4164 DYNAMIC Search Results

IC 4164

Abstract: 4164-2 RAM 4164 ram 4164 ram mos 4164 4164-2 HYB4164 RAM 4164 4164 eve
Contextual Info: SIEM EN S HYB 4164-1, HYB 4164-2, HYB 4164-3 65,536-Bit Dynamic Random Access Memory RAM • 65,536 X1 bit organization • All inputs and outputs T T L com patible • Industry standard 16-pin JE D E C configuration • High over- and undershooting capability

4164 ram

Abstract: HYB4164 4164-2 RAM HYB4164-P2 4164 4164 dynamic ram siemens hyb4164 4164-2 RAM 4164 HYB4164-1
Contextual Info: SIEM ENS HYB 4164-1, HYB 4164-2, HYB 4164-3 65,536-Bit Dynamic Random Access Memory RAM • 65,536 X1 b it organization • • A ll inputs and outputs TTL com patible • High over- and undershooting capability on all inputs • Low supply current transients

Sonitron

Abstract: MAX9738 piezo speaker piezoelectric actuator ceramic speaker piezoelectric film piezo speaker datasheet piezoelectric speakers amplifier advantages and disadvantages APP4164
Contextual Info: Maxim > App Notes > AMPLIFIER AND COMPARATOR CIRCUITS AUDIO CIRCUITS Feb 05, 2008 Keywords: ceramic, piezo, speakers, class g, audio, cellular, cell phones APPLICATION NOTE 4164 Amplifier Considerations in Ceramic Speaker Applications Abstract: New cell phone designs demand small form factor while maintaining audio sound-pressure level.

VD-3-35

Abstract: MM5747 VD-3-54 papst 24v 24Vdc motor speed control 35414 of 24 volts 60 rpm dc motor one direction dc motor control circuit VD-3-43 dc motor 60 rpm AT 24V
Contextual Info: Issued November 1997 262-1261 Data Pack B Variodrive dc brushless motors & controllers Data Sheet RS stock numbers 225-4142, 225-4158, 225-4164, 225-4186, 225-4192, 225-4209 Introduction The Variodrive is a range of small motors and controllers designed to work together, to create an integrated drive and

SN76477

Abstract: TNY 176 PN EQUIVALENT 2n4401 free transistor equivalent book tis43 XR2206 application notes Semiconductor Data Handbook mj802 2N3866 s2p bc149c TIP35C TIP36C sub amplifier circuit diagram LM131
Contextual Info: From the Publishers of ETI & HE HEM M iNqs E U c t r o n ic s L rd Electronic C om ponents Et M icrocom puters 16 BRAND STREET, HITCHIN, HERTS, SG5 1JE Telephone: 0462 33031 memories 2114L 2708 2716 2532 2732 4116 4164 6116P3 6116LP3 •Op 220p 210p 380p

TMS4164A

Abstract: TM41 TM4164 TMS4416 RAM 4164 TM41 diode TM4164EL9 pj 889 diode
Contextual Info: TM4164EL9, TM4164FM9 65,536 BY 9-BIT DYNAMIC RAM MODULES NOVEMBER 1 9 8 3 - 6 5 ,5 3 6 X 9 Organization REVISED NOVEMBER 1 9 8 5 TM 4164EL9 . . . L SINGLE-IN-LINE PACKAGE* T M 4164 F M 9 . . . M SINGLE-IN-LINE PACKAGE Single 5 -V Supply 1 0 % Tolerance (TOP VIEW)

Contextual Info: TM4164EL9, TM4164FM9 65,536 BY 9-BIT DYNAMIC RAM MODULES NOVEMBER 1 9 8 3 - 6 5 ,5 3 6 X 9 Organization REVISED NOVEMBER 1 9 8 5 TM 4164E L9 . . . L SINGLE-IN-LINE PACKAGEf T M 4164 F M 9 . . . M SINGLE-IN-LINE PACKAGE Single 5-V Supply 10% Tolerance (TOP VIEW)

VD-3-54

Abstract: VD-3-35 papst 24v MM5747 DC Motor speed control sensors working VD-3-43 motor winding copper coil data 937-140 brushless dc motor speed control Hall 3 phase DC motor speed control circuit
Contextual Info: Issued November 1996 229-7593 Data Pack B Variodrive dc brushless motors & controllers Data Sheet RS stock numbers 225-4142, 225-4158, 225-4164, 225-4186, 225-4192, 225-4209 Introduction The Variodrive is a range of small motors and controllers designed to work together, to create an integrated drive and

sense amplifier bitline memory device

Abstract: F4164 F4164-1 F4164-2 F4164-3
Contextual Info: F 4164 6 5 ,5 3 6 x 1 Dynamic RAM MOS Memory Products Logic Symbol Description The F4 1 6 4 is a dynamic Random A c c e s s Memory RAM circuit organized a s 6 5 ,5 3 6 single-bit words. This memory u ses the Fairchild advanced double poly NMOS, Isoplanar-H p ro cess which allows

16K-BIT

Abstract: a316
Contextual Info: 15 - % Din iS - ÜAS W rite RAS AO A2 w “ &ßjt 13 “ AB 12 - A3 H - A4 l o k A5 Al VfK V ss _ i r v« 4116 2164. 16> 5 - CAS ìv " Dqu» W - A6 A3 - A4 1 0 - A5 ir 4164 A7 Rys. 1.38 Topografia wyprowadzeñ w uktadach pamiçci dynamicznej 16 Kbit i 64 Kbit. Do

PEB 4165 T

Abstract: AC GENERATOR PEB 3465 V1.2 PEB 3465 PEB 4166 T
Contextual Info: A pplic ation N ote, D S2, Jan. 2001 MuSLIC Multichannel Subscriber Line Interface Concept PEB 3465 V 1.2 PEB 31666/31665/31664 V1.3 PEB 4166/4165/4164 V2.3 Coefficient Handling of MuSLIC Chipset Wired Communications N e v e r s t o p t h i n k i n g . Edition 2001-01-15

MK4164-15

Abstract: mostek MK4164 MK4116 MK4164 MK4096 MK4164-12 MK4516 MK4096 ram mostek system development board MK-4096
Contextual Info: MOSTEK 65,536 x 1 -BIT DYNAMIC RAM M K 4164 N /E -12/15 FEATURES n C o m m o n I / O c a p a b ility u s in g " e a r ly w r i t e " □ R e c o g n iz e d in d u s tr y s ta n d a r d 1 6 -p in c o n fig u r a tio n □ R ead, W r ite , fro m M o s te k

4164 ram

Abstract: 4164 dynamic ram RAM 4164 4Q709 4164 4164 (RAM)
Contextual Info: TEXAS IN STR { A S I C / M E M O R Y J- 7 7 Ö961725 TEXAS INSTR CASIC/MEMORY D E| 8^1755 D 04 G 7D t , 77C 4 0 7 0 6 3 D TM4164EL9, TM4164FM9 65,536 BY 9-BIT DYNAMIC RAM MODULES NOVEMBER 1983 - REVISED NOVEMBER 1986 6 5 ,5 3 6 X 9 Organization TM 4164EL9 . . . L SINGLE-IN-UNE PACKAGE*

4164 ram

Abstract: IC 4164 DYNAMIC RAM 65536 TEXAS tms4164 RAM 4164 4164 (RAM)
Contextual Info: TEXAS INSTR -CASIC/flEMORY} 77 DE§ 0Tbl7SS 0040737 3 0 9 6 1 7 2 5 TEXAS INSTR <ASIC/MEMORY T7C 4 0 7 3 7 TM4164FL8, TM4164FM8 65.536 BY 8-BIT DYNAMIC RAM MODULES NOVEMBER 1983 - REVISED NOVEMBER 1985 TM 4164FL8 . TM 4164FM 8 6 5,5 36 X 8 Organization Single 5-V Supply 10% Tolerance)

4164-12

Abstract: NEC 4164 PD4164 4164-10 LPD416
Contextual Info: NEC |jl,PD4164 6 5,536 x 1-BIT DYNAMIC NMOS RAM NEC Electronics Inc. Revision 4 Description Pin Configuration The N EC J.PD4164 is a 65,536-word by 1-bit dynamic N-channel MOS R andom -access M em ory (RAM designed to operate from a single + 5V power supply. The negativevoltage substrate bias is internally generated providing both

ZR25D01

Contextual Info: PRECISION 2.5 VOLT MICROPOWER VOLTAGE REFERENCE ZR25D ISSUE 2 - FEBRUARY 1998 DEVICE DESCRIPTION FEATURES The ZR25D uses a bandgap circuit design to achieve a pre cisio n m icro p o w e r voltage reference o f 2.5 volts. The device is available in a sm all outline SOT23 surface m ount

ZR25D01

Abstract: 163 sot23 ZR25D ZR25D02 SOT23 25N
Contextual Info: PRECISION 2.5 VOLT MICROPOWER VOLTAGE REFERENCE ZR25D ISSUE 2 - FEBRUARY 1998 DEVICE DESCRIPTION FEATURES The ZR25D uses a bandgap circuit design to achieve a precision micropower voltage reference of 2.5 volts. The device is available in a small outline SOT23 surface mount

ZRC250

Abstract: 253 SOT23
Contextual Info: Not Recommended for New Design Please Use ZRC250F01 /02 /03 PRECISION 2.5 VOLT MICROPOWER VOLTAGE REFERENCE ZR25D ISSUE 2 - FEBRUARY 1998 DEVICE DESCRIPTION FEATURES The ZR25D uses a bandgap circuit design to achieve a precision micropower voltage reference of 2.5 volts. The device is available

SMW45N10

Contextual Info: SMW45N10 erSiScanix ^LJP incorporated N-Channel Enhancement Mode Transistor TO-247 AD TOP VIEW PRODUCT SUMMARY V BR DSS 100 r DS(ON) •d (Cl) (A) 0.040 45 1 GATE 2 DRAIN 3 SOURCE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

TF210

Contextual Info: CEP8060LR/CEB8060LR PRELIMINARY N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES • 6 0 V , 8 0 A , R ds o n =9.0 itiQ RDS(ON)=12.0m£i @ V gs =1 0 V . @ V gs= 5V. • Super high dense cell design for extremely low R d s (o n ). • High power and current handling capability.

Contextual Info: CEP21A2/CEB21A2 PRELIMINARY 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 20V , 25A , RDS ON =40mΩ @VGS=10V. RDS(ON)=70m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability.

5K4164ANP-20

Contextual Info: MITSUBISHI LSIs M 5K4164ANP-20 6 5 5 3 6 -B IT 6 5 5 3 6 - WORD B Y 1-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) T his is a fa m ily o f 65536-word b y 1-bit d y n a m ic R A M s , fab ricate d w ith the high p erform ance N-channel silicongate

cfk logic chip

Abstract: 419AK
Contextual Info: Temic DG417/418/419 S e m i c o n d u c t o r s Precision CMOS Analog Switches Features Benefits Applications • • • • • • • • Wide Dynamic Range • Low Signal Errors and Distortion • Break-Before-Make Switching Action • Simple Interfacing

A7c DIODE

Abstract: 74AHCT 113B8 74als power consumption
Contextual Info: Zytrex ZX54AHCT ZX74AHCT 640 ?* "cT643 Octal Bus Transceivers February 1985 OBJECTIVE SPECIFICATIONS . Features Description • Function, pin-out, speed and drive compatibility with 54/74ALS logic family These high-speed octal bus transceivers are designed