1-BIT

Abstract: HM6504 IM6504 MCM146504 4096X1
Contextual Info: g M O T O R O L A Product Preview CMOS LSI 4096X1-BIT STATIC RAN D O M ACCESS M EM O R IES (L O W -P O W E R C O M P L E M E N T A R Y M O S ) The M C M 1 4 6 5 0 4 is a 4 0 9 6 X 1 *b it static random access memory, fabricated with high density, high reliability C M O S silicon-gate

FAIRCHILD 40963

Abstract: CI 4096 led strobe light circuit diagram 4096DC fairchild mos 40964 vqb 71
Contextual Info: i 1 \ , /• , n i \ (T \ j . ^ ' 4096 4096x1 DYNAMIC RANDOM ACCESS MEMORY G E N E R A L D E S C R IP T IO N — Th e 4Q96DC is a 4 0 9 6 b it dynam ic Random Access Mem­ o ry organized as 4 0 9 6 one-bit words. T h is device is designed u tilizing the single transistor

a8le

Abstract: AM9140ADC 9140B AM9140ADM
Contextual Info: Am9140 •Am91L40 4096x1 Static R/W Random Access Memories GENERAL DESCRIPTION DISTINCTIVE CHARACTERISTICS The Am9140 and Am91L40 products are high performance, adaptive, low-power, 4k-bit, static, read/write random access memories. They are implemented as 4096 words by 1 bits per

M90-44

Abstract: cd018 AM0OL44B
Contextual Info: Am9044/AM90L44 Advanced Micro Devices 4096x1 Static RAM DISTINCTIVE CHARACTERISTICS • • • • • Low operating and standby power Access times down to 200 ns Am9044 is a direct plug-in replacement for 4044 High output drive — 4.0 mA sink current @ 0.4 V

AM21

Contextual Info: a Am21 L41 Advanced Micro Devices 4096x1 Static RAM DISTINCTIVE CHARACTERISTICS • • • Fully static storage and interface circuitry Automatic power-down when deselected Low power dissipation - Am21L41; 220 mW active, 27.5 mW power down • High output drive

4200D

Abstract: WRITE THE FIVE IMPORTANT SPECIFICATION OF TRANSISTOR AC 126 4096X1-BIT
Contextual Info: MOSTEK 4096x1-BIT DYNAMIC RAM MK4200 K/N -11/16 FE A TU R E S □ In d u stry standard 16-pin DIP co n fig u ra tio n (available in plastic (N) and ceramic (K) packages) □ A ll inputs are lo w capacitance and T T L com p atib le, except RAS (MOS level) □

Contextual Info: CMOS SyncFlFO 256 X 18, 512 X 18,1024 x 18, 2048 x 18 and 4096x18 IDT72205LB IDT72215LB IDT72225LB IDT72235LB IDT72245LB Integrated Device Technology, inc. FEATURES: • • • • • • • • • • • • • 256 x 18-bit organization array 72205LB