416400 Search Results

NTC 20D-20

Abstract: 7400P s427400 IC TTL 7400 input leakage current 6400P/P1L-6400/6460/6480P
Contextual Info: TMS41 6400, TMS41 6400P, TMS41 7400, TMS41 7400P T M S 426400, TMS426400P, T M S 427400 , T M S 4 2 7 4 0 0 P 41 9 4 3 0 4 -W Q R D B Y 4-BIT H IG H -S P E E D D R A M S SMKS881B - MAY 1995 - REVISED AUGUST 1995 Electrical characteristics for T M S 416400/P and

Contextual Info: 416400 4194304-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY SGMS042D - MARCH 1982 - REVISED JUNE 1995 Organization . . . 4194304 x 4 FNC PACKAGE TOP VIEW Single 5-V Power Supply (10% Tolerance) Performance Ranges: '416400-70 ’416400-80 '418400-10 ACCESS ACCESS ACCESS READ

21D10

Abstract: T 2109 tcp 8111 SMJ416400 Hanna Instruments 199S
Contextual Info: 416400 4194304-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY SGMS042D - MARCH 1992 - REVISED JUNE 1995 '416400-70 '416400-80 ’416400-10 SV PACKAGE TOP VIEW FNC PACKAGE (TOP VIEW) Organization . . . 4194304 x 4 Single 5-V Power Supply (10% Tolerance) Performance Ranges:

STR 20012 DATA

Contextual Info: 416400 4194304 BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY _ SQMSQ42E- MARCH 1 9 9 2 -REVISED MARCH 1986 Organization . . . 4194304 x 4 Single 5-V Power Supply 10% Tolerance Performance Ranges; '416400-70 '416400-80 '416400-10 FNC PACKAGE (TOP VIEW)

SMJ416400

Abstract: 21D0 416400
Contextual Info: 416400 4194304 BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY SGMS042E – MARCH 1992 – REVISED MARCH 1996 D D D D D D D D D D Organization . . . 4 194 304 x 4 Single 5-V Power Supply 10% Tolerance Performance Ranges: ’416400 - 70 ’416400 - 80 ’416400 -10

M5M417405CJ

Abstract: M5M417800 MSM417805CJ-7 M5M417800CTP-7 M5M417405CTP-5 M5M418165CTP-5 M5M417405CJ-6 417805CJ-5 m5m416100cj M5M417800CTP
Contextual Info: MEMORIES • 16M-Bit DYNAMIC RAMs ■A . . , . • Memory [ Memory capacityj Configuration _ L . Function mode . M ix. access time ns Typ. power 50 495 60 405 Fast Page 16Mx1 4K Refresh Cycle Self Refresh (— * Si 70 340 50 495 60 405 70 340 50 495 Fast Page

Contextual Info: MITSUBISHI LSIs M 5 M 4 1 6 4 B J , T P - 5 , - 6 , - 7 , - 5 S , - 6 S , - 7 S FAST PAGE MODE 16777216 -B IT 4194304-WQRD BY 4-BIT DYNAMIC RAM DESCRIPTION This is a family of 4194304-word by 4-bit dynamic RAMS, fabricated with the high performance CMOS process,and is ideal

Contextual Info: MITSUBISHI LS Is <DRAM MODULE M H4M724CTJ-6,-7 FAST PAGE MODE 301989888-BIT 4194304-WORD BY 72-BIT) DYNAMIC RAM DESCRIPTION The M H 4M 724C TJ is 4 1 94304-w ord x 72-bit dynamic RAM module. This consists o f eighteen industry standard 4M x 4 dynamic RAMs in TSOP and tw o industry standard input

M5M416400BJ

Contextual Info: MITSUBISHI LSIs M 5 W I4 1 6 4 0 0 B J ,T P ,R T - 5 ,- 6 ,- 7 ,- 5 S ,- 6 S ,- 7 S FAST PAGE MODE 16777216-BIT 4194304-WQRD BY 4-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (T O P V IE W ) This is a family of 4194304-w ord by 4-bit dynamic RAMS, fabricated with the high performance CMOS process,and is ideal

QML-38535

Abstract: SMJ416400-80SV C700 MIL-PRF38535 SMJ416400-70FNCM 5962-9231203MYA
Contextual Info: REVISIONS LTR DESCRIPTION A DATE YR-MO-DA Boilerplate update and part of five year review. tcr 06-07-05 APPROVED Raymond Monnin REV SHEET REV A A A A A A A A A A A A A A A A A A A A SHEET 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 REV STATUS

77261

Abstract: trc 20020
Contextual Info: 416400A, TMS417400A 4194304 BY 4-BTT DYNAMIC RANDOM-ACCESS MEMORIES _ SM KSa89B- AUGUST 1996 - REVISED OCTOBER 1997 This data sheet is applicable to all TMS41x400As symbolized by Revision “B”, Revision “E” and subsequent revisions as

M4164

Abstract: EZ 728 ST ez 724 ST EZ 728
Contextual Info: M 5 M 4 1 6 4 0 0 B J ,T P ,R T - 5 ,- 6 ,- 7 ,- 5 S ,- 6 S ,- 7 S FAST PAGE MODE 16777216-BIT 4194304-WORD BY 4-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION ( TOP VIEW ) This is a family of 4194304-w o rd by 4-bit dynamic R AM S, fabricated with the high performance C M O S process,and is ideal

417400

Abstract: TMS416400 TMS416400P TMS417400 TMS417400P TMS426400 TMS426400P TMS427400 TMS427400P
Contextual Info: 416400, 416400P, TMS417400, TMS417400P TMS426400, TMS426400P, TMS427400, TMS427400P 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS SMKS881B – MAY 1995 – REVISED AUGUST 1995 D D D D D D D D D D D Electrical characteristics for 416400/P and TMS417400/P is Production Data. Electrical

Contextual Info: MITSUBISHI LS Is <DRAM MODULE MH4M724CTJ-6,-7 FAST PAGE MODE 301989888-BIT 4194304-WQRD BY 72-BIT) DYNAMIC RAM DESCRIPTION The MH4M724CTJ is 4194304-word x 72-bit dynamic RAM module. This consists of eighteen industry standard 4M x 4 dynamic RAMs in TSOP and two industry standard input

407257-1

Abstract: 164589 028-7428 03601-30 74676 0674068 141898 1606445 74127 60034
Contextual Info: Narrow Wide Plots Back to RFM Website S-Parameter Narrow "RF1172C, 7/10/02 " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " 427.411200 -.1873169, -.1873474, -.1869202, -.1868591,

21D10

Abstract: 21D0 SMJ416400 ras 0910
Contextual Info: 416400 4194304-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY SGMS042E – MARCH 1992 – REVISED MARCH 1996 D D D D D D D D D D Organization . . . 4 194 304 x 4 Single 5-V Power Supply 10% Tolerance Performance Ranges: ’416400 - 70 ’416400 - 80 ’416400 -10

417400

Abstract: PDSO-G24 Package TMS416400 TMS416400P TMS417400 TMS417400P TMS426400 TMS426400P TMS427400 TMS427400P
Contextual Info: 416400, 416400P, TMS417400, TMS417400P TMS426400, TMS426400P, TMS427400, TMS427400P 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS SMKS881B – MAY 1995 – REVISED AUGUST 1995 D D D D D D D D D D D Electrical characteristics for 416400/P and TMS417400/P is Production Data. Electrical

Contextual Info: b24*ifl25 QOSMOl f l 44Q • MIT1 MITSUBISHILSIs M 5 M 4 1 6 4 0 0 A J ,T P ,R T -5 ,-6 ,-7 FAST PAGE MODE 16777216-BIT 4194304-WQRD BY 4-BIT DYNAMIC RAM DESCRIPTION This is a family o f 4194304-word by 4-bit dynamic RAMs, PIN CONFIGURATION (TOP VIEW) fabricated with the high performance CMOS process, and is

7400A

Abstract: S889A
Contextual Info: 416400A, TMS417400A T M S 4 2 6 4 0 0 A , TMS 4 26 4 00 A P, T M S 4 2 7 4 0 0 A , T M S 4 2 7 4 0 0 A P 4 1 9 4 3 Q 4- W O RD BY 4-BI T H I G H - S P E E D D R A M S SMKS889A-AUGUST 1 9 9 6 -REVISED FEBRUARY 1997 This data sheet is applicable to all TMS41x400As

Contextual Info: 416400 4194 304-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY SGMS042A-MARCH 1992-RE VISED NOVEMBER 1992 Organization . . . 4 194 304 x 4 FNC PACKAGEÎ TOP VIEW Single 5-V Power Supply (10% Tolerance) Performance Ranges: 416400-60 416400-70 416400-80

Contextual Info: b 2 4 TÔ2 5 IMITI 0 0 2 4 DD1 1 4 7 MITSUBISHI LS Is M 5 M 4 1 6 4 0 0 J , T P , R T - 6 , - 7 , - 8 FAST PAGE MODE 16777216-BIT 4194304-WORD BY 4-BIT DYNAMIC RAM DESCRIPTION This is a family of 4194304-w ord by 4-bit dynamic RAMS, PIN CONFIGURATION (TOP VIEW)

M5M416400C

Contextual Info: M ITSU BISHI LSIs P , * 2 ‘£ s " e" M * x * 5 M 4 1 6 4 0 0 C J , T DESCRIPTION PIN CONFIGURATION TOP VIEW vcc [T O FEATURES 416400CXX*6,-6S 416400CXX-7.-7S 50 60 70 13 15 20 25 30 35 Power dissipa­ tion (min.ns) (typ.mW) Cycle time 13 15 90 110

headland

Abstract: headland technology Headland Technology gc101 Headland HT-101 LN 9499 headland 286 GC101 GC102 GC103 LIM EMS 4.0
Contextual Info: HEADLAND TECHNOLOGY INC 1?E D 43b77QE Q00033D T Headland Technology GC103 n n n i * i i m a DV EMS 4.0 Controller and Address Buffer G2 Product Line PRELIMINARY. DESCRIPTION FEATURES Hardware implementation of LIM EMS Version 4.0 Includes E xpanded M emory

M4164

Contextual Info: MITSUBISHI LS Is <DRAM MODULE FAST PAGE MODE DYNAMIC RAM 8M X 40 320 M BIT M ax. A ccess Type O u tw a rd Load nam e d im e n s io n s D a ta sheet m e m o ry tim e W X H X D m m ) page 8 6 .2 6 X 2 3 .3 9 X 15 3 /1 9 (n s ) MH8M40AJD-6 * 60 MH8M40AJD-7