4216165L Search Results

Contextual Info: MOS INTEGRATED CIRCUIT ¿¿PD4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE D escription The ì ì PD42S16165L, 4216165Lare 1 048 576 w ords by 16 bits dynamic CMOS RAMs w ith optional hyper page

nec A2C

Contextual Info: MOS INTEGRATED CIRCUIT ju P D 4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The|iPD42S16165L, 4216165Lare 1 048 576 w ords by 16 bits dynamic CMOS RAMs w ith optional hyper page

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT jU P D 4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16M -B IT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE, Description The /JPD42S16165L, 4216165L are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional EDO.

UPD4216165LG5-A60-7JF

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD42S16165L, 4216165L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE, Description The µPD42S16165L, 4216165L are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.

TOFC

Abstract: 4216165L
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD42S16165L, 4216165L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The µ PD42S16165L, 4216165L are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional hyper

D42S16165

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT UPD42S16165L, 4216165L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE, Description The /xPD42S16165L, 4216165L are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ¿¿PD42S 16165L , 4 2 16 16 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE D e s c rip tio n The /iP D 42S 16165L, 4216165L are 1,048,576 words by 16 bits CMOS dynam ic RAMs with optional hyper page

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ju PD 4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORO BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE D escription The /iPD42S16165L, 4216165L are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional hyper page

K777

Contextual Info: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT ¿ P D 4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The //PD42S16165L, 4216165L are 1 048 576 w o rd s by 16 b its d y n a m ic CMOS R A M s w ith o p tio n a l h yp e r page

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT /¿PD42S16165L, 4216165L 3.3 V OPERATION 16M -B IT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE, Description The ¿¡PD42S16165L, 4216165L are 1,048,576 w ords by 16 bits CMOS dynam ic RAMs with optional EDO.

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD42S16165L, 4216165L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WOFD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The nPD42S16165L, 42 16165Lare 1 048 576 w o rd s by 16 b its d yn a m ic C MOS R A M s w ith o p tio n a l h yp e r page

Contextual Info: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT ju P D 4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE, D escription The ¿¿PD42S16165L, 4216165L are 1,048,576 words by 16 bits C M O S dynam ic RA M s with optional EDO.

PJ 1169

Contextual Info: USER’S MANUAL O f C Corporation 1 9 9 4 ,1 9 9 5 .1 9 9 6 NEC Document No. M10339EJ3V0UM00 3rd edition Date Published July 1996 P Printed in Japan Rambus Is a trademark of Rambus Inc. The Information In this document is subject to change without notice.

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT NEC mP D 4264165, 4265165 64 M BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The pPD4264165,4265165 are 4,194,304 words by 16 bits CMOS dynamic RAMs with optional hyper page mode.

Contextual Info: HOW TO USE DRAM 1994, 1992 1995, 1996 Document No. M10339EJ3V0UM00 3rd edition Date Published July 1996 P Printed in Japan NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and

707j

Abstract: XC002 D42S161
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ju P D 42S 16 16 5 , 4 2 16 16 5 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description T h e /¿PD 42S16165, 421 6 1 6 5 a re 1,048,576 w o rd s b y 16 b its C M O S dy n a m ic R A M s w ith o p tio nal ED O .

4265165G5

Abstract: Oil 00037
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT IMEC juPD4264165,4265165 64 M BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The pPD4264165,4265165 are 4,194,304 words by 16 bits CMOS dynamic RAMs with optional hyper page mode.

65G5

Abstract: NEC 4216165-60
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD42S 16165, 4216165 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description The /¿PD42S16165, 4216165 are 1,048,576 w ords by 16 bits CM OS dynam ic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.

GE4F

Abstract: UPD65013 74022a SMD BGA 672 DRAWING ULF-210R TRANSISTOR SMD MARKING CODE 352 UPD7514 UPC451G2 smd TRANSISTOR code YW UPD74HC00
Contextual Info: Information SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL Document No. C10535EJ9V0IF00 9th edition Date Published December 1997 N Printed in Japan 1989 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written

Contextual Info: NEC USER'S MANUAL HOW TO USE DRAM Document No. M10339EJ3V0UMQ0 {3rd édition Date Published July 1996 P NEC Corporation 1994, 1995, 1996 Printed in Japan 1103 R a m b u s is a trad em ark o f R a m b us Inc. T h e in fo rm a tio n in th is d o c u m e n t is s u b je c t to c h a n g e w ith o u t n otice.

42S16165

Abstract: ahW MARKING
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿ P D 4 2 S 1 6 1 6 5 , 4 2 1 6 1 6 5 1 6 M -B IT DYNAMIC RAM 1 M-WORO BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE Description The /iPD42S16165,4216165 are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional hyper page mode

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ju P D 4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE Description T h e /iP D 4 2 S 1 6 1 65L, 4 2 1 6165L a re 1 ,0 4 8 ,5 7 6 w o rd s b y 16 b its C M O S d y n a m ic R A M s w ith o p tio n a l h y p e r page

Contextual Info: Information 16M DRAM DATA COLLECTION 1M-word by 16-bit, Revision P Document No. M12824XJ1V0IF00 1st edition Date Published September 1997 N 1997 Printed in Japan [MEMO] 2 SUMMARY OF CONTENTS CHAPTER 1 DRAM PROCESS .

M9627

Abstract: uPC451g SMD 6PIN IC MARKING CODE PR-53365 NIHON SMD MARKING codes sealed relay ge mil 7451 UPD65013 smd code marking NEC g GE4F tanaka AL wire
Contextual Info: SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL 1989 Document No. C10535EJ8V0IF00 8th edition Date Published February 1997 N Printed in Japan No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in