4194 Search Results

TM4SN64EPN10

Abstract: TM2SN64EPN-10 TM48N64EPN TM4SN64EPN-10 TMS626812
Contextual Info: TM2SN64EPN 2097152 BY 64-BIT TM4SN64EPN 4194304 BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULES _ SYNCHRONOUS CLOCK CYCLE TIME *CK3 , {CL = 3 t ACCESS TIME CLOCK TO OUTPUT >CK2 CL = 2) *CK3 (CL = 3) *CK2 (CL = 2) • • • • • • • •

cd018

Contextual Info: TMS28F033 4194304-BIT SYNCHRONOUS FLASH MEMORY _ SM JS633 - NOVEMBER 1997 PAF 80-PIN PACKAGE TOP VIEW 8 X to. > i> 5 ¡r lo o Ear IS IS IS |w lo I * 0017 C D018 C DQ19 C VDDE C VSSE C OQ20 C 0Q21 C 0Q22 C DQ23 C DQ24 C DQ25 C

s29f

Contextual Info: TMS29F040 4194304-BIT FLASH MEMORY S M J S 8 2 0 A - A P R IL 1 9 9 6 - R E V IS E D J A N U A R Y 1 9 9 7 I * Single Power Supply 5 V ± 10% FM PACKAGE T O P V IE W cm lo co co O r~. < < < < > I5 < i— i l — i l — il— i l — i l — il— i 4 '

Contextual Info: TM4EP72BPB, TM4EP72BJB, 4194304 BY 72-BIT TM4EP72CPB, TM4EP72CJB 4194304 BY 72-BIT EXTENDED-DATA-OUT BUFFERED DYNAMIC RAM MODULES _ _ • • • • Long Refresh Periods: - TM4EP72CxB: 64 ms 4096 Cycles

Contextual Info: TMS44100, TMS44100P 4194304-BIT DYNAMIC RANDOM-ACCESS MEMORY SMHS410F-SEPTEMBER 1989-REVISED DECEMBER 1992 Single 5-V Power Supply ±10% Tolerance Performance Ranges: ACCESS ACCESS ACCESS SD P AC K A G E t (TOP VIEW) DJ P A C K A G E t (TOP VIEW) Organization . . . 4194 304 x 1

Contextual Info: TM4EN64KPU, TM4EN64NPU 4194304 BY 64-BIT TM8EN64KPU, TM8EN64NPU 8388608 BY 64-BIT EXTENDED-DATA-OUT DYNAMIC RAM MODULES SMMS692 - AUGUST 1997 Organization - TM4EN64xPU-xx . , . 4194304 x 64 Bits - TM8EN64xPU-xx . . . 8388608 x 64 Bits

SMJ416400

Abstract: 21D0 416400
Contextual Info: SMJ416400 4194304 BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY SGMS042E – MARCH 1992 – REVISED MARCH 1996 D D D D D D D D D D Organization . . . 4 194 304 x 4 Single 5-V Power Supply 10% Tolerance Performance Ranges: ’416400 - 70 ’416400 - 80 ’416400 -10

LC7800

Abstract: LC7651 SANYO lc7800 pa 3029a LC7800N 31-25mS step motor driver 4194304hz
Contextual Info: SANYO SE MI CONDU CT OR CORP 7b D e J 7CH7[ 7L. ODO ITS ? 7 i ~ D 'ï T - t f 9 ~ / 5 •Ó2L f- à " Z - 3 i ' 0 3 LC7650.7651 . c-mos IC •C IR C U IT D R A W IN G 'N o .4 O 0 6 ANALOG CLOCK STEP MOTOR DRIVER 3001A Features • Oscillation frequency: 4194304Hz

Contextual Info: RENESAS LSIs 2003.08.21 Ver. 7.0 M5M5V416CWG -55HI, -70HI 4194304-BIT 262144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION FEATURES The M5M5V416CWG is a f amily of low v oltage 4-Mbit static RAMs organized as 262144-words by 16-bit, f abricated by Renesas's

STK 100W

Abstract: 4204M STK 60w 5 4154M 4144M STK4234 circuit STK 300 STK4234 4194MK5 4145M
Contextual Info: • Main Characteristics ■ STK4144MK2 series/STK4144MK5 series/STK4145MK2 series/S T \ 4 1 4 5 M K 5 series Type Number STK 4144M K 2 STK 4154M K 2 STK 4164M K 2 STK 4174M K 2 Output power PofW] 25 30 35 40 + + + + Vcc max[V] 25 30 35 40 STK 4184M K 2 & STK 4194M K 2

TMS44101

Contextual Info: TMS44101 4194 304-BIT DYNAMIC RANDOM-ACCESS MEMORY REV A — SMHS411 — JA N U A R Y 1991 Organization . . . 4 194 304 x DC w C RAS C 1 1 ^ 2 3 Z 4 NC A 10 C 5 Single 5-V Power Supply ±10% Tolerance Performance Ranges: A0 C 9 A1 C 10 A2 C 11 READ ACCESS ACCESS ACCESS

TMS417409A

Contextual Info: TMS416409A, TMS417409A TMS426409A, TMS427409A 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS SMKS893B - AUGUST 1996 - REVISED APRIL 1997 I I I I I This data sheet is applicable to a ll TMS41x409As and TMS42x409As symbolized by Revision “B ”, Revision “E ”, and subsequent

Contextual Info: HM671400H Series 4,194,304-words x 1-bit High Speed Static Random Access Memory HITACHI ADE-203-086G Z Rev. 8 Aug. 28, 1996 Features • • • • • • • 4194304-words X 1 bit organization Directly TTL compatible input and output +5.0 V Single Supply

BL 3030L

Contextual Info: fc>lE J> m 44TbED3 D D E l i n E3E • H I T E HM621400 Series- Preliminary 4194304-word x 1-bit High Speed CMOS Static RAM The Hitachi HM621400 is a high speed CMOS static RAM organized 4 Mword x lbit. It realizes higher performance and low power consumption

bowmar

Contextual Info: T ech n o lo M 0D ELM 4194K bit I ±~«4SS FEATURES User Configurable 3 Modes: 512K Bytes x 8 Bits 256K Bytes x 16 Bits 128K Bytes x 32 Bits Single Power, 5.0 Volts Operation Low Power Standby Compatible with all Microprocessors 100% CM OS Design MIL Temperature Range

TMS626812

Contextual Info: TM2SR72EPN 2097152 BY 72-BIT TM4SR72EPN 4194304 BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULES S M M S 698A -JU N E 1997-R E V IS E D FEBRUARY 1998 Organization - TM2SR72EPN . . . 2097152 x 72 Bits - TM4SR72EPN . . .4194304 x 72 Bits High-Speed, Low-Noise Low-Voltage TTL

Contextual Info: TM4EP72BPB, TM4EP72BJB, 4194304 BY 72-BIT TM4EP72CPB, TM4EP72CJB 4194304 BY 72-BIT EXTENDED-DATA-OUT BUFFERED DYNAMIC RAM MODULES S M M S 686A -A U G U S T 1997-R E V IS E D FEBRUARY 1998 • Organization . . . 4194304 x 72 Bits • Long Refresh Periods: - TM4EP72CxB: 64 ms 4096 Cycles

M5M44100

Abstract: MH4M36CJD-5 MH4M36CJD-6 MH4M36CJD-7 M5M44100CTP
Contextual Info: MITSUBISHI LSIs MH4M36CJD-5,-6,-7 FAST PAGE MODE 4194304-WORD BY 36-BIT DYNAMIC RAM PIN CONFIGURATION ( TOP VIEW ) DESCRIPTION The MH4M36CJD is an 4M word by 36-bit dynamic RAM module and consists of 8 industry standard 4M X 4 dynamic RAMs in TSOP and 4 industry

JEP-106

Abstract: JEP106 mitsubishi year code mitsubishi date code MH4V644AXJJ MH4V644AXJJ-5 MH4V644AXJJ-6 MH4V64AXJJ MH4V64AXJJ-5 MH4V64AXJJ-6
Contextual Info: MITSUBISHI LSIs Preliminary Some of contents are subject to change without notice. MH4V64/644AXJJ-5,-6,-5S,-6S FAST PAGE MODE 268435456-BIT 4194304-WORD BY 64-BIT DYNAMIC RAM DESCRIPTION ADDRESS This is family of 4194304 - word by 64 - bit dynamic RAM module. This consists of four industry standard 4Mx16 dynamic

Contextual Info: MITSUBISHI LSIs M5M44102AWJ, J,L,TP,RT-6,-7,-8,-10 STATIC COLUMN MODE 4 1 9 4 3 0 4 -B IT 4 1 9 4 3 0 4 -W 0 R D BY 1-BIT DYNAMIC RAM DESCRIPTION This is a fa m ily of 4194304-word by 1-bit dynam ic RAMS, fabricated w ith the high performance CMOS process, and

LCC-18

Contextual Info: SENSITRON SEMICONDUCTOR SHD248201 Technical Data Datasheet 4194, Rev. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ Surface Mount œ Hermetically Sealed œ Small Footprint œ Dynamic dv/dt Rating œ Alternative to TO-39 Package œ Avalanche Energy and dv/dt Rated

TASC 20-5

Abstract: M5M44265CJ M5M44265C-6
Contextual Info: MITSUBISHI LSIs MITSUBISHI LSIs M5M44265CJ,TP-5,-6,-7, M5M44265CJ,TP-5,-6,-7,-5S,-6S,-7S -5S,-6S,-7S EDO HYPER PAGE MODE 4194304-BIT (262144-WORD 16-BIT) DYNAMIC RAM EDO (HYPER PAGE MODE) 4194304-BIT (262144-WORD BY BY 16-BIT) DYNAMIC RAM DESCRIPTION This is a family of 262144-word by 16-bit dynamic RAMs with

HB56E436

Abstract: Hitachi DSA00166 Nippon capacitors
Contextual Info: HB56E836 Series, HB56E436 Series 8388608-word x 36-bit High Density Dynamic RAM Module 4194304-word × 36-bit High Density Dynamic RAM Module ADE-203-673 Z Preliminary Rev. 0.0 Oct. 18, 1996 Description The HB56E836 Series is a 8 M × 36 Dynamic RAM Module, mounted 16 pieces of 16-Mbit DRAM

Contextual Info: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH4S64BLG -7,-8,-10 268435456-BIT 4194304 - WORD BY 64-BIT SynchronousDRAM DESCRIPTION The MH4S64BLG is 4194304 - word by 64-bit Synchronous DRAM module. This consists of four